JP5258556B2 - 半導体ウェハの裏面研削に用いる表面保護テープ及び該表面保護テープ用基材フィルム - Google Patents
半導体ウェハの裏面研削に用いる表面保護テープ及び該表面保護テープ用基材フィルム Download PDFInfo
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- JP5258556B2 JP5258556B2 JP2008509833A JP2008509833A JP5258556B2 JP 5258556 B2 JP5258556 B2 JP 5258556B2 JP 2008509833 A JP2008509833 A JP 2008509833A JP 2008509833 A JP2008509833 A JP 2008509833A JP 5258556 B2 JP5258556 B2 JP 5258556B2
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- film
- ldpe
- semiconductor wafer
- base film
- protective tape
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Classifications
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C—CHEMISTRY; METALLURGY
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C09J2423/046—Presence of homo or copolymers of ethene in the substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
(1)JIS B0601に準拠して測定した、該基材フィルムの表裏両面の表面粗さ(Ra)が0.8μm以下であり、少なくとも一方の面の表面粗さ(Ra)が0.05μm以上であり、及び
(2)該基材フィルムの厚みの最大値と最小値と差が4μm以下である。
(1)JIS B0601に準拠して測定した、該基材フィルムの表裏両面の表面粗さRaが0.8μm以下であり、少なくとも一方の面の表面粗さRaが0.05μm以上であり、及び(2)該基材フィルムの厚みの最大値と最小値と差が4μm以下である、
ポリエチレン系樹脂を含む層を少なくとも1層有するフィルムを押出成形して成形物とした後、該成形物を表面粗さ(Rz)が0.8〜10μmの範囲の金属ロール及び/又は金属無端ベルトで挟圧することを特徴とする製造方法。
2 金属ロール
3 金属ロール
[フィルムの表面粗さ(Ra:算術平均粗さ)]
得られた表面保護テープ用基材フィルムについて、JIS B0610に準拠し、東京精密株式会社製サーフコム570Aを用いて、カットオフ0.8mm、測定端子の駆動速度0.3mm/秒、測定長さ2.5mmで測定した。
[金属ロールの表面粗さ(Rz:十点平均粗さ)]
金属ロールの表面粗さは、JIS B0610に準拠して測定されたものである。
[厚み精度]
得られた表面保護テープ用基材フィルムについて、400mm×400mmの大きさの試料を、任意の位置から無作為に10枚抽出し、1枚について縦横10mm間隔で計1600箇所の厚みを尾崎製作所製デジタルリニアゲージD−10HSを用いて測定した。同様の測定を残りの9枚についても行い、計16000点の測定値を得、その中の最大値と最小値の差を計算によって求めた。
分岐状低密度ポリエチレン(宇部丸善株式会社製 F522N:密度0.922g/cm3、MFR=5、添加剤無添加)を230℃に設定された押出機に投入し溶融させた後、230℃のTダイスから厚さ約120μmの板状に押出し、表面温度が30℃であり表面粗さRzが1.2μmの金属ロールと、表面温度が20℃であり表面粗さRzが3.8μmの金属無端ベルトで挟圧しながら冷却固化させ引き取った後、巻き取り機で巻き取って厚さ120μmの単層フィルムを得た(図1を参照)。得られたフィルムから採取した試料を用いて、表面粗さ、厚み精度及びショアD型硬度を測定した。結果は表1に示した。
原料としてエチレン−メタクリル酸メチル共重合体(住友化学株式会社製 WD206:密度0.94g/cm3、MFR=2、メタクリル酸メチル含量20重量%、添加剤無添加)を使用した以外は実施例1と同様の条件でフィルムを得た。得られたフィルムから採取した試料を用いて、表面粗さおよび厚み精度を測定した。結果は表1に示した。
