WO2001069659A3 - Fabrication of semiconductor materials and devices with controlled electrical conductivity - Google Patents

Fabrication of semiconductor materials and devices with controlled electrical conductivity Download PDF

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Publication number
WO2001069659A3
WO2001069659A3 PCT/US2001/007976 US0107976W WO0169659A3 WO 2001069659 A3 WO2001069659 A3 WO 2001069659A3 US 0107976 W US0107976 W US 0107976W WO 0169659 A3 WO0169659 A3 WO 0169659A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor material
reactor
barrier layer
fabrication
devices
Prior art date
Application number
PCT/US2001/007976
Other languages
French (fr)
Other versions
WO2001069659A2 (en
Inventor
David Kapolnek
Brian Thibeault
Original Assignee
Cree Lighting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/644,875 external-priority patent/US6498111B1/en
Application filed by Cree Lighting Co filed Critical Cree Lighting Co
Priority to CA2402662A priority Critical patent/CA2402662C/en
Priority to EP01916604A priority patent/EP1269520A2/en
Priority to AU2001243606A priority patent/AU2001243606A1/en
Priority to JP2001567026A priority patent/JP5314233B2/en
Publication of WO2001069659A2 publication Critical patent/WO2001069659A2/en
Publication of WO2001069659A3 publication Critical patent/WO2001069659A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3228—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of AIIIBV compounds, e.g. to make them semi-insulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)

Abstract

A method for protecting the surface of a semiconductor material (30, 50) from damage and dopant passivation is described. A barrier layer (32, 52) of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor (10) such as a MOCVD reactor, using the MOCVD source gasses. The barrier layer (32, 52) blocks the diffusion of hydrogen into the material. The reactor (10) can then be cooled in a reactive or non-reactive gas ambience. The semiconductor material can then be removed from the reactor (10) with little or no passivation of the dopant species. The barrier layer (32, 52) can be removed using a variety of etching processes, including wet chemical etching or can be left at the semiconductor material for surface protection. The barrier layer (32, 52) can also be a gettering layer that chemically binds hydrogen trapped in the semiconductor material and/or blocks hydrogen diffusion into the material.
PCT/US2001/007976 2000-03-14 2001-03-13 Fabrication of semiconductor materials and devices with controlled electrical conductivity WO2001069659A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CA2402662A CA2402662C (en) 2000-03-14 2001-03-13 Fabrication of semiconductor materials and devices with controlled electrical conductivity
EP01916604A EP1269520A2 (en) 2000-03-14 2001-03-13 Fabrication of semiconductor materials and devices with controlled electrical conductivity
AU2001243606A AU2001243606A1 (en) 2000-03-14 2001-03-13 Fabrication of semiconductor materials and devices with controlled electrical conductivity
JP2001567026A JP5314233B2 (en) 2000-03-14 2001-03-13 Semiconductor material having controlled conductivity and method for manufacturing semiconductor device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US18963000P 2000-03-14 2000-03-14
US60/189,630 2000-03-14
US09/644,875 US6498111B1 (en) 2000-08-23 2000-08-23 Fabrication of semiconductor materials and devices with controlled electrical conductivity
US09/644,875 2000-08-23

Publications (2)

Publication Number Publication Date
WO2001069659A2 WO2001069659A2 (en) 2001-09-20
WO2001069659A3 true WO2001069659A3 (en) 2002-02-21

Family

ID=26885351

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/007976 WO2001069659A2 (en) 2000-03-14 2001-03-13 Fabrication of semiconductor materials and devices with controlled electrical conductivity

Country Status (9)

