TWI469237B - A mounting apparatus, a processing apparatus, and a temperature control method - Google Patents
A mounting apparatus, a processing apparatus, and a temperature control method Download PDFInfo
- Publication number
- TWI469237B TWI469237B TW98101551A TW98101551A TWI469237B TW I469237 B TWI469237 B TW I469237B TW 98101551 A TW98101551 A TW 98101551A TW 98101551 A TW98101551 A TW 98101551A TW I469237 B TWI469237 B TW I469237B
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- mounting table
- supply
- electric power
- ratio
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 76
- 238000012545 processing Methods 0.000 title claims description 72
- 238000010438 heat treatment Methods 0.000 claims description 105
- 230000008569 process Effects 0.000 claims description 60
- 230000007246 mechanism Effects 0.000 claims description 15
- 229910010293 ceramic material Inorganic materials 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 37
- 239000007789 gas Substances 0.000 description 31
- 239000004065 semiconductor Substances 0.000 description 17
- 238000009826 distribution Methods 0.000 description 14
- 230000008859 change Effects 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002407 reforming Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008009925A JP5358956B2 (ja) | 2008-01-19 | 2008-01-19 | 載置台装置、処理装置、温度制御方法及び記憶媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200941621A TW200941621A (en) | 2009-10-01 |
| TWI469237B true TWI469237B (zh) | 2015-01-11 |
Family
ID=40885290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW98101551A TWI469237B (zh) | 2008-01-19 | 2009-01-16 | A mounting apparatus, a processing apparatus, and a temperature control method |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5358956B2 (enExample) |
| KR (2) | KR101374442B1 (enExample) |
| CN (1) | CN101911252B (enExample) |
| TW (1) | TWI469237B (enExample) |
| WO (1) | WO2009090899A1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5026549B2 (ja) * | 2010-04-08 | 2012-09-12 | シャープ株式会社 | 加熱制御システム、それを備えた成膜装置、および温度制御方法 |
| CN103628046B (zh) * | 2012-08-24 | 2015-11-11 | 中微半导体设备(上海)有限公司 | 一种调节基片表面温度的控温系统和控温方法 |
| CN102851652A (zh) * | 2012-09-28 | 2013-01-02 | 深圳市捷佳伟创新能源装备股份有限公司 | 一种用于mocvd设备的加热器 |
| JP2014112594A (ja) * | 2012-12-05 | 2014-06-19 | Denso Corp | スーパージャンクション構造を有する半導体装置の製造方法 |
| CN104131268B (zh) * | 2013-05-03 | 2017-02-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 分区域加热方法、装置和半导体设备 |
| DE102013109155A1 (de) * | 2013-08-23 | 2015-02-26 | Aixtron Se | Substratbehandlungsvorrichtung |
| CN104233195B (zh) * | 2014-08-28 | 2017-02-08 | 京东方科技集团股份有限公司 | 一种蒸镀设备及蒸镀方法 |
| CN104716077A (zh) * | 2015-03-25 | 2015-06-17 | 上海华力微电子有限公司 | 可控温加热式传送腔及其工艺装置和控温加热方法 |
| JP6525751B2 (ja) * | 2015-06-11 | 2019-06-05 | 東京エレクトロン株式会社 | 温度制御方法及びプラズマ処理装置 |
| JP6570894B2 (ja) | 2015-06-24 | 2019-09-04 | 東京エレクトロン株式会社 | 温度制御方法 |
| JP6447393B2 (ja) | 2015-07-06 | 2019-01-09 | 東京エレクトロン株式会社 | 成膜処理装置、成膜処理方法及び記憶媒体 |
| JP6507953B2 (ja) | 2015-09-08 | 2019-05-08 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| CN107022754B (zh) | 2016-02-02 | 2020-06-02 | 东京毅力科创株式会社 | 基板处理装置 |
| JP6740881B2 (ja) | 2016-02-02 | 2020-08-19 | 東京エレクトロン株式会社 | 基板処理装置 |
| US10345802B2 (en) * | 2016-02-17 | 2019-07-09 | Lam Research Corporation | Common terminal heater for ceramic pedestals used in semiconductor fabrication |
| JP6688172B2 (ja) * | 2016-06-24 | 2020-04-28 | 東京エレクトロン株式会社 | 基板処理システムおよび方法 |
| CN109417024B (zh) * | 2016-06-27 | 2023-07-28 | 东京毅力科创株式会社 | 基板处理装置、基板处理方法以及存储介质 |
| CN108054087B (zh) * | 2017-12-07 | 2020-05-29 | 德淮半导体有限公司 | 晶圆键合中的退火装置及退火方法 |
| JP7018823B2 (ja) * | 2018-05-29 | 2022-02-14 | 東京エレクトロン株式会社 | モデル生成装置、モデル生成プログラムおよびモデル生成方法 |
| JP7094804B2 (ja) * | 2018-07-03 | 2022-07-04 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| US12288672B2 (en) | 2020-01-15 | 2025-04-29 | Applied Materials, Inc. | Methods and apparatus for carbon compound film deposition |
| JP7449799B2 (ja) * | 2020-07-09 | 2024-03-14 | 東京エレクトロン株式会社 | 載置台の温度調整方法及び検査装置 |
| KR102844318B1 (ko) * | 2023-12-19 | 2025-08-08 | 주식회사 에스지에스코리아 | 멀티 존 히터의 제어 장치 및 제어 방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040149227A1 (en) * | 2000-12-28 | 2004-08-05 | Tetsuya Saito | Substrate heating device and method of purging the device |
| JP2007335500A (ja) * | 2006-06-13 | 2007-12-27 | Hitachi Kokusai Electric Inc | 基板処理装置の温度制御方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001313260A (ja) * | 2000-04-28 | 2001-11-09 | Kyocera Corp | 円盤状ヒータおよびウエハ処理装置 |
| JP2005243243A (ja) * | 2004-02-24 | 2005-09-08 | Ngk Insulators Ltd | 加熱方法 |
-
2008
- 2008-01-19 JP JP2008009925A patent/JP5358956B2/ja active Active
-
2009
- 2009-01-07 CN CN2009801015849A patent/CN101911252B/zh active Active
- 2009-01-07 KR KR1020107014192A patent/KR101374442B1/ko active Active
- 2009-01-07 KR KR1020127015727A patent/KR20120085915A/ko not_active Ceased
- 2009-01-07 WO PCT/JP2009/050058 patent/WO2009090899A1/ja not_active Ceased
- 2009-01-16 TW TW98101551A patent/TWI469237B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040149227A1 (en) * | 2000-12-28 | 2004-08-05 | Tetsuya Saito | Substrate heating device and method of purging the device |
| JP2007335500A (ja) * | 2006-06-13 | 2007-12-27 | Hitachi Kokusai Electric Inc | 基板処理装置の温度制御方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5358956B2 (ja) | 2013-12-04 |
| TW200941621A (en) | 2009-10-01 |
| CN101911252A (zh) | 2010-12-08 |
| CN101911252B (zh) | 2012-05-23 |
| JP2009170822A (ja) | 2009-07-30 |
| KR101374442B1 (ko) | 2014-03-24 |
| WO2009090899A1 (ja) | 2009-07-23 |
| KR20100113494A (ko) | 2010-10-21 |
| KR20120085915A (ko) | 2012-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |