JP5291736B2 - フィン型fetを有する半導体装置およびその製造方法 - Google Patents
フィン型fetを有する半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP5291736B2 JP5291736B2 JP2011042416A JP2011042416A JP5291736B2 JP 5291736 B2 JP5291736 B2 JP 5291736B2 JP 2011042416 A JP2011042416 A JP 2011042416A JP 2011042416 A JP2011042416 A JP 2011042416A JP 5291736 B2 JP5291736 B2 JP 5291736B2
- Authority
- JP
- Japan
- Prior art keywords
- fin
- fins
- height
- dielectric material
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000002353 field-effect transistor method Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims description 30
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 27
- 239000003989 dielectric material Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 17
- 230000009969 flowable effect Effects 0.000 claims description 13
- 238000002955 isolation Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims 1
- 230000008023 solidification Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/845—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
- Formation Of Insulating Films (AREA)
Description
101 半導体基板
102 シャロートレンチアイソレーション(STI)領域
104 シャロートレンチアイソレーション領域
105 フィン
106 フィン
106e Si、SiP、SiC層
106L 横方向延伸
107 ステップ高
108 ゲート
109 横方向延伸
110 側壁スペーサ
112 ハードマスク
124 SiGe(フィン)
124L 横方向延伸
200 装置
201 半導体基板
202 シャロートレンチアイソレーション領域
205 第1のフィン
206 第2のフィン
206e Si、SiP、SiC層
207 間隙
207a 第1の高さ
207b 高さ
207c 第2の高さ
208 ゲート(ゲート導体)
209 横方向延伸
210 側壁スペーサ
211 延伸の長さ
212 ハードマスク
214 誘電膜
214e エッチバック薄膜
214s 平坦面
216 酸化物層
218 窒化物層
220 フォトレジスト
222 窒化物層
223 凹部
224 フォトレジスト
226 SiGe構造
Claims (10)
- フィン型電界効果トランジスタを有する半導体装置の製造方法であって、
半導体基板上に延伸する第1のフィンおよび第2のフィンであって、前記第1のフィンと前記第2のフィンとの間にシャロートレンチアイソレーション(STI)領域を有し、前記STI領域の上面上の前記第1のフィンと前記第2のフィンとの間に間隙が定められ、前記STI領域の上面と前記第1のフィンおよび前記第2のフィンの上面との間に第1の高さが定められるように、前記第1のフィンおよび前記第2のフィンを形成するステップ、
前記第1および第2のフィンの一部の上面および側面にゲート電極を形成した後に、流動性の誘電材料を前記間隙内に堆積させ、前記誘電材料は、前記STI領域の上面上に上面を有して、前記誘電材料の上面と前記第1および第2のフィンの上面との間を第2の高さとし、前記第2の高さは、前記第1の高さより低くなるように流動性の誘電材料を堆積するステップ、
前記誘電材料の堆積のステップの後、前記第1および第2のフィンの露出している上面および側面でそれぞれ前記誘電材料の上方に、前記第1および第2のフィンの延伸をエピタキシャル成長で形成するステップを含む半導体装置の製造方法。 - 前記第2の高さは、前記エピタキシャル形成のステップの間、前記第1および第2のフィンの延伸の結合を防ぐのに十分な程度に、前記第1の高さより小さい請求項1記載の方法。
- 前記誘電材料の堆積のステップは、20℃の温度および100kPaの圧力で行われる低圧化学気相成長(LPCVD)プロセスを含む請求項1記載の方法。
- 前記誘電材料の堆積のステップ後、200℃の温度および600Torrの圧力で10分、オゾンの固化ステップを実行し、かつ400℃の温度で20秒、O2のプラズマ処理ステップを行うステップをさらに含む請求項3記載の方法。
- 前記第2の高さの前記第1の高さに対する割合は、50%〜67%の間である請求項1記載の方法。
- 前記エピタキシャル成長で形成するステップは、前記第1および第2のフィンの少なくとも1つの上面および側面にSiGeを成長させるステップを含む請求項1記載の方法。
- 前記第1および第2のフィンの1つの上面に、凹部を形成するステップをさらに含み、前記エピタキシャル成長で形成するステップは、SiGeを成長させて前記凹部を充填するステップを含む請求項1に記載の方法。
- フィン型FETを有する半導体装置であって、
半導体基板上で、該半導体基板の上面視で第1の方向に延伸して形成される第1のフィンおよび第2のフィンであって、該第1および第2のフィンの間にシャロートレンチアイソレーション(STI)領域を有し、前記STI領域の上面上の前記第1と第2のフィンとの間に間隙が形成される第1および第2のフィン、
前記第1および第2のフィン上にあり、前記第1の方向に垂直な第2の方向を有する第1のゲート電極、
前記第1および第2のフィン、および前記第1のゲート電極に覆われずに露出している前記STI領域の上面に形成される流動性誘電材料層であって、該流動性誘電材料層の上面と前記第1および第2のフィンの上面との間の第2の高さが、前記STI領域の上面と前記第1および第2のフィンの上面との間の第1の高さより小さくなるように形成される流動性誘電材料層、
前記流動性誘電材料層の上方にあり、かつ、それぞれ前記第1および第2のフィンの上面および側面で前記フィンが延伸し、前記流動性誘電材料層の上方で、前記フィンの側端を超えて延伸し、エピタキシャルSiGeからなる第1および第2のフィン延伸部
を含むフィン型FETを有する半導体装置。 - 前記第1および第2のフィンの少なくとも1つは、その上部分に凹部を有し、前記凹部は、エピタキシャルSiGeで充填される請求項8記載のフィン型FETを有する半導体装置。
- 前記第2の高さの前記第1の高さに対する割合は、50%〜67%である請求項8記載のフィン型FETを有する半導体装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/714,796 US8937353B2 (en) | 2010-03-01 | 2010-03-01 | Dual epitaxial process for a finFET device |
US12/714,796 | 2010-03-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011181931A JP2011181931A (ja) | 2011-09-15 |
JP5291736B2 true JP5291736B2 (ja) | 2013-09-18 |
Family
ID=44504844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011042416A Active JP5291736B2 (ja) | 2010-03-01 | 2011-02-28 | フィン型fetを有する半導体装置およびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8937353B2 (ja) |