Country Link
EP (1) EP1269520A2 (en)
JP (1) JP5314233B2 (en)
KR (1) KR100923937B1 (en)
CN (1) CN100559619C (en)
AU (1) AU2001243606A1 (en)
CA (1) CA2402662C (en)
MY (1) MY126104A (en)
TW (1) TWI238541B (en)
WO (1) WO2001069659A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1022021C2 (en) * 2002-11-28 2004-06-02 Univ Eindhoven Tech Formation of vacancies in semiconductor, useful for LEDs or laser diodes, by depositing dielectric layer on gallium arsenide structure, heating and removing this layer
KR101008285B1 (en) 2005-10-28 2011-01-13 주식회사 에피밸리 ?-nitride semiconductor light emitting device
KR100742988B1 (en) * 2005-11-25 2007-07-26 (주)더리즈 A manufacturing method for p type GaN device
JP2009130316A (en) * 2007-11-28 2009-06-11 Panasonic Corp Nitride semiconductor device and method of manufacturing the same
KR100941877B1 (en) * 2008-04-25 2010-02-11 김화민 Composition of passivation and sputtering target and passivation membrane and manufacturing method of it
FR3026558B1 (en) * 2014-09-26 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR ACTIVATING DOPANTS IN A SEMICONDUCTOR LAYER BASED ON GAN
CN104377547B (en) * 2014-11-19 2017-07-21 北京工业大学 A kind of single chip integrated directly modulated laser structures of GaN base HEMT and LD and its growth course
TWI548000B (en) * 2014-12-22 2016-09-01 力晶科技股份有限公司 Semiconductor device and method of manufacturing thereof
CN109285774B (en) * 2018-09-12 2023-03-24 江苏能华微电子科技发展有限公司 Junction barrier Schottky diode based on gallium nitride and forming method thereof
US20230006091A1 (en) * 2020-06-11 2023-01-05 Enkris Semiconductor, Inc. Semiconductor structures and methods of manufacturing the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999013499A2 (en) * 1997-09-12 1999-03-18 Sdl, Inc. In-situ acceptor activation in group iii-v nitride compound semiconductors
US5902393A (en) * 1996-01-19 1999-05-11 Nec Corporation Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy
JPH11145518A (en) * 1997-11-13 1999-05-28 Toyoda Gosei Co Ltd Manufacture of gallium nitride compound semiconductor
US5930656A (en) * 1996-10-21 1999-07-27 Kabushiki Kaisha Toshiba Method of fabricating a compound semiconductor device
EP1052705A1 (en) * 1999-05-10 2000-11-15 Pioneer Corporation Method for fabricating a group III Nitride semiconductor device

Family Cites Families (9)

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JPH0653550A (en) * 1992-07-31 1994-02-25 Toshiba Corp Multiwavelength semiconductor element array
JP3244980B2 (en) * 1995-01-06 2002-01-07 株式会社東芝 Method for manufacturing semiconductor device
JP3325713B2 (en) * 1994-08-22 2002-09-17 ローム株式会社 Manufacturing method of semiconductor light emitting device
JP3361964B2 (en) * 1996-09-10 2003-01-07 株式会社東芝 Semiconductor light emitting device and method of manufacturing the same
JP3326371B2 (en) * 1996-10-21 2002-09-24 東芝電子エンジニアリング株式会社 Method for manufacturing compound semiconductor device
JP3463524B2 (en) * 1997-08-04 2003-11-05 松下電器産業株式会社 Method of manufacturing gallium nitride based compound semiconductor thin film
JP2000058462A (en) * 1998-08-13 2000-02-25 Sony Corp Manufacture of nitride based iii-v compound semiconductor
JP3987985B2 (en) * 1999-04-30 2007-10-10 サンケン電気株式会社 Manufacturing method of semiconductor device
JP4162385B2 (en) * 2000-03-02 2008-10-08 株式会社リコー Method for producing p-type group III nitride semiconductor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5902393A (en) * 1996-01-19 1999-05-11 Nec Corporation Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy
US5930656A (en) * 1996-10-21 1999-07-27 Kabushiki Kaisha Toshiba Method of fabricating a compound semiconductor device
WO1999013499A2 (en) * 1997-09-12 1999-03-18 Sdl, Inc. In-situ acceptor activation in group iii-v nitride compound semiconductors
JPH11145518A (en) * 1997-11-13 1999-05-28 Toyoda Gosei Co Ltd Manufacture of gallium nitride compound semiconductor
EP1052705A1 (en) * 1999-05-10 2000-11-15 Pioneer Corporation Method for fabricating a group III Nitride semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 10 31 August 1999 (1999-08-31) *

Also Published As

Publication number Publication date
CN100559619C (en) 2009-11-11
CA2402662C (en) 2012-06-12
KR100923937B1 (en) 2009-10-29
JP5314233B2 (en) 2013-10-16
CA2402662A1 (en) 2001-09-20
KR20020079955A (en) 2002-10-19
MY126104A (en) 2006-09-29
CN1443373A (en) 2003-09-17
AU2001243606A1 (en) 2001-09-24
WO2001069659A2 (en) 2001-09-20
EP1269520A2 (en) 2003-01-02
JP2004528700A (en) 2004-09-16
TWI238541B (en) 2005-08-21

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