JP3463524B2 - Method of manufacturing gallium nitride based compound semiconductor thin film - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] BACKGROUND OF THE INVENTION 1. Field of the InventionIsGallium-based compounds
The present invention relates to a method for manufacturing a semiconductor thin film. [0002] 2. Description of the Related Art Gallium nitride-based compound semiconductors use visible light.
Semiconductor materials for light-emitting devices and high-temperature operating electronic devices
It is attracting attention. In these devices,
Generally, a structure in which semiconductor thin films are stacked is used. Here, a gallium nitride-based compound semiconductor thin film
Metalorganic vapor phase epitaxy is a well-known method for growing
Have been. In this method, I.sub.
Organometallic compound gas (tri-
Methyl gallium (hereinafter referred to as "TMG"), trime
Chilled aluminum (hereinafter referred to as “TMA”),
Methyl indium (hereinafter referred to as "TMI") and the like
And ammonia and hydrazine as source gases for Group V elements
And the like, and the substrate temperature is set to about 900 ° C. to 1100 ° C.
Gallium nitride-based compound semiconductor on substrate held at high temperature
This is a method of growing a thin film. This method allows gall nitride
Gallium nitride-based compound semiconductors
Since there is no compound semiconductor substrate, it is relatively
Different types of sapphire and silicon carbide (SiC) with similar molecular constants
A material is used as the substrate. However, sapphire and SiC substrates are not
Lattice irregularities exist between lithium-based compound semiconductors.
Gallium nitride-based compound on these substrates at high temperature
Gallium nitride-based compound semiconductors
It grows in islands and a flat surface cannot be obtained. As means for solving this, Japanese Patent Laid-Open No. 2-2
29476 and JP-A-6-151962.
As disclosed, gallium nitride based compound semiconductors
Low temperature amorphous nitride on the substrate before growth
Luminium (AlN) and aluminum gallium nitride (A
1GaN) is grown, and the buffer layer
Gallium nitride based compound semiconductor grown on
There is a method. Then, using this method, gallium nitride
Light-emitting device having a structure in which thin film of compound semiconductor thin film is laminated
Has been produced. [0006] However, at low temperatures,
By the conventional method using a buffer layer to be grown,
Gallium nitride based compound semiconductor grown on buffer layer
Since the thin film still contains many defects, etc.
The characteristics of the light-emitting device manufactured using it are not sufficient, and high efficiency
Gallium nitride based compound semiconductor
Further improvement in crystallinity of a body thin film is desired. [0007] Here, the above-mentioned conventional technique is not suitable for high temperature nitriding.
Before growing gallium arsenide compound semiconductor thin films
This is a method using a buffer layer to be grown. like this
In the method, the material of the buffer layer grown exclusively at low temperature
Gallium nitride grown at high temperature
By optimizing the growth conditions of
Gallium nitride based compound grown on the buffer layer
Attempts to improve the quality of oxide semiconductor thin films
Gallium nitride near the interface with the buffer layer
Of thin film quality focusing on the structure of base compound semiconductor thin film itself
There is no special respect for good. [0008] [0009]BookThe invention is based on gallium nitride based
An object of the present invention is to provide a method for producing a compound semiconductor thin film.
You. [0010] [MEANS FOR SOLVING THE PROBLEMS]
The gallium nitride based compound semiconductor light emitting device of the present inventionMade
Construction methodIsGallium nitride based metal organic chemical vapor deposition
A method for producing a compound semiconductor thin film, comprising preparing a substrate,
A buffer layer containing indium is grown on this substrate,
Gallium nitride based compound containing indium on buffer layer
Gallium nitride based materials
In forming a compound semiconductor thin film, the gallium nitride-based
Growth direction from the side of the compound semiconductor thin film in contact with the buffer layer
Indium so that the concentration of indium decreases
IncludeThings. [0011] [0012] [0013] DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention
IsGallium nitride based compounds using metal organic chemical vapor deposition
A method for manufacturing a semiconductor thin film, comprising preparing a substrate,
A buffer layer containing indium is grown on the plate and
Gallium nitride based semiconductor containing indium
Gallium nitride-based compound
In forming a conductive thin film, the gallium nitride-based compound
From the side in contact with the buffer layer of the semiconductor thin film in the growth direction
Contains indium to reduce the concentration of indium
What to makeIs the result of the gallium nitride based compound semiconductor thin film.
Improved crystallization and excellent luminescence properties
It has the action of:Also, the buffer layer and this buffer
Gallium nitride-based compound semiconductor thin film grown on the layer
The lattice constant difference becomes smaller near the interface, causing distortion and crystal defects.
Etc. is reduced and the crystallinity is improved.
Have. [0014] [0015] [0016] [0017] [0018] Hereinafter, an embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG. (Embodiment 1) FIG. 1 is used in Embodiment 1 of the present invention.
FIG. 1 is a schematic sectional view showing a main part of a metal organic chemical vapor deposition apparatus to be used.
Yes, the structure of the reaction section and the gas system leading to the reaction section
It is shown. In FIG. 1, a gas inlet 11a is provided at one end.
Is a reaction tube 11 having a gas outlet 11b opened at the other end.
Hold the thin film growth surface of the substrate 12 downward.
A substrate holder 13 is provided. Outside the reaction tube 11
A heating element 14 is provided near the substrate holder 13.
The substrate holder 13 and the substrate 12 are
Is heated. The gas inlet 11a has a key inside the reaction tube 11.
Gas piping for introducing carrier gas and raw material gas
It is connected. The gas piping is connected to the main carrier gas, nitrogen.
First pipe 17 through which raw gas and hydrogen gas respectively flow
a from the second pipe 17b and the second pipe 17b.
TMG, TMA, TMI and biscyclopenta
Dienyl magnesium (hereinafter referred to as “Cp_TwoMg "
U. ) Is a hydrogen gas for taking in each
The third pipe 17c and the fourth pipe through which the rear gas flows respectively.
Pipe 17d, fifth pipe 17e and sixth pipe 17f
And a seventh pipe 17g through which ammonia flows, and a monosila
(Hereinafter referred to as “SiH_Four" Eighth pipe through which flows
17h. These pipes 17a-1
7h, there are flow controllers 15a-1 which control the gas flow.
5h are installed respectively. Also, the third pipe 17
The cylinder 18c in which TMG is stored is located on the fourth cylinder c.
Cylinder 18d containing TMA on pipe 17d
However, a syringe containing TMI is provided on the fifth pipe 17e.
The second pipe 18e has Cp on the sixth pipe 17f._TwoMg is contained
Each of the cylinders 18f is provided. Soshi
The first to eighth pipes 17 a to 17 h are directed to the reaction tube 11.
Once they are merged with each other, one gas
A pipe is connected to the gas inlet 11a. In such a metal organic chemical vapor deposition apparatus,
The organometallic compound gas, which is a feed gas, is supplied to the flow controller 15.
Hydrogen gas whose flow rate is controlled by c, 15d, 15e
The carrier gas consisting of TMG, TMA, T
MI is introduced into cylinders 18c to 18e,
It is vaporized and taken out by the bling.
These organometallic compound gases are supplied to the flow controller 1
With ammonia whose flow rate was controlled by 5 g,
Nitrogen whose flow rate is controlled by the quantity controllers 15a and 15b
Main carrier gas consisting of a mixture of gas and hydrogen gas
Thus, it is efficiently supplied to the reaction tube 11. The raw material gas in the reaction tube 11
After the ammonia and the organometallic compound gas react,
Gallium nitride-based compound semiconductor thin film
Is done. The rest of the source gas is exhaust gas 16
Is discharged. Here, doping of p-type or n-type impurities
For growing grown gallium nitride based compound semiconductor thin films
In this case, the water whose flow rate is controlled by the flow rate
Bubbling with carrier gas
Retrieved Cp_TwoMg gas or flow controller 15
SiH whose flow rate is controlled by h_FourGas, the organic
Flow simultaneously with metal compound gas. Note that Cp_TwoMg gas
Since it contains p-type impurity Mg, p-type gallium nitride
In growing a compound semiconductor thin film, SiH_Four
Since the gas contains Si, which is an n-type impurity, n-type nitrogen
Used for growing gallium arsenide compound semiconductor thin films
Can be Next, film formation using a metal organic chemical vapor deposition apparatus
Step will be described. First, a mirror-finished surface
A fire substrate 12 is prepared. Next, clean this well
Then, it is set on the substrate holder 13 in the reaction tube 11. Soshi
While flowing hydrogen gas from the second pipe 17b.
2 is maintained at 1100 ° C. for 10 minutes,
Dirt such as organic matter adhering to the surface by heating
And cleaning to remove moisture. Thereafter, the substrate surface temperature is lowered to 600 ° C.
In this state, nitrogen gas is used as the main carrier gas for 1 hour.
0 liters / minute, ammonia at 5 liters / minute,
Carrier gas for TMA containing TMA and T containing TMI
While flowing MI carrier gas at the same time,
From Al1-xInxN (0 <x <1) containing
A buffer layer having a thickness of, for example, 25 nm.
You. Al1-xInxN (0 <x <1) corresponds to AlN and I
It is in a mixed crystal state of nN (indium nitride).
In the embodiment, the solid phase molar ratio x of InN is 0.7.
At this rate, the carrier gas for TMA and the carrier gas for TMI
A sample was prepared by adjusting and flowing the rear gas. Specifically
Has a carrier gas of 6 cc / min for TMA and a carrier gas for TMI.
Carrier gas was flowed at 140 cc / min. Next, the carrier gas of TMA and TMI
And after raising the substrate surface temperature to 1050 ° C,
8 liters / min of nitrogen gas as main carrier gas, hydrogen
2 liters / min gas, for TMG containing new TMG
Grown for 3 minutes while flowing a carrier gas of 4 cc / min.
Gallium nitride compound semiconductor thin film on the buffer layer
Grow. Next, the TMG gas as the source gas is stopped,
Flow nitrogen gas at 10 L / min as main carrier gas
While maintaining the substrate surface temperature at 1050 ° C for 5 minutes,
Gallium nitride based In grown in the pha layer
Diffusion into the compound semiconductor thin film. Here, In is diffused.
Gallium nitride based compound semiconductor thin film growth
To reduce the growth rate at the initial stage
After growing the compound semiconductor thin film,
Above the temperature when growing gallium nitride based compound semiconductor thin film
It is also possible to use an ascending method. In addition, segregation and
Movement of mass transport etc.
To supply In to gallium nitride based compound semiconductor thin film
It may be. Next, the substrate surface temperature was kept at 1050 ° C.
In the state, nitrogen gas as a main carrier gas was 8 liter /
Min, hydrogen gas at 2 liters / min and TMG containing TMG
While flowing carrier gas at 4 cc / min.
Gallium nitride based compound semiconductor thin film is grown. This
Gallium nitride compound semiconductor on the buffer layer
A thin film is grown to a thickness of 2 μm. After the growth, a carrier gas for TMG and ammonia
Stop nearing, and flow nitrogen gas and hydrogen gas at the same flow rate.
After cooling to room temperature, the wafer is
Take it out. The wafer is a thin film on the substrate 12 as described above.
Indicates a film formed. Here, the present inventor has obtained
In addition to the wafer of the present embodiment,
A sample was obtained by the following process. That is, the buffer layer as described above is grown.
