WO2014050658A1 - ダイシングフィルム - Google Patents
ダイシングフィルム Download PDFInfo
- Publication number
- WO2014050658A1 WO2014050658A1 PCT/JP2013/075135 JP2013075135W WO2014050658A1 WO 2014050658 A1 WO2014050658 A1 WO 2014050658A1 JP 2013075135 W JP2013075135 W JP 2013075135W WO 2014050658 A1 WO2014050658 A1 WO 2014050658A1
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- WIPO (PCT)
- Prior art keywords
- dicing
- dicing film
- base material
- film
- material layer
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2421/00—Presence of unspecified rubber
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2483/00—Presence of polysiloxane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Definitions
- the present invention relates to a dicing film.
- a dicing film is used when cutting a semiconductor member such as a semiconductor wafer or a package.
- the dicing film is used for attaching a semiconductor member, dicing (cutting, dividing into pieces), expanding the dicing film, and picking up the semiconductor wafer.
- a dicing film is composed of a base film and an adhesive layer.
- a polyvinyl chloride (PVC) resin film has been often used as a base film.
- PVC resin films from the prevention of contamination of semiconductor members due to the adhesion of plasticizers contained in PVC resin films and the growing awareness of environmental issues, recently, such as olefin resins, ethylene vinyl alcohol resins and ethylene methacrylate acrylate resins, etc.
- a base film using a non-PVC resin-based material has been developed (see, for example, Patent Document 1).
- the dicing film is expanded in order to widen the gap between the semiconductor members.
- the base material does not have sufficient toughness, the dicing film may break when expanded. . Therefore, there is a need for a dicing film that can suppress substrate whiskers during dicing and that does not break during expansion.
- An object of the present invention is to provide a dicing film that generates less chips and substrate whiskers in a dicing process during semiconductor manufacturing and has a suitable expandability.
- the pressure-sensitive adhesive layer contains one or more of rubber-based, silicone-based, and acrylic pressure-sensitive adhesives.
- a dicing film that has less generation of chips and substrate whiskers in a dicing process during semiconductor manufacturing and that has suitable expandability.
- the dicing film 10 includes a base material layer 1 and an adhesive layer 2 as illustrated in FIG.
- the base material layer 1 is used to stabilize the wafer during conveyance, to cut into the lower layer of the pressure-sensitive adhesive layer during dicing, and to increase the chip interval after dicing.
- the base material layer 1 has a breaking elongation at 80 ° C. of 750% or less.
- the contact portion with the dicing blade is exposed to a high temperature of 80 ° C. or more due to frictional heat with the dicing blade in the dicing process. In such a high temperature state, the base material layer becomes soft and easily stretched, and the chips are pulled by the rotation of the dicing blade and are elongated, which is one cause of the generation of the base whiskers in the dicing process.
- the base material layer 1 of the present invention has a breaking elongation at 80 ° C. of 750% or less, it is difficult to be soft and easily stretched at a high temperature, so that generation of whiskers in the dicing process is suppressed. It is something that can be done.
- the breaking elongation at 80 ° C. of the base material layer 1 is not particularly limited as long as it is 750% or less, but is preferably 600% or less, and more preferably 400% or less.
- the base material layer 1 preferably has a breaking elongation at 23 ° C. of 50% or more.
- the base material layer 1 is hardly broken at the time of expansion because the base material layer 1 has a breaking elongation of 50% or more at 23 ° C. near the normal temperature at which the expanding step is performed. It becomes.
- the breaking elongation at 23 ° C. of the base material layer 1 is not particularly limited as long as it is 50% or more, but is preferably 100% or more, and more preferably 200% or more. Thereby, the fracture
- the base material layer 1 preferably has a low elongation at break even at a temperature exceeding 80 ° C.
- the degree is preferably 600% or less, and more preferably 400% or less.
- resin which comprises the base material layer 1 For example, a low density polyethylene, a polystyrene, a polystyrene, and rubber
- the thickness of the base material layer 1 is not particularly limited, but is preferably 50 to 250 ⁇ m, more preferably 70 to 200 ⁇ m, and still more preferably 80 to 150 ⁇ m. When the thickness of the base material layer 1 is equal to or greater than the lower limit value, the base material layer 1 is more difficult to break during expansion, and when the thickness of the base material layer 1 is equal to or less than the upper limit value, Can be further suppressed.
