JP5284957B2 - 表面の湿式化学処理を増進させる方法および装置 - Google Patents
表面の湿式化学処理を増進させる方法および装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 35
- 239000000126 substance Substances 0.000 title claims description 14
- 230000002708 enhancing effect Effects 0.000 title 1
- 238000012545 processing Methods 0.000 claims description 52
- 239000012530 fluid Substances 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 45
- 239000007921 spray Substances 0.000 claims description 44
- 238000005507 spraying Methods 0.000 claims description 17
- 238000012993 chemical processing Methods 0.000 claims description 7
- 238000007654 immersion Methods 0.000 claims description 3
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- 239000004020 conductor Substances 0.000 description 5
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- KEUKAQNPUBYCIC-UHFFFAOYSA-N ethaneperoxoic acid;hydrogen peroxide Chemical compound OO.CC(=O)OO KEUKAQNPUBYCIC-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 239000000725 suspension Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/02—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery
- B05B12/06—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery for effecting pulsating flow
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/16—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling the spray area
- B05B12/20—Masking elements, i.e. elements defining uncoated areas on an object to be coated
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B14/00—Arrangements for collecting, re-using or eliminating excess spraying material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0085—Apparatus for treatments of printed circuits with liquids not provided for in groups H05K3/02 - H05K3/46; conveyors and holding means therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/068—Apparatus for etching printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0736—Methods for applying liquids, e.g. spraying
- H05K2203/0746—Local treatment using a fluid jet, e.g. for removing or cleaning material; Providing mechanical pressure using a fluid jet
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1492—Periodical treatments, e.g. pulse plating of through-holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/15—Position of the PCB during processing
- H05K2203/1509—Horizontally held PCB
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
ドイツ特許発明第DE 199 08 960 C2号明細書の段落[0021]には、エッチング工程での各回の中断時に、付着するエッチング液による一時的な再エッチングが行われることが記載されている。再エッチングが行われる時間よりも中断時間を短くすることは、この用途には妥当でない。一般に、薄層は短いエッチング時間でエッチングすることができる。再エッチングをする場合、周期的に中断すると効果がある。
ドイツ特許出願公開第101 54 886 A1号明細書には、エッチング溝の側面でのエッチングを低減する方法が記載されている。金属材料の除去を2段階の方法で行う。第一に、パルス電界をかけることにより金属材料を電解的に除去する。このエッチングは、好ましくは側面にあまり作用を与えないよう、エッチング溝の深さ方向に行われる。エッチング溝の所定の深さに到達すると、一部の構造の電気接続が切り離される。従って、そのようなエッチング溝の底部領域は、さらなる工程で再エッチングしなければならず、さらなる技術的努力を伴う工程が要求される。
