JPWO2025203491A1 - - Google Patents

Info

Publication number
JPWO2025203491A1
JPWO2025203491A1 JP2026509685A JP2026509685A JPWO2025203491A1 JP WO2025203491 A1 JPWO2025203491 A1 JP WO2025203491A1 JP 2026509685 A JP2026509685 A JP 2026509685A JP 2026509685 A JP2026509685 A JP 2026509685A JP WO2025203491 A1 JPWO2025203491 A1 JP WO2025203491A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2026509685A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2025203491A1 publication Critical patent/JPWO2025203491A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2026509685A 2024-03-28 2024-03-28 Pending JPWO2025203491A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/012811 WO2025203491A1 (ja) 2024-03-28 2024-03-28 半導体レーザ素子及びその製造方法

Publications (1)

Publication Number Publication Date
JPWO2025203491A1 true JPWO2025203491A1 (https=) 2025-10-02

Family

ID=97219275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2026509685A Pending JPWO2025203491A1 (https=) 2024-03-28 2024-03-28

Country Status (2)

Country Link
JP (1) JPWO2025203491A1 (https=)
WO (1) WO2025203491A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146527A (ja) * 2002-10-23 2004-05-20 Sharp Corp 半導体レーザ素子とその製造方法
JP2004528700A (ja) * 2000-03-14 2004-09-16 クリー　インコーポレイテッド 制御された導電率を有する半導体材料および半導体デバイスの製造方法
JP2009043970A (ja) * 2007-08-09 2009-02-26 Panasonic Corp 半導体素子及びその製造方法
JP2009130316A (ja) * 2007-11-28 2009-06-11 Panasonic Corp 窒化物半導体装置およびその製造方法
US8964807B1 (en) * 2013-05-09 2015-02-24 Soraa Laser Diode, Inc. Magnesium based gettering regions for gallium and nitrogen containing laser diode devices
CN107768979A (zh) * 2017-10-17 2018-03-06 北京工业大学 外延集成高对比度光栅外腔面发射激光器
JP6702523B1 (ja) * 2019-10-15 2020-06-03 三菱電機株式会社 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004528700A (ja) * 2000-03-14 2004-09-16 クリー　インコーポレイテッド 制御された導電率を有する半導体材料および半導体デバイスの製造方法
JP2004146527A (ja) * 2002-10-23 2004-05-20 Sharp Corp 半導体レーザ素子とその製造方法
JP2009043970A (ja) * 2007-08-09 2009-02-26 Panasonic Corp 半導体素子及びその製造方法
JP2009130316A (ja) * 2007-11-28 2009-06-11 Panasonic Corp 窒化物半導体装置およびその製造方法
US8964807B1 (en) * 2013-05-09 2015-02-24 Soraa Laser Diode, Inc. Magnesium based gettering regions for gallium and nitrogen containing laser diode devices
CN107768979A (zh) * 2017-10-17 2018-03-06 北京工业大学 外延集成高对比度光栅外腔面发射激光器
JP6702523B1 (ja) * 2019-10-15 2020-06-03 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
WO2025203491A1 (ja) 2025-10-02

Similar Documents

Publication Publication Date Title
CN309940618S (zh) 凳子（贵宾犬）
JPWO2025203491A1 (https=)
CN308417957S (https=)
CN308417993S (https=)
CN309651289S (https=)
CN309608544S (https=)
CN309606924S (https=)
CN309605219S (https=)
CN309596116S (https=)
CN309483811S (https=)
CN309386808S (https=)
CN308404583S (https=)
CN308955405S (https=)
CN308916888S (https=)
CN308408613S (https=)
CN308589878S (https=)
CN308455451S (https=)
CN308421848S (https=)
CN308421203S (https=)
CN308421195S (https=)
CN308421189S (https=)
CN308420733S (https=)
CN308419995S (https=)
CN308419788S (https=)
CN308418881S (https=)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260305

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20260305

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20260305

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20260324

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260414