JP (1) | JP5291736B2 (ja) |
KR (1) | KR101153158B1 (ja) |
CN (1) | CN102194755B (ja) |
Families Citing this family (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8441072B2 (en) * | 2011-09-02 | 2013-05-14 | United Microelectronics Corp. | Non-planar semiconductor structure and fabrication method thereof |
US9847225B2 (en) * | 2011-11-15 | 2017-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacturing the same |
US8637931B2 (en) | 2011-12-27 | 2014-01-28 | International Business Machines Corporation | finFET with merged fins and vertical silicide |
US8609499B2 (en) * | 2012-01-09 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and the methods for forming the same |
US8779517B2 (en) * | 2012-03-08 | 2014-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET-based ESD devices and methods for forming the same |
CN103367160B (zh) * | 2012-03-31 | 2015-09-02 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应管的形成方法 |
CN102646599B (zh) | 2012-04-09 | 2014-11-26 | 北京大学 | 一种大规模集成电路中FinFET的制备方法 |
US8835243B2 (en) * | 2012-05-04 | 2014-09-16 | United Microelectronics Corp. | Semiconductor process |
US8586455B1 (en) * | 2012-05-15 | 2013-11-19 | International Business Machines Corporation | Preventing shorting of adjacent devices |
US8569152B1 (en) | 2012-06-04 | 2013-10-29 | International Business Machines Corporation | Cut-very-last dual-epi flow |
US8697515B2 (en) * | 2012-06-06 | 2014-04-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a FinFET device |
US8729634B2 (en) * | 2012-06-15 | 2014-05-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET with high mobility and strain channel |
KR101909204B1 (ko) | 2012-06-25 | 2018-10-17 | 삼성전자 주식회사 | 내장된 스트레인-유도 패턴을 갖는 반도체 소자 및 그 형성 방법 |
US9142400B1 (en) | 2012-07-17 | 2015-09-22 | Stc.Unm | Method of making a heteroepitaxial layer on a seed area |
US9059323B2 (en) | 2012-08-03 | 2015-06-16 | International Business Machines Corporation | Method of forming fin-field effect transistor (finFET) structure |
US8703556B2 (en) * | 2012-08-30 | 2014-04-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a FinFET device |
CN103681272A (zh) * | 2012-09-04 | 2014-03-26 | 中芯国际集成电路制造(上海)有限公司 | 一种鳍片场效应晶体管的制备方法 |
US8765563B2 (en) * | 2012-09-28 | 2014-07-01 | Intel Corporation | Trench confined epitaxially grown device layer(s) |
KR102049774B1 (ko) | 2013-01-24 | 2019-11-28 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
US8921191B2 (en) * | 2013-02-05 | 2014-12-30 | GlobalFoundries, Inc. | Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same |
US8823060B1 (en) | 2013-02-20 | 2014-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for inducing strain in FinFET channels |
US9443961B2 (en) | 2013-03-12 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor strips with undercuts and methods for forming the same |
US9214555B2 (en) | 2013-03-12 | 2015-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Barrier layer for FinFET channels |
US9034715B2 (en) | 2013-03-12 | 2015-05-19 | International Business Machines Corporation | Method and structure for dielectric isolation in a fin field effect transistor |
US9564309B2 (en) | 2013-03-14 | 2017-02-07 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US9824881B2 (en) * | 2013-03-14 | 2017-11-21 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US9087724B2 (en) | 2013-03-21 | 2015-07-21 | International Business Machines Corporation | Method and structure for finFET CMOS |
US8916932B2 (en) | 2013-05-08 | 2014-12-23 | International Business Machines Corporation | Semiconductor device including FINFET structures with varied epitaxial regions, related method and design structure |