【先行技術文献】
【特許文献】
2…処理流体の吹付け噴流
3…中断手段
4…有効噴流、脈動噴流
5…被処理表面
6…部材
7…入口
8…有効流体
9…無効流体
10…吹付け装置
11…穴開きディスク
12…受け部
13…開口部
14…穴部
15…シリンダ
16…スロット
17…カラー
18…転がり軸受
19…ブリッジ
20…ダンパ
21…薄片
22…出口
23…固定点
24…捕集溝
Claims (15)
- 浸漬工場または連続処理工場において、処理流体によって被処理材料(6)の表面(5)を処理する湿式化学処理の方法において、
前記処理流体が前記被処理材料(6)へ向けて吹付け噴流(2)にして吹き付けられ、
吹付け噴流中断手段(3)の位置を所定の位置からずらすことにより前記吹付け噴流(2)が前記被処理材料(6)の前記表面(5)に衝突することを中断するようになっている
方法であって、
前記吹付け噴流(2)はノズル(1)によって生成されるものであり、
前記吹付け噴流中段手段(3)は、前記ノズル(1)と前記被処理材料(6)の前記表面(5)との間に配置されており、それにより前記吹付け噴流(2)が前記被処理材料(6)の前記表面(5)に衝突することを中断するものであり、
前記吹付け噴流中段手段(3)は、前記ノズル(1)によって生成された噴流がこの吹付け噴流中段手段(3)に衝突することによって駆動され前記のように位置をずらすものである
方法。 - 請求項1記載の方法において、
前記吹付け噴流中段手段(3)は、衝突した噴流をこの前記吹付け噴流中段手段(3)によって上記被処理材料(6)から遠ざかる方向へ案内され排出するように設定されていることを特徴とする。 - 請求項1記載の方法において、前記吹付け噴流中断手段(3)の位置のずらしは、回転、旋回、または直線運動により達成されることを特徴とするものである。
- 請求項1または3のいずれかに記載の方法において、前記被処理材料(6)への前記吹付け噴流(2)の不連続的衝突は周期的に行われ、少なくとも0.5Hzの中断周波数で達成されることを特徴とするものである。
- 請求項1または3のいずれかに記載の方法において、前記被処理材料(6)への前記吹付け噴流(2)の不連続的衝突は周期的に行われ、10Hz〜100Hzの中断周波数で達成されることを特徴とするものである。
- 請求項1〜5のいずれかに記載の方法において、前記被処理材料(6)への前記吹付け噴流(2)の不連続的衝突は、衝突パルス時間とパルス一時停止時間の比が10:1〜1:10の範囲で起こることを特徴とするものである。
- 請求項1〜5のいずれかに記載の方法において、前記被処理材料(6)への前記吹付け噴流(2)の不連続的衝突は、衝突パルス時間とパルス一時停止時間の比が2:1〜1:2の範囲で起こることを特徴とするものである。
- 請求項2記載の方法において、前記処理流体は、カラー(17)、捕集溝(24)、または吸込み装置により前記被処理材料(6)の前記表面(5)から遠ざけられることを特徴とするものである。
- 浸漬工場または連続処理工場において、処理流体によって前記被処理材料の材料(6)の表面に湿式化学処理を施すための装置において、この装置により前記処理流体が前記被処理材料(6)へ向けて噴流(2)にして吹き付けられることで、位置がずらされるように駆動される吹付け噴流中断手段(3)を少なくとも1つ有し、これにより前記吹付け噴流(2)が不連続的に前記被処理材料(6)に誘導され、前記吹付け噴流(2)が前記ノズル(1)によって生成されるものである前記湿式化学処理を施すための装置であって、
前記吹付け噴流中断手段(3)は前記ノズル(1)と前記被処理材料(6)の前記表面(5)との間に配置されるものである、ことを特徴とする装置。 - 請求項9記載の装置において、前記吹付け噴流中断手段(3)の位置のずらしは、回転、旋回、または直線運動により達成されることを特徴とするものである。
- 請求項9または10のいずれかに記載の装置において、前記吹付け噴流中断手段(3)の位置ずれは、超過圧力で流れる前記処理流体の前記吹付け噴流(2)により発生する力により達成されることを特徴とするものである。
- 請求項9〜11のいずれかに記載の装置において、前記吹付け噴流中断手段(3)は前記ノズル(1)と前記被処理材料(6)との間に配置され、前記吹付け噴流中断手段(3)は回転可能または旋回可能なシリンダ(15)として形成されることを特徴とするものである。
- 請求項9〜12のいずれかに記載の装置において、前記吹付け噴流中断手段(3)は振動要素として形成されることを特徴とするものである。
- 請求項9〜13のいずれかに記載の装置において、前記吹付け噴流中断手段(3)は被処理表面と平行に延在する捕集溝(24)を有し、この捕集溝(24)は前記吹付け噴流(2)のうち不要な部分を捕集するのに適しているように構成されていることを特徴とするものである。
- 請求項9〜14のいずれかに記載の装置において、この装置は、排出される前記処理流体の吸込み装置を有することを特徴とするものである。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006035523 | 2006-07-25 | ||
DE102006035523.7 | 2006-07-25 | ||
DE102006059046A DE102006059046B4 (de) | 2006-07-25 | 2006-12-14 | Vorrichtung zum beschleunigten nasschemischen Behandeln von Oberflächen |
DE102006059046.5 | 2006-12-14 | ||
PCT/DE2007/001306 WO2008011870A1 (de) | 2006-07-25 | 2007-07-21 | Verfahren und vorrichtung zum beschleunigten nasschemischen behandeln von oberflächen |
Publications (3)
Publication Number | Publication Date |
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JP2009544845A JP2009544845A (ja) | 2009-12-17 |