In the process of carrying, TMA and TMI
20c only TMA carrier gas instead of Agus
In the same manner except for flowing at c / min, the InN solid phase molar ratio x
0.0, buffer made of AlN not containing In
Grow the layer. Next, TMA and TMI carriers
The gas was stopped and the substrate surface temperature was raised to 1050 ° C.
After that, nitrogen gas as a main carrier gas is 8 liter / min.
2 L / min of hydrogen gas and TM containing new TMG
60 minutes while flowing carrier gas for G at 4 cc / min
Gallium nitride based semiconductor on the buffer layer
A body thin film is grown to a thickness of 2 μm. After growth, for TMG
Stop carrier gas and ammonia, and remove nitrogen gas and hydrogen gas.
After cooling to room temperature while flowing the gas at the same flow rate,
The wafer was taken out of the reaction tube 11 and was taken out in Comparative Example 1.
It is assumed that. Next, a film was formed by the above manufacturing method.
The gallium nitride based compound semiconductor thin film was evaluated. Evaluation
X-ray rocking curve by two-crystal X-ray diffractometer
Measurement and secondary ion mass spectroscopy (hereinafter “SIMS”)
U. )Analysis was carried out. The X-ray rocking curve is half that
The smaller the value range, the more the gallium nitride-based compound semiconductor
It shows that the crystallinity is good. An AlN buffer layer containing no In was used.
In the sample of Comparative Example 1, the X-ray rocking curve half value
The width is about 9 minutes.
X-ray rocking curve half width of the embodiment is about 5 minutes
A large difference was recognized as compared with Here, as shown in FIG.
Gallium nitride grown on In-containing buffer layer
4 shows a SIMS depth profile of a compound semiconductor thin film.
As can be seen from FIG. 2, a buffer layer containing In was used.
In the wafer, In contained in the buffer layer is formed thereon.
Diffused into the elongated gallium nitride-based compound semiconductor layer,
The concentration decreases in the growth direction. On the other hand, AlN buffer
In the sample of Comparative Example 1 using the layer, although not shown,
Buffer layer and gallium nitride based compound grown on it
It turns out that the semiconductor forms a relatively steep interface
Was. In the present invention, the buffer layer containing In is used.
In this case, a conventional buffer layer containing no In was used.
Gallium nitride based compound grown on it
The reasons why the crystallinity of semiconductor thin films is improved are as follows.
Can be inferred. (1) When a buffer layer containing In is used,
In this case, InN having a lower hardness than AlN is included.
Therefore, AlN or AlGaN was used as the buffer layer.
Gallium nitride-based compound on the buffer layer
When growing body thin films at high temperatures,
Due to the lattice constant difference with the compound semiconductor thin film layer,
Can easily absorb the distortion that occurs in
It is considered that there is an effect of reducing crystal defects. (2) When a buffer layer containing In is used,
By diffusing In contained in the buffer layer,
Of gallium nitride-based compound semiconductor thin film grown at high temperature
In can be contained in a part of the far layer side. Gas nitride
In contained in the lithium-based compound semiconductor thin film is a buffer layer
The concentration is high near the interface with
Buffer layer and gallium nitride based compound semiconductor thin film
Element difference can be reduced, and the
This can reduce the occurrence of distortion and crystal defects. rear
As described in the second embodiment, the supply of raw materials during growth
When In is contained in gallium gallium compound semiconductor thin film
Also, when a buffer layer containing In is used, I
Since the diffusion of n can be suppressed, the boundary with the buffer layer
Of gallium nitride-based compound semiconductor thin film near the surface
Concentration can be maintained stably with good controllability.
You. (3) Gallium nitride based compound containing In
Conductor is made of gallium nitride based compound semiconductor not containing In
Is also soft, so that the effect of the buffer layer (1) described above and
(2) Synergy and effect of reducing lattice constant difference with buffer layer
The strain in the gallium nitride-based compound semiconductor thin film
And the occurrence of crystal defects can be reduced. In the above description, the buffer layer is
Gallium nitride based compound semiconductor thin films without impurity doping
Has been described for growing gallium nitride.