US8981487B2 (en) | 2013-07-31 | 2015-03-17 | United Microelectronics Corp. | Fin-shaped field-effect transistor (FinFET) |
US9105582B2 (en) * | 2013-08-15 | 2015-08-11 | United Microelectronics Corporation | Spatial semiconductor structure and method of fabricating the same |
CN104425372B (zh) * | 2013-08-20 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | 反相器的形成方法及反相器 |
US9112030B2 (en) * | 2013-11-04 | 2015-08-18 | United Microelectronics Corp. | Epitaxial structure and process thereof for non-planar transistor |
US20150145067A1 (en) * | 2013-11-28 | 2015-05-28 | United Microelectronics Corp. | Fin structure |
US9343320B2 (en) | 2013-12-06 | 2016-05-17 | Globalfoundries Inc. | Pattern factor dependency alleviation for eDRAM and logic devices with disposable fill to ease deep trench integration with fins |
CN104733311A (zh) * | 2013-12-18 | 2015-06-24 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管的形成方法 |
CN104752351B (zh) * | 2013-12-30 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
KR102157839B1 (ko) | 2014-01-21 | 2020-09-18 | 삼성전자주식회사 | 핀-전계효과 트랜지스터의 소오스/드레인 영역들을 선택적으로 성장시키는 방법 |
KR102193493B1 (ko) | 2014-02-03 | 2020-12-21 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US9299780B2 (en) | 2014-03-26 | 2016-03-29 | International Business Machines Corporation | Constrained epitaxial source/drain regions on semiconductor-on-insulator finFET device |
KR102017611B1 (ko) | 2014-04-04 | 2019-09-04 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
US9985030B2 (en) | 2014-04-07 | 2018-05-29 | International Business Machines Corporation | FinFET semiconductor device having integrated SiGe fin |
US9443963B2 (en) | 2014-04-07 | 2016-09-13 | International Business Machines Corporation | SiGe FinFET with improved junction doping control |
US9887196B2 (en) | 2014-04-07 | 2018-02-06 | International Business Machines Corporation | FinFET including tunable fin height and tunable fin width ratio |
US9312360B2 (en) * | 2014-05-01 | 2016-04-12 | International Business Machines Corporation | FinFET with epitaxial source and drain regions and dielectric isolated channel region |
US9312364B2 (en) | 2014-05-27 | 2016-04-12 | International Business Machines Corporation | finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
KR102200345B1 (ko) | 2014-06-26 | 2021-01-11 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
CN105304490B (zh) | 2014-07-23 | 2020-09-15 | 联华电子股份有限公司 | 半导体结构的制作方法 |
KR102227128B1 (ko) | 2014-09-03 | 2021-03-12 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US9209279B1 (en) * | 2014-09-12 | 2015-12-08 | Applied Materials, Inc. | Self aligned replacement fin formation |
US9576792B2 (en) | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
KR102245133B1 (ko) | 2014-10-13 | 2021-04-28 | 삼성전자 주식회사 | 이종 게이트 구조의 finFET를 구비한 반도체 소자 및 그 제조방법 |
US9385191B2 (en) | 2014-11-20 | 2016-07-05 | United Microelectronics Corporation | FINFET structure |
CN107004713B (zh) * | 2014-12-24 | 2021-02-09 | 英特尔公司 | 形成具有非对称外形的鳍状物结构的装置和方法 |
CN105826188B (zh) * | 2015-01-06 | 2019-11-01 | 中芯国际集成电路制造(上海)有限公司 | N型鳍式场效应晶体管及其形成方法 |
CN105826194A (zh) * | 2015-01-07 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
US9276013B1 (en) | 2015-01-21 | 2016-03-01 | International Business Machines Corporation | Integrated formation of Si and SiGe fins |
US9761699B2 (en) | 2015-01-28 | 2017-09-12 | International Business Machines Corporation | Integration of strained silicon germanium PFET device and silicon NFET device for finFET structures |
US9362407B1 (en) | 2015-03-27 | 2016-06-07 | International Business Machines Corporation | Symmetrical extension junction formation with low-K spacer and dual epitaxial process in FinFET device |