原料としてエチレン−酢酸ビニル共重合体(東ソー株式会社製 ウルトラセン541:密度0.929g/cm3、MFR=9)を使用した以外は実施例1と同様の条件でフィルムを得た。得られたフィルムから採取した試料を用いて、表面粗さおよび厚み精度を測定した。結果は表1に示した。
原料として分岐状低密度ポリエチレン(宇部丸善株式会社製 F522N:密度0.922g/cm3、MFR=5、添加剤無添加)をA層とし、エチレン−メタクリル酸メチル共重合体(住友化学株式会社製 WD203−1(密度0.92g/cm3、MFR=2、メタクリル酸メチル含量5重量%、酸化防止剤1000ppm)をB層となるよう、それぞれの押出機に投入し、3層(B/A/B)構成で各層の厚みが20μm/80μm/20μmとなるようにした以外は実施例1と同様の条件でフィルムを得た。得られたフィルムから採取した試料を用いて、表面粗さおよび厚み精度を測定した。結果は表1に示した。
原料として分岐状低密度ポリエチレン(宇部丸善株式会社製 F522N:密度0.922g/cm3、MFR=5、添加剤無添加)をA層とし、分岐状低密度ポリエチレン(宇部丸善株式会社製 Z372:密度0.934g/cm3、MFR=5)をB層となるように、それぞれの押出機に投入し、3層(B/A/B)構成で各層の厚みが20μm/80μm/20μmとなるようにした以外は実施例1と同様の条件でフィルムを得た。得られたフィルムから採取した試料を用いて、表面粗さおよび厚み精度を測定した。結果
は表1に示した。
原料として分岐状低密度ポリエチレン(宇部丸善株式会社製 F522N:密度0.922g/cm3、MFR=5、添加剤無添加)をA層とし、エチレン−酢酸ビニル共重合体(東ソー株式会社製 ウルトラセン541:密度0.929g/cm3、MFR=9)をB層となるように、それぞれの押出機に投入し、3層(B/A/B)構成で各層の厚みが20μm/80μm/20μmとなるようにした以外は実施例1と同様の条件でフィルムを得た。得られたフィルムから採取した試料を用いて、表面粗さおよび厚み精度を測定した。結果は表1に示した。
挟圧、冷却固化に用いたロールが、表面粗さRzが1.2μmの金属ロール1と表面が鏡面の金属無端ベルト用いた以外は実施例1と同様の条件でフィルムを得た。得られたフィルムから採取した試料を用いて、表面粗さおよび厚み精度を測定した。結果は表1に示した。
原料としてエチレン−メタクリル酸共重合体(三井デュポンポリケミカル株式会社製 ニュクレルAN4214C:密度0.93g/cm3、MFR=7、メタクリル酸含量4重量%)を用いた以外は実施例1と同様の条件でフィルムを得た。得られたフィルムは、金属ロールと金属無端ベルトによる挟圧によってもフィルム内に押し込めないほど大きなフィッシュアイがあり、その部分の厚みが厚くなっていた。得られたフィルムから採取した試料を用いて、表面粗さおよび厚み精度を測定した。結果は表1に示した。
原料としてエチレン−アクリル酸エチル共重合体(三井デュポンポリケミカル株式会社製エバフレックス−EEA A701:密度0.92g/cm3、MFR=5、アクリル酸エチル含量9重量%)を用いた以外は実施例1と同様の条件でフィルムを得た。得られたフィルムは、金属ロールと金属無端ベルトによる挟圧によってもフィルム内に押し込めないほど大きなフィッシュアイがあり、その部分の厚みが厚くなっていた。得られたフィルムから採取した試料を用いて、表面粗さおよび厚み精度を測定した。結果は表1に示した。
挟圧、冷却固化に用いたロールが、表面が鏡面の金属ロール1と表面が鏡面の金属無端ベルト用いた以外は実施例1と同様の条件で成形を行ったが、フィルムと金属ロールとの剥離性が悪いため、安定して成形することが困難であった。得られたフィルムも裏表両面の表面粗さが小さく、滑性の悪いフィルムでありハンドリング性に劣るものとなった。得られたフィルムから採取した試料を用いて、表面粗さおよび厚み精度を測定した。結果は表1に示した。
裏面研削評価
実施例および比較例で得られたフィルムに粘着剤を塗布し、粘着テープとした後、シリコンミラーウェハ(直径8インチ、厚み700μm)の表面に、ヒューグルエレクトロニクス社製テープ貼付装置(Model3250)を使用し貼り付けた。次いでディスコ社製グラインド装置(DFG−810)にて、厚みが150μmになるまで研削し、ウェハの破損やクラックの有無を確認した。目視にて、破損やクラックが確認できない場合を「○」、確認できる場合を「×」とした。
Claims (8)
- 半導体ウェハのバックグラインド工程で使用される表面保護テープ用基材フィルムであって、ポリエチレン系樹脂を含む3層を有し、下記要件を満たすことを特徴とする基材フィルム:
