CN109273440B - 具伸张应力鳍状结构的制作方法与互补式鳍状晶体管结构 - Google Patents

具伸张应力鳍状结构的制作方法与互补式鳍状晶体管结构 Download PDF

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CN109273440B
CN109273440B CN201710584810.XA CN201710584810A CN109273440B CN 109273440 B CN109273440 B CN 109273440B CN 201710584810 A CN201710584810 A CN 201710584810A CN 109273440 B CN109273440 B CN 109273440B
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fin
silicon oxide
oxide layer
fin structure
trenches
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CN109273440A (zh
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李凯霖
李志成
陈威任
康庭绚
何仁愉
黄泓文
陈纪孝
杨皓翔
石安石
谢宗翰
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United Microelectronics Corp
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Abstract

本发明公开一种具有伸张应力的鳍状结构的制作方法与互补式鳍状晶体管结构，其具有伸张应力的鳍状结构的制作方法，包含提供一基底包含一N型晶体管区和一P型晶体管区，接着形成二第一沟槽和二第二沟槽于基底中，第一沟槽定义出一鳍状结构，第二沟槽截断第一沟槽，然后进行一流动型化学气相沉积步骤，以形成一氧化硅层填入第一沟槽和第二沟槽，之后形成一图案化掩模只位于N型晶体管区，图案化掩模只重叠位于第二沟槽内的氧化硅层，然后以图案化掩模为掩模，去除部分的氧化硅层直至曝露出的氧化硅层的上表面低于鳍状结构的上表面。

Description

具伸张应力鳍状结构的制作方法与互补式鳍状晶体管结构
技术领域
本发明涉及一种具有伸张应力的鳍状结构的制作方法，特别是涉及利用单一扩散隔离结构提供鳍状结构伸张应力的制作方法。
背景技术
随着场效晶体管(Field Effect Transistors,FETs)元件尺寸持续地缩小，现有平面式场效晶体管元件的发展已面临制作工艺上的极限。为了克服制作工艺限制，以非平面的场效晶体管元件，例如鳍状场效晶体管(Fin Field Effect Transistor,Fin FET)元件取代平面晶体管元件已成为目前的主流发展趋趋势。
业界已知可对元件施加应力(stress)而达到增进效能的目的。常用的方法包含在元件的源/漏极区制作应变硅(strained silicon)，或者是形成一应力层(stressorlayer)，例如形成具有应力的间隙壁(spacer)或接触蚀刻停止层(contact etching stoplayer,CESL)直接覆盖栅极结构。然而，对于互补式金属氧化物半导体元件，其中具P导电型晶体管和N导电型晶体管对于应力的反应常具有相反的趋势，例如压缩(compressive)应力有利于提升P导电型晶体管的效能，但却不利于N导电型晶体管的效能。相反的，伸张(tensile)应力有利于提升N导电型晶体管的效能，但却不利于P导电型晶体管的效能。