JP2009544845A5 JP2009544845A5 (ja) | 2011-09-22 |
JP5284957B2 true JP5284957B2 (ja) | 2013-09-11 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009521103A Expired - Fee Related JP5284957B2 (ja) | 2006-07-25 | 2007-07-21 | 表面の湿式化学処理を増進させる方法および装置 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20090179006A1 (ja) |
JP (1) | JP5284957B2 (ja) |
KR (1) | KR101096326B1 (ja) |
CN (1) | CN101573474B (ja) |
DE (2) | DE202006018111U1 (ja) |
ES (1) | ES2341700B1 (ja) |
GB (1) | GB2453482B (ja) |
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Families Citing this family (4)
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DE102013101629A1 (de) | 2013-02-19 | 2014-08-21 | Wolfgang DAMBACHER | Vorrichtung und Verfahren zur Oberflächenbehandlung von Werkstücken |
CN104815777A (zh) * | 2015-04-28 | 2015-08-05 | 苏州杰东纺织新材料科技有限公司 | 一种电气石负载纳米TiO2复合织物的复合装置 |
CN205393066U (zh) * | 2016-03-07 | 2016-07-27 | 成都京东方光电科技有限公司 | 喷淋设备 |
DE102016112797B3 (de) * | 2016-07-12 | 2017-12-21 | Eisenmann Se | Vorrichtung und Verfahren zum Maskieren von Befestigungsbohrungen in Felgen |
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GB1468961A (en) * | 1973-09-04 | 1977-03-30 | Teledyne Ind | Spray nozzle |
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JPS6166938A (ja) * | 1984-09-10 | 1986-04-05 | Bridgestone Corp | 押付け力測定方法 |
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JPH01142091A (ja) * | 1987-11-30 | 1989-06-02 | Hitachi Ltd | エッチング方法および装置 |
JPH01297162A (ja) * | 1988-05-25 | 1989-11-30 | Noritz Corp | 多機能シャワーヘッド |
DE3923405A1 (de) * | 1989-07-14 | 1991-01-24 | Wacker Chemitronic | Vorrichtung zum transportieren und positionieren von scheibenfoermigen werkstuecken, insbesondere halbleiterscheiben, und verfahren zur nasschemischen oberflaechenbehandlung derselben |
JPH0598552A (ja) * | 1991-10-03 | 1993-04-20 | Mitsubishi Rayon Co Ltd | 不織布の製法 |
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DE4416747A1 (de) * | 1994-05-12 | 1995-11-16 | Schmid Gmbh & Co Geb | Vorrichtung zum Behandeln von Gegenständen mit Flüssigkeit in Naßprozessen |
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US20090179006A1 (en) | 2009-07-16 |
GB2453482A (en) | 2009-04-08 |
ZA200901269B (en) | 2010-03-31 |
TW200821051A (en) | 2008-05-16 |
GB2453482B (en) | 2011-08-17 |
KR20090040448A (ko) | 2009-04-24 |
DE102006059046A1 (de) | 2008-01-31 |
CN101573474B (zh) | 2013-03-27 |
DE102006059046B4 (de) | 2011-12-29 |
GB0901297D0 (en) | 2009-03-11 |
TWI331056B (en) | 2010-10-01 |
CN101573474A (zh) | 2009-11-04 |
DE202006018111U1 (de) | 2007-02-08 |
KR101096326B1 (ko) | 2011-12-20 |
JP2009544845A (ja) | 2009-12-17 |
ES2341700A1 (es) | 2010-06-24 |
ES2341700B1 (es) | 2011-08-18 |
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