KR101374442B1 - 배치대 장치, 처리 장치, 온도 제어 방법 및 프로그램이 기억된 기억 매체 - Google Patents

배치대 장치, 처리 장치, 온도 제어 방법 및 프로그램이 기억된 기억 매체 Download PDF

Info

Publication number
KR101374442B1
KR101374442B1 KR1020107014192A KR20107014192A KR101374442B1 KR 101374442 B1 KR101374442 B1 KR 101374442B1 KR 1020107014192 A KR1020107014192 A KR 1020107014192A KR 20107014192 A KR20107014192 A KR 20107014192A KR 101374442 B1 KR101374442 B1 KR 101374442B1
Authority
KR
South Korea
Prior art keywords
temperature
heating
ratio
supply
supply power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107014192A
Other languages
English (en)
Korean (ko)
Other versions
KR20100113494A (ko
Inventor
다카시 오기노
도모히토 고마츠
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20100113494A publication Critical patent/KR20100113494A/ko
Application granted granted Critical
Publication of KR101374442B1 publication Critical patent/KR101374442B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020107014192A 2008-01-19 2009-01-07 배치대 장치, 처리 장치, 온도 제어 방법 및 프로그램이 기억된 기억 매체 Active KR101374442B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-009925 2008-01-19
JP2008009925A JP5358956B2 (ja) 2008-01-19 2008-01-19 載置台装置、処理装置、温度制御方法及び記憶媒体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020127015727A Division KR20120085915A (ko) 2008-01-19 2009-01-07 처리 장치 및 온도 제어 방법

Publications (2)

Publication Number Publication Date
KR20100113494A KR20100113494A (ko) 2010-10-21
KR101374442B1 true KR101374442B1 (ko) 2014-03-24

Family

ID=40885290

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020107014192A Active KR101374442B1 (ko) 2008-01-19 2009-01-07 배치대 장치, 처리 장치, 온도 제어 방법 및 프로그램이 기억된 기억 매체
KR1020127015727A Ceased KR20120085915A (ko) 2008-01-19 2009-01-07 처리 장치 및 온도 제어 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020127015727A Ceased KR20120085915A (ko) 2008-01-19 2009-01-07 처리 장치 및 온도 제어 방법

Country Status (5)

Country Link
JP (1) JP5358956B2 (enExample)
KR (2) KR101374442B1 (enExample)
CN (1) CN101911252B (enExample)
TW (1) TWI469237B (enExample)
WO (1) WO2009090899A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5026549B2 (ja) * 2010-04-08 2012-09-12 シャープ株式会社 加熱制御システム、それを備えた成膜装置、および温度制御方法
CN103628046B (zh) * 2012-08-24 2015-11-11 中微半导体设备(上海)有限公司 一种调节基片表面温度的控温系统和控温方法
CN102851652A (zh) * 2012-09-28 2013-01-02 深圳市捷佳伟创新能源装备股份有限公司 一种用于mocvd设备的加热器
JP2014112594A (ja) * 2012-12-05 2014-06-19 Denso Corp スーパージャンクション構造を有する半導体装置の製造方法
CN104131268B (zh) * 2013-05-03 2017-02-08 北京北方微电子基地设备工艺研究中心有限责任公司 分区域加热方法、装置和半导体设备
DE102013109155A1 (de) * 2013-08-23 2015-02-26 Aixtron Se Substratbehandlungsvorrichtung
CN104233195B (zh) * 2014-08-28 2017-02-08 京东方科技集团股份有限公司 一种蒸镀设备及蒸镀方法
CN104716077A (zh) * 2015-03-25 2015-06-17 上海华力微电子有限公司 可控温加热式传送腔及其工艺装置和控温加热方法
JP6525751B2 (ja) * 2015-06-11 2019-06-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
JP6570894B2 (ja) 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法
JP6447393B2 (ja) 2015-07-06 2019-01-09 東京エレクトロン株式会社 成膜処理装置、成膜処理方法及び記憶媒体
JP6507953B2 (ja) 2015-09-08 2019-05-08 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN107022754B (zh) 2016-02-02 2020-06-02 东京毅力科创株式会社 基板处理装置
JP6740881B2 (ja) 2016-02-02 2020-08-19 東京エレクトロン株式会社 基板処理装置
US10345802B2 (en) * 2016-02-17 2019-07-09 Lam Research Corporation Common terminal heater for ceramic pedestals used in semiconductor fabrication
JP6688172B2 (ja) * 2016-06-24 2020-04-28 東京エレクトロン株式会社 基板処理システムおよび方法
CN109417024B (zh) * 2016-06-27 2023-07-28 东京毅力科创株式会社 基板处理装置、基板处理方法以及存储介质
CN108054087B (zh) * 2017-12-07 2020-05-29 德淮半导体有限公司 晶圆键合中的退火装置及退火方法
JP7018823B2 (ja) * 2018-05-29 2022-02-14 東京エレクトロン株式会社 モデル生成装置、モデル生成プログラムおよびモデル生成方法
JP7094804B2 (ja) * 2018-07-03 2022-07-04 東京エレクトロン株式会社 基板処理装置および基板処理方法
US12288672B2 (en) 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
JP7449799B2 (ja) * 2020-07-09 2024-03-14 東京エレクトロン株式会社 載置台の温度調整方法及び検査装置
KR102844318B1 (ko) * 2023-12-19 2025-08-08 주식회사 에스지에스코리아 멀티 존 히터의 제어 장치 및 제어 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243243A (ja) 2004-02-24 2005-09-08 Ngk Insulators Ltd 加熱方法
JP2007335500A (ja) 2006-06-13 2007-12-27 Hitachi Kokusai Electric Inc 基板処理装置の温度制御方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001313260A (ja) * 2000-04-28 2001-11-09 Kyocera Corp 円盤状ヒータおよびウエハ処理装置
JP4009100B2 (ja) * 2000-12-28 2007-11-14 東京エレクトロン株式会社 基板加熱装置および基板加熱方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243243A (ja) 2004-02-24 2005-09-08 Ngk Insulators Ltd 加熱方法
JP2007335500A (ja) 2006-06-13 2007-12-27 Hitachi Kokusai Electric Inc 基板処理装置の温度制御方法