KR102379267B1 (ko) | 2015-04-01 | 2022-03-28 | 삼성전자주식회사 | 아이솔레이션 영역 상의 스페이서를 갖는 반도체 소자 |
US9754941B2 (en) | 2015-06-03 | 2017-09-05 | Globalfoundries Inc. | Method and structure to form tensile strained SiGe fins and compressive strained SiGe fins on a same substrate |
US9935178B2 (en) * | 2015-06-11 | 2018-04-03 | International Business Machines Corporation | Self-aligned channel-only semiconductor-on-insulator field effect transistor |
US9627278B2 (en) | 2015-06-16 | 2017-04-18 | International Business Machines Corporation | Method of source/drain height control in dual epi finFET formation |
US9330984B1 (en) * | 2015-07-08 | 2016-05-03 | International Business Machines Corporation | CMOS fin integration on SOI substrate |
US10410857B2 (en) | 2015-08-24 | 2019-09-10 | Asm Ip Holding B.V. | Formation of SiN thin films |
US9450094B1 (en) | 2015-09-08 | 2016-09-20 | United Microelectronics Corp. | Semiconductor process and fin-shaped field effect transistor |
US10529717B2 (en) * | 2015-09-25 | 2020-01-07 | International Business Machines Corporation | Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction |
KR102323943B1 (ko) | 2015-10-21 | 2021-11-08 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
KR102427326B1 (ko) | 2015-10-26 | 2022-08-01 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
US10026662B2 (en) * | 2015-11-06 | 2018-07-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure and fabricating method thereof |
US9536989B1 (en) | 2016-02-15 | 2017-01-03 | Globalfoundries Inc. | Field-effect transistors with source/drain regions of reduced topography |
KR102521379B1 (ko) | 2016-04-11 | 2023-04-14 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
US9917154B2 (en) | 2016-06-29 | 2018-03-13 | International Business Machines Corporation | Strained and unstrained semiconductor device features formed on the same substrate |
US9882051B1 (en) * | 2016-09-15 | 2018-01-30 | Qualcomm Incorporated | Fin field effect transistors (FETs) (FinFETs) employing dielectric material layers to apply stress to channel regions |
US9917210B1 (en) | 2016-10-20 | 2018-03-13 | International Business Machines Corporation | FinFET transistor gate and epitaxy formation |
KR102330087B1 (ko) * | 2017-04-03 | 2021-11-22 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US10847360B2 (en) * | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
CN109273440B (zh) | 2017-07-18 | 2021-06-22 | 联华电子股份有限公司 | 具伸张应力鳍状结构的制作方法与互补式鳍状晶体管结构 |
CN109786327B (zh) * | 2017-11-10 | 2021-07-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
US10340384B2 (en) * | 2017-11-30 | 2019-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing fin field-effect transistor device |
US10727352B2 (en) * | 2018-01-26 | 2020-07-28 | International Business Machines Corporation | Long-channel fin field effect transistors |
TWI705529B (zh) * | 2018-02-15 | 2020-09-21 | 美商應用材料股份有限公司 | 空氣間隙形成處理 |
US10529831B1 (en) * | 2018-08-03 | 2020-01-07 | Globalfoundries Inc. | Methods, apparatus, and system for forming epitaxial formations with reduced risk of merging |
US11031489B2 (en) * | 2018-09-26 | 2021-06-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device |
CN114765171A (zh) | 2021-01-14 | 2022-07-19 | 联华电子股份有限公司 | 半导体结构及其制作方法 |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05218416A (ja) | 1992-01-31 | 1993-08-27 | Kawasaki Steel Corp | 半導体装置の製造方法 |
US6413802B1 (en) | 2000-10-23 | 2002-07-02 | The Regents Of The University Of California | Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture |
US6657252B2 (en) | 2002-03-19 | 2003-12-02 | International Business Machines Corporation | FinFET CMOS with NVRAM capability |