- the base material layer 1 can add various resin, an additive, etc. according to the objective in the range which does not impair the effect of this invention.
- a polymer type antistatic agent such as a polyether / polyolefin block polymer or a polyether ester amide block polymer, carbon black or the like can be added.
- an ion conductive antistatic agent using a polyether / polyolefin copolymer is preferable from the viewpoint of compatibility with the olefin resin.
- an adhesive layer 2 is provided on at least one surface of the base material layer 1 of the dicing film 10 according to the present invention.
- the adhesive layer 2 has a role of holding the adherend on the dicing film 10.
- the resin composition used for the adhesive layer 2 include a rubber adhesive, a silicone adhesive, an acrylic adhesive, a UV curable urethane acrylate resin, and an isocyanate crosslinking agent.
- a rubber-based adhesive in order to suppress the semiconductor member mount, end material jumping, and chipping, it is preferable to include any one or more of a rubber-based adhesive, a silicone-based adhesive, and an acrylic-based adhesive.
- the acrylic pressure-sensitive adhesive preferably has a polar group, and examples of the acrylic pressure-sensitive adhesive having a polar group include carboxyl group-containing butyl acrylate.
- the adhesive layer 2 contains an acrylic adhesive having a polar group, the mounting of the semiconductor member, the jumping of the end material, and the suppression of chipping become particularly suitable.
- the thickness of the adhesion layer 2 is not specifically limited, It is preferable that they are 3 micrometers or more and 40 micrometers or less, and it is preferable that they are 5 micrometers or more and 20 micrometers or less for the semiconductor wafer dicing of a dicing film. Further, for dicing special members such as packages, it is preferably 10 ⁇ m or more and 30 ⁇ m or less. By setting it to the range lower limit value or more, the holding power of the adherend is excellent, and by setting it to the range upper limit value or less, the workability during dicing is excellent.
- the combination of the resin that constitutes the base layer 1 and the resin that constitutes the adhesive layer 2 is not particularly limited.
- the resin that constitutes the base layer 1 is low-density polyethylene, polystyrene, and rubber.
- the adhesive layer 2 is a mixture of a rubber or an elastomer
- the resin constituting the adhesive layer 2 is preferably a rubber adhesive, a silicone adhesive, an acrylic adhesive, a UV curable urethane acrylate resin, an isocyanate crosslinking agent, or the like.
- a rubber-based adhesive e.g., a silicone-based adhesive, and an acrylic-based adhesive
- an acrylic-based adhesive having a polar group is further included.
- generation of whiskers during dicing can be further suppressed, and suppression of mounting of semiconductor members, jumping of end materials, and chipping can be further improved.
- the resin used as the adhesive layer 2 is appropriately dissolved or dispersed in a solvent with respect to the base material layer 1 or the resin film including the base material layer 1 to form a coating solution. It is formed by applying and drying by a known coating method such as roll coating or gravure coating.
- the dicing film 10 according to the present invention can be provided with other resin layers depending on the purpose within a range not impairing the effects of the present invention.
- Example 1 ⁇ Production of dicing tape>
- Low density polyethylene F522N manufactured by Ube Maruzen Polyethylene
- a copolymer (weight average molecular weight) obtained by copolymerizing 30 parts by weight of 2-ethylhexyl acrylate, 70 parts by weight of vinyl acetate and 3 parts by weight of 2-hydroxyethyl methacrylate. was 300,000).
- urethane acrylate having a weight average molecular weight of 5,000 and a polymerizable functional group of 4 was prepared.
- a photopolymerization initiator for the adhesive layer 3% by weight of 2,2-dimethoxy-1,2-diphenylethane-1-one (trade name “Irgacure 651”) was prepared.
- an isocyanate-based crosslinking agent for the adhesive layer 8% by weight of a polyisocyanate compound (trade name “Coronate L”) was prepared.
- the base polymer of the above adhesive layer, the curing component, the photopolymerization initiator, the cross-linking agent, and twice the total amount of ethyl acetate were mixed to prepare a resin solution.
- This resin solution was bar-coated on the substrate so that the thickness of the pressure-sensitive adhesive layer after drying was 10 ⁇ m, and then dried at 80 ° C. for 1 minute to obtain a desired dicing tape.
