JP5314233B2 - 制御された導電率を有する半導体材料および半導体デバイスの製造方法 - Google Patents

制御された導電率を有する半導体材料および半導体デバイスの製造方法 Download PDF

Info

Publication number
JP5314233B2
JP5314233B2 JP2001567026A JP2001567026A JP5314233B2 JP 5314233 B2 JP5314233 B2 JP 5314233B2 JP 2001567026 A JP2001567026 A JP 2001567026A JP 2001567026 A JP2001567026 A JP 2001567026A JP 5314233 B2 JP5314233 B2 JP 5314233B2
Authority
JP
Japan
Prior art keywords
semiconductor material
barrier layer
reactor
gas
passivation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001567026A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004528700A (ja
JP2004528700A5 (https=
Inventor
カポルネク デイビッド
シビュールト ブライアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/644,875 external-priority patent/US6498111B1/en
Application filed by Cree Inc filed Critical Cree Inc
Publication of JP2004528700A publication Critical patent/JP2004528700A/ja
Publication of JP2004528700A5 publication Critical patent/JP2004528700A5/ja
Application granted granted Critical
Publication of JP5314233B2 publication Critical patent/JP5314233B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/408—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of Group III-V semiconductors, e.g. to render them semi-insulating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
JP2001567026A 2000-03-14 2001-03-13 制御された導電率を有する半導体材料および半導体デバイスの製造方法 Expired - Lifetime JP5314233B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US18963000P 2000-03-14 2000-03-14
US60/189,630 2000-03-14
US09/644,875 US6498111B1 (en) 2000-08-23 2000-08-23 Fabrication of semiconductor materials and devices with controlled electrical conductivity
US09/644,875 2000-08-23
PCT/US2001/007976 WO2001069659A2 (en) 2000-03-14 2001-03-13 Fabrication of semiconductor materials and devices with controlled electrical conductivity

Publications (3)

Publication Number Publication Date
JP2004528700A JP2004528700A (ja) 2004-09-16
JP2004528700A5 JP2004528700A5 (https=) 2005-01-20
JP5314233B2 true JP5314233B2 (ja) 2013-10-16

Family

ID=26885351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001567026A Expired - Lifetime JP5314233B2 (ja) 2000-03-14 2001-03-13 制御された導電率を有する半導体材料および半導体デバイスの製造方法

Country Status (9)

Country Link
EP (1) EP1269520A2 (https=)
JP (1) JP5314233B2 (https=)
KR (1) KR100923937B1 (https=)
CN (1) CN100559619C (https=)
AU (1) AU2001243606A1 (https=)
CA (1) CA2402662C (https=)
MY (1) MY126104A (https=)
TW (1) TWI238541B (https=)
WO (1) WO2001069659A2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1022021C2 (nl) * 2002-11-28 2004-06-02 Univ Eindhoven Tech Werkwijze ter vorming van vacatures in een III-V-halfgeleider, een op GaN gebaseerde structuur, en de toepassing hiervan.
KR101008285B1 (ko) 2005-10-28 2011-01-13 주식회사 에피밸리 3족 질화물 반도체 발광소자
KR100742988B1 (ko) * 2005-11-25 2007-07-26 (주)더리즈 ｐ형 질화갈륨계 디바이스 제조방법
JP2009130316A (ja) * 2007-11-28 2009-06-11 Panasonic Corp 窒化物半導体装置およびその製造方法
KR100941877B1 (ko) * 2008-04-25 2010-02-11 김화민 패시배이션 조성물과 이를 이용한 스퍼터링 타겟과패시배이션막 및 그 제조방법
FR3026558B1 (fr) * 2014-09-26 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede d'activation de dopants dans une couche semi-conductrice a base de gan
CN104377547B (zh) * 2014-11-19 2017-07-21 北京工业大学 一种GaN基HEMT和LD单片集成的直接调制半导体激光器结构及其生长过程
TWI548000B (zh) * 2014-12-22 2016-09-01 力晶科技股份有限公司 半導體元件及其製作方法
CN109285774B (zh) * 2018-09-12 2023-03-24 江苏能华微电子科技发展有限公司 一种基于氮化镓的结势垒肖特基二极管及其形成方法
CN115606010B (zh) 2020-06-11 2025-07-15 苏州晶湛半导体有限公司 半导体结构及其制作方法
JPWO2025203491A1 (https=) * 2024-03-28 2025-10-02

