WO2020196794A1 - 保護フィルム及びその貼着方法並びに半導体部品の製造方法 - Google Patents
保護フィルム及びその貼着方法並びに半導体部品の製造方法 Download PDFInfo
- Publication number
- WO2020196794A1 WO2020196794A1 PCT/JP2020/013846 JP2020013846W WO2020196794A1 WO 2020196794 A1 WO2020196794 A1 WO 2020196794A1 JP 2020013846 W JP2020013846 W JP 2020013846W WO 2020196794 A1 WO2020196794 A1 WO 2020196794A1
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- Prior art keywords
- protective film
- region
- main surface
- semiconductor wafer
- attaching
- Prior art date
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Images
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Definitions
- the present invention relates to a protective film to be attached to the main surface of a semiconductor wafer and a method of attaching the protective film when manufacturing a semiconductor component from a semiconductor wafer, and a method of manufacturing the semiconductor component including a method of attaching the protective film.
- the back surface is ground in the back grind process at the time of manufacturing the semiconductor component to obtain a desired thickness.
- This backgrinding step is carried out by attaching a protective film to the main surface of the semiconductor wafer and adsorbing and fixing the main surface to the chuck table via the protective film.
- the protective film usually has a base layer and an adhesive layer.
- a predetermined force is applied to the base layer using an attachment roller or the like.
- bumps and the like are not always provided in the entire region of the main surface. That is, some semiconductor wafers have both a concavo-convex region provided with bumps and the like and a flat region not provided with bumps and the like on the main surface.
- a semiconductor wafer in which a region in which bumps are not arranged is intentionally provided on the peripheral edge of the main surface for the purpose of engraving a serial number or a serial number (reference numeral 13B in FIG. 1A). See).
- a step is formed between the uneven region and the flat region so that the uneven region is high and the flat region is low.
- FIG. 8 is an explanatory view when the protective film 20 is attached to the semiconductor wafer 10 having the above-mentioned step on the main surface 10A by a general attachment method.
- the protective film 20 has a resin volume amount (hereinafter, also referred to as “meat amount”) sufficient to absorb the unevenness due to the bump 11 in the first region 12 by the unevenness absorbing layer 23, but the first The amount of meat is insufficient to fill the step between the region 12 and the second region 13, and the step may not be filled.
- the second region 13 provided on the main surface 10A for the purpose of engraving the above-mentioned serial number or serial number has a large size (area occupied by the main surface 10A), and there is a step in the entire second region 13 of this size.
- the amount of meat of the protective film 20 is remarkably insufficient to fill the space. Further, as shown by an arrow in FIG. 8, the meat portion (concavo-convex absorption layer 23) of the protective film 20 flows so as to escape further outward from the peripheral edge of the main surface 10A of the semiconductor wafer 10.
- the sticking method does not have a means for regulating the flow of the meat part.
- defects 24 such as dents and dents following the step are formed on the surface of the protective film 20.
- the protective film 20 is lifted from the chuck table at the defect 24 and the vacuum is easily broken. Therefore, a vacuum error, that is, a semiconductor wafer is generated in the backgrinding process. May cause poor adsorption to the chuck table. Further, even if the vacuum error is not generated, the protective film 20 is in a state of being lifted from the chuck table at the portion of the defect 24, and the external force applied from the back surface side during the back grind process cannot be sufficiently supported. Therefore, cracks, cracks, or invisible microcracks may occur in the semiconductor wafer after the back grind process is performed.
- the step generated on the main surface of the semiconductor wafer cannot be filled by using a protective film provided with an uneven absorbing resin layer or the like, and by a general method of attaching the protective film. For this reason, there is a problem that dents and dents that follow the steps are formed on the surface of the protective film, and problems such as vacuum error and cracks occur in the back grind process. ..
- the present invention has been made in view of the above problems, and provides a protective film capable of suppressing the occurrence of defects due to a step on the main surface of the semiconductor wafer, a method for attaching the protective film, and a method for manufacturing a semiconductor component. Is.
- the present invention is as follows as a means for solving the above problems.
- the method of attaching the protective film of the first invention includes an arrangement step of arranging the protective film so as to cover the main surface of the semiconductor wafer and a pasting step of pressing the protective film against the main surface to attach the protective film. It is a method of attaching a protective film provided with, The main surface has a first region in which bumps are arranged, a region including at least a part of the peripheral edge of the main surface, and a second region in which bumps are not arranged.
- the sticking step includes a compression step of compressing the protective film in the thickness direction thereof.
- the gist is that the compression step is performed by using a pressing member for pressing the protective film against the main surface and a support member installed along the outer peripheral edge of the second region.
- the arrangement step is a step of arranging the protective film so that the edge portion of the protective film protrudes outward from the peripheral edge of the second region.
- the compression step may be a step of compressing the edge portion by causing the support member to support the edge portion and sandwiching the edge portion between the support member and the pressing member. it can.
- the support surface that supports the edge portion of the protective film in the support member, is either parallel to the main surface or the main surface. It can be tilted to face the side.
- the clearance between the main surface of the semiconductor wafer and the pressing surface of the pressing member is set to C 1, and the supporting surface of the supporting member and the pressing member of the pressing member are described.
- the clearance between the pressing surface in the case of a C 2 can be assumed to be C 1> C 2.
- the arrangement step is a step of arranging the protective film so that the edge portion of the protective film is located on the inner peripheral side of the support member.
- the bulging of the protective film in the outer peripheral direction due to being sandwiched between the pressing member and the main surface is blocked by the inner peripheral surface of the support member, and the above-mentioned It can be a step of compressing the edge portion between the pressing member, the inner peripheral surface of the supporting member, and the main surface.
- the protective film can have a layer capable of exhibiting fluidity or plasticity.
- the compression step can be performed in a state where the protective film is heated to exhibit the fluidity or the plasticity.
- the average height of the bumps is H1 and the average thickness of the protective film is H2, 0.5 ⁇ H2 / H1. can do.
- the gist of the method for manufacturing a semiconductor component of the second invention is to include the method of attaching the protective film of the first invention.
- the gist is that the protective film of the third invention is used in the method of attaching the protective film of the first invention.
- the protective film attaching method of the fourth invention includes a processing step of processing the protective film to obtain a processed film, and The arrangement process of arranging the processed film so as to cover the main surface of the semiconductor wafer, and A method of attaching a protective film, comprising a pasting step of pressing the processed film against the main surface and sticking the film.
- the main surface has a first region in which bumps are arranged and a second region in which bumps are not arranged, including at least a part of the peripheral edge of the main surface.
- the processing step is a step of forming portions having different thicknesses on the protective film to obtain the processed film.
- the gist of the gist is that the arranging step is a step of arranging a region of the processed film having a relatively thick thickness among the portions having different thicknesses so as to correspond to the second region.
- the protective film can have a layer capable of exhibiting fluidity or plasticity.
- the processing step can be performed in a state where the protective film is heated to exhibit the fluidity or the plasticity.
- the average height of the bumps is H 1 and the average thickness of the protective film is H 2
- 0.5 ⁇ H 2 / H 1 Can be assumed to be.
- the gist of the method for manufacturing a semiconductor component of the fifth invention is to include the method of attaching the protective film of the fourth invention.
- the gist is that the protective film of the sixth invention is used in the method of attaching the protective film of the fourth invention.
- the protective film of the first invention and the fourth invention when there is a step on the main surface of the semiconductor wafer due to the presence or absence of bumps, the protective film is attached so as to suppress or eliminate the step. Can be done. As a result, the surface of the protective film can be made substantially flat, and the occurrence of defects due to the step on the main surface of the semiconductor wafer can be suppressed.
- the methods for manufacturing semiconductor parts of the second invention and the fifth invention it is possible to suppress the occurrence of defects caused by the step on the main surface of the semiconductor wafer. As a result, semiconductor parts can be efficiently manufactured.
- the protective films of the third invention and the sixth invention it is possible to suppress the occurrence of defects caused by the step on the main surface of the semiconductor wafer. As a result, semiconductor parts can be efficiently manufactured.
- FIG. 1B is an enlarged side sectional view taken along line 1B-1B of FIG. 1A. It is an enlarged side sectional view explaining the protective film which concerns on this invention.
- (A) is a plan view and (b) is an enlarged side sectional view explaining the sticking apparatus which concerns on the sticking method of 1st invention.
- (A) is a plan view and (b) is an enlarged side sectional view explaining the arrangement process which concerns on the sticking method of 1st invention. It is an enlarged side sectional view explaining the sticking process which concerns on the sticking method of 1st invention. It is an enlarged side sectional view explaining the compression process which concerns on the sticking method of 1st invention.
- (a), (b) is an enlarged side sectional view illustrating the relationship between the clearance C 2 clearance C 1 and the supporting member of the semiconductor wafer against the pressing member.
- (a) is an enlarged side sectional view for explaining an arrangement process
- (b) is an enlarged side sectional view for explaining a compression process.
- (A) is a side sectional view and (b) is an enlarged side sectional view explaining the processing process which concerns on the attachment method of 4th invention. It is an enlarged side sectional view explaining the arrangement process which concerns on the sticking method of 4th invention. It is an enlarged side sectional view explaining the sticking process which concerns on the sticking method of 4th invention.
- (A) and (b) which explain another example of the processing process which concerns on the sticking method of 4th invention are the enlarged side sectional views.
- Pasting method is the first embodiment according to the first invention, and is a sticking method of a protective film 20 that protects the main surface 10A of the semiconductor wafer 10.
- This bonding method includes an arrangement step S1 (see FIG. 4B) in which the protective film 20 is arranged so as to cover the main surface 10A of the semiconductor wafer 10, and the protective film 20 is pressed against the main surface 10A for bonding.
- a landing step S2 (see FIG. 5) is provided.
- the main surface 10A of the semiconductor wafer 10 is a region including at least a part of a first region 12 on which bumps 11 are arranged and a peripheral edge of the main surface 10A, and a second region in which bumps 11 are not arranged. 13 and (see FIGS.
- the sticking step S2 includes a compression step S3 that compresses the protective film 20 in the thickness direction thereof (see FIG. 6).
- This compression step S3 is performed using a pressing member 32 for pressing the protective film 20 against the main surface 10A and a supporting member 33 installed along the outer peripheral edge of the second region 13.