- Example 2 As materials constituting the HIPS / elastomer mixed base material, a styrene-methyl methacrylate-butyl acrylate copolymer and 60 phr of a styrene-butadiene copolymer SX100 (manufactured by PS Japan Co., Ltd.) After dry blending with 7125 40 phr (manufactured by Kuraray Co., Ltd.), a dicing tape was obtained in the same manner as in Example 1 except that a sheet having a thickness of 150 ⁇ m was obtained.
- Example 3 As a laminated substrate of LDPE / HDPE, a low density polyethylene F522N (made by Ube Maruzen polyethylene) layer (50 ⁇ thickness) and a high density polyethylene resin Suntec B161 (made by Asahi Kasei Co., Ltd.) layer (50 ⁇ thickness) are laminated.
- a dicing tape was obtained in the same manner as in Example 1 except that a 100- ⁇ sheet was used.
- Example 4 A dicing tape was obtained in the same manner as in Example 1 except that 100 parts by weight of a styrene-butadiene copolymer SX100 (manufactured by PS Japan Co., Ltd.) was used as a material constituting the substrate.
- a styrene-butadiene copolymer SX100 manufactured by PS Japan Co., Ltd.
- Example 1 A dicing tape was obtained in the same manner as in Example 1 except that 100 parts by weight of ionomer resin Himiran 1855 (manufactured by Mitsui DuPont) obtained by crosslinking a carboxyl group-containing compound with a cation was used as a material constituting the substrate.
- ionomer resin Himiran 1855 manufactured by Mitsui DuPont
- Example 2 A dicing tape was obtained in the same manner as in Example 1 except that 100 parts by weight of high-density polyethylene resin Suntec B161 (manufactured by Asahi Kasei Co., Ltd.) was used as the material constituting the substrate.
- Suntec B161 manufactured by Asahi Kasei Co., Ltd.
- Example 3 A dicing tape was obtained in the same manner as in Example 1 except that 100 parts by weight of a linear low density polyethylene resin Moatech 0248Z (manufactured by Prime Polymer Co., Ltd.) was used as the material constituting the substrate. Next, the obtained dicing tape was evaluated as follows. The obtained evaluation results are shown in Table 1. ⁇ Evaluation test> (1) Tensile test (1-1) The tensile elongation at 23 ° C. was measured by the following method. Plastic-tensile property test method JISK7127 compliant. (1-2) Tensile elongation at 80 ° C. was measured by the following method.
- a strip having a width of 6 mm and a length of 50 mm was prepared, pulled at 200 mm / min in the MD direction until it was broken, and the elongation at break was determined.
- (2) Evaluation of substrate scrap after dicing A wafer (thickness 0.1 mm) that has been back-grinded (DAG810 manufactured by DISCO Corporation) is attached to the prepared dicing tape, and after dicing under the following conditions, the chip is removed. The surface of the tape was observed, and the number of substrate scraps having a length of 100 ⁇ m or more coming out from the cut line was counted. ⁇ : 0 to 5 ⁇ : 6-10 ⁇ : 11 or more
- Chip spacing is 50 ⁇ m or more open ⁇ : Chip spacing is 30 ⁇ m or more and less than 50 ⁇ m ⁇ : Chip spacing is not opened 30 ⁇ m or more
- the dicing film of the present invention has less generation of chips and substrate whiskers during dicing and has a suitable strength and good appearance as a dicing film, it is suitably used as a film for fixing a semiconductor member in a dicing process of manufacturing a semiconductor device. be able to.
