JP5072531B2 - プラズマエッチング方法及び記憶媒体 - Google Patents
プラズマエッチング方法及び記憶媒体 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 86
- 238000001020 plasma etching Methods 0.000 title claims description 53
- 239000010410 layer Substances 0.000 claims description 95
- 238000005530 etching Methods 0.000 claims description 80
- 239000011229 interlayer Substances 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 53
- 239000010949 copper Substances 0.000 claims description 30
- 229910052802 copper Inorganic materials 0.000 claims description 28
- 239000007795 chemical reaction product Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 239000007789 gas Substances 0.000 description 160
- 235000012431 wafers Nutrition 0.000 description 31
- 239000004065 semiconductor Substances 0.000 description 30
- 230000006870 function Effects 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000000354 decomposition reaction Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 150000002222 fluorine compounds Chemical class 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
また、請求項5記載のプラズマエッチング方法は、請求項1又は2記載のプラズマエッチング方法において、前記エッチング工程において、前記溝が、前記金属含有膜と前記層間絶縁膜とを貫通するまでエッチングされることにより、ビアホール又はトレンチが形成されることを特徴とする。
(1)トレンチ46の底部における低誘電率層間絶縁膜41のエッチングにおいて、CwFxが分解されてCが大量に飛散する。一方、ビアホール47の底部に露出した銅配線43がスパッタされてCuが飛散し、さらに、メタルハードマスク45がスパッタされてTiも飛散する。
(2)大量に飛散したCと、Cu又はTiとが結合して反応生成物が大量に生成され、ビアホール47やトレンチ46の底部や側面に残渣48として付着する。
(3)一方、多孔性SiO2膜等では、低誘電率層間絶縁膜がエッチングされてもCが大量に飛散することがなく、せいぜいSiに起因する反応生成物が発生するのみである。また、Siに起因する反応生成物はFのプラズマによってSiO2膜とほぼ同じエッチレート(SiO2膜に対するSiに起因する反応生成物の選択比はほぼ1である)でエッチングされるが、CF4ガスからは大量にFのプラズマが発生するので、Siに起因する反応生成物は殆ど除去され、その結果、ビアホールやトレンチの底部や側面に残渣が付着しない。
まず、本発明者は、半導体デバイス40が形成されたウエハWを準備し、基板処理装置10によって半導体デバイス40に図4のエッチングストップ層除去処理を施した。その後、トレンチ46やビアホール47の底部及び側面を観察したところ、残渣48が付着していないことを確認した。
次に、本発明者は、実施例と同様に、半導体デバイス40が形成されたウエハWを準備し、基板処理装置10によって半導体デバイス40にエッチングストップ層除去処理を施した。このときに施されたエッチングストップ層除去処理の条件は、処理ガスとしてCF4ガス及びN2ガスの流量が等しい混合ガスを用いた以外、図4の処理の条件と同じであった。その後、トレンチ46やビアホール47の底部及び側面を観察したところ、残渣48が付着していることを確認した。
40,50 半導体デバイス
41,51 低誘電率層間絶縁膜
42 エッチングストップ層
43 銅配線
45,52 メタルハードマスク
46,53 トレンチ
47 ビアホール
48 残渣
Claims (7)
- 溝が形成され、CwFx(x、wは所定の自然数)からなる層間絶縁膜と、金属層又は金属含有層とが形成された基板に対して、処理ガスから生じたプラズマを晒すプラズマエッチング方法であって、
前記処理ガスはCyFz(y、zは所定の自然数)ガス及びN2ガスを含む混合ガスであり、
前記処理ガスから生じたプラズマにより前記溝に沿って前記層間絶縁膜をエッチングするエッチング工程と、
前記エッチング工程において前記金属層又は前記金属含有層が前記プラズマに晒されることにより前記溝の底部又は側面に生成した反応生成物を、前記処理ガスから生じたプラズマにより除去する除去工程と、を有し、
前記処理ガスにおける前記N2ガスの流量は前記CyFzガスの流量よりも大きいことを特徴とするプラズマエッチング方法。 - 前記処理ガスにおける前記CyFzガス及び前記N2ガスの流量比は下記式(1)
CyFzガス:N2ガス = 1:X、但し、X≧7 … (1)
で示されることを特徴とする請求項1記載のプラズマエッチング方法。 - 前記金属層は銅からなり、該金属層は前記層間絶縁膜の下に形成されたエッチングストップ層によって覆われることを特徴とする請求項1又は2記載のプラズマエッチング方法。
- 前記エッチングストップ層はSiC層又はSiCN層であることを特徴とする請求項3記載のプラズマエッチング方法。
- 前記金属含有層は前記層間絶縁膜の上に所定のパターンで形成されるハードマスクであることを特徴とする請求項1又は2記載のプラズマエッチング方法。
- 前記エッチング工程において、前記溝が、前記金属含有膜と前記層間絶縁膜とを貫通するまでエッチングされることにより、ビアホール又はトレンチが形成されることを特徴とする請求項1又は2に記載のプラズマエッチング方法。
- 溝が形成され、CwFx(x、wは所定の自然数)からなる層間絶縁膜と、金属層又は金属含有層とが形成された基板に対して、処理ガスから生じたプラズマを晒すプラズマエッチング方法を基板処理装置に実行させるために、前記基板処理装置を制御するコンピュータで実行されるプログラム、を格納するコンピュータで読み取り可能な記憶媒体であって、