- the semiconductor wafer 10 to which the protective film 20 is attached by this attachment method is made to have a desired thinness in the backgrinding process, is separated into individual pieces, and is subjected to various processes to obtain semiconductor parts from the semiconductor wafer 10. Is manufactured. That is, the present attachment method (first embodiment) is included in the method for manufacturing a semiconductor component according to the second invention.
- the semiconductor wafer 10 used in this bonding method has bumps 11 on either the front or back surfaces, and the entire surface of the semiconductor wafer 10 on the side having the bumps 11 is the main surface 10A (FIG. 1 (FIG. 1). b) See).
- This sticking method can be carried out using a sticking device 30 (see FIG. 3) capable of performing the placement step S1, the sticking step S2, and the compression step S3.
- the pressing member 32 and the supporting member 33 can be provided on the sticking device 30.
- the sticking step S2 includes a compression step S3 for compressing the protective film 20 in the thickness direction thereof.
- This compression step S3 is performed using a pressing member 32 for pressing the protective film 20 against the main surface 10A and a support member 33 installed along the outer peripheral edge of the second region 13 of the main surface 10A.
- the layer (unevenness absorbing layer 23) exhibiting fluidity or plasticity flows appropriately according to the step or unevenness, and the meat fills the step or unevenness. It causes the part to shift.
- the compression step S3 is performed using the pressing member 32 and the supporting member 33, the flow of the meat portion of the protective film 20 that tends to move further outward than the peripheral edge of the main surface 10A is restricted. Then, as the flow of the meat portion of the protective film 20 is regulated as described above, the meat portion (concavo-convex absorption layer 23) of the protective film 20 is thickly offset on the second region 13 of the main surface 10A. The step on the surface 10A is filled, and the surface of the protective film 20 becomes flat.
- the semiconductor wafer 10 according to the present attachment method is not particularly limited in terms of material and shape, but is usually formed in a disk shape using silicon as a material.
- the semiconductor wafer 10 has a plurality of bumps 11 on the main surface 10A.
- the main surface 10A is the entire surface of the semiconductor wafer 10 having the bumps 11 on the side where the bumps 11 are provided.
- the main surface 10A includes a surface of the semiconductor wafer 10 and a surface of the bump 11. Further, in the semiconductor wafer 10, the surface opposite to the main surface 10A is the back surface.
- the main surface 10A has a first region 12 in which the bumps 11 are arranged and a second region 13 in which the bumps 11 are not arranged.
- the second region 13 has a peripheral region 13A and a blank region 13B.
- the peripheral region 13A is a region forming the peripheral edge of the semiconductor wafer 10 (that is, a region forming the peripheral edge of the main surface 10A).
- the semiconductor wafer 10 is provided with a chamfered portion 14 on the peripheral edge thereof for the purpose of preventing chipping or cracking of the peripheral edge thereof (see FIGS. 1 and 11), and the region including the chamfered portion 14 is the peripheral edge region 13A. is there.
- the blank area 13B is an area in which bumps can be arranged, but the bumps are not actually arranged.
- the blank region 13B is a region obtained by removing the peripheral region 13A from the second region 13.
- each of the above-mentioned regions is not limited, but for example, the first region 12 has a substantially circular shape in a plan view as illustrated in FIG. 1A in a substantially central portion of the main surface 10A. Can be provided in. Further, the first region 12 can be provided in a polygonal shape in a plan view in a substantially central portion of the main surface 10A, as illustrated in FIG. 11A. In order to make the first region 12 and the second region 13 easy to understand, the boundary lines of these regions are shown by two-dot chain lines in FIGS. 1 (a) and 11 (a).
- the second region 13 can be provided in a shape surrounding the first region 12, for example, as illustrated in FIGS. 1 (a) and 11 (a). Further, the shape of the peripheral region 13A constituting the second region 13 can be made substantially annular in a plan view so as to surround the first region 12 inward (see FIGS. 1 and 11).
- the shape (planar shape) of the blank region 13B can be bow-shaped as illustrated in FIG. 1 (a). That is, the peripheral region 13A on the left side of the main surface 10A can be a blank region 13B provided so as to be extended in a bow shape toward the center of the main surface 10A. Such a blank area 13B can be used for the purpose of displaying (for example, engraving) various information such as the serial number and the serial number of the semiconductor wafer 10. Therefore, the bow-shaped blank region 13B of FIG. 1A can also be said to be an identification region. Further, the shape (planar shape) of the blank region 13B can be a shape that surrounds the circumference of the first region 12 from four sides, front, back, left, and right, as illustrated in FIG. 11A.
- the shape of the blank region 13B can be a shape in which four arc shapes are connected.
- Such a blank area 13B can be used as an area in which the bumps 11 are not arranged, for example, because an error is likely to occur during commercialization.
- the blank region 13B in FIG. 11A can be said to be a region formed when the size of the chip cut out from the semiconductor wafer 10 is large. That is, when the size of the chip is small, the first region 12 has a substantially circular shape in the plan view of FIG. 1 (a). On the other hand, when the size of the chip is large, the first region 12 has a substantially polygonal shape in the plan view of FIG. 11A.
- the blank region 13B of FIG. 11A is formed so as to surround the periphery of the first region 12.
- the size of the chip is, for example, 100 mm 2 or more.
- the surface of the blank area 13B will be referred to as "blank area surface 101A".
- the average height H1 of the bumps 11 on the main surface 10A is not particularly limited, and can be arbitrarily set according to the type of bumps 11 such as plating bumps, ball bumps, and printing bumps.
- the height H1 of the bump 11 on the main surface 10A is preferably less than 350 ⁇ m, more preferably in the range of 5 to 250 ⁇ m, and even more preferably in the range of 10 to 150 ⁇ m.
- the ratio of the area of the second region 13 to the total area of the main surface 10A is not particularly limited and can be arbitrarily set depending on the size of the blank region 13B, but is preferably less than 30%, more preferably 23% or less. , More preferably 15% or less.
- the ratio of the area of the peripheral region 13A to the total area of the main surface 10A is not particularly limited, but is preferably 10% or less, more preferably 8% or less, still more preferably 5% or less.
- the ratio of the area of the blank region 13B to the total area of the main surface 10A is not particularly limited and can be set arbitrarily, but is preferably 20% or less, more preferably 15% or less, still more preferably 10%. It is as follows.
- both the peripheral region 13A and the blank region 13B have a step between the peripheral region 13A and the first region 12, and dents and dents following the step are formed on the surface of the protective film 20. By doing so, there is a possibility of causing problems such as the occurrence of vacuum error, cracks, and cracks.
- the blank area 13B has a larger ratio of the area to the total area of the main surface 10A than the peripheral area 13A, so that dents and dents larger than the peripheral area 13A are protected. It is likely to be formed on the surface of the film 20 and is likely to cause the above-mentioned problems. Therefore, in the following description, the second region 13 will be described with reference to the blank region 13B unless otherwise specified.
- the protective film 20 used in this bonding method is a film used in a method for manufacturing a semiconductor component, and more specifically, in a method for manufacturing a semiconductor component, the semiconductor wafer is made to a desired thickness. This is a film used in the backgrinding process. That is, the present protective film is a protective film according to the third invention.
- the protective film 20 may have a base layer 21 and an adhesive layer 22.
- the protective film 20 preferably has a layer capable of exhibiting fluidity or plasticity from the viewpoint of eliminating unevenness due to bumps 11 and steps due to height differences between the first region 12 and the second region 13.
- the protective film 20 of the present embodiment has an uneven absorption layer 23 as a layer capable of exhibiting fluidity or plasticity between the base layer 21 and the pressure-sensitive adhesive layer 22.
- the average thickness H2 of the protective film 20 is between the average height H1 of the bump 11 from the viewpoint of preferably eliminating the unevenness due to the bump 11 and the step due to the height difference between the first region 12 and the second region 13. Therefore, it is preferable to satisfy the relational expression of 0.5 ⁇ H2 / H1.
- the upper limit of H2 / H1 from the viewpoint that the protective film 20 absorbs the unevenness due to the bump 11 and the step due to the height difference between the first region 12 and the second region 13 depending on the amount of the meat, and preferably eliminates the upper limit. , There are no particular restrictions.
- H2 / H1 is usually 10 or less (H2 / H1 ⁇ 10). ), Preferably 5 or less (H2 / H1 ⁇ 5), more preferably 4 or less (H2 / H1 ⁇ 4).
- the average thickness H2 of the protective film 20 is preferably 30 ⁇ m or more, more preferably 100 ⁇ m or more, and further preferably 200 ⁇ m or more. It is assumed that the average height H1 is the average value of the measured heights of 1/10 of the randomly selected bumps out of the total number of bumps. Further, the average thickness H2 is assumed to be an average value of the measured thicknesses of the films at 10 locations selected so as to be separated from each other by 2 cm or more.
- the base layer 21 is a layer provided for the purpose of improving the handleability, mechanical properties, heat resistance, and other properties of the protective film 20.
- the material used for the base layer 21 is not particularly limited as long as it has mechanical strength that can withstand the external force applied when grinding the semiconductor wafer in the back grind process.
- a synthetic resin film is used as the material of the base layer 21.
- polyesters such as polyethylene terephthalate and polybutylene terephthalate; nylon-6 and nylon-66.
- Polyesters such as polymethoxylen adipamide; polyacrylates; polymethacrylates; polyvinyl chlorides; polyetherimides; ethylene / vinyl acetate copolymers; polyacrylonitriles; polycarbonates; polystyrenes; ionomers; polysulfones; polyethersulfones; polyphenylene ethers And the like, one kind or two or more kinds of thermoplastic resins selected from the above can be mentioned.
- one or more selected from polypropylene, polyethylene terephthalate, polyamide, and ethylene / vinyl acetate copolymer are preferable from the viewpoint of suitably protecting the semiconductor wafer in the back grind process, and polyethylene terephthalate is preferable.
- polyethylene terephthalate is preferable.
- One or more selected from ethylene-vinyl acetate copolymers are more preferable.
- plasticizers such as mineral oil, etc.
- fillers carbonates, sulfates, titanates, silicates, oxides (titanium oxide, magnesium oxide), silica, talc) , Mica, clay, fiber filler, etc.
