CN103628046B - 一种调节基片表面温度的控温系统和控温方法 - Google Patents
一种调节基片表面温度的控温系统和控温方法 Download PDFInfo
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CN201210305989.8A CN103628046B (zh) | 2012-08-24 | 2012-08-24 | 一种调节基片表面温度的控温系统和控温方法 |
TW102130323A TW201413046A (zh) | 2012-08-24 | 2013-08-23 | 一種調節基片表面溫度的控溫系統和控溫方法 |
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CN201210305989.8A CN103628046B (zh) | 2012-08-24 | 2012-08-24 | 一种调节基片表面温度的控温系统和控温方法 |
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CN103628046A CN103628046A (zh) | 2014-03-12 |
CN103628046B true CN103628046B (zh) | 2015-11-11 |
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Families Citing this family (6)
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CN103074617A (zh) * | 2012-12-26 | 2013-05-01 | 光达光电设备科技(嘉兴)有限公司 | 控制系统及其控制方法 |
DE102014117388A1 (de) * | 2014-11-27 | 2016-06-02 | Aixtron Se | Verfahren zum Kalibrieren einer Pyrometeranordnung eines CVD- oder PVD-Reaktors |
DE102015100640A1 (de) * | 2015-01-19 | 2016-07-21 | Aixtron Se | Vorrichtung und Verfahren zum thermischen Behandeln von Substraten |
ITUB20160556A1 (it) * | 2016-02-08 | 2017-08-08 | L P E S P A | Suscettore con perno riscaldato e reattore per deposizione epitassiale |
CN107805797B (zh) * | 2016-09-09 | 2019-08-16 | 中微半导体设备(上海)股份有限公司 | 一种过温保护装置及方法 |
CN107761077B (zh) * | 2017-10-20 | 2019-12-03 | 京东方科技集团股份有限公司 | 一种镀膜方法、装置以及pecvd设备 |
Citations (3)
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CN101911252A (zh) * | 2008-01-19 | 2010-12-08 | 东京毅力科创株式会社 | 载置台装置、处理装置以及温度控制方法 |
CN201817546U (zh) * | 2010-10-28 | 2011-05-04 | 理想能源设备(上海)有限公司 | 衬底支撑基座和应用该衬底支撑基座的化学气相沉积设备 |
CN102102196A (zh) * | 2009-12-16 | 2011-06-22 | 丽佳达普株式会社 | 化学气相沉积装置的温度控制方法 |
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US5834068A (en) * | 1996-07-12 | 1998-11-10 | Applied Materials, Inc. | Wafer surface temperature control for deposition of thin films |
US6156382A (en) * | 1997-05-16 | 2000-12-05 | Applied Materials, Inc. | Chemical vapor deposition process for depositing tungsten |
IL135550A0 (en) * | 2000-04-09 | 2001-05-20 | Acktar Ltd | Method and apparatus for temperature controlled vapor deposition on a substrate |
US7993057B2 (en) * | 2007-12-20 | 2011-08-09 | Asm America, Inc. | Redundant temperature sensor for semiconductor processing chambers |
US9034142B2 (en) * | 2009-12-18 | 2015-05-19 | Novellus Systems, Inc. | Temperature controlled showerhead for high temperature operations |
TW201122149A (en) * | 2009-12-31 | 2011-07-01 | Univ Nat Chiao Tung | Reactor, chemical vapor deposition reactor, and metal organic chemical vapor deposition reactor |
TWM424335U (en) * | 2010-03-29 | 2012-03-11 | Stion Corp | Large scale mocvd system for thin film photovoltaic device |
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CN101911252A (zh) * | 2008-01-19 | 2010-12-08 | 东京毅力科创株式会社 | 载置台装置、处理装置以及温度控制方法 |
CN102102196A (zh) * | 2009-12-16 | 2011-06-22 | 丽佳达普株式会社 | 化学气相沉积装置的温度控制方法 |
CN201817546U (zh) * | 2010-10-28 | 2011-05-04 | 理想能源设备(上海)有限公司 | 衬底支撑基座和应用该衬底支撑基座的化学气相沉积设备 |
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Publication number | Publication date |
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TW201413046A (zh) | 2014-04-01 |
TWI496940B (zh) | 2015-08-21 |
CN103628046A (zh) | 2014-03-12 |
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Application publication date: 20140312 Assignee: Nanchang Medium and Micro Semiconductor Equipment Co., Ltd. Assignor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Contract record no.: 2018990000345 Denomination of invention: Temperature control system and temperature control method for adjusting substrate surface temperature Granted publication date: 20151111 License type: Exclusive License Record date: 20181217 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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