有鉴于此，本领域仍需要一种改良的互补式金属氧化物半导体元件，可差异化地针对其中不同导电型的半导体元件提供不同应力而分别增其效能。
发明内容
根据本发明的一优选实施例，一种具有伸张应力的鳍状结构的制作方法，包含首先提供一基底包含一N型晶体管区和一P型晶体管区，接着形成二条第一沟槽和二条第二沟槽于基底中，第一沟槽定义一鳍状结构，第二沟槽截断第一沟槽和鳍状结构，然后进行一流动型化学气相沉积步骤，以形成一氧化硅层填入各条第一沟槽和各条第二沟槽，接续平坦化氧化硅层，使得氧化硅层的上表面不低于鳍状结构的上表面，之后形成一图案化掩模只位于N型晶体管区，图案化掩模只重叠位于第二沟槽内的氧化硅层，然后图案化掩模为掩模，去除部分的氧化硅层直至位于N型晶体管区内第一沟槽中的氧化硅层的上表面以及位于P型晶体管区内的氧化硅层的上表面低于鳍状结构的上表面，最后移除图案化掩模。
根据本发明的另一优选实施例，一种互补式鳍状晶体管结构，包含一N型鳍状晶体管和一P型鳍状晶体管，N型鳍状晶体管包含：一第一鳍状结构，二浅沟槽隔离分别位于第一鳍状结构的相对两侧，第一单一扩散隔离结构分别位于第一鳍状结构的两末端，其中第一单一扩散隔离结构的上表面不低于第一鳍状结构的上表面，一第一栅极结构横跨第一鳍状结构，一第一源极/漏极掺杂区位于第一栅极结构两侧的第一鳍状结构内，P型鳍状晶体管，包含一第二鳍状结构，浅沟槽隔离分别位于第二鳍状结构的相对两侧，二第二单一扩散隔离结构分别位于第二鳍状结构的两末端，其中第二单一扩散隔离结构的上表面低于第二鳍状结构的上表面，一第二栅极结构横跨第二鳍状结构以及一第二源极/漏极掺杂区位于第二栅极结构两侧的第二鳍状结构内。
附图说明
图1至图8为本发明的第一优选实施例所绘示的具有伸张应力的鳍状结构的制作方法示意图；
图9至图10为本发明的第二优选实施例所绘示的具有伸张应力的鳍状结构的制作方法示意图。
主要元件符号说明
10 基底 12 第一沟槽
14 第二沟槽 16 第一鳍状结构
18 第二鳍状结构 20 氧化硅层
22 图案化掩模 24 浅沟槽隔离
26 单一扩散隔离结构 26a 单一扩散隔离结构
26b 单一扩散隔离结构 28 第一栅极结构
30 第二栅极结构 32 过路栅极
34 间隙壁 36 多晶硅栅极
38 介电层 40 外延层
42 源极/漏极掺杂区 44 源极/漏极掺杂区
46 层间介电层 48 栅极介电层
50 金属栅极 52 第一金属栅极结构
54 第二金属栅极结构 100 N型晶体管区
200 P型晶体管区 300 互补式鳍状晶体管结构
400 N型鳍状晶体管 500 P型鳍状晶体管
具体实施方式
图1至图8为根据本发明的第一优选实施例所绘示的具有伸张应力的鳍状结构的制作方法示意图，其中图1为基底、第一沟槽和第二沟槽的上视图，图2中的范例(a)为沿着图1中A-A’切线的剖面示意图，图2的范例(b)为沿着图1中B-B’切线的剖面示意图，图3为接续图2的制作工艺示意图，图3至图8中的范例(a)和范例(b)都是接续前图中的范例(a)和范例(b)的示意图。
请同时参阅图1和图2，首先提供一基底10，例如一硅基底等的半导体材料，基底10划分为一N型晶体管区100和一P型晶体管区200，接着在基底10上形成多条第一沟槽12和多条第二沟槽14于基底10中，第二沟槽14截断第一沟槽12，详细来说一条第二沟槽14穿过多条第一沟槽12，二条第一沟槽12之间定义出一条长的鳍状结构，多条第二沟槽14则将长的鳍状结构截断为多条短的鳍状结构。多条短的鳍状结构中的一第一鳍状结构16位于N型晶体管区100，一第二鳍状结构18位于P型晶体管区200，其中第一鳍状结构16的上表面和第二鳍状结构18的上表面切齐。