- antioxidants light stabilizers, antistatic agents, talc, colorants, etc.
- Only one of these additives may be used, or two or more of these additives may be used in combination.
- any stretched film such as a non-stretched film, a uniaxially stretched film or a biaxially stretched film can be used regardless of the presence or absence of stretching, but from the viewpoint of improving mechanical strength, the stretched film is used. preferable. Further, as the film, either a single-layer film or a multilayer film having a plurality of layers can be used.
- the base layer 21 it is preferable to use a surface-treated film from the viewpoint of improving the adhesiveness with the uneven absorption layer 23 and the like.
- Specific examples of the surface treatment include corona treatment, plasma treatment, undercoat treatment, primer coating treatment and the like.
- the thickness of the base layer 21 is not particularly limited, but is preferably 10 to 200 ⁇ m, more preferably 20 to 150 ⁇ m, and even more preferably 30 to 100 ⁇ m from the viewpoint of obtaining good characteristics.
- the adhesive material layer 22 is a layer provided for the purpose of attaching and fixing the protective film 20 to the main surface 10A of the semiconductor wafer 10.
- the material of the pressure-sensitive adhesive layer 22 is not particularly limited, but a material containing at least a pressure-sensitive adhesive main agent is used.
- the pressure-sensitive adhesive include (meth) acrylic pressure-sensitive adhesives, silicone-based pressure-sensitive adhesives, urethane-based pressure-sensitive adhesives, rubber-based pressure-sensitive adhesives, and the like.
- the material of the pressure-sensitive adhesive layer 22 may contain a cross-linking agent in addition to the pressure-sensitive adhesive main agent.
- the material of the pressure-sensitive adhesive layer 22 either an energy ray-curable pressure-sensitive adhesive material that can be cured by energy rays or an energy-non-curable pressure-sensitive adhesive material that is not cured by energy rays can be used.
- the energy ray-curable adhesive material has the adhesive material layer 22 from the viewpoint that the protective film 20 can be peeled off from the main surface 10A without adhesive residue by curing by energy ray irradiation to reduce the adhesive force.
- the type of energy ray of the energy ray-curable adhesive is not particularly limited, and examples thereof include ultraviolet rays, electron beams, and infrared rays.
- the energy ray-curable pressure-sensitive adhesive material can initiate polymerization of a compound having a carbon-carbon double bond in the molecule and a curable compound in response to energy rays in addition to the pressure-sensitive adhesive main agent.
- the curable compound is preferably a monomer, oligomer or polymer having a carbon-carbon double bond in the molecule and curable by radical polymerization.
- the adhesive strength of the adhesive layer 22 is not particularly limited, but it is attached to the surface of the silicon wafer from the viewpoint of ensuring good adhesion to the semiconductor wafer and suppressing adhesive residue on the semiconductor wafer at the time of peeling.
- the adhesive strength to the silicon wafer measured according to JIS Z0237 when peeling from the surface of the silicon wafer is 0. It is preferably 1 to 10 N / 25 mm.
- the adhesive strength is more preferably 0.2 to 9 N / 25 mm, still more preferably 0.3 to 8 N / 25 mm.
- the thickness of the pressure-sensitive adhesive layer 22 is not particularly limited, but is preferably 1 to 50 ⁇ m, more preferably 2 to 45 ⁇ m, and further preferably 3 to 40 ⁇ m from the viewpoint that it can be peeled off without adhesive residue while exhibiting suitable adhesive strength. Is.
- the concavo-convex absorption layer 23 absorbs the concavo-convex shape due to the bumps 11 arranged on the main surface 10A due to the concavo-convex absorption exhibited by the development of fluidity or plasticity, and the first region. This layer is provided for the purpose of filling the step due to the height difference between the 12 and the second region 13 and smoothing the surface of the protective film 20.
- the material of the unevenness absorbing layer 23 is not particularly limited as long as it has unevenness absorbing property due to the development of fluidity or plasticity, but a thermoplastic resin is usually used.
- thermoplastic resins include olefin resins, ethylene / polar monomer copolymers, ABS resins, vinyl chloride resins, vinylidene chloride resins, (meth) acrylic resins, polyamide resins, fluororesins, and polycarbonate resins.
- polyester resins include polyester resins.
- at least one selected from an olefin resin and an ethylene / polar monomer copolymer is preferable from the viewpoint of good unevenness absorption.
- the olefin resin examples include linear low-density polyethylene (LLDPE), low-density polyethylene, high-density polyethylene, polypropylene, ethylene, an ethylene / ⁇ -olefin copolymer containing an ⁇ -olefin having 3 to 12 carbon atoms, and propylene.
- LLDPE linear low-density polyethylene
- ethylene low-density polyethylene
- high-density polyethylene polypropylene
- propylene examples thereof include propylene / ⁇ -olefin copolymers containing ⁇ -olefins having 4 to 12 carbon atoms, ethylene / cyclic olefin copolymers, ethylene / ⁇ -olefin / cyclic olefin copolymers, and the like.
- ethylene / polar monomer copolymer examples include ethylene / ethyl (meth) acrylate copolymer, ethylene / methyl (meth) acrylate copolymer, ethylene / propyl (meth) acrylate copolymer, and ethylene / (meth).
- Ethylene / unsaturated carboxylic acid ester copolymer such as butyl acrylate copolymer; ethylene / vinyl acetate copolymer, ethylene / vinyl propionate copolymer, ethylene / vinyl butyrate copolymer, ethylene / vinyl stearate
- examples thereof include ethylene / vinyl ester copolymers such as copolymers.
- the above-mentioned thermoplastic resin may be used alone or in combination of two or more.
- the density of the uneven absorption layer 23 is not particularly limited, but is preferably 800 to 990 kg / m from the viewpoint of the balance (rigidity) between the flexibility related to the uneven absorption and the rigidity related to the durability in the back grind process. 3 , more preferably 830 to 980 kg / m 3 , still more preferably 850 to 970 kg / m 3 .
- the thickness of the unevenness absorbing layer 23 is not particularly limited as long as it can exhibit the unevenness absorbing property between the uneven shape formed by the bump 11 and the step difference due to the height difference between the first region 12 and the second region 13, but the unevenness absorbing layer is not particularly limited. From the viewpoint of preferably exhibiting the properties, it is preferably 20 ⁇ m or more, more preferably 80 ⁇ m or more, and further preferably 170 ⁇ m or more.
- the storage elastic modulus G'(60) of the uneven absorption layer 23 at 60 ° C. is 0.05 ⁇ from the viewpoint that the uneven absorption layer 23 can exhibit suitable uneven absorption by heating when the protective film 20 is attached. It is preferably 10 6 to 1.0 ⁇ 10 6 Pa, more preferably 0.075 ⁇ 10 6 to 0.5 ⁇ 10 6 Pa.
- the storage elastic modulus G'(25) of the uneven absorption layer 23 at 25 ° C. is from the viewpoint that the uneven absorption layer 23 can retain its shape after the protective film 20 is attached and can maintain suitable adhesion to the main surface 10A. Therefore, 4.0 ⁇ 10 6 to 7.0 ⁇ 10 6 Pa is preferable, and 4.5 ⁇ 10 6 to 6.5 ⁇ 10 6 Pa is more preferable.
- the elastic modulus ratio G'(60) / G'(25) between the storage elastic modulus G'(25) and the storage elastic modulus G'(60) of the uneven absorption layer 23 can exhibit good unevenness absorption and can exhibit good unevenness absorption. From the viewpoint of maintaining good adhesion to the main surface 10A, G'(60) / G'(25) ⁇ 0.1 is preferable, and more preferably G'(60) / G'(25) ⁇ 0. 08, more preferably G'(60) / G'(25) ⁇ 0.05.
- the storage elastic modulus G' is determined by using a dynamic viscoelasticity measuring device (for example, manufactured by Leometrics Co., Ltd., type "RMS-800") under the conditions of a measuring frequency of 1 Hz and a strain of 0.1 to 3%. '(25) is measured at 25 ° C. and storage elastic modulus G'(60) is measured at 60 ° C.
- a dynamic viscoelasticity measuring device for example, manufactured by Leometrics Co., Ltd., type "RMS-800
- the protective film 20 is not limited to the above-mentioned structure having the base layer 21, the pressure-sensitive adhesive layer 22, and the unevenness absorbing layer 23, and is not limited to the above-mentioned structure, but is adhered between the base layer 21 and the unevenness absorbing layer 23 or with the unevenness absorbing layer 23.
- the structure may have another layer between the material layer 22 and the material layer 22.
- Other layers include an interface strength improving layer that improves the interface strength with the pressure-sensitive adhesive layer 22, an migration prevention layer that suppresses the transfer of low molecular weight components to the adhesive surface of the pressure-sensitive adhesive layer 22, and an antistatic layer for the protective film 20.
- An antistatic layer or the like is used. Only one of these may be used, or two or more thereof may be used in combination.
- the sticking device 30 is not particularly limited as long as it has a configuration capable of executing the arrangement step S1, the sticking step S2, and the compression step S3.
- the configuration shown below can be exemplified.
- the attachment device 30 includes a chuck table 31, a pressing member 32 arranged at an upper position of the chuck table 31, and a support member arranged beside the chuck table 31. It has 33 and.
- the chuck table 31 is for supporting and fixing the semiconductor wafer 10 placed on the surface thereof.
- the pressing member 32 is for pressing the protective film 20 against the main surface 10A of the semiconductor wafer 10 supported and fixed to the chuck table 31.
- the support member 33 is installed along the outer peripheral edge of the second region 13 of the semiconductor wafer 10 supported and fixed to the chuck table 31 to support the edge portion of the protective film 20.
- the sticking device 30 can be configured to have a heating mechanism for heating the protective film 20 from the viewpoint of preferably expressing fluidity or plasticity in the uneven absorption layer 23 of the protective film 20.
- a heating mechanism for heating the protective film 20 from the viewpoint of preferably expressing fluidity or plasticity in the uneven absorption layer 23 of the protective film 20.
- a hot air heater or the like can be exemplified.
- the sticking device 30 can be configured to have a supply mechanism for supplying the protective film 20 in the device from the viewpoint that the arrangement step S1 can be suitably executed. Examples of this supply mechanism include a film supply roller and a film supply arm.