基材フィルムが、分岐状低密度ポリエチレン(LDPE)/LDPE/LDPEの3層フィルム、エチレン−メタクリル酸メチル共重合体(EMMA)/LDPE/EMMAの3層フィルム、若しくはエチレン−酢酸ビニル共重合体(EVA)/LDPE/EVAの3層フィルムであり、
(1)JIS B0601に準拠して測定した、該基材フィルムの表裏両面の表面粗さRaが0.8μm以下であり、少なくとも一方の面の表面粗さRaが0.05μm以上であり、及び
(2)該基材フィルムの厚みの最大値と最小値の差が3μm以下である。 - LDPE/LDPE/LDPEの3層フィルムであって、表裏層の樹脂密度が中間層のそれよりも高い請求項1に記載の半導体ウェハのバックグラインド工程で使用される表面保護テープ用基材フィルム。
- EMMA/LDPE/EMMAの3層フィルムである請求項1に記載の半導体ウェハのバックグラインド工程で使用される表面保護テープ用基材フィルム。
- EVA/LDPE/EVAの3層フィルムである請求項1に記載の半導体ウェハのバックグラインド工程で使用される表面保護テープ用基材フィルム。
- 総厚みが50〜250μmの範囲である請求項1〜4のいずれかに記載の半導体ウェハのバックグラインド工程で使用される表面保護テープ用基材フィルム。
- ポリエチレン系樹脂を含む3層を有し、下記要件を満たすことを特徴とする半導体ウェハのバックグラインド工程で使用される表面保護テープ用基材フィルムの製造方法であって、
基材フィルムが、分岐状低密度ポリエチレン(LDPE)/LDPE/LDPEの3層フィルム、エチレン−メタクリル酸メチル共重合体(EMMA)/LDPE/EMMAの3層フィルム、若しくはエチレン−酢酸ビニル共重合体(EVA)/LDPE/EVAの3層フィルムであり、
(1)JIS B0601に準拠して測定した、該基材フィルムの表裏両面の表面粗さRaが0.8μm以下であり、少なくとも一方の面の表面粗さRaが0.05μm以上であり、及び(2)該基材フィルムの厚みの最大値と最小値の差が3μm以下である、
ポリエチレン系樹脂を含む層を少なくとも1層有するフィルムを押出成形して成形物とした後、該成形物を表面粗さ(Rz)が0.8〜10μmの範囲の金属ロール及び/又は金属無端ベルトで挟圧することを特徴とする製造方法。 - 請求項1〜5のいずれかに記載の半導体ウェハのバックグラインド工程で使用される表面保護テープ用基材フィルムに、粘着剤層及び離型フィルムを設けてなる半導体ウェハの表面保護テープ。
- 請求項7に記載の半導体ウェハのバックグラインド工程で使用される表面保護テープから離型フィルムを剥離して、半導体ウェハの表面に貼着した後、該表面保護テープの裏面を研削することを特徴とする半導体ウェハのバックグラインド方法。
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Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5178726B2 (ja) | 2007-08-30 | 2013-04-10 | 電気化学工業株式会社 | 粘着シート及び電子部品の製造方法 |
WO2009096261A1 (ja) * | 2008-02-01 | 2009-08-06 | Sumitomo Chemical Company, Limited | 光拡散性積層樹脂フィルムおよびその製造方法、ならびに防眩フィルム、防眩性偏光板および画像表示装置 |
JP5383069B2 (ja) * | 2008-03-25 | 2014-01-08 | グンゼ株式会社 | バックグラインドフィルム及びその製造方法 |
JP5328192B2 (ja) * | 2008-03-25 | 2013-10-30 | グンゼ株式会社 | バックグラインドフィルム及びその製造方法 |
JP5383070B2 (ja) * | 2008-03-25 | 2014-01-08 | グンゼ株式会社 | バックグラインドフィルム及びその製造方法 |
KR101114358B1 (ko) * | 2008-04-21 | 2012-03-14 | 주식회사 엘지화학 | 점착 필름 및 이를 사용한 백라인딩 방법 |
JP6176432B2 (ja) * | 2008-04-21 | 2017-08-09 | エルジー・ケム・リミテッド | 粘着フィルム及びこれを使用したバックグラインディング方法 |
JP5441457B2 (ja) * | 2009-03-19 | 2014-03-12 | グンゼ株式会社 | バックグラインドフィルム及びその製造方法 |