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- Computer Hardware Design (AREA)
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Abstract
Description
(1)基材層と粘着層とを有するダイシングフィルムであって、
前記基材層の80℃における破断伸度が750%以下であることを特徴とするダイシングフィルム。
(2)前記基材層の23℃における破断伸度が50%以上である上記(1)に記載のダイシングフィルム。
(3)前記基材層の厚みが、50~250μmである上記(1)または(2)に記載のダイシングフィルム。
(4)前記粘着層が、ゴム系、シリコーン系、アクリル系粘着剤のいずれか1つ以上を含むものである上記(1)ないし(3)に記載のダイシングフィルム。
(5)前記アクリル系粘着剤が極性基を有するものである上記(1)ないし(4)いずれかに記載のダイシングフィルム。
(6)前記粘着層の厚みが、3~40μmである上記(1)ないし(5)いずれかに記載のダイシングフィルム。
基材層1は、ウエハの搬送時に安定させるため、並びにダイシング時に粘着剤層の下層まで切り込みを入れるため、またダイシング後のチップ間隔を広げるためのものである。
基材層1は、80℃における破断伸度が750%以下である。
ここで、ダイシングフィルムは、ダイシング工程において、ダイシングブレードとの摩擦熱により、ダイシングブレードとの接触部は、80℃以上の高温に晒される。このような高温状態においては、基材層が柔らかく伸びやすい状態となり、切り屑がダイシングブレードの回転に引っ張られ伸長することがダイシング工程で基材ヒゲが発生する一因である。
この点、本発明の基材層1は、80℃における破断伸度が750%以下であることにより、高温状態において柔らかく伸びやすい状態にはなりにくいために、ダイシング工程におけるヒゲの発生を抑制することができるものである。
基材層1の80℃における破断伸度は、750%以下であれば特に限定されないが、600%以下であることが好ましく、400%以下であることがより好ましい。
ダイシングフィルムは、基材に十分な靭性がないと、エキスパンド時に基材層が破断するといった問題が発生する場合がある。これに対して本発明のダイシングフィルムでは、エキスパンド工程が行われる常温付近の23℃における基材層1の破断伸度が50%以上であることにより、エキスパンド時に基材層1が破断し難いものとなる。
基材層1の23℃における破断伸度は、50%以上であれば特に限定されないが、100%以上であることが好ましく、200%以上であることがより好ましい。
これにより、エキスパンド時のダイシングフィルム10の破断を十分に防止することができる。
これにより、ダイシング工程おける基材ヒゲの発生をさらに抑制することができる。
なかでも、低密度ポリエチレンやポリスチレンとゴムやエラストマーの混合物が好ましい。
基材層1を構成する樹脂が、低密度ポリエチレンやポリスチレンとゴムやエラストマーの混合物であることにより、基材層1の23℃おける破断伸度を上記下限値以上とすることが容易となり、良好なエキスパンド性を発揮することができる。
また、基材層1の80℃および100℃における破断伸度を上記上限値以下とすることが容易となり、ダイシング時のヒゲの発生をより抑制することができる。
基材層1の厚みが前記下限値以上であることにより、エキスパンド時に基材層1がより破断しにくいものとなり、基材層1の厚みが前記上限値以下であることにより、ダイシング時のヒゲの発生をより抑制することができる。
図1に例示するように本発明に係るダイシングフィルム10の基材層1の少なくとも片面には、粘着層2が設けられる。粘着層2は、ダイシングフィルム10に被着体を保持する役割を有する。
粘着層2に用いられる樹脂組成物としては、ゴム系粘着剤、シリコーン系粘着剤、アクリル系粘着剤、UV硬化性ウレタンアクリレート樹脂、イソシアネート系架橋剤等があげられる。これらの中でも半導体部材マウント、端材飛び及びチッピングを抑制するためには、ゴム系粘着剤、シリコーン系粘着剤、アクリル系粘着剤のいずれか1つ以上を含むものであることが好ましい。
また、上記アクリル系粘着剤は、極性基を有するものであることがより好ましく、極性基を有するアクリル系粘着剤としては、カルボキシル基含有のアクリル酸ブチル等が挙げられる。
粘着層2が極性基を有するアクリル系粘着剤を含むことにより、半導体部材のマウント、端材飛び及びチッピングの抑制が特に好適なものとなる。
また、パッケージ等の特殊部材ダイシング用としては10μm以上30μm以下であることが好ましい。前記範囲下限値以上とすることにより被着体の保持力に優れ、前記範囲上限値以下とすることによりダイシング時の加工性に優れる。
これにより、ダイシング時のヒゲの発生をより一層抑制することができるとともに、半導体部材のマウント、端材飛び及びチッピングの抑制がさらに好適なものとなる。
