CN101911252B - 载置台装置、处理装置以及温度控制方法 - Google Patents

载置台装置、处理装置以及温度控制方法 Download PDF

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Publication number
CN101911252B
CN101911252B CN2009801015849A CN200980101584A CN101911252B CN 101911252 B CN101911252 B CN 101911252B CN 2009801015849 A CN2009801015849 A CN 2009801015849A CN 200980101584 A CN200980101584 A CN 200980101584A CN 101911252 B CN101911252 B CN 101911252B
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temperature
heating
heater
mounting table
innermost
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Chinese (zh)
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CN101911252A (zh
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荻野贵史
小松智仁
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN2009801015849A 2008-01-19 2009-01-07 载置台装置、处理装置以及温度控制方法 Active CN101911252B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008009925A JP5358956B2 (ja) 2008-01-19 2008-01-19 載置台装置、処理装置、温度制御方法及び記憶媒体
JP2008-009925 2008-01-19
PCT/JP2009/050058 WO2009090899A1 (ja) 2008-01-19 2009-01-07 載置台装置、処理装置および温度制御方法

Publications (2)

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CN101911252A CN101911252A (zh) 2010-12-08
CN101911252B true CN101911252B (zh) 2012-05-23

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CN2009801015849A Active CN101911252B (zh) 2008-01-19 2009-01-07 载置台装置、处理装置以及温度控制方法

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JP (1) JP5358956B2 (enExample)
KR (2) KR101374442B1 (enExample)
CN (1) CN101911252B (enExample)
TW (1) TWI469237B (enExample)
WO (1) WO2009090899A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5026549B2 (ja) * 2010-04-08 2012-09-12 シャープ株式会社 加熱制御システム、それを備えた成膜装置、および温度制御方法
CN103628046B (zh) * 2012-08-24 2015-11-11 中微半导体设备(上海)有限公司 一种调节基片表面温度的控温系统和控温方法
CN102851652A (zh) * 2012-09-28 2013-01-02 深圳市捷佳伟创新能源装备股份有限公司 一种用于mocvd设备的加热器
JP2014112594A (ja) * 2012-12-05 2014-06-19 Denso Corp スーパージャンクション構造を有する半導体装置の製造方法
CN104131268B (zh) * 2013-05-03 2017-02-08 北京北方微电子基地设备工艺研究中心有限责任公司 分区域加热方法、装置和半导体设备
DE102013109155A1 (de) * 2013-08-23 2015-02-26 Aixtron Se Substratbehandlungsvorrichtung
CN104233195B (zh) * 2014-08-28 2017-02-08 京东方科技集团股份有限公司 一种蒸镀设备及蒸镀方法
CN104716077A (zh) * 2015-03-25 2015-06-17 上海华力微电子有限公司 可控温加热式传送腔及其工艺装置和控温加热方法
JP6525751B2 (ja) * 2015-06-11 2019-06-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
JP6570894B2 (ja) 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法
JP6447393B2 (ja) 2015-07-06 2019-01-09 東京エレクトロン株式会社 成膜処理装置、成膜処理方法及び記憶媒体
JP6507953B2 (ja) 2015-09-08 2019-05-08 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN107022754B (zh) 2016-02-02 2020-06-02 东京毅力科创株式会社 基板处理装置
JP6740881B2 (ja) 2016-02-02 2020-08-19 東京エレクトロン株式会社 基板処理装置
US10345802B2 (en) * 2016-02-17 2019-07-09 Lam Research Corporation Common terminal heater for ceramic pedestals used in semiconductor fabrication
JP6688172B2 (ja) * 2016-06-24 2020-04-28 東京エレクトロン株式会社 基板処理システムおよび方法
CN109417024B (zh) * 2016-06-27 2023-07-28 东京毅力科创株式会社 基板处理装置、基板处理方法以及存储介质
CN108054087B (zh) * 2017-12-07 2020-05-29 德淮半导体有限公司 晶圆键合中的退火装置及退火方法
JP7018823B2 (ja) * 2018-05-29 2022-02-14 東京エレクトロン株式会社 モデル生成装置、モデル生成プログラムおよびモデル生成方法
JP7094804B2 (ja) * 2018-07-03 2022-07-04 東京エレクトロン株式会社 基板処理装置および基板処理方法
US12288672B2 (en) 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
JP7449799B2 (ja) * 2020-07-09 2024-03-14 東京エレクトロン株式会社 載置台の温度調整方法及び検査装置
KR102844318B1 (ko) * 2023-12-19 2025-08-08 주식회사 에스지에스코리아 멀티 존 히터의 제어 장치 및 제어 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243243A (ja) * 2004-02-24 2005-09-08 Ngk Insulators Ltd 加熱方法
JP2007335500A (ja) * 2006-06-13 2007-12-27 Hitachi Kokusai Electric Inc 基板処理装置の温度制御方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001313260A (ja) * 2000-04-28 2001-11-09 Kyocera Corp 円盤状ヒータおよびウエハ処理装置
JP4009100B2 (ja) * 2000-12-28 2007-11-14 東京エレクトロン株式会社 基板加熱装置および基板加熱方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243243A (ja) * 2004-02-24 2005-09-08 Ngk Insulators Ltd 加熱方法
JP2007335500A (ja) * 2006-06-13 2007-12-27 Hitachi Kokusai Electric Inc 基板処理装置の温度制御方法

Also Published As

Publication number Publication date
JP5358956B2 (ja) 2013-12-04
TW200941621A (en) 2009-10-01
CN101911252A (zh) 2010-12-08
JP2009170822A (ja) 2009-07-30
TWI469237B (zh) 2015-01-11
KR101374442B1 (ko) 2014-03-24
WO2009090899A1 (ja) 2009-07-23
KR20100113494A (ko) 2010-10-21
KR20120085915A (ko) 2012-08-01

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