如图3所示，进行一流动型化学气相沉积(flowable chemical vapordeposition)步骤，以形成一氧化硅层20覆盖于整个基底10并且填入各个第一沟槽12和各个第二沟槽14，流动型化学气相沉积利用旋转晶片的方式将氧化硅涂布在基底10上。在沉积之后利用加热步骤将氧化硅层20致密化，接着如图4所示，进行一平坦化步骤，平坦化氧化硅层20，并且在平坦化氧化硅层20后，维持氧化硅层20的上表面不低于第一鳍状结构16和第二鳍状结构18的上表面，在图4中以氧化硅层20的上表面高于第一鳍状结构16和第二鳍状结构18的上表面为例。
如图5所示，形成一掩模(图未示)全面覆盖基底10，掩模可以为一光致抗蚀剂，然后图案化掩模后形成一图案化掩模22，图案化掩模22只位于N型晶体管区100，并且只重叠位于第二沟槽14内的氧化硅层20，如图6所示，以图案化掩模22为掩模，去除部分的氧化硅层20直至位于各个第一沟槽12内以及位于P型晶体管区200内的第二沟槽14中的氧化硅层20的上表面低于第一鳍状结构16和第二鳍状结构18的上表面，并且曝露出基底10的水平表面。然后移除图案化掩模22。此时余留在第一沟槽12内的氧化硅层20就作浅沟槽隔离24，而余留在第二沟槽内的氧化硅层20就作为单一扩散隔离结构(single diffusion break,SDB)26，为了清楚描述本发明，在N型晶体管区100内的单一扩散隔离结构26在后续标记为26a，在P型晶体管区200内的单一扩散隔离结构26在后续标记为26b。值得注意的是：在N型晶体管区100内的单一扩散隔离结构26a在形成过程中被图案化掩模22保护，所以会维持其上表面不低于第一鳍状结构16的上表面，而在P型晶体管区200内的单一扩散隔离结构26b以及基底10上所有浅沟槽隔离24在形成过程中未被图案化掩模22覆盖，因此其不但同时形成且两者的上表面均会低于第一鳍状结构16和第二鳍状结构18的上表面，此外单一扩散隔离结构26b的上表面和浅沟槽隔离24切齐。
由于利用流动型化学气相沉积步骤所形成的氧化硅层20会提供伸张应力，而单一扩散隔离结构26a被维持在不低于第一鳍状结构16的上表面，所以在本实施例中，N型晶体管区100的第一鳍状结构16被凸出于第一鳍状结构16的上表面的单一扩散隔离结构26a夹在其间，因此氧化硅层20会对第一鳍状结构16提供伸张应力。但由于第二鳍状结构18的两末端的单一扩散隔离结构26b的上表面比第二鳍状结构18低，因此单一扩散隔离结构26b不会向第二鳍状结构18提供伸张应力。此时若需要在第二鳍状结构18上施加压缩应力的话，可以在单一扩散隔离结构26b上的第二沟槽14里形具压缩应力的材料(图未示)，例如氮化硅，并使其凸出于第二鳍状结构18的上表面。接着如图7所示，在N型晶体管区100和P型晶体管区200中，进行一栅极结构制作工艺，在第一鳍状结构16和第二鳍状结构18上分别形成第一栅极结构28和第二栅极结构30，在单一扩散隔离结构26a/26b上形成过路栅极(passinggate)结构32，然后再形成一间隙壁34于第一栅极结构28、第二栅极结构30和各个过路栅极结构32的侧壁，此外，过路栅极结构32可设置于单一扩散隔离结构26a/26b上并且不跨过单一扩散隔离结构26a/26b的侧壁，在其它的实施例中，也可以是过路栅极结构32跨过单一扩散隔离结构26a/26b的侧壁并且直接接触部分第一鳍状结构16或第二鳍状结构18的情况。第一栅极结构28、第二栅极结构30和过路栅极结构32各自包含一多晶硅栅极36和一介电层38，接着在第一栅极结构28、第二栅极结构30和过路栅极结构32两侧的第一鳍状结构16和第二鳍状结构18中形成凹槽，然后于凹槽中形成外延层40，之后在第一鳍状结构16中的外延层40注入N型掺质作为源极/漏极掺杂区42，在第二鳍状结构18中的外延层40注入P型掺质作为源极/漏极掺杂区44。根据本发明的优选实施例，也可以不用形成外延层，就直接注入N型或P型的掺质作为源极/漏极掺杂区42/44。然后形成一层间介电层46，之后可在层间介电层46中形成接触插塞电连接源极/漏极掺杂区42/44。