US7358121B2 (en) | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
US6706571B1 (en) | 2002-10-22 | 2004-03-16 | Advanced Micro Devices, Inc. | Method for forming multiple structures in a semiconductor device |
US7214991B2 (en) | 2002-12-06 | 2007-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS inverters configured using multiple-gate transistors |
US6815738B2 (en) * | 2003-02-28 | 2004-11-09 | International Business Machines Corporation | Multiple gate MOSFET structure with strained Si Fin body |
TWI231994B (en) * | 2003-04-04 | 2005-05-01 | Univ Nat Taiwan | Strained Si FinFET |
US7045401B2 (en) * | 2003-06-23 | 2006-05-16 | Sharp Laboratories Of America, Inc. | Strained silicon finFET device |
KR100521382B1 (ko) * | 2003-06-30 | 2005-10-12 | 삼성전자주식회사 | 핀 전계효과 트랜지스터 제조 방법 |
KR100513405B1 (ko) | 2003-12-16 | 2005-09-09 | 삼성전자주식회사 | 핀 트랜지스터의 형성 방법 |
US7122412B2 (en) * | 2004-04-30 | 2006-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a necked FINFET device |
US7355233B2 (en) * | 2004-05-12 | 2008-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for multiple-gate semiconductor device with angled sidewalls |
US6969659B1 (en) * | 2004-08-12 | 2005-11-29 | International Business Machines Corporation | FinFETs (Fin Field Effect Transistors) |
US7244640B2 (en) * | 2004-10-19 | 2007-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a body contact in a Finfet structure and a device including the same |
US7790633B1 (en) * | 2004-10-26 | 2010-09-07 | Novellus Systems, Inc. | Sequential deposition/anneal film densification method |
US7250657B2 (en) * | 2005-03-11 | 2007-07-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Layout structure for memory arrays with SOI devices |
US7605449B2 (en) | 2005-07-01 | 2009-10-20 | Synopsys, Inc. | Enhanced segmented channel MOS transistor with high-permittivity dielectric isolation material |
US7508031B2 (en) | 2005-07-01 | 2009-03-24 | Synopsys, Inc. | Enhanced segmented channel MOS transistor with narrowed base regions |
US7190050B2 (en) | 2005-07-01 | 2007-03-13 | Synopsys, Inc. | Integrated circuit on corrugated substrate |
US7247887B2 (en) | 2005-07-01 | 2007-07-24 | Synopsys, Inc. | Segmented channel MOS transistor |
US8466490B2 (en) | 2005-07-01 | 2013-06-18 | Synopsys, Inc. | Enhanced segmented channel MOS transistor with multi layer regions |
US7265008B2 (en) | 2005-07-01 | 2007-09-04 | Synopsys, Inc. | Method of IC production using corrugated substrate |
US7807523B2 (en) | 2005-07-01 | 2010-10-05 | Synopsys, Inc. | Sequential selective epitaxial growth |
US7589387B2 (en) * | 2005-10-05 | 2009-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | SONOS type two-bit FinFET flash memory cell |
US7425740B2 (en) * | 2005-10-07 | 2008-09-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structure for a 1T-RAM bit cell and macro |
US7564081B2 (en) * | 2005-11-30 | 2009-07-21 | International Business Machines Corporation | finFET structure with multiply stressed gate electrode |
JP2007165780A (ja) * | 2005-12-16 | 2007-06-28 | Toshiba Corp | 半導体装置 |
US7425500B2 (en) * | 2006-03-31 | 2008-09-16 | Intel Corporation | Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistors |
US8946811B2 (en) * | 2006-07-10 | 2015-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Body-tied, strained-channel multi-gate device and methods of manufacturing same |
US8558278B2 (en) * | 2007-01-16 | 2013-10-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained transistor with optimized drive current and method of forming |
US7939862B2 (en) | 2007-05-30 | 2011-05-10 | Synopsys, Inc. | Stress-enhanced performance of a FinFet using surface/channel orientations and strained capping layers |