Doping compound semiconductor thin film with p-type or n-type impurities
The same effect can be obtained also in the case where it is performed. (Embodiment 2) In Embodiment 2
Also, the metal organic chemical vapor deposition apparatus described in Embodiment 1
Used. Then, the manufacturing method according to the first embodiment described above
A buffer layer made of AlInN is grown in the same manner as described above.
After stopping the carrier gas of TMA and TMI,
After increasing the surface temperature to 850 ° C, the main carrier gas
10 liters / min of nitrogen gas, newly containing TMG
The carrier gas for TMG and the carrier gas for TMI
Growing for 3 minutes while flowing
A compound semiconductor thin film with a thickness of 0.1 μm
You. During growth, the flow rate of the carrier gas for TMG was increased to 2 cc /
Flow rate of carrier gas for TMI from min to 4cc / min
Linear from 120cc / min to 0.1cc / min
Gallium nitride based compound semiconductor
The concentration of In is reduced in the growth direction of the thin film. Next, a carrier gas for TMG and a carrier gas for TMI
Stop the carrier gas of, and reduce the substrate surface temperature to 1050 ° C
After raising, 8 l of nitrogen gas as main carrier gas
Torr / min, hydrogen gas 2 liter / min, new TMG
While flowing a carrier gas for TMG containing 4 cc / min.
Grow for 57 minutes. Thus, on the buffer layer
Gallium nitride-based compound semiconductor thin film with a thickness of 2 μm
Lengthen. And ammonia, nitrogen gas and hydrogen gas
After cooling to room temperature while flowing at the same flow rate,
Remove the har from the reaction tube. In the present embodiment obtained as described above,
X-ray rocking car of gallium nitride based compound semiconductor thin film
The measured half-width was about 5 minutes.
It was found that the crystallinity was good as in the case of Embodiment 1. The gallium nitride compound of the present embodiment
SIMS analysis of semiconductor thin films
As in the case of the sample of Embodiment 1, the nitride gas grown on the buffer layer
The concentration of In contained in the
It gradually decreases in the growth direction from the side in contact with the
I found out. Therefore, in this embodiment, too,
Gallium nitride-based compound semiconductor grown on a buffer layer
The crystallinity of the thin film is greatly improved. In the present embodiment, the buffer
Gallium nitride based compound semiconductor thin film grown on
When In is contained in a part of the buffer layer side, TMI and T
The flow rate of MG was changed linearly,
Gallium nitride based compound semiconductor thin film
The concentration of In may be reduced stepwise in the growth direction. (Embodiment 3) FIG. 3 shows an embodiment of the present invention.
Structure of gallium nitride based compound semiconductor light emitting device according to embodiment 3
FIG. In FIG. 3, a buffer layer is provided on a substrate 1.
2, n-type gallium nitride based compound semiconductor thin film 3, ANDO
InGaN layer 4, p-type gallium nitride compound semiconductor thin film
The films 5 are sequentially stacked. In addition, p-type gallium nitride
A p-side electrode 6 is partially exposed on the compound semiconductor thin film 5.
N-type gallium nitride-based compound semiconductor thin film 3
Electrodes 7 are respectively formed. Such a nitride gas
In a lithium-based compound semiconductor light emitting device, the substrate 1
Preferably, the substrate 1 is made of sapphire.
The buffer layer 2 formed thereon is made of Al1-xI containing In.
nxN (0 <x <1), which is composed of AlN and InN
Consisting of a mixed crystal of Here, undoped means that the p-type
Impurities and n-type impurities are not added.
Thus, the undoped InGaN layer 4 becomes a light emitting layer. Gallium nitride based compound in the present embodiment
The method for manufacturing the semiconductor light emitting device is as follows. The same manufacturing method as in the first embodiment as described above.
