JP2013506986A - 半導体デバイス、半導体デバイスの製造方法および半導体デバイスの製造装置 - Google Patents
半導体デバイス、半導体デバイスの製造方法および半導体デバイスの製造装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000001301 oxygen Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims description 55
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 40
- 125000006850 spacer group Chemical group 0.000 claims description 25
- 238000012545 processing Methods 0.000 abstract description 16
- 239000007789 gas Substances 0.000 description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 39
- 238000005530 etching Methods 0.000 description 39
- 230000003647 oxidation Effects 0.000 description 24
- 238000007254 oxidation reaction Methods 0.000 description 24
- 230000005284 excitation Effects 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000004020 conductor Substances 0.000 description 12
- 239000003507 refrigerant Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 11
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000010453 quartz Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- -1 Phosphorus ions Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- Drying Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Plasma Technology (AREA)
Abstract
【課題】RLSAにおける高密度プラズマを実現し、処理速度の上昇を可能とする。
【解決手段】ゲート電極を基板表面にゲート絶縁膜を介して形成し、絶縁膜をゲート絶縁膜の側面に形成し、基板表面を酸素プラズマで曝す工程を含む半導体デバイスの製造方法である。酸素プラズマの基板表面近傍の電子温度が約1.5eV以下となることを特徴とする。
【選択図】 図1C
Description
203・・・ゲート電極
204・・・オフセットスペーサー
208・・・延長部
210・・・堆積物
212・・・表面
220・・・酸化ケイ素
Claims (15)
- 基板の表面にゲート絶縁膜を介したゲート電極を形成し、
前記ゲート電極の側面に絶縁膜を形成し、
前記基板表面を酸素プラズマに曝し、当該酸素プラズマの前記基板表面近傍の電子温度が約1.5eV以下であることを特徴とする半導体デバイスの製造方法。 - 前記絶縁膜は、オフセットスペーサであることを特徴とする請求項1に記載の半導体デバイスの製造方法。
- 前記オフセットスペーサ上にサイドウォールスペーサが形成されることを特徴とする請求項2に記載の半導体デバイスの製造方法。
- 前記絶縁膜は、サイドウォールスペーサであることを特徴とする請求項1に記載の半導体デバイスの製造方法。
- 前記酸素プラズマは、ラジアルラインスロットアンテナを用いたマイクロ表面波プラズマによって生成することを特徴とする請求項1に記載の半導体デバイスの製造方法。
- 前記酸素プラズマは、100mtorr以上で励起されることを特徴とする請求項1に記載の半導体デバイスの製造方法。
- 少なくとも1つのオフセットスペーサとサイドウォールスペーサがプロセスチャンバー内に形成され、酸素プラズマは当該プロセスチャンバー内で励起されることを特徴とする請求項1に記載の半導体デバイスの製造方法。
- 前記酸素プラズマは、シリコンからなる基板表面に励起されることを特徴とする請求項1に記載の半導体デバイスの製造方法。
- 前記酸素プラズマの電子温度は、前記基板表面から約20mm離れたところで、約1.0eVから1.5eVであることを特徴とする請求項1に記載の半導体デバイスの製造方法。
- 前記酸素プラズマの電子温度は、さらに約1.0eVから1.2eVであることを特徴とする請求項9に記載の半導体デバイスの製造方法。
- 前記基板は、サセプター上に形成され、当該温度が酸素プラズマ励起時に約20度から30度であることを特徴とする請求項1に記載の半導体デバイスの製造方法。
- 前記プラズマを生成するためのマイクロ波出力が、約2000Wから3000Wであることを特徴とする請求項1に記載の半導体デバイスの製造方法。
- ソース領域とドレイン領域を有する半導体基板と、
前記半導体基板の表面にゲート絶縁膜を介して形成されたゲート電極と、
前記ゲート電極の側面に形成された絶縁膜と、
前記ソース領域とドレイン領域の表面に実質的に酸化されていない領域を有することを特徴とする半導体デバイス。 - 前記領域の酸化されている部分の厚さが、約1nmよりも薄いことを特徴とする請求項13に記載の半導体デバイスの製造方法。
- ゲート電極を基板表面上にゲート絶縁膜を介して形成するユニットと、
ゲート電極の側面に絶縁膜を形成するユニットと、
前記基板表面を酸素プラズマに曝し、当該酸素プラズマの前記基板表面近傍の電子温度が約1.5eV以下とするユニットを有することを特徴とする半導体デバイスの製造装置。
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US12/573,138 | 2009-10-04 | ||
US12/573,138 US8497196B2 (en) | 2009-10-04 | 2009-10-04 | Semiconductor device, method for fabricating the same and apparatus for fabricating the same |
PCT/JP2010/005926 WO2011040047A1 (en) | 2009-10-04 | 2010-10-02 | Semiconductor device, method for fabricating the same and apparatus for fabricating the same |
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JP2013506986A true JP2013506986A (ja) | 2013-02-28 |
JP2013506986A5 JP2013506986A5 (ja) | 2013-10-10 |
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KR (2) | KR20120049399A (ja) |
CN (1) | CN102549756B (ja) |
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CN102549756A (zh) | 2012-07-04 |
CN102549756B (zh) | 2015-03-04 |
KR20140016433A (ko) | 2014-02-07 |
US20110079826A1 (en) | 2011-04-07 |
JP5442871B2 (ja) | 2014-03-12 |
TWI423336B (zh) | 2014-01-11 |
TW201131654A (en) | 2011-09-16 |
US8497196B2 (en) | 2013-07-30 |
WO2011040047A1 (en) | 2011-04-07 |
KR101384590B1 (ko) | 2014-04-11 |
KR20120049399A (ko) | 2012-05-16 |
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