JP5441459B2 (ja) * | 2009-03-19 | 2014-03-12 | グンゼ株式会社 | バックグラインドフィルム及びその製造方法 |
JP2011054934A (ja) * | 2009-08-04 | 2011-03-17 | Nitto Denko Corp | 半導体加工用シート |
JP5483713B2 (ja) * | 2010-05-12 | 2014-05-07 | 日東電工株式会社 | 表面保護フィルム |
JP2013172039A (ja) * | 2012-02-21 | 2013-09-02 | Furukawa Electric Co Ltd:The | 半導体ウエハ表面保護用粘着テープおよび半導体ウエハの加工方法 |
JP5764600B2 (ja) * | 2012-03-22 | 2015-08-19 | 古河電気工業株式会社 | 半導体ウェハの裏面研削加工用表面保護粘着テープおよび半導体ウェハの加工方法 |
JP2013239502A (ja) * | 2012-05-14 | 2013-11-28 | Gunze Ltd | ダイシング用基体フィルム |
KR101354781B1 (ko) * | 2012-06-11 | 2014-01-23 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스의 제조 방법 |
KR101896710B1 (ko) * | 2012-08-29 | 2018-09-10 | 동우 화인켐 주식회사 | 레이저 다이싱용 웨이퍼 보호막 조성물 |
WO2014050658A1 (ja) * | 2012-09-25 | 2014-04-03 | 住友ベークライト株式会社 | ダイシングフィルム |
TWI624372B (zh) * | 2015-02-13 | 2018-05-21 | Yan Tian Fu | Polyethylene tape (2) |
SG11201807869SA (en) * | 2016-03-31 | 2018-10-30 | Mitsui Chemicals Tohcello Inc | Film for component manufacture and component manufacturing method |
US11276600B2 (en) | 2016-03-31 | 2022-03-15 | Mitsui Chemicals Tohcello, Inc. | Film for component manufacture and component manufacturing method |
JP6928850B2 (ja) * | 2016-08-29 | 2021-09-01 | 古河電気工業株式会社 | マスク一体型表面保護テープ |
CN109825215A (zh) * | 2017-11-23 | 2019-05-31 | 上海海优威新材料股份有限公司 | 用于晶圆研磨的多层复合膜及其制备方法 |
WO2020196794A1 (ja) * | 2019-03-27 | 2020-10-01 | 三井化学東セロ株式会社 | 保護フィルム及びその貼着方法並びに半導体部品の製造方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07148824A (ja) * | 1993-11-29 | 1995-06-13 | Japan Steel Works Ltd:The | 薄物シート成形用ポリシングスタンド |
JPH0931425A (ja) * | 1995-07-18 | 1997-02-04 | Lintec Corp | ウェハ加工用粘着シートおよびその製造方法 |
JPH09186121A (ja) * | 1995-12-28 | 1997-07-15 | Mitsui Toatsu Chem Inc | 半導体ウエハの裏面研削方法 |
JP2002069396A (ja) * | 2000-08-29 | 2002-03-08 | Mitsui Chemicals Inc | 半導体ウエハ保護用粘着フィルム及びそれを用いる半導体ウエハの裏面加工方法 |
JP2003221564A (ja) * | 2002-02-01 | 2003-08-08 | Gunze Ltd | 半導体ウエハ固定用粘着テープ基材フィルム |
JP2003309088A (ja) * | 2002-04-15 | 2003-10-31 | Nitto Denko Corp | 半導体ウエハ加工用保護シート及び該シートの使用方法 |
WO2004090962A1 (ja) * | 2003-04-08 | 2004-10-21 | Teijin Dupont Films Japan Limited | 半導体ウェハ加工用ベースフィルム |
JP2005239889A (ja) * | 2004-02-26 | 2005-09-08 | Nitto Denko Corp | ロール状ウエハ加工用粘着シート |
JP2007280976A (ja) * | 2006-04-03 | 2007-10-25 | Gunze Ltd | 半導体ウェハの裏面研削に用いる表面保護テープ用基材フィルム |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0616524B2 (ja) | 1984-03-12 | 1994-03-02 | 日東電工株式会社 | 半導体ウエハ固定用接着薄板 |
JPS60223139A (ja) | 1984-04-18 | 1985-11-07 | Nitto Electric Ind Co Ltd | 半導体ウエハ固定用接着薄板 |
JPH05211234A (ja) | 1991-12-05 | 1993-08-20 | Lintec Corp | ウェハ貼着用粘着シートおよびウェハダイシング方法 |
JP3193104B2 (ja) * | 1992-02-25 | 2001-07-30 | 東レ合成フィルム株式会社 | 表面保護フイルム |
JPH08330257A (ja) * | 1995-05-29 | 1996-12-13 | Mitsui Toatsu Chem Inc | 半導体ウエハ裏面研削用フィルムの製造方法 |
JPH1116863A (ja) * | 1997-06-25 | 1999-01-22 | Mitsui Chem Inc | 半導体ウエハの裏面研削方法及び該方法に用いる粘着フィルム |
US5844677A (en) * | 1997-12-04 | 1998-12-01 | Agr International, Inc. | Apparatus and associated method for inspecting containers for bulges |
JP4005218B2 (ja) | 1998-06-02 | 2007-11-07 | 三井化学株式会社 | 半導体ウエハ表面保護用粘着テープの使用方法 |
JP4054113B2 (ja) | 1998-06-25 | 2008-02-27 | 三井化学株式会社 | 半導体ウエハの裏面研削用粘着フィルム及びそれを用いる半導体ウエハの裏面研削方法 |
DE69914418T2 (de) * | 1998-08-10 | 2004-12-02 | Lintec Corp. | Dicing tape und Verfahren zum Zerteilen einer Halbleiterscheibe |
JP3634673B2 (ja) * | 1999-07-02 | 2005-03-30 | グンゼ株式会社 | ポリオレフィン系フィルム |
JP4689075B2 (ja) * | 2001-05-21 | 2011-05-25 | 日東電工株式会社 | 半導体ウエハ加工用保護シート |
JP2003249471A (ja) * | 2002-02-22 | 2003-09-05 | Nitto Denko Corp | 半導体ウエハ加工用保護シート |
JP2004014691A (ja) * | 2002-06-05 | 2004-01-15 | Mitsubishi Gas Chem Co Inc | 薄葉化ウェーハの製造法 |
JP2005236082A (ja) * | 2004-02-20 | 2005-09-02 | Nitto Denko Corp | レーザーダイシング用粘着シート及びその製造方法 |
JP2006022193A (ja) * | 2004-07-07 | 2006-01-26 | Sekisui Film Kk | 粘着テープ基材及び粘着テープ |
KR20090061996A (ko) * | 2007-12-12 | 2009-06-17 | 삼성전자주식회사 | 칩 뒷면 보호 필름, 그 제조 방법 및 이를 이용한 반도체패키지의 제조 방법 |
-
2007
- 2007-03-30 TW TW096111340A patent/TW200800584A/zh unknown
- 2007-04-02 US US12/282,597 patent/US20090068929A1/en not_active Abandoned