Al1-xInxN containing In by the method (0 <x <1)
A buffer layer 2 consisting of TMA and T
Stop the carrier gas for MI, and reduce the substrate surface temperature to 1050
℃, then use nitrogen gas as the main carrier gas
At 8 liters / minute and hydrogen gas at 2 liters / minute.
Then, a new carrier gas for TMG was added at 4 cc / min.
10 ppm SiH as i source_FourGas at 10cc / min
Gallium nitride based compound semiconductor thin film for 3 minutes
Lengthen. Next, a carrier gas for TMG and SiH_Four
Stop the gas and add 10 liters of nitrogen gas as the main carrier gas.
The substrate surface temperature was raised to 1050 ° C for 5 minutes while flowing at Torr / min.
Gas nitride grown with In contained in the buffer layer.
It is diffused into a lithium-based compound semiconductor thin film. Substrate surface temperature
While maintaining the temperature at 1050 ° C.,
8 liters / minute of nitrogen gas and 2 liters / hour of hydrogen gas
And the carrier gas for TMG containing TMG at 4 cc /
Min, SiH_FourGully nitride while flowing gas at 10 cc / min
A compound semiconductor thin film is grown. Like this
N-type gallium nitride doped with Si on the buffer layer
A compound semiconductor thin film is grown to a thickness of 2 μm. The n-type gallium nitride compound semiconductor thin film 3 is
After the growth, a carrier gas for TMG and SiH_Fourgas
And reduce the substrate surface temperature to 750 ° C,
10 liter / min of nitrogen gas as main carrier gas
The carrier gas for TMG is 2 cc / min and the carrier gas for TMI is
Grow for 1 minute while flowing the rear gas at 100 cc / min.
Undoped InGaN layer 4 is grown to a thickness of 3 nm.
Let After growing the InGaN layer 4,
Stop carrier gas for TMI and carrier gas for TMI
Raise the surface temperature to 1050 ° C and add a new main carrier.
8 liters / min of nitrogen gas and hydrogen gas as gas
1.95 liters / minute and TMG containing TMG
4cc / min of rear gas, Cp_TwoCarrier gas for Mg
Grow for 15 minutes while flowing at 50 cc / min.
0.5 μm of doped gallium nitride-based compound semiconductor thin film
grow to a thickness of m. After growth, carrier gas for TMG
And Cp_TwoStop carrier gas and ammonia for Mg
While flowing nitrogen gas and hydrogen gas at the same flow rate.
After cooling to room temperature, the wafer is removed from the reaction tube. The n-type gallium nitride thus formed
-Based compound semiconductor thin film 3, undoped InGaN layer 4, and p
From the stacked structure with the gallium nitride-based compound semiconductor thin film 5
Pn junction including a quantum well structure
One of the lithium-based compound semiconductor thin film 5 and the InGaN layer 4
Etching the part to remove the n-type gallium nitride compound semiconductor thin film
A part of the film 3 is exposed, and a p-type gallium nitride-based compound semiconductor
Body thin film 5 and n-type gallium nitride-based compound semiconductor thin film 3
Each layer has a p-side electrode 6 as an ohmic electrode and an n-side electrode
An electrode 7 is formed. Thereafter, the back surface of the sapphire substrate 1 is polished.
To a thickness of about 100 μm and scribe
Separate in the shape of a loop. With this chip facing up the pn junction formation surface
After bonding to the stem, the n-side electrode 7 of the chip and
Each p-side electrode 6 is connected to an electrode on the stem by a wire, and
Thereafter, resin molding is performed to produce a light emitting diode. The present inventor has set this light emitting diode to 20 mA.
, The forward voltage was 3.9.
V, emission output: 890 μW, spectrum half width: 14 n
m and emitted blue-violet light at a wavelength of 430 nm. Here, the present inventor has obtained
In addition to the light emitting diode of the present embodiment,
Then, a sample was obtained by the following process. That is, in the same manner as in Comparative Example 1 described above,
A buffer layer 2 made of AlN not containing In is grown.
