JP5273482B2 - 半導体処理のための方法 - Google Patents

半導体処理のための方法 Download PDF

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JP5273482B2
JP5273482B2 JP2009526632A JP2009526632A JP5273482B2 JP 5273482 B2 JP5273482 B2 JP 5273482B2 JP 2009526632 A JP2009526632 A JP 2009526632A JP 2009526632 A JP2009526632 A JP 2009526632A JP 5273482 B2 JP5273482 B2 JP 5273482B2
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layer
etching
excited species
opening
plasma excited
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JP2010503207A (ja
JP2010503207A5 (enExample
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キールバウチ，マーク
テイラー，テッド
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マイクロン テクノロジー， インク．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009526632A 2006-08-31 2007-08-20 半導体処理のための方法 Active JP5273482B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/515,435 US7517804B2 (en) 2006-08-31 2006-08-31 Selective etch chemistries for forming high aspect ratio features and associated structures
US11/515,435 2006-08-31
PCT/US2007/018398 WO2008027240A2 (en) 2006-08-31 2007-08-20 Selective etch chemistries for forming high aspect ratio features and associated structures

Publications (3)

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JP2010503207A JP2010503207A (ja) 2010-01-28
JP2010503207A5 JP2010503207A5 (enExample) 2012-02-16
JP5273482B2 true JP5273482B2 (ja) 2013-08-28

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JP2009526632A Active JP5273482B2 (ja) 2006-08-31 2007-08-20 半導体処理のための方法

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US (3) US7517804B2 (enExample)
EP (1) EP2057669A2 (enExample)
JP (1) JP5273482B2 (enExample)
KR (1) KR101377866B1 (enExample)
CN (1) CN101501824B (enExample)
TW (1) TWI380362B (enExample)
WO (1) WO2008027240A2 (enExample)

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KR101377866B1 (ko) 2014-03-24
US7517804B2 (en) 2009-04-14
CN101501824B (zh) 2012-02-01
KR20090058005A (ko) 2009-06-08
TW200823993A (en) 2008-06-01
WO2008027240A3 (en) 2008-05-15
US20080057724A1 (en) 2008-03-06
US20090159560A1 (en) 2009-06-25
JP2010503207A (ja) 2010-01-28
TWI380362B (en) 2012-12-21
WO2008027240A2 (en) 2008-03-06
CN101501824A (zh) 2009-08-05
US8088691B2 (en) 2012-01-03
US20120068366A1 (en) 2012-03-22

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