US8174073B2 (en) * | 2007-05-30 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit structures with multiple FinFETs |
JP2009032955A (ja) * | 2007-07-27 | 2009-02-12 | Toshiba Corp | 半導体装置、およびその製造方法 |
JP2009054705A (ja) * | 2007-08-24 | 2009-03-12 | Toshiba Corp | 半導体基板、半導体装置およびその製造方法 |
US7833889B2 (en) * | 2008-03-14 | 2010-11-16 | Intel Corporation | Apparatus and methods for improving multi-gate device performance |
JP5159413B2 (ja) * | 2008-04-24 | 2013-03-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
US8169024B2 (en) * | 2009-08-18 | 2012-05-01 | International Business Machines Corporation | Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation |
US8362568B2 (en) * | 2009-08-28 | 2013-01-29 | International Business Machines Corporation | Recessed contact for multi-gate FET optimizing series resistance |
US8716797B2 (en) * | 2009-11-03 | 2014-05-06 | International Business Machines Corporation | FinFET spacer formation by oriented implantation |
-
2010
- 2010-03-01 US US12/714,796 patent/US8937353B2/en active Active
- 2010-08-02 CN CN201010243829.6A patent/CN102194755B/zh active Active
- 2010-08-13 KR KR20100078463A patent/KR101153158B1/ko active IP Right Grant
-
2011
- 2011-02-28 JP JP2011042416A patent/JP5291736B2/ja active Active
-
2014
- 2014-11-26 US US14/554,179 patent/US9224737B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN102194755A (zh) | 2011-09-21 |
KR20110099156A (ko) | 2011-09-07 |
US20110210393A1 (en) | 2011-09-01 |
CN102194755B (zh) | 2014-02-26 |
US8937353B2 (en) | 2015-01-20 |
KR101153158B1 (ko) | 2012-07-03 |
US20150115322A1 (en) | 2015-04-30 |
JP2011181931A (ja) | 2011-09-15 |
US9224737B2 (en) | 2015-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5291736B2 (ja) | フィン型fetを有する半導体装置およびその製造方法 | |
US10515856B2 (en) | Method of making a FinFET, and FinFET formed by the method | |
KR101683985B1 (ko) | 매립된 절연체층을 가진 finfet 디바이스 | |
TWI505402B (zh) | 在塊體半導體材料上形成隔離鰭結構的方法 | |
JP5230737B2 (ja) | 異なる高さの隣接シリコンフィンを製造する方法 | |
US20160005838A1 (en) | PROCESS FOR FABRICATING FIN-TYPE FIELD EFFECT TRANSISTOR (FinFET) STRUCTURE | |
US20050224800A1 (en) | Bulk non-planar transistor having strained enhanced mobility and methods of fabrication | |
US20100207209A1 (en) | Semiconductor device and producing method thereof | |
US9362178B1 (en) | FinFET including varied fin height | |
WO2012100396A1 (zh) | 半导体器件及其制造方法 | |
US10468412B2 (en) | Formation of a semiconductor device with selective nitride grown on conductor | |
US20160307894A1 (en) | Finfet semiconductor device having fins with stronger structural strength | |
KR100618827B1 (ko) | FinFET을 포함하는 반도체 소자 및 그 제조방법 | |
US7982269B2 (en) | Transistors having asymmetric strained source/drain portions | |
TW201740563A (zh) | 半導體裝置的鰭狀結構以及鰭式場效電晶體裝置 | |
WO2012027864A1 (zh) | 半导体结构及其制造方法 | |
US10008582B2 (en) | Spacers for tight gate pitches in field effect transistors | |
CN110233108B (zh) | 一种围栅器件及其制造方法 | |
KR20160061615A (ko) | 반도체 장치의 제조 방법 | |
TW202240900A (zh) | 半導體裝置及其製造方法 | |
TWI699886B (zh) | 半導體裝置及其製造方法 | |
JP2010010382A (ja) | 半導体装置およびその製造方法 | |
CN115719707A (zh) | 一种围栅器件及其制造方法 | |
JP6255692B2 (ja) | 半導体装置の製造方法 | |
JP2012186439A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120914 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121002 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130129 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130424 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130514 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130607 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5291736 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |