CN102417156B - 一种刻蚀金属钼材料的方法 - Google Patents
一种刻蚀金属钼材料的方法 Download PDFInfo
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- CN102417156B CN102417156B CN201110362349.6A CN201110362349A CN102417156B CN 102417156 B CN102417156 B CN 102417156B CN 201110362349 A CN201110362349 A CN 201110362349A CN 102417156 B CN102417156 B CN 102417156B
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CN102417156A CN102417156A (zh) | 2012-04-18 |
CN102417156B true CN102417156B (zh) | 2015-02-04 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102653391B (zh) * | 2012-04-19 | 2015-02-25 | 苏州含光微纳科技有限公司 | 一种金属微小结构的加工方法 |
CN103924241B (zh) * | 2014-04-14 | 2017-01-18 | 北京工业大学 | 一种大规模制备低表面应力的表面具备微纳结构的钨的方法 |
CN105470193A (zh) * | 2014-09-09 | 2016-04-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 金属钼材料的刻蚀方法 |
CN106158512A (zh) * | 2015-04-08 | 2016-11-23 | 北京大学 | 一种金属钼基微继电器及其制备方法 |
CN107706106A (zh) * | 2017-09-21 | 2018-02-16 | 信利(惠州)智能显示有限公司 | Amoled显示面板的制备方法 |
CN108511600A (zh) * | 2018-02-28 | 2018-09-07 | 云南中烟工业有限责任公司 | 一种声致雾化芯片的制备方法 |
KR102109884B1 (ko) * | 2018-05-17 | 2020-05-12 | 삼성전기주식회사 | 체적 음향 공진기 및 이의 제조방법 |
WO2023107492A1 (en) * | 2021-12-08 | 2023-06-15 | Tokyo Electron Limited | Methods for etching molybdenum |
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KR20020088461A (ko) * | 2001-05-17 | 2002-11-29 | 주식회사 현대 디스플레이 테크놀로지 | 몰리브덴/알루미늄/몰리브덴 3층막 구조를 갖는 전극의식각방법 |
CN1855399A (zh) * | 2005-04-28 | 2006-11-01 | 株式会社半导体能源研究所 | 半导体器件和制造半导体器件的方法 |
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CN101546709A (zh) * | 2008-03-26 | 2009-09-30 | 东京毅力科创株式会社 | 蚀刻方法以及半导体器件的制造方法 |
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US7316961B2 (en) * | 2004-11-16 | 2008-01-08 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor device |
US20100000684A1 (en) * | 2008-07-03 | 2010-01-07 | Jong Yong Choi | Dry etching apparatus |
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Patent Citations (6)
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KR20020088461A (ko) * | 2001-05-17 | 2002-11-29 | 주식회사 현대 디스플레이 테크놀로지 | 몰리브덴/알루미늄/몰리브덴 3층막 구조를 갖는 전극의식각방법 |
CN101036420A (zh) * | 2004-10-07 | 2007-09-12 | 东京毅力科创株式会社 | 微波等离子体处理装置 |
CN1855399A (zh) * | 2005-04-28 | 2006-11-01 | 株式会社半导体能源研究所 | 半导体器件和制造半导体器件的方法 |
CN1959942A (zh) * | 2005-10-31 | 2007-05-09 | 中华映管股份有限公司 | 薄膜晶体管的制作方法 |
CN101046626A (zh) * | 2006-03-30 | 2007-10-03 | 应用材料股份有限公司 | 一种在制造光掩模时蚀刻钼层的方法 |
CN101546709A (zh) * | 2008-03-26 | 2009-09-30 | 东京毅力科创株式会社 | 蚀刻方法以及半导体器件的制造方法 |
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