JP2006521015A5 - - Google Patents

Download PDF

Info

Publication number
JP2006521015A5
JP2006521015A5 JP2006507063A JP2006507063A JP2006521015A5 JP 2006521015 A5 JP2006521015 A5 JP 2006521015A5 JP 2006507063 A JP2006507063 A JP 2006507063A JP 2006507063 A JP2006507063 A JP 2006507063A JP 2006521015 A5 JP2006521015 A5 JP 2006521015A5
Authority
JP
Japan
Prior art keywords
substrate
etchant
chamber
blanket layer
sige
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006507063A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006521015A (ja
JP5288707B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2004/007385 external-priority patent/WO2004081986A2/en
Publication of JP2006521015A publication Critical patent/JP2006521015A/ja
Publication of JP2006521015A5 publication Critical patent/JP2006521015A5/ja
Application granted granted Critical
Publication of JP5288707B2 publication Critical patent/JP5288707B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2006507063A 2003-03-12 2004-03-11 シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法 Expired - Lifetime JP5288707B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US45486703P 2003-03-12 2003-03-12
US60/454,867 2003-03-12
PCT/US2004/007385 WO2004081986A2 (en) 2003-03-12 2004-03-11 Method to planarize and reduce defect density of silicon germanium

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011203559A Division JP2012033944A (ja) 2003-03-12 2011-09-16 シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法

Publications (3)

Publication Number Publication Date
JP2006521015A JP2006521015A (ja) 2006-09-14
JP2006521015A5 true JP2006521015A5 (enExample) 2007-03-22
JP5288707B2 JP5288707B2 (ja) 2013-09-11

Family

ID=32990921

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006507063A Expired - Lifetime JP5288707B2 (ja) 2003-03-12 2004-03-11 シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法
JP2011203559A Pending JP2012033944A (ja) 2003-03-12 2011-09-16 シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011203559A Pending JP2012033944A (ja) 2003-03-12 2011-09-16 シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法

Country Status (3)

Country Link
US (1) US7427556B2 (enExample)
JP (2) JP5288707B2 (enExample)
WO (1) WO2004081986A2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4954448B2 (ja) * 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 有機金属化合物
JP4689969B2 (ja) * 2003-04-05 2011-06-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Ｉｖａ族およびｖｉａ族化合物の調製
JP4714422B2 (ja) * 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
KR100679737B1 (ko) * 2003-05-19 2007-02-07 도시바세라믹스가부시키가이샤 왜곡층을 가지는 실리콘기판의 제조방법
DE102004053307B4 (de) * 2004-11-04 2010-01-07 Siltronic Ag Mehrschichtenstruktur umfassend ein Substrat und eine darauf heteroepitaktisch abgeschiedene Schicht aus Silicium und Germanium und ein Verfahren zu deren Herstellung
US7560352B2 (en) * 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7312128B2 (en) 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US20060172068A1 (en) * 2005-01-28 2006-08-03 Ovshinsky Stanford R Deposition of multilayer structures including layers of germanium and/or germanium alloys
FR2900277B1 (fr) * 2006-04-19 2008-07-11 St Microelectronics Sa Procede de formation d'une portion monocristalline a base de silicium
JP2010043531A (ja) 2008-08-08 2010-02-25 Denso Corp 内燃機関の燃料噴射制御装置
US8765508B2 (en) 2008-08-27 2014-07-01 Soitec Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters
WO2011061580A1 (en) 2009-11-18 2011-05-26 S.O.I.Tec Silicon On Insulator Technologies Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods
FR2968830B1 (fr) 2010-12-08 2014-03-21 Soitec Silicon On Insulator Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe
FR2968678B1 (fr) 2010-12-08 2015-11-20 Soitec Silicon On Insulator Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés
US9023721B2 (en) 2010-11-23 2015-05-05 Soitec Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods
JP5488675B2 (ja) * 2012-11-14 2014-05-14 ソニー株式会社 半導体装置の製造方法
US9214630B2 (en) 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
US9735062B1 (en) 2016-06-03 2017-08-15 International Business Machines Corporation Defect reduction in channel silicon germanium on patterned silicon
TW202240012A (zh) * 2021-03-05 2022-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 膜沉積系統及方法
DE102023205973A1 (de) * 2023-06-26 2024-06-06 Vitesco Technologies GmbH Verfahren und Anordnung zum Ermitteln der Qualität und des Füllstands einer Flüssigkeit

