JP2005217335A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP2005217335A JP2005217335A JP2004025040A JP2004025040A JP2005217335A JP 2005217335 A JP2005217335 A JP 2005217335A JP 2004025040 A JP2004025040 A JP 2004025040A JP 2004025040 A JP2004025040 A JP 2004025040A JP 2005217335 A JP2005217335 A JP 2005217335A
- Authority
- JP
- Japan
- Prior art keywords
- cooling gas
- space
- gas introduction
- introduction duct
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 239000000112 cooling gas Substances 0.000 claims abstract description 74
- 238000010438 heat treatment Methods 0.000 claims abstract description 68
- 238000006243 chemical reaction Methods 0.000 abstract description 28
- 238000002791 soaking Methods 0.000 abstract description 17
- 239000012212 insulator Substances 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 29
- 239000011810 insulating material Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 14
- 239000012495 reaction gas Substances 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000007664 blowing Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910018404 Al2 O3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- -1 annealing treatment Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Abstract
炉口部での非加熱域をなくして、炉口部での温度低下を抑制し、反応管4内での均熱領域を長くして製品ウェーハの品質の均一性の向上、歩留りの向上を図る。
【解決手段】
基板5を処理する処理室と、該処理室の周りに設けられ前記基板を加熱する加熱手段2とを具備し、該加熱手段が発熱部7と該発熱部との間に空間15を形成する外側断熱部42を有し、前記発熱部の下部を囲繞する冷却ガス導入ダクト36を前記空間、前記外側断熱部の下端に設け、前記冷却ガス導入ダクトより前記空間に冷却ガスが導入される様構成した。
【選択図】 図1
Description
尚、本発明は以下の実施の態様を含む。
2 加熱装置
3 均熱管
4 反応管
5 ウェーハ
6 ボート
7 発熱部
11 ヒータケース
15 空間
16 冷却ガス導入ダクト
20 導通口
36 冷却ガス導入ダクト
44 成形ブロック
45 内層断熱体
46 ガス吹出し孔
57 マニホールドリング
58 下部断熱部材
59 導通孔
Claims (1)
- 基板を処理する処理室と、該処理室の周りに設けられ前記基板を加熱する加熱手段とを具備し、該加熱手段が発熱部と該発熱部との間に空間を形成する外側断熱部を有し、前記発熱部の下部を囲繞する冷却ガス導入ダクトを前記空間、前記外側断熱部の下端に設け、前記冷却ガス導入ダクトより前記空間に冷却ガスが導入される様構成したことを特徴とする基板処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004025040A JP4104070B2 (ja) | 2004-02-02 | 2004-02-02 | 基板処理装置及び半導体装置の製造方法及び加熱装置及び断熱材 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004025040A JP4104070B2 (ja) | 2004-02-02 | 2004-02-02 | 基板処理装置及び半導体装置の製造方法及び加熱装置及び断熱材 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006302826A Division JP4669465B2 (ja) | 2006-11-08 | 2006-11-08 | 基板処理装置及び半導体装置の製造方法及び加熱装置及び断熱材 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005217335A true JP2005217335A (ja) | 2005-08-11 |
JP2005217335A5 JP2005217335A5 (ja) | 2006-12-21 |
JP4104070B2 JP4104070B2 (ja) | 2008-06-18 |
Family
ID=34907530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004025040A Expired - Lifetime JP4104070B2 (ja) | 2004-02-02 | 2004-02-02 | 基板処理装置及び半導体装置の製造方法及び加熱装置及び断熱材 |
Country Status (1)
Country | Link |
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JP (1) | JP4104070B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008198477A (ja) * | 2007-02-13 | 2008-08-28 | Foi:Kk | プラズマ発生装置およびプラズマ発生装置の冷却方法 |
US8253075B2 (en) | 2006-02-20 | 2012-08-28 | Tokyo Electron Limited | Heat treatment apparatus, heater, and method for manufacturing the heater |
JP2012256897A (ja) * | 2012-07-12 | 2012-12-27 | Hitachi Kokusai Electric Inc | 断熱構造体、加熱装置、加熱システム、基板処理装置および半導体装置の製造方法 |
KR101290943B1 (ko) * | 2010-07-09 | 2013-07-29 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 가열 장치 |
JP2014209569A (ja) * | 2013-03-25 | 2014-11-06 | 株式会社日立国際電気 | 断熱構造体及び半導体装置の製造方法 |
-
2004
- 2004-02-02 JP JP2004025040A patent/JP4104070B2/ja not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8253075B2 (en) | 2006-02-20 | 2012-08-28 | Tokyo Electron Limited | Heat treatment apparatus, heater, and method for manufacturing the heater |
JP2008198477A (ja) * | 2007-02-13 | 2008-08-28 | Foi:Kk | プラズマ発生装置およびプラズマ発生装置の冷却方法 |
KR101290943B1 (ko) * | 2010-07-09 | 2013-07-29 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 가열 장치 |
US9460946B2 (en) | 2010-07-09 | 2016-10-04 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and heating equipment |
JP2012256897A (ja) * | 2012-07-12 | 2012-12-27 | Hitachi Kokusai Electric Inc | 断熱構造体、加熱装置、加熱システム、基板処理装置および半導体装置の製造方法 |
JP2014209569A (ja) * | 2013-03-25 | 2014-11-06 | 株式会社日立国際電気 | 断熱構造体及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4104070B2 (ja) | 2008-06-18 |
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