JP4972594B2 - エッチング方法及び半導体デバイスの製造方法 - Google Patents
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- 238000005530 etching Methods 0.000 title claims description 103
- 238000000034 method Methods 0.000 title claims description 51
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000007789 gas Substances 0.000 claims description 141
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 84
- 229920005591 polysilicon Polymers 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 54
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 22
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 11
- 229910001882 dioxygen Inorganic materials 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 8
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 4
- 150000001768 cations Chemical class 0.000 description 18
- 230000005540 biological transmission Effects 0.000 description 13
- 239000000460 chlorine Substances 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- -1 Oxygen cations Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
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Description
また、請求項6記載の半導体デバイスの製造方法は、請求項5記載の製造方法において、前記マイクロ波はラジアルラインスロットアンテナにより前記プラズマを発生させるための空間へ放射されることを特徴とする。
まず、図4のウエハWを準備し、該ウエハWを基板処理装置10の処理容器11に搬入し、処理ガスG1としてCl2ガス及びArガスを処理空間S2に供給し、処理空間S1,S2の圧力を2.5Paに設定し、ラジアルラインスロットアンテナ19に2.45GHzのマイクロ波を供給すると共に、サセプタ12に13.56MHzの高周波電力を供給して自然酸化膜41を、ポリシリコン膜37がトレンチ40の底部に露出するまでエッチングした。さらに、処理空間S2へ処理ガスG1としてO2ガス、HBrガス及びArガスを供給し、処理空間S1,S2の圧力を13.3Paに設定し、HBrガス等から発生したプラズマによって残留ポリシリコン膜をエッチングした。このとき、残留ポリシリコン膜が完全に除去される一方、ゲート酸化膜36が殆どエッチングされていないことが確認された。
まず、実施例と同じ条件で自然酸化膜41を、ポリシリコン膜37がトレンチ40の底部に露出するまでエッチングした。さらに、処理空間S2へ処理ガスG1としてO2ガス、HBrガス及びArガスを供給し、処理空間S1,S2の圧力を13.3Paに設定し、サセプタ12に400KHzの高周波電力を供給してHBrガス等から発生したプラズマによって残留ポリシリコン膜をエッチングした。そして、残留ポリシリコン膜が完全に除去されることによって露出したゲート酸化膜36を除去した。その後、ウエハWのゲートを観察したところ、シリコン基材35に深さが5.05nmのリセス41が発生しているのが確認された(図6(B)参照。)。
S1,S2 処理空間
W ウエハ
10 基板処理装置
11 処理容器
12 サセプタ
13 マイクロ波透過窓
14 リング部材
19 ラジアルラインスロットアンテナ
20 スロット板
21 アンテナ誘電体板
22 遅波板
24 同軸導波管
25a,25b スロット
28 処理ガス供給部
33 高周波電源
35 シリコン基材
36 ゲート酸化膜
37 ポリシリコン膜
39 開口部
40 トレンチ
41 自然酸化膜
Claims (6)
- シリコン基材上に少なくともシリコン酸化膜、ポリシリコン膜及び開口部を有するマスク膜がこの順序で形成された基板のエッチング方法であって、
前記開口部に対応する前記ポリシリコン膜を、酸素ガス、臭化水素ガス及び不活性ガスの混合ガスからなる処理ガスをスロットから放射されるマイクロ波により励起して発生させたプラズマを用いてエッチングするポリシリコン膜エッチングステップを有し、
前記ポリシリコン膜エッチングステップでは、雰囲気の圧力を13.3Pa〜26.6Paに設定し、且つ、前記基板へ前記プラズマを引き込むためのバイアス電圧の周波数を13.56MHz以上に設定して前記開口部に対応するポリシリコン膜をエッチングすることを特徴とするエッチング方法。 - 前記ポリシリコン膜エッチングステップに先立って前記ポリシリコン膜から生成された自然酸化膜を除去する自然酸化膜除去ステップを有し、
該自然酸化膜除去ステップでは、臭化水素ガス、フルオロカーボンガス又は塩素ガスから発生したプラズマを用いて前記自然酸化膜をエッチングすることを特徴とする請求項1記載のエッチング方法。 - 前記シリコン酸化膜をエッチングするシリコン酸化膜エッチングステップを有することを特徴とする請求項1又は2記載のエッチング方法。
- 前記マイクロ波はラジアルラインスロットアンテナにより前記プラズマを発生させるための空間へ放射されることを特徴とする請求項1乃至3のいずれか1項に記載のエッチング方法。
- シリコン基材上に少なくともシリコン酸化膜、ポリシリコン膜及び開口部を有するマスク膜がこの順序で形成された基板から半導体デバイスを製造する半導体デバイスの製造方法であって、
前記開口部に対応する前記ポリシリコン膜を、酸素ガス、臭化水素ガス及び不活性ガスの混合ガスからなる処理ガスをスロットから放射されるマイクロ波により励起して発生させたプラズマを用いてエッチングするポリシリコン膜エッチングステップを有し、
前記ポリシリコン膜エッチングステップでは、雰囲気の圧力を13.3Pa〜26.6Paに設定し、且つ、前記基板へ前記プラズマを引き込むためのバイアス電圧の周波数を13.56MHz以上に設定して前記開口部に対応するポリシリコン膜をエッチングすることを特徴とする製造方法。 - 前記マイクロ波はラジアルラインスロットアンテナにより前記プラズマを発生させるための空間へ放射されることを特徴とする請求項5記載の製造方法。
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JP2008080875A JP4972594B2 (ja) | 2008-03-26 | 2008-03-26 | エッチング方法及び半導体デバイスの製造方法 |
TW098107951A TWI455205B (zh) | 2008-03-26 | 2009-03-12 | Etching method and manufacturing method of semiconductor element |
KR1020090024881A KR101110238B1 (ko) | 2008-03-26 | 2009-03-24 | 에칭 방법 및 반도체 디바이스의 제조 방법 |
US12/410,504 US20090246965A1 (en) | 2008-03-26 | 2009-03-25 | Etching method and manufacturing method of semiconductor device |
CN200910130006XA CN101546709B (zh) | 2008-03-26 | 2009-03-26 | 蚀刻方法以及半导体器件的制造方法 |
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US7446050B2 (en) * | 2003-08-04 | 2008-11-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching and plasma treatment process to improve a gate profile |
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JP4256763B2 (ja) * | 2003-11-19 | 2009-04-22 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
ITMI20042206A1 (it) * | 2004-11-17 | 2005-02-17 | St Microelectronics Srl | Procedimento per la definizione di cirfuiti integrati di dispositivi elettronici a semicondutture |
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CN101148765B (zh) * | 2006-09-19 | 2010-05-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 硅片蚀刻方法 |
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KR20090102668A (ko) | 2009-09-30 |
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CN101546709A (zh) | 2009-09-30 |
US20090246965A1 (en) | 2009-10-01 |
JP2009238889A (ja) | 2009-10-15 |
KR101110238B1 (ko) | 2012-03-14 |
CN101546709B (zh) | 2011-04-06 |
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