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3729645A (en) 1964-12-16 1973-04-24 Gen Electric Photoconductive camera tubes and methods of manufacture
DE1789021C3 (de) 1967-09-25 1975-04-10 Hitachi, Ltd., Tokio Zenerdiode und Verfahren zu ihrer Herstellung
US3720877A (en) 1970-09-25 1973-03-13 Ibm Metal vapor discharge tube using metal and semi-metal compounds in a discharge tube
US3737739A (en) 1971-02-22 1973-06-05 Ibm Single crystal regions in dielectric substrate
US3984718A (en) 1971-12-08 1976-10-05 Owens-Illinois, Inc. Gas discharge dielectric containing germanium or tin
US3984857A (en) 1973-06-13 1976-10-05 Harris Corporation Heteroepitaxial displays
US3985590A (en) 1973-06-13 1976-10-12 Harris Corporation Process for forming heteroepitaxial structure
US4461820A (en) 1981-02-06 1984-07-24 Canon Kabushiki Kaisha Amorphous silicon electrophotographic image-forming member having an aluminum oxide coated substrate
JPS6028826A (ja) 1983-07-26 1985-02-14 Hiroshi Suzuki かご型ゼオライト薄膜表層を有する複合膜及びその製造法
US4522662A (en) * 1983-08-12 1985-06-11 Hewlett-Packard Company CVD lateral epitaxial growth of silicon over insulators
JPS60221301A (ja) 1984-04-13 1985-11-06 Mitsui Toatsu Chem Inc 水素化ゲルマニウムの製造方法
JPH0626181B2 (ja) * 1985-06-24 1994-04-06 日本電気株式会社 半導体基板の製造方法
JPS6217004A (ja) 1985-07-12 1987-01-26 Mitsui Toatsu Chem Inc ゲルマン類の製造方法
JPS6262529A (ja) * 1985-09-12 1987-03-19 Toppan Printing Co Ltd 窒化シリコン膜の作成方法
US5366554A (en) 1986-01-14 1994-11-22 Canon Kabushiki Kaisha Device for forming a deposited film
US4868014A (en) 1986-01-14 1989-09-19 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
EP0241111B1 (en) 1986-02-05 1991-04-10 Canon Kabushiki Kaisha Light-receiving member for electrophotography
US5294285A (en) 1986-02-07 1994-03-15 Canon Kabushiki Kaisha Process for the production of functional crystalline film
JPS632891A (ja) * 1986-06-19 1988-01-07 Nec Corp 気相エピタキシヤル成長法
US4983274A (en) 1986-12-04 1991-01-08 Mobil Oil Corp. Shape selective crystalline silicate zeolite containing intermetallic component and use as catalyst in hydrocarbon conversions
US4803186A (en) 1986-12-04 1989-02-07 Mobil Oil Corporation Shape selective crystalline silicate zeolite containing intermetallic component and use as catalyst in hydrocarbon conversions
JPS63285923A (ja) 1987-05-19 1988-11-22 Komatsu Denshi Kinzoku Kk シリコン−ゲルマニウム合金の製造方法
US5037775A (en) 1988-11-30 1991-08-06 Mcnc Method for selectively depositing single elemental semiconductor material on substrates
US5112439A (en) 1988-11-30 1992-05-12 Mcnc Method for selectively depositing material on substrates
JPH03184324A (ja) * 1989-12-13 1991-08-12 Canon Inc 多結晶ＳｉＧｅ薄膜の形成方法
US5316958A (en) 1990-05-31 1994-05-31 International Business Machines Corporation Method of dopant enhancement in an epitaxial silicon layer by using germanium
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
FR2678647A1 (fr) 1991-07-05 1993-01-08 Centre Nat Rech Scient Procede de fabrication d'un cristal a gradient de maille.
JP2912059B2 (ja) * 1991-08-27 1999-06-28 山形日本電気株式会社 常圧ｃｖｄ装置
US5576247A (en) 1992-07-31 1996-11-19 Matsushita Electric Industrial Co., Ltd. Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture
US5646073A (en) 1995-01-18 1997-07-08 Lsi Logic Corporation Process for selective deposition of polysilicon over single crystal silicon substrate and resulting product
US5563428A (en) 1995-01-30 1996-10-08 Ek; Bruce A. Layered structure of a substrate, a dielectric layer and a single crystal layer
JP2953567B2 (ja) 1997-02-06 1999-09-27 日本電気株式会社 半導体装置の製造方法
US6242080B1 (en) 1997-07-09 2001-06-05 Canon Kabushiki Kaisha Zinc oxide thin film and process for producing the film
FR2783254B1 (fr) 1998-09-10 2000-11-10 France Telecom Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus
JP3986202B2 (ja) * 1999-03-25 2007-10-03 株式会社アルバック 選択成長方法
JP3324573B2 (ja) * 1999-07-19 2002-09-17 日本電気株式会社 半導体装置の製造方法および製造装置
JP2001338931A (ja) * 1999-10-14 2001-12-07 Hitachi Ltd バイポーラトランジスタおよびその製造方法
JP4700160B2 (ja) * 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
EP1399970A2 (en) * 2000-12-04 2004-03-24 Amberwave Systems Corporation Cmos inverter circuits utilizing strained silicon surface channel mosfets
JP2002237590A (ja) * 2001-02-09 2002-08-23 Univ Tohoku Ｍｏｓ型電界効果トランジスタ
JP4866534B2 (ja) 2001-02-12 2012-02-01 エーエスエム アメリカ インコーポレイテッド 半導体膜の改良された堆積方法
US7026219B2 (en) * 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US6653658B2 (en) 2001-07-05 2003-11-25 Isonics Corporation Semiconductor wafers with integrated heat spreading layer
US6646073B2 (en) 2001-07-24 2003-11-11 Eastman Chemical Company Process for the polymerization of ethylene and interpolymers thereof
JP3660897B2 (ja) 2001-09-03 2005-06-15 株式会社ルネサステクノロジ 半導体装置の製造方法
US6875279B2 (en) 2001-11-16 2005-04-05 International Business Machines Corporation Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
US20030111013A1 (en) 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US20030124818A1 (en) 2001-12-28 2003-07-03 Applied Materials, Inc. Method and apparatus for forming silicon containing films
US6723622B2 (en) 2002-02-21 2004-04-20 Intel Corporation Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer
US6451641B1 (en) 2002-02-27 2002-09-17 Advanced Micro Devices, Inc. Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material
WO2004001857A1 (en) 2002-06-19 2003-12-31 Massachusetts Institute Of Technology Ge photodetectors
US7132338B2 (en) 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process