- 2007-04-02 CN CN2007800118552A patent/CN101416282B/zh active Active
- 2007-04-02 JP JP2008509833A patent/JP5258556B2/ja active Active
- 2007-04-02 KR KR1020087021639A patent/KR101494682B1/ko active IP Right Grant
- 2007-04-02 WO PCT/JP2007/057396 patent/WO2007116856A1/ja active Search and Examination
- 2007-04-02 MY MYPI20083866A patent/MY153422A/en unknown
- 2007-04-02 EP EP07740832.6A patent/EP2003685B1/en active Active
-
2013
- 2013-01-11 JP JP2013003821A patent/JP5586710B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07148824A (ja) * | 1993-11-29 | 1995-06-13 | Japan Steel Works Ltd:The | 薄物シート成形用ポリシングスタンド |
JPH0931425A (ja) * | 1995-07-18 | 1997-02-04 | Lintec Corp | ウェハ加工用粘着シートおよびその製造方法 |
JPH09186121A (ja) * | 1995-12-28 | 1997-07-15 | Mitsui Toatsu Chem Inc | 半導体ウエハの裏面研削方法 |
JP2002069396A (ja) * | 2000-08-29 | 2002-03-08 | Mitsui Chemicals Inc | 半導体ウエハ保護用粘着フィルム及びそれを用いる半導体ウエハの裏面加工方法 |
JP2003221564A (ja) * | 2002-02-01 | 2003-08-08 | Gunze Ltd | 半導体ウエハ固定用粘着テープ基材フィルム |
JP2003309088A (ja) * | 2002-04-15 | 2003-10-31 | Nitto Denko Corp | 半導体ウエハ加工用保護シート及び該シートの使用方法 |
WO2004090962A1 (ja) * | 2003-04-08 | 2004-10-21 | Teijin Dupont Films Japan Limited | 半導体ウェハ加工用ベースフィルム |
JP2005239889A (ja) * | 2004-02-26 | 2005-09-08 | Nitto Denko Corp | ロール状ウエハ加工用粘着シート |
JP2007280976A (ja) * | 2006-04-03 | 2007-10-25 | Gunze Ltd | 半導体ウェハの裏面研削に用いる表面保護テープ用基材フィルム |
Also Published As
Publication number | Publication date |
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JP2013102195A (ja) | 2013-05-23 |
CN101416282A (zh) | 2009-04-22 |
EP2003685A9 (en) | 2009-05-06 |
EP2003685B1 (en) | 2015-03-18 |
MY153422A (en) | 2015-02-13 |
US20090068929A1 (en) | 2009-03-12 |
TW200800584A (en) | 2008-01-01 |
EP2003685A4 (en) | 2014-01-15 |
WO2007116856A1 (ja) | 2007-10-18 |
KR101494682B1 (ko) | 2015-02-23 |
JPWO2007116856A1 (ja) | 2009-08-20 |
CN101416282B (zh) | 2010-06-09 |
EP2003685A2 (en) | 2008-12-17 |
JP5586710B2 (ja) | 2014-09-10 |
KR20080114715A (ko) | 2008-12-31 |
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