- the chuck table 31 is not particularly limited in type, configuration, and the like as long as it can support and fix the semiconductor wafer 10.
- the chuck table 31 is preferably a vacuum suction table from the viewpoint that the semiconductor wafer 10 can be suitably fixed and the semiconductor wafer 10 can be prevented from being soiled or scratched.
- the pressing member 32 is not particularly limited in shape, configuration and the like as long as the protective film 20 can be pressed against the main surface 10A of the semiconductor wafer 10.
- the pressing member 32 shown in FIGS. 3A and 3B is formed in a disk shape, is arranged above the semiconductor wafer 10 supported and fixed to the chuck table 31, and approaches the semiconductor wafer 10. Or it is configured so that it can be separated.
- the pressing member 32 preferably has a flat pressing surface 32A on which the protective film 20 is pressed.
- the hardness of the pressing surface 32A is a Mohs hardness, preferably 2.5 to 8.5, from the viewpoint of suppressing deformation when the protective film 20 is pressed and maintaining the pressing surface 32A as a flat surface. It is more preferably 3 to 7, still more preferably 4 to 6.
- the material of the pressing surface 32A is not particularly limited, but from the viewpoint of satisfying the above-mentioned Morse hardness, a metal such as iron, copper, aluminum, steel, stainless steel or aluminum alloy, or an inorganic material such as glass or ceramics is used. Can be done.
- the pressing member 32 may be configured such that, for example, only the pressing surface 32A is formed of the above-mentioned inorganic material, and the portion other than the pressing surface 32A is formed of a synthetic resin.
- the configuration in which the pressing member 32 is brought close to or separated from the semiconductor wafer 10 is not particularly limited.
- the pressing member 32 is configured such that one end of the pressing member 32 is rotatably attached to the sticking device 30 so as to approach the semiconductor wafer 10 when it is flipped down and to be separated from the semiconductor wafer 10 when it is flipped up. be able to.
- the pressing member 32 is vertically attached to a rail or the like provided in the attachment device 30 so as to extend in the thickness direction of the semiconductor wafer 10, and when it is lowered, it approaches the semiconductor wafer 10 and when it is raised, it approaches the semiconductor wafer 10. It can be configured to be separated from the semiconductor wafer 10.
- the pressing member 32 is fixed at an upper position of the chuck table 31, and the chuck table 31 is configured to be able to move up and down.
- the chuck table 31 rises, the semiconductor wafer 10 approaches the pressing member 32 and the chuck table When the 31 is lowered, the semiconductor wafer 10 can be configured to be separated from the pressing member 32.
- Support member 33 is not particularly limited in configuration or the like as long as the protective film 20 can be compressed in the compression step S3.
- the shape of the support member 33 is not particularly limited as long as it can be installed along the outer peripheral edge of the second region 13 of the semiconductor wafer 10 and the compression step S3 can be suitably executed. Examples of such a shape include an annular shape, a fan shape, an arc shape, and the like in a plan view.
- the material of the support member 33 is not particularly limited as long as it can be compressed by sandwiching the protective film 20 together with the pressing member 32. Examples of such materials include thermoplastic resins such as engineering plastics and super engineering plastics, thermosetting resins, and the like, in addition to the inorganic materials such as metals mentioned in the pressing member 32.
- the support member 33 shown in FIGS. 3A and 3B is formed in an annular shape in a plan view so that the entire semiconductor wafer 10 can be enclosed inside.
- the shape of the support member 33 is fan-shaped, arc-shaped, or the like in a plan view, it is preferable to install the support member 33 along the outer peripheral edge of the blank region 13B in the second region 13.
- the support member 33 requires a width W 1 of a certain value or more in a plan view, the action of the protective film 20, that is, the blank region 13B at the portion sandwiched between the pressing member 32 and the support member 33 It is possible to exert the effect of filling the step.
- the volume required to fill the step is appropriately adjusted according to conditions such as the height of the bump 11, the area of the blank region 13B occupied on the main surface 10A of the semiconductor wafer 10, and the thickness of the protective film 20. Therefore, the width W 1 of the support member 33 in a plan view is not particularly limited, but is generally preferable from the viewpoint that the protective film 20 can be reliably sandwiched between the support member 33 and the pressing member 32 for compression. Is 1 to 20 mm, more preferably 2 to 15 mm, still more preferably 3 to 10 mm.
- the support surface 33A that supports the edge of the protective film 20 in the support member 33 is formed by using the meat (for example, the uneven absorption layer 23) of the edge of the protective film 20 compressed in the compression step S3 as the main surface 10A of the semiconductor wafer 10. From the viewpoint of suitably moving to the second region 13 of the above, particularly on the blank region surface 101A of the blank region 13B, it is parallel to the main surface 10A of the semiconductor wafer 10. Alternatively, as shown in FIG. 9, on the support surface 33A of the support member 33, the meat (for example, the uneven absorption layer 23) at the edge of the protective film 20 compressed in the compression step S3 is spread on the blank region surface 101A. From the viewpoint of suitable movement, the semiconductor wafer 10 may be tilted so as to face the main surface 10A side.
- the sticking apparatus 30 shown in FIGS. 3A and 3B supports the semiconductor wafer 10 with a clearance of C 1 between the main surface 10A and the pressing member 32 from the viewpoint that the compression step S3 can be suitably executed.
- C 1 > C 2 is set.
- the support surface 33A of the support member 33 is arranged at a position higher than the blank region surface 101A on the main surface 10A of the semiconductor wafer 10.
- the support surface 33A of the support member 33 is arranged at the same height as the surface of the second region 13 of the semiconductor wafer 10, and when C 1 ⁇ C 2 , the support surface 33A of the support member 33 is arranged. Is arranged at a position lower than the surface of the second region 13 of the semiconductor wafer 10.
- the shape of the protective film 20 to be supplied is not particularly limited, and any of a circular shape, a square shape, a rectangular shape, and a strip shape can be used in a plan view.
- the supply method of the protective film 20 is not particularly limited, and either a batch type in which the protective film 20 is supplied one by one or a continuous type in which the protective film 20 is continuously supplied can be used.
- the shape of the protective film 20 supplied is a circular shape in a plan view corresponding to the main surface 10A, and the supply method of the protective film 20 is a batch type. is there.
- the protective film 20 is arranged so that the edge portion (peripheral portion) of the protective film 20 protrudes outward from the peripheral edge of the second region 13.
- the amount of protrusion of the edge of the protective film 20 is not particularly limited. From the viewpoint of reliably performing the compression step S3, the amount of protrusion is preferably an amount that allows the protruding edge portion to be placed on the support surface 33A of the support member 33.
- the amount of protrusion of the edge of the protective film 20 is exerted in order to exert the action of the protective film 20, that is, the action of filling the step of the blank region 13B at the portion sandwiched between the pressing member 32 and the supporting member 33.
- the volume required to fill the step is appropriately adjusted according to conditions such as the height of the bump 11, the area of the blank region 13B occupied on the main surface 10A of the semiconductor wafer 10, and the thickness of the protective film 20.
- the width W 2 of the edge of the protective film 20 in a plan view is not particularly limited, but is generally used from the viewpoint of reducing the amount of the protective film 20 to be discarded as a surplus. It is more preferable that the amount does not protrude further outward from the peripheral edge of the support surface 33A.
- the amount of protrusion of the edge of the protective film 20 is the width of the length between the position corresponding to the peripheral edge of the main surface 10A on the protective film 20 and the outer peripheral edge of the protective film 20 in the above plan view.
- the width W 2 is preferably 0.5 ⁇ 10 mm, more preferably 1 ⁇ 8 mm, more preferably 1.5 ⁇ 6 mm.
- the sticking step S2 includes a compression step S3 for compressing the protective film 20 in the thickness direction thereof.
- the execution timing of the compression step S3 in the sticking step S2 is not particularly limited, and for example, the start time of the compression step S3 is the start of the sticking step S2, the end of the compression step S3, and the end of the sticking step S2. At substantially the same time, the end of the compression step S3 can be before the end of the attachment step S2.
- the protective film 20 is heated by using the heating mechanism of the sticking device 30, so that the meat portion (concavo-convex absorption layer 23) of the protective film 20 is suitably deformed in the compression step S3. Can be done.
- the heating temperature of the protective film 20 may be set to a temperature at which the uneven absorption layer 23 can be suitably deformed according to the storage elastic modulus G'of the uneven absorption layer 23 described above, and is not particularly limited.
- the heating temperature of the protective film 20 is preferably 50 to 200 ° C, more preferably 60 to 100 ° C, still more preferably 70 to 70, as long as it is in the range of the storage elastic modulus G'of the uneven absorption layer 23 described above. It is 90 ° C.
- the edge portion of the protective film 20 is supported by the support member 33, and this edge portion is sandwiched between the support member 33 and the pressing member 32. Compress by.
- the compressive force when compressing the edge of the protective film 20 can be set by the pressing force of the pressing member 32.
- the specific pressing force is preferably 0.3 to 2 MPa, more preferably 0.3 to 2 MPa, from the viewpoint that the edge portion of the protective film 20 can be suitably compressed and the semiconductor wafer 10 is prevented from cracking or cracking. It is 0.4 to 1.5 MPa, more preferably 0.5 to 1 MPa.
- the meat portion (concavo-convex absorption layer 23) of the protective film 20 sandwiched between the pressing member 32 and the bump 11 and crushed in the thickness direction is bumped. It is deformed according to the unevenness of 11 to fill the unevenness. Then, a part of the meat portion of the protective film 20 crushed in the thickness direction flows onto the blank region 13B of the second region 13 as shown by the arrow on the right side in FIG. 6, and the blank region surface 101A Increase the amount of meat in the protective film 20 above.
- the edge portion of the protective film 20 sandwiched between the support member 33 and the pressing member 32 and compressed in the thickness direction is a meat portion (concavo-convex absorption layer) as shown by an arrow on the left side in FIG.
- the amount of meat of the protective film 20 on the blank region surface 101A is increased by flowing the 23) so as to be squeezed onto the blank region surface 101A.
- the edge portion of the protective film 20 compressed in the thickness direction is further extended from the peripheral edge of the second region 13 by restricting the flow of the meat portion from the blank region surface 101A by the support member 33 and the pressing member 32. Prevents the meat from escaping to the outside.
- the protective film 20 on the blank region surface 101A has sufficient meat to fill the step over the entire second region 13 by the meat portion flowing into the protective film 20 from the first region 12 and the compressed edge portion. The amount is satisfied. In this way, the protective film 20 on the blank region surface 101A to which the amount of meat is satisfied fills the step over the entire second region 13 by increasing the wall thickness. Further, since the surface of the protective film 20 is in a state of being pressed by the pressing member 32, it is made a flat surface following the pressing surface 32A without being affected by the flow of the meat portion.
- the semiconductor wafer 10 on which the protective film 20 is attached to the main surface 10A is taken out from the attachment device 30, and a surplus portion such as an edge of the compressed protective film 20 is cut off.
- the step is filled by the thick portion of the protective film 20 being thickly offset on the blank region surface 101A.
- the blank region 13B has been described as the second region 13, but similarly to the blank region 13B, the meat portion of the protective film 20 is thicker on the second region 13 in the peripheral region 13A as well.
- the step is filled by shifting. Then, the surface of the protective film 20 attached to the semiconductor wafer 10 becomes a uniform flat surface as a whole without forming defects following the steps of the semiconductor wafer 10.
- the above-mentioned main attachment method has been described by taking as an example a blank area 13B mainly used as an identification area as shown in FIGS. 1 (a) and 1 (b).
- the same effect can be obtained in the blank area 13B as shown in (b). That is, this bonding method is particularly useful when the target semiconductor wafer 10 has a blank region 13B having a flat blank region surface 101A in the second region 13 where bumps are not arranged. Is.
- Pasting method This sticking method is a second embodiment according to the first invention.
- the present attachment method (second embodiment) is included in the method for manufacturing a semiconductor component according to the second invention, similarly to the first embodiment.
- the semiconductor wafer 10 and the protective film 20 used in the present attachment method are as described in the above [2] semiconductor wafer and the above [3] protective film, and the description thereof will be omitted.
- the sticking method of the second embodiment is different from the above-mentioned first embodiment in the arrangement step and the compression step.
- the placement step and the compression step of this sticking method will be described.
- (1) Arrangement Step In the arrangement step S1 described above, as shown in FIG. 13A, the protective film is provided so that the edge portion (peripheral portion) of the protective film 20 is located on the inner peripheral side of the support member 33. It can be a step of arranging 20. In this arrangement step S1, the edge portion of the protective film 20 is not placed on the support surface 33A of the support member 33.
- step S1 in order to block the bulge of the protective film 20 in the outer peripheral direction of the second region 13 generated in the compression step S3, which will be described later, with the inner peripheral surface of the support member 33, the protective film 20 and the edge portion of the protective film 20 It is desirable to make the distance between the support member 33 and the inner peripheral surface in a plan view as short as possible.
- the distance between the edge of the protective film 20 and the inner peripheral surface of the support member 33 in a plan view is preferably less than 1 mm, more preferably 0.5 mm or less, still more preferably 0.3 mm or less. is there.
- the distance between the edge of the protective film 20 and the inner peripheral surface of the support member 33 in a plan view is 0 mm, that is, the edge of the protective film 20 contacts the inner peripheral surface of the support member 33. It is in a state of doing.
- the compression step S3 is a step of compressing the edge portion of the protective film 20 by the pressing surface 32A of the pressing member 32, the inner peripheral surface of the support member 33, and the main surface 10A of the semiconductor wafer 10. Then, the second region 13 is filled with a step over the entire edge of the compressed protective film 20.
- the semiconductor wafer 10 to which the protective film 20 is attached by this attachment method is made to have a desired thinness in the backgrinding process, is separated into individual pieces, and is subjected to various processes to obtain semiconductor parts from the semiconductor wafer 10. Is manufactured. That is, this sticking method is included in the manufacturing method of semiconductor parts.
- the edge portion of the protective film 20 is formed between the support member 33 and the pressing member 32.
- the protective film 20 is formed on the inner peripheral surface of the support member 33 without compressing the edge portion of the protective film 20 between the support member 33 and the pressing member 32.
- the protective film 20 blocks the bulge.
- the effect of this difference can be more pronounced when the protective film 20 has a layer capable of exhibiting fluidity or plasticity, that is, an uneven absorption layer 23.
- the protective film 20 has a layer (concavo-convex absorption layer 23) capable of exhibiting fluidity or plasticity, and the attachment method of the first embodiment is carried out, the layer constituting the edge portion.
- the method of attaching the first embodiment is to apply the uneven absorption layer 23 of the protective film 20 from both the inner peripheral edge portion and the outer peripheral edge portion of the peripheral edge portion surrounding the second region 13. By pushing it out to the area 13, the step is filled.
- the protective film 20 has a layer (concavo-convex absorption layer 23) capable of exhibiting fluidity or plasticity, and the sticking method of the second embodiment is carried out, the edge portion is formed.
- the layer (concavo-convex absorption layer 23) cannot be flowed and extruded into the second region 13 of the main surface 10A, and it is necessary to replenish the amount of meat only by the amount extruded from the first region 12.
- the method of attaching the second embodiment is to extrude the uneven absorption layer 23 of the protective film 20 from only the inner peripheral edge portion of the peripheral edge portion surrounding the second region 13 into the second region 13. So, the step is filled.
- the first embodiment is outside the second region 13 in order to fill the step in the second region 13.
- the layer (concavo-convex absorption layer 23) constituting the edge portion of the above can be used, the semiconductor wafer 10 having a larger blank region 13B can also be used, which is more advantageous than the second embodiment.
- Pasting method (third embodiment) This sticking method is a third embodiment according to the fourth invention.
- the semiconductor wafer 10 used in the present attachment method (third embodiment) is the same as that provided in the attachment method of each of the above-described embodiments, and the details thereof are described in the above-mentioned [2] semiconductor wafer. Since it is as described in the above, the description thereof will be omitted.
- the protective film 20 used in the present attachment method (third embodiment) is the same as that provided in the attachment method of each of the above-described embodiments, and the details thereof are described in the above [3] protective film. Since it is as described in the above, the description thereof will be omitted. That is, the protective film 20 is also a protective film according to the sixth invention.
- the present attachment method includes a processing step S11 (see FIGS. 14A and 14B) for processing the protective film 20 to obtain a processed film 20A, and a main surface 10A of the semiconductor wafer 10. It is provided with an arrangement step S12 (see FIG. 15) in which the processed film 20A is arranged so as to cover the surface, and a pasting step S13 (see FIG. 16) in which the processed film 20A is pressed against the main surface 10A and adhered.
- the processing step S11 is a step of forming portions having different thicknesses on the protective film 20 to obtain the processed film 20A.
- the arranging step S12 is a step of arranging the region 201 having a relatively thick thickness among the portions having different thicknesses of the processed film 20A corresponding to the second region 13.
- the semiconductor wafer 10 to which the protective film 20 is attached by this attachment method is made to have a desired thinness in the backgrinding process, is separated into individual pieces, and is subjected to various processes to obtain semiconductor parts from the semiconductor wafer 10. Is manufactured. That is, the present attachment method (third embodiment) is included in the method for manufacturing a semiconductor component according to the fifth invention.
- the processing step S11 can be carried out by using a processing apparatus 40 (see FIGS. 14A and 14B) capable of carrying out the processing step S11.
- the protective film 20 is processed so that portions having different thicknesses are formed by causing the meat portion to be offset in the layer (concavo-convex absorption layer 23) that exhibits fluidity or plasticity. , Processed film 20A.
- the arranging step S12 and the sticking step S13 can be carried out by using a sticking device 30 (see FIGS. 15 and 16) capable of carrying out these steps.
- the processed film 20A is arranged on the main surface 10A so that the region 201 having a relatively thick thickness among the portions having different thicknesses is located on the blank region surface 101A. ..
- the sticking step S13 the processed film 20A is pressed against the main surface 10A by the pressing member 32, and the meat portion (the meat portion () is arranged on the blank region surface 101A of the main surface 10A and is relatively thick.
- the step of the main surface 10A is filled, and the surface of the protective film 20 (processed film 20A) becomes flat.
- the sticking device 30 used in the arranging step S12 and the sticking step S13 of this sticking method is substantially the same as the sticking device 30 used in the sticking methods of the first and second embodiments described above.
- a device having a chuck table 31, a pressing member 32, a supporting member 33, and the like can be used.
- the details of the sticking device 30 are as described in the above [4] sticking device, and thus the description thereof will be omitted.
- the processing apparatus 40 is not particularly limited as long as it has a configuration capable of executing the processing step S11.
- the configuration shown below can be exemplified.
- the processing apparatus 40 has a first roller 41 and a second roller 42 arranged so as to face each other with the protective film 20 interposed therebetween.
- the first roller 41 is rotatably supported above the protective film 20 so as to come into contact with the base layer 21 of the protective film 20.
- the second roller 42 is rotatably supported below the protective film 20 so as to come into contact with the adhesive layer 22 of the protective film 20.
- a plurality of convex portions 43 are convexly provided on the peripheral surface of the second roller 42.
- the material, drive system, configuration, and the like of the first roller 41, the second roller 42, and the convex portion 43 are not particularly limited as long as they can process the protective film 20.
- a protective film 20 is supplied between the first roller 41 and the second roller 42 of the processing apparatus 40, and the protective film 20 is used. This is a step of feeding out from between the 1st roller 41 and the 2nd roller 42 in the traveling direction indicated by the arrow in FIG. 14A.
- the protective film 20 sent out from between the first roller 41 and the second roller 42 is a processed film 20A in which portions having different thicknesses are formed.
- the shape of the protective film 20 supplied to the processing apparatus 40 is not particularly limited, and any of a circular shape, a square shape, a rectangular shape, and a strip shape can be used in a plan view.
- the supply method of the protective film 20 is not particularly limited, and either a batch type in which the protective film 20 is supplied one by one or a continuous type in which the protective film 20 is continuously supplied can be used.
- the shape of the protective film 20 supplied is a circular shape in a plan view corresponding to the main surface 10A, and the supply method of the protective film 20 is a batch method. is there.