本発明に係るダイシングフィルム10の粘着層2は、基材層1または基材層1を含む樹脂フィルムに対して、粘着層2として用いられる樹脂を適宜溶剤に溶解または分散させて塗工液とし、ロールコーティングやグラビアコーティングなどの公知のコーティング法により塗布し、乾燥することにより形成される。
<ダイシングテープの作製>
基材を構成する材料として、低密度ポリエチレンF522N(宇部丸善ポリエチレン製)を準備し、Φ50mm押出機(L/D=25 ユニメルトピンスクリュー スクリュー圧縮比=2.9)、300mm幅のコートハンガーダイ(リップ間隙=0.5mm)、押出温度=220℃(スクリュー先端)の条件で押出製膜し、厚み100μmのシートを得た。その後、得られたシートの粘着剤塗工面にコロナ処理を施した。
粘着層の光重合開始剤として、2,2-ジメトキシ-1,2-ジフェニルエタン-1-オン(商品名「イルガキュア651」)を3重量%準備した。粘着層のイソシアネート系架橋剤として、ポリイソシアネート化合物(商品名「コロネートL」)を8重量%準備した。
基材を構成する材料として、スチレン-メタクリル酸メチル-アクリル酸ブチル共重合物と、スチレンーブタジエン共重合物SX100(PSジャパン株式会社製)60phrとを、ハイブラー7125 40phr(株式会社クラレ製)によりドライブレンドした後、厚み150μmのシートを得た以外は実施例1と同様にしてダイシングテープを得た。
基材として、低密度ポリエチレンF522N(宇部丸善ポリエチレン製)層(50μ厚)と高密度ポリエチレン樹脂サンテックB161(旭化成株式会社製)層(50μ厚)が積層された100μのシートを使用した以外は実施例1と同様にしてダイシングテープを得た。
基材を構成する材料として、スチレンーブタジエン共重合物SX100(PSジャパン株式会社製) 100重量部を使用した以外は実施例1と同様にしてダイシングテープを得た。
基材を構成する材料として、カルボキシル基を有する化合物を陽イオンで架橋したアイオノマー樹脂ハイミラン1855(三井デュポン製)100重量部を使用した以外は実施例1と同様にしてダイシングテープを得た。
基材を構成する材料として、高密度ポリエチレン樹脂サンテックB161(旭化成株式会社製)100重量部を使用した以外は実施例1と同様にしてダイシングテープを得た。
基材を構成する材料として、直鎖状低密度ポリエチレン樹脂モアテック0248Z(株式会社プライムポリマー製)100重量部を使用した以外は実施例1と同様にしてダイシングテープを得た。
次いで得られたダイシングテープの評価を以下のとおり行った。得られた評価結果は表1に示す。
<評価試験>
(1)引っ張り試験
(1-1)23℃環境下での引っ張り伸度を以下の方法で測定した。
プラスチック-引張特性の試験方法JISK7127準拠。
(1-2)80℃環境下での引っ張り伸度を以下の方法で測定した。
6mm幅、50mm長さの短冊を準備し、MD方向に200mm/minで引張って破断するまで引っ張って、破断伸度を求めた。
(2)ダイシング後の基材屑評価
作製したダイシングテープに、バックグラインド加工(ディスコ社製DAG810)したウエハ(厚み0.1mm)を貼り付け、下記条件でダイシングを行った後、チップを取り除いてテープ表面の観察を行い、カットラインから出てくる長さ100μ以上の基材屑の数をカウントした。
◎ : 0~5本
○ : 6-10本
× : 11本以上
ダイサー 「DAD―3350」、DISCO製
ブレード 「ZH205O 27HEDD」、DISCO製
ブレード回転数 30000rpm、60000rpm
カット速度 50mm/sec
切込量 粘着シート表面から30μm
カットサイズ 10mm×10mm
ブレードクーラー 2L/min
(3)エキスパンド性
5インチミラーウエハをテープに保持固定し、ダイシングソー(DISCO製 DAD3350)を用いてスピンドル回転数60,000rpm、カッティングスピード50mm/min.で10mm□のチップサイズにカット後、UV照射を行い、エキスパンダー(ヒューグル製)を使用し、20mmのストロークで10分間エキスパンドを行い、チップ間隔を測定することで評価した。
<評価基準>
◎:チップ間隔が50μm以上開いているもの
○:チップ間隔が30μm以上50μm未満開いているもの
×:チップ間隔が30μm以上開いていないもの
2・・・粘着層
10・・・ダイシングフィルム
Claims (6)
- 基材層と粘着層とを有するダイシングフィルムであって、
前記基材層の80℃における破断伸度が750%以下であることを特徴とするダイシングフィルム。 - 前記基材層の23℃における破断伸度が50%以上である請求項1に記載のダイシングフィルム。
- 前記基材層の厚みが、50~250μmである請求項1または2に記載のダイシングフィルム。
- 前記粘着層が、ゴム系、シリコーン系、アクリル系粘着剤のいずれか1つ以上を含むものである請求項1ないし3いずれか1項に記載のダイシングフィルム。
- 前記アクリル系粘着剤が極性基を有するものである請求項1ないし4いずれか1項に記載のダイシングフィルム。
- 前記粘着層の厚みが、3~40μmである請求項1ないし5いずれか1項に記載のダイシングフィルム。