Similar Documents

Publication Publication Date Title
JP2006521015A5 (enExample)
JP6585551B2 (ja) 半導体装置の製造方法、基板処理装置、およびプログラム
JP2012033944A (ja) シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法
TWI405248B (zh) 沉積摻雜碳之磊晶半導體層之方法、沉積半導體材料的方法與裝置及在反應腔室中之基板上形成電晶體設備之方法
KR101478331B1 (ko) 에피택셜 탄화규소 단결정 기판의 제조 방법
JP5571287B2 (ja) 化学気相成長によって置換的に炭素でドーピングされた結晶性Ｓｉ含有材料を製造する方法
US7588980B2 (en) Methods of controlling morphology during epitaxial layer formation
TWI720389B (zh) 半導體裝置之製造方法、基板處理裝置及程式
US20080017101A1 (en) Germanium Deposition
KR20090015138A (ko) 클로로폴리실란들을 이용한 실리콘-포함 막들의 선택적 증착 방법들 및 시스템들
JP2008530782A5 (enExample)
JP2009521801A5 (enExample)
KR20030076677A (ko) 트리실란을 사용한, 혼합 기판상의 증착
WO2011069370A1 (zh) 高Ge组分沟道材料层的形成方法
US20050026400A1 (en) Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxy
CN107452598A (zh) 半导体器件的制造方法、衬底处理装置及记录介质
KR20030021376A (ko) 반도체소자의 선택적 에피성장법
JP2008538161A5 (enExample)
JP2010103142A (ja) 半導体装置の製造方法
KR20180107729A (ko) 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
JP7322408B2 (ja) 炭化珪素多結晶基板、炭化珪素多結晶膜の製造方法および炭化珪素多結晶基板の製造方法
JP2016092399A (ja) 炭化ケイ素膜付き基板、炭化ケイ素膜付き基板の製造方法、及び、半導体装置
JP2667664B2 (ja) シリコン単結晶薄膜の製法
KR20240037162A (ko) 기판상에 선택적으로 실리콘 함유 에피택셜 층을 형성하는 방법
CN108573852A (zh) 具有原子级平整表面的薄膜的制备方法