Also Published As

Publication number Publication date
JP5358956B2 (ja) 2013-12-04
TW200941621A (en) 2009-10-01
CN101911252A (zh) 2010-12-08
CN101911252B (zh) 2012-05-23
JP2009170822A (ja) 2009-07-30
TWI469237B (zh) 2015-01-11
WO2009090899A1 (ja) 2009-07-23
KR20100113494A (ko) 2010-10-21
KR20120085915A (ko) 2012-08-01

Similar Documents

Publication Publication Date Title
KR101374442B1 (ko) 배치대 장치, 처리 장치, 온도 제어 방법 및 프로그램이 기억된 기억 매체
US5775889A (en) Heat treatment process for preventing slips in semiconductor wafers
JP5135915B2 (ja) 載置台構造及び熱処理装置
JP5029435B2 (ja) 載置台構造及び熱処理装置
TWI791020B (zh) 用以消除在晶圓背側邊緣及凹口處之沉積的晶圓邊緣接觸硬體及方法
US11395373B2 (en) Wafer holder with tapered region
US7432475B2 (en) Vertical heat treatment device and method controlling the same
TWI658529B (zh) 提高溫度均勻性之基座加熱器局部溫度控制
KR20100110822A (ko) 열처리 장치 및 그 제어 방법
WO2009116472A1 (ja) 載置台構造及び熱処理装置
JP6912497B2 (ja) 基板処理装置、天井ヒータおよび半導体装置の製造方法
TWI466216B (zh) 基板處理裝置，半導體裝置之製造方法及頂板斷熱體
KR20160033160A (ko) 보다 균일한 층 두께를 위한 기판 지지 링
JPH10107018A (ja) 半導体ウェーハの熱処理装置
US7070661B2 (en) Uniform gas cushion wafer support
JP4853432B2 (ja) 載置台構造及び処理装置
US6407368B1 (en) System for maintaining a flat zone temperature profile in LP vertical furnace
CN1177830A (zh) 半导体晶片热处理设备
JPH10150029A (ja) 半導体製造装置
US20240222160A1 (en) Ceiling heater, substrate processing method, method of manufacturing semiconductor device and substrate processing apparatus
KR101126098B1 (ko) 배치식 기판처리 장치
KR100548995B1 (ko) 반도체 소자 제조용 종형 확산로의 웨이퍼 지지 장치
JP6449074B2 (ja) 基板処理装置及び基板処理方法
WO1997046842A1 (fr) Dispositif de traitement thermique vertical

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20100625

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20101208

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20111117

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20120518

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20111117

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

A107 Divisional application of patent
AMND Amendment
J201 Request for trial against refusal decision
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20120618

PJ0201 Trial against decision of rejection

Patent event date: 20120618

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20120518

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20131120

Appeal identifier: 2012101005847

Request date: 20120618

PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20120618

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20120618

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20120113

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20101208

Patent event code: PB09011R02I

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

Comment text: Report of Result of Re-examination before a Trial

Patent event code: PB06011S01D

Patent event date: 20120810

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20131120

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20120618

Decision date: 20131120

Appeal identifier: 2012101005847

PS0901 Examination by remand of revocation
S901 Examination by remand of revocation
GRNO Decision to grant (after opposition)
PS0701 Decision of registration after remand of revocation

Patent event date: 20131209

Patent event code: PS07012S01D

Comment text: Decision to Grant Registration

Patent event date: 20131120

Patent event code: PS07011S01I

Comment text: Notice of Trial Decision (Remand of Revocation)

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20140307

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20140307

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20170221

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20170221

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20180219

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20180219

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20190218

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20190218

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20200218

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20200218

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20210218

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20220216

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20230220

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20240219

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20250204

Start annual number: 12

End annual number: 12