JP5288707B2 - シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法 - Google Patents

シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法 Download PDF

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JP5288707B2
JP5288707B2 JP2006507063A JP2006507063A JP5288707B2 JP 5288707 B2 JP5288707 B2 JP 5288707B2 JP 2006507063 A JP2006507063 A JP 2006507063A JP 2006507063 A JP2006507063 A JP 2006507063A JP 5288707 B2 JP5288707 B2 JP 5288707B2
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substrate
blanket layer
chamber
single crystal
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JP2006521015A (ja
JP2006521015A5 (enExample
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ピエール トマジーニ
ナイルス コディー
チャンタル アレナ
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エーエスエム アメリカ インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
JP2006507063A 2003-03-12 2004-03-11 シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法 Expired - Lifetime JP5288707B2 (ja)

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Application Number Priority Date Filing Date Title
US45486703P 2003-03-12 2003-03-12
US60/454,867 2003-03-12
PCT/US2004/007385 WO2004081986A2 (en) 2003-03-12 2004-03-11 Method to planarize and reduce defect density of silicon germanium

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JP2006521015A5 JP2006521015A5 (enExample) 2007-03-22
JP5288707B2 true JP5288707B2 (ja) 2013-09-11

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JP2011203559A Pending JP2012033944A (ja) 2003-03-12 2011-09-16 シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法

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Cited By (2)

* Cited by examiner, † Cited by third party
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US8566004B2 (en) 2008-08-08 2013-10-22 Denso Corporation Fuel injection control apparatus for internal combustion engine
DE102023205973A1 (de) * 2023-06-26 2024-06-06 Vitesco Technologies GmbH Verfahren und Anordnung zum Ermitteln der Qualität und des Füllstands einer Flüssigkeit

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JP4954448B2 (ja) * 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 有機金属化合物
JP4714422B2 (ja) * 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
JP4689969B2 (ja) * 2003-04-05 2011-06-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Ｉｖａ族およびｖｉａ族化合物の調製
KR100679737B1 (ko) * 2003-05-19 2007-02-07 도시바세라믹스가부시키가이샤 왜곡층을 가지는 실리콘기판의 제조방법
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US7560352B2 (en) 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
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US20060172068A1 (en) * 2005-01-28 2006-08-03 Ovshinsky Stanford R Deposition of multilayer structures including layers of germanium and/or germanium alloys
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JP5567569B2 (ja) 2008-08-27 2014-08-06 ソイテック 選択した格子定数または制御した格子定数を有する半導体材料の層を使用する半導体構造または半導体デバイスを製造する方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8566004B2 (en) 2008-08-08 2013-10-22 Denso Corporation Fuel injection control apparatus for internal combustion engine
DE102023205973A1 (de) * 2023-06-26 2024-06-06 Vitesco Technologies GmbH Verfahren und Anordnung zum Ermitteln der Qualität und des Füllstands einer Flüssigkeit

Also Published As

Publication number Publication date
JP2006521015A (ja) 2006-09-14
US7427556B2 (en) 2008-09-23
US20040259333A1 (en) 2004-12-23
JP2012033944A (ja) 2012-02-16
WO2004081986A3 (en) 2004-11-04
WO2004081986A2 (en) 2004-09-23

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