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CN201380036534.3A CN104428873B (zh) | 2012-09-25 | 2013-09-18 | 切割膜 |
KR1020147034758A KR101948374B1 (ko) | 2012-09-25 | 2013-09-18 | 다이싱 필름 |
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JP2010278156A (ja) * | 2009-05-27 | 2010-12-09 | Nitto Denko Corp | 電子部品のダイシング用粘着シート |
JP2011195712A (ja) * | 2010-03-19 | 2011-10-06 | Sekisui Chem Co Ltd | 硬化性組成物、ダイシング−ダイボンディングテープ、接続構造体及び粘接着剤層付き半導体チップの製造方法 |
JP2011198976A (ja) * | 2010-03-19 | 2011-10-06 | Sumitomo Bakelite Co Ltd | ダイシングフィルム |
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JPH04196342A (ja) * | 1990-11-28 | 1992-07-16 | Mitsui Toatsu Chem Inc | 半導体ウエハダイシング用フィルム |
JP3984076B2 (ja) * | 2002-02-27 | 2007-09-26 | 日東電工株式会社 | ダイシング用粘着シート |
JP2006310846A (ja) * | 2005-04-28 | 2006-11-09 | Ls Cable Ltd | 半導体用ダイシングダイ接着フィルム |
TW200800584A (en) * | 2006-04-03 | 2008-01-01 | Gunze Kk | Surface protective tape used for back grinding of semiconductor wafer and base film for the surface protective tape |
JP4993446B2 (ja) * | 2006-09-08 | 2012-08-08 | 日東電工株式会社 | ウエハ保持用粘着シート |
JP2008117943A (ja) * | 2006-11-06 | 2008-05-22 | Nitto Denko Corp | ウォータージェットレーザダイシング用粘着シート |
JP4994429B2 (ja) * | 2008-08-04 | 2012-08-08 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP5561949B2 (ja) | 2009-04-08 | 2014-07-30 | 日東電工株式会社 | 熱硬化型ダイボンドフィルム |
JP2012094834A (ja) * | 2010-09-13 | 2012-05-17 | Sumitomo Bakelite Co Ltd | ダイシングフィルム |
KR101393878B1 (ko) * | 2010-09-30 | 2014-05-12 | 미쓰이 가가쿠 토세로 가부시키가이샤 | 확장성 필름, 다이싱 필름, 및 반도체 장치의 제조 방법 |
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JP2010278156A (ja) * | 2009-05-27 | 2010-12-09 | Nitto Denko Corp | 電子部品のダイシング用粘着シート |
JP2011195712A (ja) * | 2010-03-19 | 2011-10-06 | Sekisui Chem Co Ltd | 硬化性組成物、ダイシング−ダイボンディングテープ、接続構造体及び粘接着剤層付き半導体チップの製造方法 |
JP2011198976A (ja) * | 2010-03-19 | 2011-10-06 | Sumitomo Bakelite Co Ltd | ダイシングフィルム |
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MY168738A (en) | 2018-11-29 |
CN104428873A (zh) | 2015-03-18 |
CN104428873B (zh) | 2018-01-09 |
JPWO2014050658A1 (ja) | 2016-08-22 |
TWI614323B (zh) | 2018-02-11 |
TW201418401A (zh) | 2014-05-16 |
KR20150058100A (ko) | 2015-05-28 |
KR101948374B1 (ko) | 2019-02-14 |
JP6160623B2 (ja) | 2017-07-12 |
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