CN100559619C - 具有可控制导电性的半导体材料及器件的制造 - Google Patents

具有可控制导电性的半导体材料及器件的制造 Download PDF

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Publication number
CN100559619C
CN100559619C CNB018094562A CN01809456A CN100559619C CN 100559619 C CN100559619 C CN 100559619C CN B018094562 A CNB018094562 A CN B018094562A CN 01809456 A CN01809456 A CN 01809456A CN 100559619 C CN100559619 C CN 100559619C
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CN
China
Prior art keywords
barrier layer
reactor
semiconductor material
passivation
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB018094562A
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English (en)
Chinese (zh)
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CN1443373A (zh
Inventor
大卫·卡波尼克
布来安·希贝欧特
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Wolfspeed Inc
Original Assignee
Cree Lighting Co
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Publication date
Priority claimed from US09/644,875 external-priority patent/US6498111B1/en
Application filed by Cree Lighting Co filed Critical Cree Lighting Co
Publication of CN1443373A publication Critical patent/CN1443373A/zh
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Publication of CN100559619C publication Critical patent/CN100559619C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/408—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of Group III-V semiconductors, e.g. to render them semi-insulating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
CNB018094562A 2000-03-14 2001-03-13 具有可控制导电性的半导体材料及器件的制造 Expired - Lifetime CN100559619C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US18963000P 2000-03-14 2000-03-14
US60/189,630 2000-03-14
US09/644,875 US6498111B1 (en) 2000-08-23 2000-08-23 Fabrication of semiconductor materials and devices with controlled electrical conductivity
US09/644,875 2000-08-23

Publications (2)

Publication Number Publication Date
CN1443373A CN1443373A (zh) 2003-09-17
CN100559619C true CN100559619C (zh) 2009-11-11

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CNB018094562A Expired - Lifetime CN100559619C (zh) 2000-03-14 2001-03-13 具有可控制导电性的半导体材料及器件的制造

Country Status (9)

Country Link
EP (1) EP1269520A2 (https=)
JP (1) JP5314233B2 (https=)
KR (1) KR100923937B1 (https=)
CN (1) CN100559619C (https=)
AU (1) AU2001243606A1 (https=)
CA (1) CA2402662C (https=)
MY (1) MY126104A (https=)
TW (1) TWI238541B (https=)
WO (1) WO2001069659A2 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1022021C2 (nl) * 2002-11-28 2004-06-02 Univ Eindhoven Tech Werkwijze ter vorming van vacatures in een III-V-halfgeleider, een op GaN gebaseerde structuur, en de toepassing hiervan.
KR101008285B1 (ko) 2005-10-28 2011-01-13 주식회사 에피밸리 3족 질화물 반도체 발광소자
KR100742988B1 (ko) * 2005-11-25 2007-07-26 (주)더리즈 ｐ형 질화갈륨계 디바이스 제조방법
JP2009130316A (ja) * 2007-11-28 2009-06-11 Panasonic Corp 窒化物半導体装置およびその製造方法
KR100941877B1 (ko) * 2008-04-25 2010-02-11 김화민 패시배이션 조성물과 이를 이용한 스퍼터링 타겟과패시배이션막 및 그 제조방법
FR3026558B1 (fr) * 2014-09-26 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede d'activation de dopants dans une couche semi-conductrice a base de gan
CN104377547B (zh) * 2014-11-19 2017-07-21 北京工业大学 一种GaN基HEMT和LD单片集成的直接调制半导体激光器结构及其生长过程
TWI548000B (zh) * 2014-12-22 2016-09-01 力晶科技股份有限公司 半導體元件及其製作方法
CN109285774B (zh) * 2018-09-12 2023-03-24 江苏能华微电子科技发展有限公司 一种基于氮化镓的结势垒肖特基二极管及其形成方法
CN115606010B (zh) 2020-06-11 2025-07-15 苏州晶湛半导体有限公司 半导体结构及其制作方法
JPWO2025203491A1 (https=) * 2024-03-28 2025-10-02

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999013499A2 (en) * 1997-09-12 1999-03-18 Sdl, Inc. In-situ acceptor activation in group iii-v nitride compound semiconductors
US5902393A (en) * 1996-01-19 1999-05-11 Nec Corporation Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy
US5930656A (en) * 1996-10-21 1999-07-27 Kabushiki Kaisha Toshiba Method of fabricating a compound semiconductor device
CN1231519A (zh) * 1998-02-10 1999-10-13 夏普公司 发光二极管的制造方法