- the first roller 41 and the second roller 42 are rotated, respectively.
- the second roller 42 has a convex portion 43 convexly provided on its peripheral surface, and as shown in FIG. 14B, the convex portion 43 is brought into contact with the protective film 20 as it rotates. The portion of the protective film 20 in contact with the convex portion 43 is crushed in the thickness direction between the convex portion 43 and the first roller 41.
- the meat portion (concave and convex absorbing layer 23) of the crushed portion of the protective film 20 flows to a portion adjacent to the crushed portion and is offset. , Increase the amount of meat in the adjacent part.
- the protective film 20 is formed with portions having different thicknesses so that the crushed portion is thin and the portion adjacent to the crushed portion is thick, so that the processed film 20A can be obtained.
- the processed film 20A has a region 201 having a relatively thick thickness among the portions having different thicknesses, and the region 201 having a relatively thick thickness is used in the arrangement step S12.
- the pressing member 32 is brought close to the main surface 10A of the semiconductor wafer 10 in a state where the edge portion of the protective film 20 is supported by the supporting member 33. This is a step of pressing the protective film 20 against the main surface 10A with the pressing member 32 to attach the protective film 20.
- the sticking step S13 on the first region 12 of the main surface 10A, the meat portion (concavo-convex absorption layer 23) of the processed film 20A sandwiched between the pressing member 32 and the bump 11 and crushed in the thickness direction is formed. , Deforms according to the unevenness of the bump 11, and fills the unevenness.
- the edge portion of the protective film 20 is sandwiched between the support member 33 and the pressing member 32, so that the flow of the meat portion from the blank region surface 101A to the edge portion of the protective film 20 is restricted. , The meat portion is prevented from being released further outward from the peripheral edge of the second region 13. Then, a part of the meat portion of the processed film 20A crushed in the thickness direction flows onto the blank region 13B of the second region 13 as shown by an arrow in FIG. 16, and on the blank region surface 101A. Increase the amount of meat in the processed film 20A.
- the region 201 having a relatively thick thickness was arranged on the blank region surface 101A in the arranging step S12 (see FIG. 15), it is on the first region 12 in the sticking step S13.
- the amount of the processed film 20A on the blank region surface 101A is further increased by adding the flow component from (see FIG. 16).
- the portion adjacent to the region 201 having a relatively thick thickness is crushed and thinned in the processing step S11 described above, so that the crushed and thinned portion is used. It is possible to prevent the meat portion from being released further outward from the peripheral edge of the second region 13 through the structure.
- the portion crushed and thinned in the processing step S11 is sandwiched between the support member 33 and the pressing member 32, so that the meat portion is further outward from the peripheral edge of the second region 13. It can be prevented from being escaped.
- the region 201 having a relatively thick thickness corresponds to the second region 13, and the meat portion flows in from above the first region 12 to fill the step over the entire second region 13. Sufficient enough meat to be served. Then, the processed film 20A on the blank region surface 101A to which the wall thickness is satisfied fills the step over the entire second region 13 by increasing the wall thickness. Further, since the surface of the processed film 20A is in a state of being pressed by the pressing member 32, it is made a flat surface following the pressing surface 32A without being affected by the flow of the meat portion.
- the blank region 13B has been described as the second region 13, but similarly to the blank region 13B, the meat portion of the processed film 20A is thickly offset on the second region 13 in the peripheral region 13A as well.
- the step is filled by that.
- the blank area 13B is not limited to the one mainly used as the identification area as shown in FIGS. 1A and 1B, but the blank area 13B as shown in FIGS. 11A and 11B.
- this bonding method is particularly useful when the target semiconductor wafer 10 has a blank region 13B having a flat blank region surface 101A in the second region 13 where bumps are not arranged. Is.
- the surface of the protective film 20 attached to the semiconductor wafer 10 becomes a uniform flat surface as a whole without forming defects following the steps of the semiconductor wafer 10.
- the sticking method including the present processing step is the fourth embodiment according to the fourth invention.
- This pasting method (fourth embodiment) is the same as the above-described third embodiment except for the processing device 40 and the processing step S11 using the processing device 40, and the processing device 40 and the processing step. Detailed description other than S11 will be omitted.
- the sticking method (fourth embodiment) including the present processing step is included in the method for manufacturing semiconductor parts according to the fifth invention, similarly to the third embodiment. Further, the semiconductor wafer 10 and the protective film 20 used in the sticking method including the present processing step (fourth embodiment) are used in the sticking method of each of the above-described embodiments including the third embodiment. It is the same as the one, and the details thereof will be omitted.
- the processing apparatus 40 is a semiconductor along the outer peripheral edge of the second region 13 of the semiconductor wafer 10 supported and fixed to the chuck table 31. It has a support column 45 erected on the side of the wafer 10 and a pressing body 46 arranged so as to face each other in the vertical direction with a protective film 20 sandwiched between the support column 45.
- the support pillar 45 supports the edge of the protective film 20 so that the protective film 20 is arranged above the semiconductor wafer 10, and when lowered, the protective film is applied to the main surface 10A of the semiconductor wafer 10. It is configured to bring 20 closer.
- the pressing body 46 is formed in a plate shape, and is configured to descend and approach the support pillar 45.
- the protective film 20 supported by the supporting column 45 is crushed and processed by being sandwiched between the supporting column 45 and the pressing body 46.
- the material, drive system, and the like of the support column 45 and the pressing body 46 are not particularly limited as long as the protective film 20 can be processed.
- the processing step S11 using the above-mentioned processing apparatus 40 will be described.
- the protective film 20 is crushed in the thickness direction between the support column 45 and the pressing body 46.
- the meat portion (concavo-convex absorption layer 23) of the crushed portion of the protective film 20 flows to a portion adjacent to the crushed portion and is offset to the crushed portion. Increase the amount of meat in the part.
- the protective film 20 is formed with portions having different thicknesses so that the crushed portion is thin and the portion adjacent to the crushed portion is thick, so that the processed film 20A can be obtained.
- the processed film 20A has a region 201 having a relatively thick thickness among the portions having different thicknesses, and the support column 45 is a semiconductor wafer 10 at the position of the region 201 having a relatively thick thickness. Since it is provided along the outer peripheral edge of the second region 13 of the above, it corresponds to the second region 13. Therefore, in this processing step S11, as shown by an arrow in FIG. 17B, the support column 45 is lowered to form a region 201 in which the thickness of the processed film 20A is relatively thick with respect to the blank region surface 101A. By arranging it above, the arrangement step S12 can be included and executed.
- Protective film As the protective film 20, a film attached to a 12-inch ring frame was used.
- the structure of the protective film 20, the base layer 21, the adhesive layer 22, and the uneven absorption layer 23 are as follows.
- Base layer 21 Material Polyethylene terephthalate film, Thickness: 75 ⁇ m.
- Adhesive layer 22 Material: UV curable acrylic adhesive, Thickness: 10 ⁇ m.
- Concavo-convex absorption layer 23 Material: Thermoplastic ethylene / ⁇ -olefin copolymer (density: 0.861 g / cm 3 , G'(25): 5.15 MPa, G'(60): 0.14 MPa, melt flow rate ( 190 ° C.): 2.9 g / 10 minutes), thickness: 510 ⁇ m.
- Adhesion of protective film ⁇ Example 1> A vacuum laminator device (product number "TPL-0612W” manufactured by Takatori Co., Ltd.) is prepared, and a support member 33 (thickness: 1 mm, width W 1 : 5 mm) formed in an annular shape in a plan view is placed on the chuck table 31.
- the pressing surface 32A of the pressing member 32 was made of iron.
- the protective film 20 was supplied in a batch manner in the arrangement step S1, and the protective film 20 was arranged so as to cover the main surface 10A of the semiconductor wafer 10.
- the heating temperature of the protective film 20 is set to 80 ° C.
- the pressing force by the pressing member 32 is set to 0.7 MPa
- each step is executed in the order of the attachment step S2 and the compression step S3 to execute the semiconductor wafer.
- the protective film 20 was attached to the main surface 10A of 10. Then, in the peripheral edge portion of the protective film 20, the surplus portion protruding from the outer peripheral edge of the semiconductor wafer 10 was cut off to obtain a sample of Example 1.
- ⁇ Comparative example 1> The protective film 20 is applied to the main surface 10A of the semiconductor wafer 10 in the same manner as in the first embodiment except that the roll sticking device (part number "DR-3000II” manufactured by Nitto Seiki Co., Ltd.) is used and the support member 33 is not used. Was attached, and the excess portion of the peripheral portion of the protective film 20 was excised to obtain a sample of Comparative Example 1.
- ⁇ Comparative example 2> A protective film 20 is attached to the main surface 10A of the semiconductor wafer 10 in the same manner as in the first embodiment except that the pressing surface 32A is made of silicone rubber and the support member 33 is not used, and the peripheral portion of the protective film 20 is attached. The surplus portion of Comparative Example 2 was excised to obtain a sample of Comparative Example 2.
- Example 1 As a result of measuring the vertical position of the surface of the protective film, the following was found from the graph of FIG. In Example 1, there was almost no height difference in the vertical position at any horizontal position, and the surface of the protective film was flat. In Comparative Example 1, the horizontal position is around 4 mm, that is, the vertical position is low in the second region, and the horizontal position is in the range of 7 to 8 mm, that is, the vertical position is high in the first region. From this result, it was found that in Comparative Example 1, a dent was formed on the surface of the protective film in the second region so as to correspond to the step generated between the second region and the first region.
- Comparative Example 2 shows a tendency that the horizontal position is 5 mm or less, that is, the vertical position becomes higher in the second region, while the horizontal position is 7 mm or more, that is, the vertical position is lower in the first region. Shows a tendency to become. From this result, in Comparative Example 2, the protective film bends in a mountain shape in the second region due to the influence of the step generated between the second region and the first region, and the protective film surface in the first region. It was found that a dent was formed.
- the method of attaching the protective film of the present invention is widely used in applications for manufacturing semiconductor parts.
- a semiconductor wafer subjected to a back grind process since it has a characteristic that the surface of a protective film can be suitably flattened, it is suitably used for manufacturing parts having excellent productivity.