前記プラズマエッチング方法は、
前記処理ガスとして、CyFz(y、zは所定の自然数)ガス及びN2ガスを含む混合ガスを用い、前記処理ガスから生じたプラズマにより前記溝に沿って前記層間絶縁膜をエッチングするエッチング工程と、
前記エッチング工程において前記金属層又は前記金属含有層が前記プラズマに晒されることにより前記溝の底部又は側面に生成した反応生成物を、前記処理ガスから生じたプラズマにより除去する除去工程と、を有し、
前記処理ガスにおける前記N2ガスの流量は前記CyFzガスの流量よりも大きいことを特徴とする記憶媒体。
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JP2007276500A JP5072531B2 (ja) | 2007-10-24 | 2007-10-24 | プラズマエッチング方法及び記憶媒体 |
US12/254,943 US9384999B2 (en) | 2007-10-24 | 2008-10-21 | Plasma etching method and storage medium |
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JP2007276500A JP5072531B2 (ja) | 2007-10-24 | 2007-10-24 | プラズマエッチング方法及び記憶媒体 |
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JP5072531B2 true JP5072531B2 (ja) | 2012-11-14 |
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JP5671253B2 (ja) * | 2010-05-07 | 2015-02-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9478428B2 (en) | 2010-10-05 | 2016-10-25 | Skyworks Solutions, Inc. | Apparatus and methods for shielding a plasma etcher electrode |
US20120083129A1 (en) * | 2010-10-05 | 2012-04-05 | Skyworks Solutions, Inc. | Apparatus and methods for focusing plasma |
GB201217712D0 (en) * | 2012-10-03 | 2012-11-14 | Spts Technologies Ltd | methods of plasma etching |
US20230395385A1 (en) * | 2022-06-06 | 2023-12-07 | Tokyo Electron Limited | Plasma etching tools and systems |
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US5849639A (en) * | 1997-11-26 | 1998-12-15 | Lucent Technologies Inc. | Method for removing etching residues and contaminants |
JP2000183040A (ja) * | 1998-12-15 | 2000-06-30 | Canon Inc | 有機層間絶縁膜エッチング後のレジストアッシング方法 |
JP3330554B2 (ja) * | 1999-01-27 | 2002-09-30 | 松下電器産業株式会社 | エッチング方法 |
JP2002110644A (ja) | 2000-09-28 | 2002-04-12 | Nec Corp | エッチング方法 |
KR100532446B1 (ko) * | 2003-07-10 | 2005-11-30 | 삼성전자주식회사 | 반도체 소자의 금속배선층 형성방법 |
US20040209468A1 (en) * | 2003-04-17 | 2004-10-21 | Applied Materials Inc. | Method for fabricating a gate structure of a field effect transistor |
JP2004363558A (ja) * | 2003-05-13 | 2004-12-24 | Toshiba Corp | 半導体装置の製造方法およびプラズマエッチング装置のクリーニング方法 |
JP2005005697A (ja) * | 2003-05-21 | 2005-01-06 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
US7125792B2 (en) * | 2003-10-14 | 2006-10-24 | Infineon Technologies Ag | Dual damascene structure and method |
JP4672456B2 (ja) * | 2004-06-21 | 2011-04-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4492947B2 (ja) * | 2004-07-23 | 2010-06-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP4965830B2 (ja) * | 2005-08-12 | 2012-07-04 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
WO2009047588A1 (en) * | 2007-10-09 | 2009-04-16 | Freescale Semiconductor, Inc. | Method for manufacturing a semiconductor device and semiconductor device obtainable with such a method |
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US20090111275A1 (en) | 2009-04-30 |
US9384999B2 (en) | 2016-07-05 |
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