如图8所示，若是后续完成的晶体管需要使用金属栅极时，可在形成接触插塞之前，进行一金属栅极置换(replacement metal gate)制作工艺，将第一栅极结构28、第二栅极结构30和过路栅极结构32移除后形成数个凹槽(图未示)，接着形成栅极介电层48以及功函数层(图未示)于凹槽中，通常栅极介电层48为高介电系数的材料，此外栅极介电层48以及功函数层可视其所在是N型晶体管区或是P型晶体管区而调整其成分，之后形成金属栅极50于功函数层上，在N型晶体管区的金属栅极50、栅极介电层48以及功函数层作为一第一金属栅极结构52，第二金属栅极50、栅极介电层48以及功函数层作为一第二金属栅极结构54，由于金属栅极置换制作工艺为本领域所熟知技术，在此不另加赘述。至此即完成一互补式鳍状晶体管结构300。
如图9所示，根据本发明的第二优选实施例，在使用流动型化学气相沉积步骤形成氧化硅层20后，平坦化氧化硅层20时，是将氧化硅层20的上表面平坦化至与第一鳍状结构16的上表面切齐，后续的制作工艺步骤则接续图5至图8以完成互补式鳍状晶体管结构300，其中的详细步骤则不再赘述。如此在N型晶体管区100的单一扩散隔离结构26a的上表面，会和第一鳍状结构16的上表面切齐，如图10所示。
如图8所示，一种互补式鳍状晶体管结构300，包含一基底10，基底10划分为一N型晶体管区100和一P型晶体管区200，一N型鳍状晶体管400和一P型鳍状晶体管500分别设置于N型晶体管区100和P型晶体管区200，N型鳍状晶体管400中包含一第一鳍状结构16，二浅沟槽隔离24分别位于第一鳍状结构16的相对两侧，二单一扩散隔离结构26a分别位于第一鳍状结构16的两末端，其中各个单一扩散隔离结构26a的上表面不低于第一鳍状结构16的上表面，于图8中以单一扩散隔离结构26a的上表面高于第一鳍状结构16的上表面为例，一第一栅极结构，例如一第一金属栅极结构52横跨第一鳍状结构16，一源极/漏极掺杂区42位于第一金属栅极结构52两侧的第一鳍状结构内16；P型鳍状晶体管500包含一第二鳍状结构18，浅沟槽隔离24分别位于第二鳍状结构18的相对两侧，其中浅沟槽隔离24和第二鳍状结构18的相对位置和浅沟槽隔离24和第一鳍状结构16的相对位置相同，请参阅浅沟槽隔离24和第一鳍状结构16的相对位置即可，二单一扩散隔离结构26b分别位于第二鳍状结构18的两末端，其中单一扩散隔离结构26b的上表面低于第二鳍状结构18的上表面，一第二栅极结构54，例如一第二金属栅极结构极横跨第二鳍状结构18以及一源极/漏极掺杂区44位于金属栅极结构两侧的第二鳍状结构18内。值得注意的是N型鳍状晶体管400中的第一鳍状结构16，其两末端有高于第一鳍状结构16的上表面的单一扩散隔离结构26a，而单一扩散隔离结构26a是利用流动型化学气相沉积步骤形成氧化硅层而制作而成，因此会对第一鳍状结构16造成伸张应力，因此N型鳍状晶体管400的通道区就会具有伸张应力，进而增加电子的效能，相反的由于P型鳍状晶体管500不需要伸张应力，所以在第二鳍状结构18两末端的单一扩散隔离结构26b低于第二鳍状结构18的上表面。
