TWI614323B - 切割膜片 - Google Patents
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Abstract
本發明提供一種,在半導體製造時之切割步驟中切割碎屑、基材鬚的產生少,此外具有良好的強度及良好的外觀之切割膜片,具有基材層(1)與黏著層(2),其特徵為:基材層(1)之80℃的斷裂伸長率為750%以下。
Description
本發明係關於一種切割膜片。
在製造半導體裝置之步驟中,於切斷半導體晶圓或封裝件等半導體構件時使用切割膜片。切割膜片係為了貼附、切割(切斷、單片化)半導體構件,進而將該切割膜片延展等,並拾取該半導體晶圓等而使用。
一般而言,切割膜片以基材膜、黏著層構成。過去,作為基材膜多使用聚氯乙烯(PVC)樹脂膜。然而,由於PVC樹脂膜含有之可塑劑的附著所產生的半導體構件之汙染防止、對於環境問題之意識的高漲,近來開發出使用烯烴系樹脂、乙烯乙烯醇系樹脂及乙烯甲基丙烯酸丙烯酸酯系樹脂等非PVC樹脂系材料的基材膜(例如參考專利文獻1)。
此外近年,由於半導體構件之小型化.薄型化發展,在切割膜片之厚度精度產生不均之情況,於切割步驟中,造成在切刀之接觸方法產生差而半導體晶圓變得容易發生破裂等問題。此外,膜片厚度精度若有不均則亦造成產生半導體構件之切割殘屑、切割時的切割碎屑、基材鬚(自基材膜之切割線延伸出的鬚狀之切割殘渣)而附著於半導體元件等問題。特別是若為了改良晶圓之晶片缺損,而提高切刀的旋轉速度,則基材鬚產生的問題顯著地浮現。此外,貼附半導體構件而切割後,為了擴展半導體構件的間隔,而施行切割膜片之延展,但若基材未具有足夠的靭性則延展時亦發
生切割膜片斷裂等問題。因此,尋求切割時可抑制基材鬚,且延展時基材不斷裂之切割膜片。
【專利文獻】
專利文獻1:日本特開2003-257893
本發明之目的在於,提供一種在半導體製造時之切割步驟中切割碎屑、基材鬚的產生少,此外具有較佳的延展性之切割膜片。
此一目的,藉由下述(1)~(6)所記載之本發明內容而達成。
(1)一種切割膜片,具有基材層與黏著層,其特徵為:該基材層之80℃的斷裂伸長率為750%以下。
(2)如上述(1)記載之切割膜片,其中,該基材層之23℃的斷裂伸長率為50%以上。
(3)如上述(1)或(2)記載之切割膜片,其中,該基材層之厚度,為50~250μm。
(4)如上述(1)至(3)中任一項記載之切割膜片,其中,該黏著層,含有橡膠系、矽酮系、丙烯酸系黏著劑中之任1種以上。
(5)如上述(1)至(4)中任一項記載之切割膜片,其中,該丙烯酸系黏著劑具有極性基。
(6)如上述(1)至(5)中任一項記載之切割膜片,其中,該黏著層之厚度,為3~40μm。
依本發明,則可提供一種在半導體製造時之切割步驟中切割碎屑、基
材鬚的產生少,此外具有較佳的延展性之切割膜片。
1‧‧‧基材膜
2‧‧‧黏著層
10‧‧‧切割膜片
圖1 顯示本發明之切割膜片的一例之概略剖面圖。
將本發明之切割膜片的一例,參考附圖並詳細地說明。
本發明之切割膜片10,如圖1所例示地具有基材層1與黏著層2。
以下,依序對切割膜片10之各部的構成加以說明。
<基材層1>
基材層1為,用於在搬運晶圓時使其穩定,與用於在切割時切割進入至黏著劑層之下層為止,此外用於將切割後的晶片間隔擴展。
基材層1,80℃的斷裂伸長率為750%以下。
此處,切割膜片,在切割步驟中,由於與切刀的摩擦熱,而使其與切刀之接觸部,暴露在於80℃以上的高溫。在此等高溫狀態中,基材層成為柔軟而容易延伸的狀態,切割碎屑受切刀的旋轉拉伸而延長之現象為在切割步驟中產生基材鬚的原因之一。
此點,本發明之基材層1,藉由使80℃的斷裂伸長率為750%以下,在高溫狀態中不易成為柔軟而容易延伸的狀態,故可抑制切割步驟的鬚之產生。
基材層1之80℃的斷裂伸長率,若為750%以下則無特別限定,但宜為600%以下,更宜為400%以下。
此外,基材層1,23℃的斷裂伸長率宜為50%以上。
切割膜片,若基材未具有足夠的靭性,則有延展時產生基材層斷裂等問題之情況。與此相對,本發明之切割膜片,藉由使施行延展步驟的常溫附近之23℃的基材層1之斷裂伸長率為50%以上,而成為延展時基材層1難以斷裂之膜片。
基材層1之23℃的斷裂伸長率,若為50%以上則無特別限定,但宜為100%以上,更宜為200%以上。
藉此,可充分地防止延展時之切割膜片10的斷裂。
此外,若考慮與切刀的摩擦熱超過80℃之情況,則基材層1,在超過80℃的溫度中,亦宜具有低斷裂伸長率,例如100℃的判斷伸度,宜為600%以下,更宜為400%以下。
藉此,可進一步抑制切割步驟的基材鬚之產生。
作為構成基材層1之樹脂,雖無特別限定,但列舉例如低密度聚乙烯、聚苯乙烯、聚苯乙烯與橡膠。
其中,宜為低密度聚乙烯或聚苯乙烯、與橡膠或合成橡膠之混合物。
藉由使構成基材層1之樹脂,為低密度聚乙烯或聚苯乙烯、與橡膠或合成橡膠之混合物,容易使基材層1之23℃的斷裂伸長率為上述下限值以上,可發揮良好的延展性。
此外,容易使基材層1之80℃及100℃的斷裂伸長率為上述上限值以下,可更抑制切割時的鬚之產生。
基材層1之厚度,雖無特別限定,但宜為50~250μm,更宜為70~200μm,進一步宜為80~150μm。
藉由使基材層1之厚度為該下限值以上,延展時基材層1變得更難以斷裂;藉由使基材層1之厚度為該上限值以下,可更抑制切割時的鬚之產生。
此外基材層1,在未破壞本發明之效果的範圍,可配合目的,添加各種樹脂或添加劑等。例如,為了賦予抗靜電性,列舉可添加聚醚/聚烯烴嵌段
聚合物或聚醚酯醯胺嵌段聚合物等高分子型抗靜電添加劑、碳黑等之材料。另,在賦予抗靜電效果之情況中,自與烯烴系樹脂之相溶性的觀點來看,宜為使用聚醚/聚烯烴共聚物之離子傳導型抗靜電添加劑。
(黏著層2)
如圖1所例示,於本發明之切割膜片10的基材層1之至少單面,設置黏著層2。黏著層2,於切割膜片10具有保持包覆體的功能。
作為黏著層2所使用之樹脂組成物,列舉有:橡膠系黏著劑、矽酮系黏著劑、丙烯酸系黏著劑、UV硬化性胺酯丙烯酸酯樹脂、異氰酸酯系交聯劑等。此等之中,為了安裝半導體構件、及抑制端材之濺散與剝落,宜含有橡膠系黏著劑、矽酮系黏著劑、丙烯酸系黏著劑中之任一種以上。
此外,上述丙烯酸系黏著劑,更宜具有極性基,作為具有極性基之丙烯酸系黏著劑,列舉含羧基之丙烯酸丁酯等。
藉由使黏著層2包含具有極性基之丙烯酸系黏著劑,在半導體構件的安裝、端材之濺散與剝落的抑制上特別適合。
黏著層2之厚度,雖無特別限定,但宜為3μm以上40μm以下,切割膜片之半導體晶圓切割用宜為5μm以上20μm以下。
此外,作為封裝件等特殊構件切割用宜為10μm以上30μm以下。藉由使其為該範圍下限值以上而在包覆體的保持力上優良,藉由使其為該範圍上限值以下,可達成優良之切割時加工性。