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JPH0653550A (ja) * 1992-07-31 1994-02-25 Toshiba Corp 多波長光半導体整列素子
JP3244980B2 (ja) * 1995-01-06 2002-01-07 株式会社東芝 半導体素子の製造方法
JP3325713B2 (ja) * 1994-08-22 2002-09-17 ローム株式会社 半導体発光素子の製法
JP3361964B2 (ja) * 1996-09-10 2003-01-07 株式会社東芝 半導体発光素子およびその製造方法
JP3326371B2 (ja) * 1996-10-21 2002-09-24 東芝電子エンジニアリング株式会社 化合物半導体装置の製造方法
JP3463524B2 (ja) * 1997-08-04 2003-11-05 松下電器産業株式会社 窒化ガリウム系化合物半導体薄膜の製造方法
JP3509514B2 (ja) * 1997-11-13 2004-03-22 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法
JP2000058462A (ja) * 1998-08-13 2000-02-25 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体の製造方法
JP3987985B2 (ja) * 1999-04-30 2007-10-10 サンケン電気株式会社 半導体装置の製造方法
JP3833848B2 (ja) * 1999-05-10 2006-10-18 パイオニア株式会社 ３族窒化物半導体素子製造方法
JP4162385B2 (ja) * 2000-03-02 2008-10-08 株式会社リコー ｐ型ＩＩＩ族窒化物半導体の製造方法

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US5902393A (en) * 1996-01-19 1999-05-11 Nec Corporation Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy
US5930656A (en) * 1996-10-21 1999-07-27 Kabushiki Kaisha Toshiba Method of fabricating a compound semiconductor device
WO1999013499A2 (en) * 1997-09-12 1999-03-18 Sdl, Inc. In-situ acceptor activation in group iii-v nitride compound semiconductors
CN1231519A (zh) * 1998-02-10 1999-10-13 夏普公司 发光二极管的制造方法

Also Published As

Publication number Publication date
KR100923937B1 (ko) 2009-10-29
CN1443373A (zh) 2003-09-17
MY126104A (en) 2006-09-29
TWI238541B (en) 2005-08-21
WO2001069659A3 (en) 2002-02-21
JP2004528700A (ja) 2004-09-16
CA2402662C (en) 2012-06-12
AU2001243606A1 (en) 2001-09-24
WO2001069659A2 (en) 2001-09-20
KR20020079955A (ko) 2002-10-19
JP5314233B2 (ja) 2013-10-16
EP1269520A2 (en) 2003-01-02
CA2402662A1 (en) 2001-09-20

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CI01 Publication of corrected invention patent application

Correction item: Inventor

Correct: David Kaponek|Brian Thibeault

False: David Kaponek|Cotton cloth

Number: 38

Page: 284

Volume: 19

CI02 Correction of invention patent application

Correction item: Inventor

Correct: David Kaponek|Brian Thibeault

False: David Kaponek|Cotton cloth

Number: 38

Page: The title page

Volume: 19

COR Change of bibliographic data

Free format text: CORRECT: INVENTOR; FROM: DA CARPONEK BURAYANBEIOTER TO: LAWMITALIYA CARLO BAGNOUD TIM SCHOTT

ERR Gazette correction

Free format text: CORRECT: INVENTOR; FROM: DA CARPONEK BURAYANBEIOTER TO: LAWMITALIYA CARLO BAGNOUD TIM SCHOTT

CI02 Correction of invention patent application

Correction item: Inventor (first inventor)

Correct: David Kaponek

False: David long Nick

Number: 38

Page: The title page

Volume: 19

COR Change of bibliographic data

Free format text: CORRECT: INVENTOR ( THE FIRST INVENTOR ); FROM: DAVID CHANG-SPUTNIK TO: LAWMITALIYA CARLO BAGNOUD

C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP02 Change in the address of a patent holder

Address after: North Carolina

Patentee after: CREE, Inc.

Address before: California, USA

Patentee before: CREE, Inc.

C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: North Carolina

Patentee after: CREE, Inc.

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Patentee before: CREE, Inc.

CX01 Expiry of patent term
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Granted publication date: 20091111