根据本发明的另一优选实施例，互补式鳍状晶体管结构300的单一扩散隔离结构26a的高度可和第一鳍状结构16的上表面切齐，如图10所示，N型鳍状晶体管400中的第一鳍状结构16，其两末端有与第一鳍状结构16的上表面切齐的单一扩散隔离结构26a，此结构同样能够提供第一鳍状结构16伸张应力，其它元件都与图8相同，在此不再赘述。
以上所述仅为本发明的优选实施例，凡依本发明权利要求所做的均等变化与修饰，都应属本发明的涵盖范围。

Claims (10)

1.一种具有伸张应力的鳍状结构的制作方法，包含：
提供一基底包含一N型晶体管区和一P型晶体管区；
形成二条第一沟槽和二条第二沟槽于该基底中，该二条第一沟槽定义出一鳍状结构，该二条第二沟槽截断该二条第一沟槽；
进行一流动型化学气相沉积步骤，以形成氧化硅层填入该二条第一沟槽和该二条第二沟槽；
平坦化该氧化硅层，其中在平坦化该氧化硅层后，该氧化硅层的上表面不低于该鳍状结构的上表面；
形成一图案化掩模只位于该N型晶体管区，该图案化掩模只重叠位于该二条第二沟槽内的该氧化硅层；
以该图案化掩模为掩模，去除部分的氧化硅层直至位于N型晶体管区内的该第一沟槽中的该氧化硅层的上表面以及位于该P型晶体管区内的该氧化硅层的上表面低于该鳍状结构的上表面；以及
移除该图案化掩模。
2.如权利要求1所述的具有伸张应力的鳍状结构的制作方法，另包含：
在平坦化该氧化硅层之后以及形成该图案化掩模之前，该氧化硅层的上表面高于该鳍状结构的上表面；以及
在移除该图案化掩模后，位于N型晶体管区内的该二条第二沟槽中的该氧化硅层的上表面高于该鳍状结构的上表面。
3.如权利要求1所述的具有伸张应力的鳍状结构的制作方法，另包含：
在平坦化该氧化硅层之后以及形成该图案化掩模之前，该氧化硅层的上表面与该鳍状结构的上表面切齐；以及
其中在移除该图案化掩模之后，位于N型晶体管区内的该二条第二沟槽中的该氧化硅层的上表面与该鳍状结构的上表面切齐。
4.如权利要求1所述的具有伸张应力的鳍状结构的制作方法，其中该图案化掩模不形成在该P型晶体管区。
5.如权利要求4所述的具有伸张应力的鳍状结构的制作方法，其中在P型晶体管区内，位于该二条第二沟槽内的该氧化硅层的上表面和位于该二条第一沟槽内的该氧化硅层的上表面切齐。
6.一种互补式鳍状晶体管结构，包含：
N型鳍状晶体管，包含：
第一鳍状结构；
二个浅沟槽隔离，分别位于该第一鳍状结构的相对两侧；
二个第一单一扩散隔离结构，分别位于该第一鳍状结构的两末端，其中该二个第一单一扩散隔离结构的上表面不低于该第一鳍状结构的上表面；
第一栅极结构，横跨该第一鳍状结构；
第一源极/漏极掺杂区，位于该第一栅极结构两侧的该第一鳍状结构内；
P型鳍状晶体管，包含：
第二鳍状结构；
该二个浅沟槽隔离，分别位于该第二鳍状结构的相对两侧；
二个第二单一扩散隔离结构，分别位于该第二鳍状结构的两末端，其中该二个第二单一扩散隔离结构的上表面低于该第二鳍状结构的上表面；
第二栅极结构，横跨该第二鳍状结构；以及
第二源极/漏极掺杂区，位于该第二栅极结构两侧的该第二鳍状结构内。
7.如权利要求6所述的互补式鳍状晶体管结构，其中该二个第一单一扩散隔离结构的上表面高于该第一鳍状结构的上表面。
8.如权利要求6所述的互补式鳍状晶体管结构，其中该二个第一单一扩散隔离结构的上表面与该第一鳍状结构的上表面切齐。
9.如权利要求6所述的互补式鳍状晶体管结构，其中该二个第一单一扩散隔离结构的上表面高于该二个浅沟槽离的上表面。
10.如权利要求6所述的互补式鳍状晶体管结构，其中该第一鳍状结构的上表面和该第二鳍状结构的上表面切齐。
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