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0653550A (ja) * 1992-07-31 1994-02-25 Toshiba Corp 多波長光半導体整列素子
JP3244980B2 (ja) * 1995-01-06 2002-01-07 株式会社東芝 半導体素子の製造方法
JP3325713B2 (ja) * 1994-08-22 2002-09-17 ローム株式会社 半導体発光素子の製法
JP2872096B2 (ja) * 1996-01-19 1999-03-17 日本電気株式会社 低抵抗ｐ型窒化ガリウム系化合物半導体の気相成長方法
JP3361964B2 (ja) * 1996-09-10 2003-01-07 株式会社東芝 半導体発光素子およびその製造方法
US5930656A (en) * 1996-10-21 1999-07-27 Kabushiki Kaisha Toshiba Method of fabricating a compound semiconductor device
JP3326371B2 (ja) * 1996-10-21 2002-09-24 東芝電子エンジニアリング株式会社 化合物半導体装置の製造方法
JP3463524B2 (ja) * 1997-08-04 2003-11-05 松下電器産業株式会社 窒化ガリウム系化合物半導体薄膜の製造方法
US5926726A (en) * 1997-09-12 1999-07-20 Sdl, Inc. In-situ acceptor activation in group III-v nitride compound semiconductors
JP3509514B2 (ja) * 1997-11-13 2004-03-22 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法
JP3653384B2 (ja) * 1998-02-10 2005-05-25 シャープ株式会社 発光ダイオードの製造方法
JP2000058462A (ja) * 1998-08-13 2000-02-25 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体の製造方法
JP3987985B2 (ja) * 1999-04-30 2007-10-10 サンケン電気株式会社 半導体装置の製造方法
JP3833848B2 (ja) * 1999-05-10 2006-10-18 パイオニア株式会社 ３族窒化物半導体素子製造方法
JP4162385B2 (ja) * 2000-03-02 2008-10-08 株式会社リコー ｐ型ＩＩＩ族窒化物半導体の製造方法

Also Published As

Publication number Publication date
KR100923937B1 (ko) 2009-10-29
CN1443373A (zh) 2003-09-17
MY126104A (en) 2006-09-29
TWI238541B (en) 2005-08-21
WO2001069659A3 (en) 2002-02-21
JP2004528700A (ja) 2004-09-16
CA2402662C (en) 2012-06-12
AU2001243606A1 (en) 2001-09-24
WO2001069659A2 (en) 2001-09-20
KR20020079955A (ko) 2002-10-19
EP1269520A2 (en) 2003-01-02
CN100559619C (zh) 2009-11-11
CA2402662A1 (en) 2001-09-20

Similar Documents

Publication Publication Date Title
US6620709B2 (en) Fabrication of semiconductor materials and devices with controlled electrical conductivity
US5926726A (en) In-situ acceptor activation in group III-v nitride compound semiconductors
JP4757441B2 (ja) 通常の低温核生成層なしでのミスマッチした基板上におけるｉｉｉ族窒化物フィルムの成長
KR100504161B1 (ko) Ⅲ족 질화물계 화합물 반도체 소자의 제조 방법
TWI651767B (zh) 形成應力鬆弛緩衝層的方法
US20110244663A1 (en) Forming a compound-nitride structure that includes a nucleation layer
US5902393A (en) Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy
US20110081771A1 (en) Multichamber split processes for led manufacturing
EP0497350A1 (en) Crystal growth method for gallium nitride-based compound semiconductor
TW201106502A (en) Cluster tool for LEDs
JP5314233B2 (ja) 制御された導電率を有する半導体材料および半導体デバイスの製造方法
US5930656A (en) Method of fabricating a compound semiconductor device
CN114093753B (zh) 氮化铝单晶衬底的表面处理方法及紫外发光二极管的制备方法
CN113053731B (zh) 镓金属薄膜的制作方法以及氮化镓衬底的保护方法
JP3326371B2 (ja) 化合物半導体装置の製造方法
JP2812375B2 (ja) 窒化ガリウム系化合物半導体の成長方法
JP7735584B2 (ja) 窒化ガリウムを堆積するためのヘテロエピタキシャルウエハ
KR20210107098A (ko) 증발 및 열화가 감소된 반도체 필름의 처리 방법
JP3592922B2 (ja) 化合物半導体基板
CN121586508A (zh) 键合结构及键合方法
JP3376849B2 (ja) 半導体薄膜の製造方法
CN1372304A (zh) 使用等离子体降低p型掺杂薄膜阻值的活化方法
Feingold et al. Rapid thermal low-pressure metal-organic chemical vapor deposition (RT-LPMOCVD) of semiconductor, dielectric and metal film onto InP and related materials

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040723

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070626

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20070626

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100823

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100907

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20101015

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101019

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101207

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110414

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110815

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110826

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20110901

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20111007

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120419

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120424

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120521

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120524

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121005

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121011

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121105

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121108

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121205

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121210

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130107

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130529

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130705

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5314233

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term