切割膜片10中,構成基材層1之樹脂、構成黏著層2之樹脂的組合雖無特別限定,但例如構成基材層1之樹脂,為低密度聚乙烯或聚苯乙烯、與橡膠或合成橡膠之混合物時,構成黏著層2之樹脂,宜為橡膠系黏著劑、矽酮系黏著劑、丙烯酸系黏著劑、UV硬化性胺酯丙烯酸酯樹脂、異氰酸酯系交聯劑等,其中更宜包含橡膠系黏著劑、矽酮系黏著劑、丙烯酸系黏著劑中之任一種以上,進一步其中,特別宜包含具有極性基之丙烯酸系黏著劑。
藉此,可更進一步地抑制切割時的鬚之產生,並更適合半導體構件的
安裝、端材之濺散及剝落的抑制。
<切割膜片之製造方法的一例>
本發明之切割膜片10的黏著層2為,對基材層1或含有基材層1之樹脂膜,將作為黏著層2使用之樹脂溶解或分散於適當溶劑而使其為塗布液,以輥筒塗布或凹板塗布等習知之塗布法加以塗布、乾燥藉以形成。
於本發明之切割膜片10,可在不破壞本發明之效果的範圍內因應目的設置其他樹脂層。
雖藉由實施例將本發明更一步詳細地說明,但此僅為例示,本發明並未受實施例之限定。
(實施例1)
<切割膠帶的製作>
作為構成基材之材料,準備低密度聚乙烯F522N(宇部丸善POLYETHYLENE公司製造)、Φ50mm擠製機(L/D=25 Unimelt銷釘螺桿 螺桿壓縮比=2.9)、300mm寬度的衣架型模具(模唇間隙=0.5mm),以擠製溫度=220℃(螺桿前端)之條件擠出製膜,獲得厚度100μm的薄片。之後,於獲得之薄片的黏著劑塗布面施行電暈處理。
黏著層之基質聚合物,使用42重量%之將30重量份丙烯酸2-乙基己酯、70重量份醋酸乙烯、3重量份甲基丙烯酸2-羥乙酯共聚而獲得的共聚物(重量平均分子量為300,000)。
作為黏著層之硬化成分,準備47重量%之重量平均分子量為5,000,聚合性官能基為4的胺酯丙烯酸酯。
作為黏著層之光聚合引發劑,準備3重量%之2,2-二甲氧基-1,2-二苯基乙烷-1-酮(商品名「IRGACURE 651」)。作為黏著層之異氰酸酯系
將上述黏著層之基質聚合物、硬化成分、光聚合引發劑、交聯劑、與其等合計之2倍量的醋酸乙酯混合,製作樹脂溶液。將此樹脂溶液,以使乾燥後的黏著層之厚度為10μm的方式於基材棒塗塗布後,以80℃乾燥1分鐘,獲得期望之切割膠帶。
(實施例2)
HIPS/合成橡膠混合
除了作為構成基材之材料,將苯乙烯-甲基丙烯酸甲酯-丙烯酸丁酯共聚物、苯乙烯-甲基丙烯酸甲酯-丙烯酸丁酯共聚物及苯乙烯-丁二烯共聚物SX100(PS Japan公司製造)60phr,以S8007 40phr(KURARAY公司製造)乾摻後,獲得厚度150μm之薄片以外,與實施例1相同而獲得切割膠帶。
(實施例3)
LDPE/HDPE的疊層
除了作為基材,使用疊層有低密度聚乙烯F522N(宇部丸善POLYETHYLENE公司製造)層(50μ厚)與高密度聚乙烯樹脂Suntec B161(旭化成公司製造)層(50μ厚)的100μ之薄片以外,與實施例1相同而獲得切割膠帶。
(實施例4)
除了作為構成基材之材料,使用100重量份之苯乙烯丁二烯共聚物SX100(PS Japan公司製造)以外,與實施例1相同而獲得切割膠帶。
(比較例1)
除了作為構成基材之材料,使用100重量份之將具有羧基之化合物以陽離子交聯的離子聚合物樹脂Himilan 1855(DU PONT-MITSUI公司製造)以外,與實施例1相同而獲得切割膠帶。
(比較例2)
除了作為構成基材之材料,使用100重量份之高密度聚乙烯樹脂Suntec B161(旭化成公司製造)以外,與實施例1相同而獲得切割膠帶。
(比較例3)