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Abstract
Description
保護フィルムは、通常、基層と、粘着材層とを有している。この保護フィルムの一般的な貼着方法として、粘着材層が主面と接触するように保護フィルムを半導体ウエハの主面上に配置した後、貼付ローラ等を使用して基層に所定の力を加え、粘着材層を主面に押し付ける方法が採用されている。
近年、多くの半導体ウエハは、半導体部品の高密度化への要請から、主面にバンプやマイクロエレクトロメカニカルシステム(MEMS)が設けられて、主面が凹凸状になっている。このような凹凸状の主面に上述の一般的な保護フィルムの貼着方法を採用する場合、主面に押し付けられた保護フィルムの表面は、主面の凹凸に倣って凹凸状になってしまい、諸々の不具合が発生してしまう。そこで、保護フィルムとして、凹凸吸収性樹脂層や段差吸収層等を設け、凹凸追従性を向上させることにより、凹凸が表面に生じ難くなるように工夫されている(特許文献1参照)。
例えば、半導体ウエハとして、シリアル番号や製造番号を刻印等する目的で、主面の周縁部にバンプが配されていない領域を故意に設けたものが存在する(図1(a)の「符号13B」を参照)。
そして、上記の半導体ウエハの主面には、凹凸の領域と、平坦な領域との間に、凹凸の領域を高とし、平坦な領域を低とする段差が生じてしまう。
保護フィルム20は、凹凸吸収層23により、第1領域12でバンプ11による凹凸を吸収するには十分以上の樹脂体積量(以下、「肉量」ともいう)を有しているが、第1領域12と第2領域13との間の段差を埋めるには肉量が足りず、段差を埋めきれないことがある。
特に、上述のシリアル番号や製造番号を刻印等する目的で主面10Aに設けられた第2領域13は、サイズ(主面10Aに占める面積)も大きく、このサイズの第2領域13全体で段差を埋めるには、保護フィルム20の肉量が顕著に足りない。
また、図8中に矢印で示したように、保護フィルム20の肉部(凹凸吸収層23)は、半導体ウエハ10の主面10Aの周縁よりも更に外側へ逃げるように流動するが、一般的な貼着方法は、こうした肉部の流動を規制する手段を有していない。
前述したバックグラインド工程で主面を吸着固定する際、欠陥24の部分で保護フィルム20は、チャックテーブルから浮き上がった状態になり、真空が破れやすくなるため、バックグラインド工程でバキュームエラー、すなわち半導体ウエハのチャックテーブルへの吸着不良を発生させる可能性がある。
また、バキュームエラーを発生させない場合でも、欠陥24の部分で保護フィルム20は、チャックテーブルから浮き上がった状態になり、バックグラインド工程の実施時に裏面側から加わる外力を十分に支えることができない。このため、バックグラインド工程実施後の半導体ウエハにクラックや割れ、あるいは目に見えないマイクロクラックが発生する可能性がある。
[1]第1発明の保護フィルムの貼着方法は、半導体ウエハの主面を覆うように保護フィルムを配する配置工程と、前記保護フィルムを前記主面に押し付けて貼着する貼着工程と、を備える保護フィルム貼着方法であって、
前記主面は、バンプが配された第1領域と、該主面の周縁の少なくとも一部を含む領域であるとともに、バンプが配されていない領域である第2領域と、を有し、
前記貼着工程は、前記保護フィルムをその厚さ方向へ圧縮する圧縮工程を含み、
前記圧縮工程は、前記保護フィルムを前記主面へ押し付けるための押圧部材と、前記第2領域の外周縁に沿って設置される支持部材とを使用して行われることを要旨とする。
前記圧縮工程は、前記支持部材に前記縁部を支持させて、前記支持部材と前記押圧部材との間で前記縁部を挟むことにより、前記縁部を圧縮する工程であるものとすることができる。
[3]第1発明の保護フィルムの貼着方法では、前記支持部材において、前記保護フィルムの前記縁部を支持する支持面は、前記主面に対して平行であるか、又は、前記主面側を向くように傾斜されたものとすることができる。
[4]第1発明の保護フィルムの貼着方法では、前記半導体ウエハの前記主面と前記押圧部材の押圧面とのクリアランスをC1とし、前記支持部材の前記支持面と前記押圧部材の前記押圧面とのクリアランスをC2とした場合に、C1>C2であるものとすることができる。
[5]第1発明の保護フィルムの貼着方法では、前記配置工程は、前記保護フィルムの縁部が、前記支持部材よりも内周側に位置するように前記保護フィルムを配する工程であり、前記圧縮工程は、前記押圧部材と前記主面との間で挟むことよる前記保護フィルムの前記第2領域の外周方向への膨出を、前記支持部材の内周面で塞き止め、前記縁部を前記押圧部材と前記支持部材の内周面と前記主面とで圧縮する工程であるものとすることができる。
[7]第1発明の保護フィルムの貼着方法では、前記圧縮工程は、前記保護フィルムを加熱して、前記流動性又は前記可塑性を発現させた状態で行うことができる。
[8]第1発明の保護フィルムの貼着方法では、前記バンプの平均高さをH1とし、前記保護フィルムの平均厚さをH2とした場合に、0.5≦H2/H1であるものとすることができる。
[9]第2発明の半導体部品の製造方法は、第1発明の保護フィルムの貼着方法を含むことを要旨とする。
[10]第3発明の保護フィルムは、第1発明の保護フィルムの貼着方法に利用されることを要旨とする。
半導体ウエハの主面を覆うように前記加工済みフィルムを配する配置工程と、
前記加工済みフィルムを前記主面に押し付けて貼着する貼着工程と、を備える保護フィルム貼着方法であって、
前記主面は、バンプが配された第1領域と、該主面の周縁の少なくとも一部を含んで、バンプが配されていない領域である第2領域と、を有し、
前記加工工程は、前記保護フィルムに厚さの異なる部位を形成して前記加工済みフィルムを得る工程であり、
前記配置工程は、前記加工済みフィルムの前記厚さの異なる部位のうちの厚さが相対的に厚い領域を、前記第2領域に対応させて配置する工程であることを要旨とする。
[12]第4発明の保護フィルムの貼着方法では、前記保護フィルムは、流動性又は可塑性を発現できる層を有することができる。
[13]第4発明の保護フィルムの貼着方法では、前記加工工程は、前記保護フィルムを加熱して、前記流動性又は前記可塑性を発現させた状態で行うことができる。
[14]第4発明の保護フィルムの貼着方法では、前記バンプの平均高さをH1とし、前記保護フィルムの平均厚さをH2とした場合に、0.5≦H2/H1であるものとすることができる。
[15]第5発明の半導体部品の製造方法は、第4発明の保護フィルムの貼着方法を含むことを要旨とする。
[16]第6発明の保護フィルムは、第4発明の保護フィルムの貼着方法に利用されることを要旨とする。
第3発明及び第6発明の保護フィルムによれば、半導体ウエハの主面の段差に起因する不具合の発生を抑制することができる。その結果、効率良く半導体部品の製造を行うことができる。
本貼着方法は、第1発明に係る第1の実施形態であり、半導体ウエハ10の主面10Aを保護する保護フィルム20の貼着方法である。
この貼着方法は、半導体ウエハ10の主面10Aを覆うように保護フィルム20を配する配置工程S1(図4(b)参照)と、保護フィルム20を主面10Aに押し付けて貼着する貼着工程S2(図5参照)と、を備える。
半導体ウエハ10の主面10Aは、バンプ11が配された第1領域12と、主面10Aの周縁の少なくとも一部を含む領域であるとともに、バンプ11が配されていない領域である第2領域13と、を有する(図1(a),(b)参照)。
そして、貼着工程S2は、保護フィルム20をその厚さ方向へ圧縮する圧縮工程S3を含む(図6参照)。この圧縮工程S3は、保護フィルム20を主面10Aへ押し付けるための押圧部材32と、第2領域13の外周縁に沿って設置される支持部材33とを使用して行われる。
すなわち、本貼着方法(第1の実施形態)は、第2発明に係る半導体部品の製造方法に含まれるものである。
本貼着方法は、配置工程S1、貼着工程S2及び圧縮工程S3を実行可能な貼着装置30(図3参照)を使用して実施することができる。
上記の押圧部材32及び支持部材33は、貼着装置30に設けることができる。
圧縮工程S3において、厚さ方向へ圧縮された保護フィルム20は、流動性又は可塑性を発現する層(凹凸吸収層23)が段差や凹凸に応じて適宜流動し、段差や凹凸を埋めるような肉部の片寄りを発生させる。
また、押圧部材32及び支持部材33を使用して圧縮工程S3を行う場合、主面10Aの周縁よりも更に外側へ向かおうとする保護フィルム20の肉部の流動が規制される。
そして、上記のように保護フィルム20の肉部の流動が規制されることで、主面10Aの第2領域13上に保護フィルム20の肉部(凹凸吸収層23)が厚く片寄ることで、主面10Aの段差が埋まり、保護フィルム20の表面は平坦となる。
本貼着方法に係る半導体ウエハ10は、材料、形状について特に限定されないが、通常は珪素(シリコン)を材料に用いて円板状に形成されている。
図1(a),(b)に示すように、この半導体ウエハ10は、主面10Aに複数のバンプ11を有している。
ここで、主面10Aは、バンプ11を有する半導体ウエハ10におけるバンプ11が設けられた側の全面である。この主面10Aには、半導体ウエハ10の表面と、バンプ11の表面と、が含まれる。また、この半導体ウエハ10において、主面10Aの反対側の面は、裏面とする。
このうち第2領域13は、周縁領域13Aと、ブランク領域13Bと、を有する。
上記のうち、周縁領域13Aは、半導体ウエハ10の周縁をなす領域である(即ち、主面10Aの周縁をなす領域である)。一般に、半導体ウエハ10は、その周縁の欠けや割れを防ぐ目的で、該周縁に面取り部14が設けられており(図1及び図11参照)、この面取り部14を含む領域が周縁領域13Aである。このため、面取り部14を含む周縁領域13Aは、バンプが配されていない。
一方、ブランク領域13Bは、バンプを配することが可能であるが、実際にはバンプが配されていない領域である。具体的に、ブランク領域13Bは、第2領域13から周縁領域13Aを除いた領域である。
なお、第1領域12及び第2領域13を分かり易くするため、これら領域の境界線を図1(a)及び図11(a)中に二点鎖線で示す。
