JP5358956B2 - 載置台装置、処理装置、温度制御方法及び記憶媒体 - Google Patents

載置台装置、処理装置、温度制御方法及び記憶媒体 Download PDF

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JP5358956B2
JP5358956B2 JP2008009925A JP2008009925A JP5358956B2 JP 5358956 B2 JP5358956 B2 JP 5358956B2 JP 2008009925 A JP2008009925 A JP 2008009925A JP 2008009925 A JP2008009925 A JP 2008009925A JP 5358956 B2 JP5358956 B2 JP 5358956B2
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Japan
Prior art keywords
mounting table
temperature
power ratio
supply power
supply
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JP2008009925A
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English (en)
Japanese (ja)
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JP2009170822A5 (enExample
JP2009170822A (ja
Inventor
貴史 荻野
智仁 小松
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Priority to JP2008009925A priority Critical patent/JP5358956B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020127015727A priority patent/KR20120085915A/ko
Priority to KR1020107014192A priority patent/KR101374442B1/ko
Priority to PCT/JP2009/050058 priority patent/WO2009090899A1/ja
Priority to CN2009801015849A priority patent/CN101911252B/zh
Priority to TW98101551A priority patent/TWI469237B/zh
Publication of JP2009170822A publication Critical patent/JP2009170822A/ja
Publication of JP2009170822A5 publication Critical patent/JP2009170822A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2008009925A 2008-01-19 2008-01-19 載置台装置、処理装置、温度制御方法及び記憶媒体 Active JP5358956B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008009925A JP5358956B2 (ja) 2008-01-19 2008-01-19 載置台装置、処理装置、温度制御方法及び記憶媒体
KR1020107014192A KR101374442B1 (ko) 2008-01-19 2009-01-07 배치대 장치, 처리 장치, 온도 제어 방법 및 프로그램이 기억된 기억 매체
PCT/JP2009/050058 WO2009090899A1 (ja) 2008-01-19 2009-01-07 載置台装置、処理装置および温度制御方法
CN2009801015849A CN101911252B (zh) 2008-01-19 2009-01-07 载置台装置、处理装置以及温度控制方法
KR1020127015727A KR20120085915A (ko) 2008-01-19 2009-01-07 처리 장치 및 온도 제어 방법
TW98101551A TWI469237B (zh) 2008-01-19 2009-01-16 A mounting apparatus, a processing apparatus, and a temperature control method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008009925A JP5358956B2 (ja) 2008-01-19 2008-01-19 載置台装置、処理装置、温度制御方法及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2009170822A JP2009170822A (ja) 2009-07-30
JP2009170822A5 JP2009170822A5 (enExample) 2011-01-27
JP5358956B2 true JP5358956B2 (ja) 2013-12-04

Family

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JP2008009925A Active JP5358956B2 (ja) 2008-01-19 2008-01-19 載置台装置、処理装置、温度制御方法及び記憶媒体

Country Status (5)

Country Link
JP (1) JP5358956B2 (enExample)
KR (2) KR101374442B1 (enExample)
CN (1) CN101911252B (enExample)
TW (1) TWI469237B (enExample)
WO (1) WO2009090899A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5026549B2 (ja) * 2010-04-08 2012-09-12 シャープ株式会社 加熱制御システム、それを備えた成膜装置、および温度制御方法
CN103628046B (zh) * 2012-08-24 2015-11-11 中微半导体设备(上海)有限公司 一种调节基片表面温度的控温系统和控温方法
CN102851652A (zh) * 2012-09-28 2013-01-02 深圳市捷佳伟创新能源装备股份有限公司 一种用于mocvd设备的加热器
JP2014112594A (ja) * 2012-12-05 2014-06-19 Denso Corp スーパージャンクション構造を有する半導体装置の製造方法
CN104131268B (zh) * 2013-05-03 2017-02-08 北京北方微电子基地设备工艺研究中心有限责任公司 分区域加热方法、装置和半导体设备
DE102013109155A1 (de) * 2013-08-23 2015-02-26 Aixtron Se Substratbehandlungsvorrichtung
CN104233195B (zh) * 2014-08-28 2017-02-08 京东方科技集团股份有限公司 一种蒸镀设备及蒸镀方法
CN104716077A (zh) * 2015-03-25 2015-06-17 上海华力微电子有限公司 可控温加热式传送腔及其工艺装置和控温加热方法
JP6525751B2 (ja) * 2015-06-11 2019-06-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
JP6570894B2 (ja) 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法
JP6447393B2 (ja) 2015-07-06 2019-01-09 東京エレクトロン株式会社 成膜処理装置、成膜処理方法及び記憶媒体
JP6507953B2 (ja) 2015-09-08 2019-05-08 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN107022754B (zh) 2016-02-02 2020-06-02 东京毅力科创株式会社 基板处理装置
JP6740881B2 (ja) 2016-02-02 2020-08-19 東京エレクトロン株式会社 基板処理装置
US10345802B2 (en) * 2016-02-17 2019-07-09 Lam Research Corporation Common terminal heater for ceramic pedestals used in semiconductor fabrication
JP6688172B2 (ja) * 2016-06-24 2020-04-28 東京エレクトロン株式会社 基板処理システムおよび方法
CN109417024B (zh) * 2016-06-27 2023-07-28 东京毅力科创株式会社 基板处理装置、基板处理方法以及存储介质
CN108054087B (zh) * 2017-12-07 2020-05-29 德淮半导体有限公司 晶圆键合中的退火装置及退火方法
JP7018823B2 (ja) * 2018-05-29 2022-02-14 東京エレクトロン株式会社 モデル生成装置、モデル生成プログラムおよびモデル生成方法
JP7094804B2 (ja) * 2018-07-03 2022-07-04 東京エレクトロン株式会社 基板処理装置および基板処理方法
US12288672B2 (en) 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
JP7449799B2 (ja) * 2020-07-09 2024-03-14 東京エレクトロン株式会社 載置台の温度調整方法及び検査装置
KR102844318B1 (ko) * 2023-12-19 2025-08-08 주식회사 에스지에스코리아 멀티 존 히터의 제어 장치 및 제어 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001313260A (ja) * 2000-04-28 2001-11-09 Kyocera Corp 円盤状ヒータおよびウエハ処理装置
JP4009100B2 (ja) * 2000-12-28 2007-11-14 東京エレクトロン株式会社 基板加熱装置および基板加熱方法
JP2005243243A (ja) * 2004-02-24 2005-09-08 Ngk Insulators Ltd 加熱方法
JP2007335500A (ja) * 2006-06-13 2007-12-27 Hitachi Kokusai Electric Inc 基板処理装置の温度制御方法

Also Published As

Publication number Publication date
TW200941621A (en) 2009-10-01
CN101911252A (zh) 2010-12-08
CN101911252B (zh) 2012-05-23
JP2009170822A (ja) 2009-07-30
TWI469237B (zh) 2015-01-11
KR101374442B1 (ko) 2014-03-24
WO2009090899A1 (ja) 2009-07-23
KR20100113494A (ko) 2010-10-21
KR20120085915A (ko) 2012-08-01

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