CN101501824B - 用于形成高纵横比特征和相关联结构的选择性蚀刻化学 - Google Patents

用于形成高纵横比特征和相关联结构的选择性蚀刻化学 Download PDF

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CN101501824B
CN101501824B CN2007800288924A CN200780028892A CN101501824B CN 101501824 B CN101501824 B CN 101501824B CN 2007800288924 A CN2007800288924 A CN 2007800288924A CN 200780028892 A CN200780028892 A CN 200780028892A CN 101501824 B CN101501824 B CN 101501824B
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plasma
species
silicon
carbon
dielectric layer
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CN101501824A (zh
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马克·基尔鲍赫
特德·泰勒
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Micron Technology Inc
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Micron Technology Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2007800288924A 2006-08-31 2007-08-20 用于形成高纵横比特征和相关联结构的选择性蚀刻化学 Active CN101501824B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/515,435 US7517804B2 (en) 2006-08-31 2006-08-31 Selective etch chemistries for forming high aspect ratio features and associated structures
US11/515,435 2006-08-31
PCT/US2007/018398 WO2008027240A2 (en) 2006-08-31 2007-08-20 Selective etch chemistries for forming high aspect ratio features and associated structures

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CN101501824A CN101501824A (zh) 2009-08-05
CN101501824B true CN101501824B (zh) 2012-02-01

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US (3) US7517804B2 (enExample)
EP (1) EP2057669A2 (enExample)
JP (1) JP5273482B2 (enExample)
KR (1) KR101377866B1 (enExample)
CN (1) CN101501824B (enExample)
TW (1) TWI380362B (enExample)
WO (1) WO2008027240A2 (enExample)

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US7517804B2 (en) 2009-04-14
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US20080057724A1 (en) 2008-03-06
US20090159560A1 (en) 2009-06-25
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TWI380362B (en) 2012-12-21
WO2008027240A2 (en) 2008-03-06
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US8088691B2 (en) 2012-01-03
US20120068366A1 (en) 2012-03-22

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