JP2004528700A5 - - Google Patents
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- Publication number
- JP2004528700A5 JP2004528700A5 JP2001567026A JP2001567026A JP2004528700A5 JP 2004528700 A5 JP2004528700 A5 JP 2004528700A5 JP 2001567026 A JP2001567026 A JP 2001567026A JP 2001567026 A JP2001567026 A JP 2001567026A JP 2004528700 A5 JP2004528700 A5 JP 2004528700A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor material
- barrier layer
- reactor
- passivation barrier
- passivation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims 16
- 239000004065 semiconductor Substances 0.000 claims 15
- 238000002161 passivation Methods 0.000 claims 14
- 230000004888 barrier function Effects 0.000 claims 12
- 239000007789 gas Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 5
- 238000005247 gettering Methods 0.000 claims 5
- 239000001257 hydrogen Substances 0.000 claims 5
- 229910052739 hydrogen Inorganic materials 0.000 claims 5
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000004050 hot filament vapor deposition Methods 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 claims 1
- 230000006641 stabilisation Effects 0.000 claims 1
- 238000011105 stabilization Methods 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18963000P | 2000-03-14 | 2000-03-14 | |
| US60/189,630 | 2000-03-14 | ||
| US09/644,875 US6498111B1 (en) | 2000-08-23 | 2000-08-23 | Fabrication of semiconductor materials and devices with controlled electrical conductivity |
| US09/644,875 | 2000-08-23 | ||
| PCT/US2001/007976 WO2001069659A2 (en) | 2000-03-14 | 2001-03-13 | Fabrication of semiconductor materials and devices with controlled electrical conductivity |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004528700A JP2004528700A (ja) | 2004-09-16 |
| JP2004528700A5 true JP2004528700A5 (https=) | 2005-01-20 |
| JP5314233B2 JP5314233B2 (ja) | 2013-10-16 |
Family
ID=26885351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001567026A Expired - Lifetime JP5314233B2 (ja) | 2000-03-14 | 2001-03-13 | 制御された導電率を有する半導体材料および半導体デバイスの製造方法 |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP1269520A2 (https=) |
| JP (1) | JP5314233B2 (https=) |
| KR (1) | KR100923937B1 (https=) |
| CN (1) | CN100559619C (https=) |
| AU (1) | AU2001243606A1 (https=) |
| CA (1) | CA2402662C (https=) |
| MY (1) | MY126104A (https=) |
| TW (1) | TWI238541B (https=) |
| WO (1) | WO2001069659A2 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1022021C2 (nl) * | 2002-11-28 | 2004-06-02 | Univ Eindhoven Tech | Werkwijze ter vorming van vacatures in een III-V-halfgeleider, een op GaN gebaseerde structuur, en de toepassing hiervan. |
| KR101008285B1 (ko) | 2005-10-28 | 2011-01-13 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
| KR100742988B1 (ko) * | 2005-11-25 | 2007-07-26 | (주)더리즈 | ｐ형 질화갈륨계 디바이스 제조방법 |
| JP2009130316A (ja) * | 2007-11-28 | 2009-06-11 | Panasonic Corp | 窒化物半導体装置およびその製造方法 |
| KR100941877B1 (ko) * | 2008-04-25 | 2010-02-11 | 김화민 | 패시배이션 조성물과 이를 이용한 스퍼터링 타겟과패시배이션막 및 그 제조방법 |
| FR3026558B1 (fr) * | 2014-09-26 | 2018-03-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede d'activation de dopants dans une couche semi-conductrice a base de gan |
| CN104377547B (zh) * | 2014-11-19 | 2017-07-21 | 北京工业大学 | 一种GaN基HEMT和LD单片集成的直接调制半导体激光器结构及其生长过程 |
| TWI548000B (zh) * | 2014-12-22 | 2016-09-01 | 力晶科技股份有限公司 | 半導體元件及其製作方法 |
| CN109285774B (zh) * | 2018-09-12 | 2023-03-24 | 江苏能华微电子科技发展有限公司 | 一种基于氮化镓的结势垒肖特基二极管及其形成方法 |
| CN115606010B (zh) | 2020-06-11 | 2025-07-15 | 苏州晶湛半导体有限公司 | 半导体结构及其制作方法 |
| JPWO2025203491A1 (https=) * | 2024-03-28 | 2025-10-02 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0653550A (ja) * | 1992-07-31 | 1994-02-25 | Toshiba Corp | 多波長光半導体整列素子 |
| JP3244980B2 (ja) * | 1995-01-06 | 2002-01-07 | 株式会社東芝 | 半導体素子の製造方法 |
| JP3325713B2 (ja) * | 1994-08-22 | 2002-09-17 | ローム株式会社 | 半導体発光素子の製法 |
| JP2872096B2 (ja) * | 1996-01-19 | 1999-03-17 | 日本電気株式会社 | 低抵抗ｐ型窒化ガリウム系化合物半導体の気相成長方法 |
| JP3361964B2 (ja) * | 1996-09-10 | 2003-01-07 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
| US5930656A (en) * | 1996-10-21 | 1999-07-27 | Kabushiki Kaisha Toshiba | Method of fabricating a compound semiconductor device |
| JP3326371B2 (ja) * | 1996-10-21 | 2002-09-24 | 東芝電子エンジニアリング株式会社 | 化合物半導体装置の製造方法 |
| JP3463524B2 (ja) * | 1997-08-04 | 2003-11-05 | 松下電器産業株式会社 | 窒化ガリウム系化合物半導体薄膜の製造方法 |
| US5926726A (en) * | 1997-09-12 | 1999-07-20 | Sdl, Inc. | In-situ acceptor activation in group III-v nitride compound semiconductors |
| JP3509514B2 (ja) * | 1997-11-13 | 2004-03-22 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体の製造方法 |
| JP3653384B2 (ja) * | 1998-02-10 | 2005-05-25 | シャープ株式会社 | 発光ダイオードの製造方法 |
| JP2000058462A (ja) * | 1998-08-13 | 2000-02-25 | Sony Corp | 窒化物系ｉｉｉ−ｖ族化合物半導体の製造方法 |
| JP3987985B2 (ja) * | 1999-04-30 | 2007-10-10 | サンケン電気株式会社 | 半導体装置の製造方法 |
| JP3833848B2 (ja) * | 1999-05-10 | 2006-10-18 | パイオニア株式会社 | ３族窒化物半導体素子製造方法 |
| JP4162385B2 (ja) * | 2000-03-02 | 2008-10-08 | 株式会社リコー | ｐ型ＩＩＩ族窒化物半導体の製造方法 |
-
2001
- 2001-03-13 JP JP2001567026A patent/JP5314233B2/ja not_active Expired - Lifetime
- 2001-03-13 EP EP01916604A patent/EP1269520A2/en not_active Ceased
- 2001-03-13 AU AU2001243606A patent/AU2001243606A1/en not_active Abandoned
- 2001-03-13 CA CA2402662A patent/CA2402662C/en not_active Expired - Lifetime
- 2001-03-13 KR KR1020027012087A patent/KR100923937B1/ko not_active Expired - Lifetime
- 2001-03-13 CN CNB018094562A patent/CN100559619C/zh not_active Expired - Lifetime
- 2001-03-13 WO PCT/US2001/007976 patent/WO2001069659A2/en not_active Ceased
- 2001-03-14 MY MYPI20011181A patent/MY126104A/en unknown
- 2001-04-16 TW TW090105940A patent/TWI238541B/zh not_active IP Right Cessation
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