Next, the carrier gas for TMA is stopped and the substrate surface temperature is stopped.
After the temperature is raised to 1050 ° C, it is used as the main carrier gas.
8 liters / minute of nitrogen gas and 2 liters of hydrogen gas
/ Min while supplying a new carrier gas for TMG.
cc / min, 10 ppm SiH as Si source_Four1 gas
Growing for 60 minutes while flowing at 0 cc / min, buffer layer
N-type gallium nitride compound semiconductor doped with Si
A thin film 3 is grown to a thickness of 2 μm. Hereafter, the form of this implementation
LED in the same way as described in
This was used as Comparative Example 2. The light emitting diode of Comparative Example 2 was set to 20 mA
When driven with the forward current of
Almost the same as the sample obtained by the process described in Embodiment 3.
It was the same, but the emission output was as low as 150 μW, about 1/6.
As a result, the half width of the spectrum was increased to 31 nm. In the above embodiment, In
Al1-xInxN (0 <x <
1) was used, but InyGa1-yN (0 <y ≦ 1) or
AlaInbGa1-a-bN (0 ≦ a ≦ 1, 0 <b ≦
1, a + b ≦ 1) can achieve the same effect.
Is clear. [0063] As described above, the present inventionIs the organometallic vapor phase
Of gallium nitride-based compound semiconductor thin film using GaN growth method
Providing a substrate and forming indium on the substrate.
Grow a buffer layer containing
Gallium nitride based compound semiconductor thin film containing
To form gallium nitride-based compound semiconductor thin films
The gallium nitride-based compound semiconductor thin film
Concentration of indium from the side in contact with the
Indium is included to reduce the degree,
Buffer layer and gallium nitride grown on this buffer layer
The lattice constant difference with the compound semiconductor thin film is small near the interface.
The occurrence of distortion and crystal defects is reduced.
An effective effect of improving the crystallinity is obtained. [0064] [0065] [0066] [0067] [0068] [0069]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a main part of a metal organic chemical vapor deposition apparatus used in a first embodiment of the present invention. FIG. S near the buffer layer of gallium compound based semiconductor thin film
FIG. 3 is a graph showing an IMS depth profile. FIG. 3 is a cross-sectional view showing a structure of a gallium nitride-based compound semiconductor light emitting device according to a third embodiment of the present invention. Semiconductor thin film 4 undoped InGaN layer 5 p-type gallium nitride based compound semiconductor thin film 6 p-side electrode 7 n-side electrode

──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Shuichi Shinagawa 1006 Kazuma Kadoma, Kadoma City, Osaka Inside Matsushita Electric Industrial Co., Ltd. (56) References JP-A-7-249795 (JP, A) 326416 (JP, A) JP-A-7-249796 (JP, A) JP-A-7-249820 (JP, A) JP-A 8-293473 (JP, A) JP-A 9-129928 (JP, A) JP-A-9-315899 (JP, A) JP-A-10-93137 (JP, A) JP-A-10-303460 (JP, A) JP-A-10-303458 (JP, A) JP-A-9-307190 (JP, A) JP-A-10-51074 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 33/00 H01L 21/205 H01L 21/86 H01S 5/00-5 / 50

Claims (1)

(1) A method for producing a gallium nitride-based compound semiconductor thin film using metalorganic chemical vapor deposition, comprising: preparing a substrate; and forming a buffer layer containing indium on the substrate. are grown, along with growing a gallium compound semiconductor nitride thin film containing indium on said buffer layer, said nitride gully
In the formation of a thin film of a compound semiconductor thin film,
The side of the lithium-based compound semiconductor thin film in contact with the buffer layer
Indium concentration decreases from
A method for producing a gallium nitride-based compound semiconductor thin film, characterized by including indium .