除了作為構成基材之材料,使用100重量份之直鏈狀低密度聚乙烯樹脂MORETEC 0248Z(Prime Polymer公司製造)以外,與實施例1相同而獲得切割膠帶。
其次將獲得之切割膠帶的評價如同以下地施行。表1顯示得到的評價結果。
<評價試驗>
(1)拉伸試驗
(1-1)藉由以下之方法測定23℃環境下的拉伸伸長量。
依據塑膠-拉伸特性之試驗方法JISK7127。
(1-2)藉由以下之方法測定80℃環境下的拉伸伸長量。
準備寬度6mm、長度50mm之方形薄片,於MD方向以200mm/min拉伸至其斷裂為止,求出斷裂伸長率。
(2)切割後的基材屑評價
於製作出的切割膠帶,貼附經背面研磨加工(DISCO公司製造之DAG810)的晶圓(厚度0.1mm),以下述條件施行切割後,取下晶片而施行膠帶表面的觀察,計算自切割線超出之長度100μ以上的基材屑之數目。
◎:0~5根
○:6-10根
×:11根以上
<切割條件>
(3)延展性
將5吋鏡面晶圓於膠帶保持固定,使用切割機(DISCO公司製造之DAD3350)以轉軸轉速60,000rpm、切割速度50mm/sec切割為10mm□之晶片尺寸後,施行UV照射,使用擴展機(Hugle公司製造),以20mm之行程施行延展10分鐘,測定晶片間隔藉以評價。
<評價基準>
◎:晶片間隔相隔50μm以上者
○:晶片間隔相隔30μm以上未滿50μm者
×:晶片間隔未相隔20μm以上者
本發明之切割膜片在切割時的切割碎屑、基材鬚之產生少,作為切割膜片具有良好的強度與良好的外觀,故在半導體裝置製造之切割步驟中可作為半導體構件固定用之膜片適宜地使用。
1‧‧‧基材膜
2‧‧‧黏著層
10‧‧‧切割膜片
Claims (4)
- 一種切割膜片,具有基材層與黏著層,其特徵為:該基材層在80℃的斷裂伸長率為750%以下;該基材層含有低密度聚乙烯,且該黏著層含有橡膠系、矽酮系、具羧基之丙烯酸系黏著劑中之任1種以上。
- 如申請專利範圍第1項之切割膜片,其中,該基材層在23℃的斷裂伸長率為50%以上。
- 如申請專利範圍第1或2項之切割膜片,其中,該基材層之厚度為50~250μm。
- 如申請專利範圍第1項之切割膜片,其中,該黏著層之厚度為3~40μm。
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JP3984076B2 (ja) * | 2002-02-27 | 2007-09-26 | 日東電工株式会社 | ダイシング用粘着シート |
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JP5519189B2 (ja) | 2009-05-27 | 2014-06-11 | 日東電工株式会社 | 電子部品のダイシング用粘着シート |
JP5580631B2 (ja) | 2010-03-19 | 2014-08-27 | 積水化学工業株式会社 | 硬化性組成物、ダイシング−ダイボンディングテープ、接続構造体及び粘接着剤層付き半導体チップの製造方法 |
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KR101948374B1 (ko) | 2019-02-14 |
CN104428873A (zh) | 2015-03-18 |
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