更に、第2領域13を構成する周縁領域13Aの形状は、例えば、第1領域12を内側に囲い込むように、平面視で略円環状にすることができる(図1及び図11参照)。
また、ブランク領域13Bの形状(平面形状)は、図11(a)に例示されるように、第1領域12の周囲を前後左右の四方から取り囲む形状にすることができる。より具体的に、ブランク領域13Bの形状は、4つの円弧形状が連なった形状にすることができる。このようなブランク領域13Bは、例えば、製品化の際にエラーが生じやすい等の理由から、バンプ11が配されない領域として利用できる。
更に、図11(a)のブランク領域13Bは、半導体ウエハ10から切り出すチップのサイズが大きい場合に形成される領域ということもできる。即ち、チップのサイズが小さい場合、第1領域12は、図1(a)の平面視で略円形状になる。一方、チップのサイズが大きい場合、第1領域12は、図11(a)の平面視で略多角形状になる。そして、第1領域12が平面視で略多角形状になると、この第1領域12の周囲を取り囲むように、図11(a)のブランク領域13Bが形成される。図11(a)のブランク領域13Bが形成される場合、チップのサイズは、例えば、100mm2以上である。
なお、以降の文中では、このブランク領域13Bの表面を、「ブランク領域表面101A」と記載する。
主面10Aの全面積に対する第2領域13の面積の比率は、特に限定されず、ブランク領域13Bのサイズ次第で任意に設定することができるが、好ましくは30%未満、より好ましくは23%以下、さらに好ましくは15%以下である。
主面10Aの全面積に対する周縁領域13Aの面積の比率は、特に限定されないが、好ましくは10%以下、より好ましくは8%以下、さらに好ましくは5%以下である。
また、主面10Aの全面積に対するブランク領域13Bの面積の比率は、特に限定されず、任意に設定することができるが、好ましくは20%以下、より好ましくは15%以下、さらに好ましくは10%以下である。
周縁領域13Aとブランク領域13Bとを比較した場合、ブランク領域13Bは、周縁領域13Aに比べて主面10Aの全面積に対する面積の比率が大きいため、周縁領域13Aよりも大きなへこみやくぼみ等が保護フィルム20の表面に形成されやすく、上記の不具合を発生させる可能性が高い。
そこで、これ以降の記載において、第2領域13は、特に断りのない限りブランク領域13Bを挙げて説明する。
本貼着方法で使用される保護フィルム20は、半導体部品の製造方法に用いられるフィルムであり、より具体的には半導体部品の製造方法において、半導体ウエハを所望の薄さにするバックグラインド工程に用いられるフィルムである。
すなわち、本保護フィルムは、第3発明に係る保護フィルムである。
保護フィルム20は、バンプ11による凹凸と第1領域12及び第2領域13の高低差による段差とを解消するという観点から、流動性又は可塑性を発現できる層を有することが好ましい。本実施形態の保護フィルム20は、基層21と粘着材層22との間に、流動性又は可塑性を発現できる層として凹凸吸収層23を有している。
H2/H1の上限について、保護フィルム20が、その肉量で以て、バンプ11による凹凸と第1領域12及び第2領域13の高低差による段差とを吸収して好適に解消するという観点では、特に制限されない。保護フィルム20の平均厚さH2が増すことによる材料のロスを抑制し、更に保護フィルム20の成形性を好適に維持するという観点では、H2/H1は、通常は10以下(H2/H1≦10)、好ましくは5以下(H2/H1≦5)、より好ましくは4以下(H2/H1≦4)である。
尚、平均高さH1は、全バンプ数のうち、無作為に選択された1/10個のバンプの実測高さの平均値であるものとする。また、平均厚さH2は、互いに2cm以上離れるように選択された10ヶ所のフィルムの実測厚さの平均値であるものとする。
(1)基層
基層21は、保護フィルム20の取り扱い性や機械的特性、耐熱性等の特性を向上させることを目的として設けられる層である。
基層21に使用される材料は、バックグラインド工程で半導体ウエハの研削時に加わる外力に耐え得る機械的強度を有するのであれば、特に限定されない。
通常、基層21の材料には、合成樹脂のフィルムが使用される。
これら合成樹脂の中でも、バックグラインド工程で半導体ウエハを好適に保護するという観点から、ポリプロピレン、ポリエチレンテレフタレート、ポリアミド、エチレン・酢酸ビニル共重合体から選択される1種または2種以上が好ましく、ポリエチレンテレフタレート、エチレン・酢酸ビニル共重合体から選択される1種または2種以上がより好ましい。
また、合成樹脂中には添加剤として、可塑剤、軟化剤(鉱油等)、充填剤(炭酸塩、硫酸塩、チタン酸塩、珪酸塩、酸化物(酸化チタン、酸化マグネシウム)、シリカ、タルク、マイカ、クレー、繊維フィラー等)、酸化防止剤、光安定化剤、帯電防止剤、滑剤、着色剤等を添加することができる。これら添加剤は、1種のみを用いてもよく2種以上を併用してもよい。
また、フィルムは、単層フィルム、複数の層を有する多層フィルムの何れも使用することができる。
基層21の厚さは、特に限定されないが、良好な特性を得るという観点から、好ましくは10~200μm、より好ましくは20~150μm、さらに好ましくは30~100μmである。
粘着材層22は、半導体ウエハ10の主面10Aに、保護フィルム20を貼着して固定することを目的として設けられる層である。
粘着材層22の材料は、特に限定されないが、少なくとも粘着主剤を含むものが使用される。この粘着主剤としては、(メタ)アクリル系粘着剤、シリコーン系粘着剤、ウレタン系粘着剤、ゴム系粘着剤等を例示することができる。
また、粘着材層22の材料は、粘着主剤以外に、架橋剤を含むことができる。
エネルギー線硬化型粘着材について、エネルギー線の種類は、特に限定されず、紫外線、電子線、赤外線等が挙げられる。
また、エネルギー線硬化型粘着材は、粘着主剤の他に、分子内に炭素-炭素二重結合を有する化合物と、エネルギー線に反応して硬化性化合物の重合を開始させることができる光重合開始剤と、を含むことができる。硬化性化合物は、分子中に炭素-炭素二重結合を有し、ラジカル重合により硬化可能なモノマー、オリゴマー、ポリマーが好ましい。
粘着材層22の厚さは、特に限定されないが、好適な接着力を発揮しつつ糊残りなく剥離できるという観点から、好ましくは1~50μm、より好ましくは2~45μm、さらに好ましくは3~40μmである。
凹凸吸収層23は、流動性又は可塑性の発現によって奏される凹凸吸収性により、主面10A上に配されたバンプ11による凹凸形状を吸収して、及び、第1領域12及び第2領域13の高低差による段差を埋めて、保護フィルム20の表面を平滑にすることを目的として設けられる層である。
凹凸吸収層23の材料は、流動性又は可塑性の発現による凹凸吸収性を有するものであれば、特に限定されないが、通常、熱可塑性樹脂が使用される。
また、上記した熱可塑性樹脂は、単独で使用してもよく、2種以上を混合して使用してもよい。
凹凸吸収層23の厚さは、バンプ11による凹凸形状と第1領域12及び第2領域13の高低差による段差とに対する凹凸吸収性を発揮できる厚さであれば、特に限定されないが、凹凸吸収性を好適に発揮できるという観点から、好ましくは20μm以上、より好ましくは80μm以上、さらに好ましくは170μm以上である。
凹凸吸収層23の25℃における貯蔵弾性率G’(25)は、保護フィルム20の貼り付け後に、凹凸吸収層23がその形状を保持でき、主面10Aに対する好適な密着性を維持できるという観点から、4.0×106~7.0×106Paが好ましく、より好ましくは4.5×106~6.5×106Paである。
尚、貯蔵弾性率G’は、動的粘弾性測定装置(例えば、レオメトリックス社製、形式「RMS-800」)を用いて、測定周波数1Hz、歪み0.1~3%の条件下、G’(25)は25℃で、貯蔵弾性率G’(60)は60℃で測定される。
保護フィルム20は、上述の基層21、粘着材層22及び凹凸吸収層23を有する構成に限らず、基層21と凹凸吸収層23との間、あるいは凹凸吸収層23と粘着材層22との間に他の層を有する構成とすることができる。
他の層としては、粘着材層22との界面強度を向上する界面強度向上層、粘着材層22の粘着面への低分子量成分の移行を抑制する移行防止層、保護フィルム20の帯電を防止する帯電防止層等が挙げられる。これらは1種のみを用いてもよく2種以上を併用してもよい。
貼着装置30は、配置工程S1、貼着工程S2及び圧縮工程S3を実行可能な構成であれば、特に限定されない。
貼着装置30として、以下に示すような構成を例示することができる。
図3(a),(b)に示すように、貼着装置30は、チャックテーブル31と、チャックテーブル31の上方位置に配された押圧部材32と、チャックテーブル31横に配された支持部材33と、を有している。
チャックテーブル31は、その表面に載置された半導体ウエハ10を支持固定するためのものである。
押圧部材32は、チャックテーブル31に支持固定された半導体ウエハ10の主面10Aへ、保護フィルム20を押し付けるためのものである。
支持部材33は、チャックテーブル31に支持固定された半導体ウエハ10の第2領域13の外周縁に沿って設置され、保護フィルム20の縁部を支持するためのものである。
貼着装置30は、配置工程S1を好適に実行できるという観点から、装置内に保護フィルム20を供給する供給機構を有する構成とすることができる。この供給機構として、フィルム供給ローラ、フィルム供給アーム等を例示することができる。
(1)チャックテーブル
チャックテーブル31は、半導体ウエハ10を支持固定することができるものであれば、種類、構成等について特に限定されない。
チャックテーブル31は、半導体ウエハ10を好適に固定することができるとともに、半導体ウエハ10の汚損や傷付きを防止することができるという観点から、真空吸着テーブルとすることが好ましい。
押圧部材32は、半導体ウエハ10の主面10Aへ保護フィルム20を押し付けることができるものであれば、形状、構成等について特に限定されない。
図3(a),(b)に示した押圧部材32は、円盤状に形成され、チャックテーブル31に支持固定された半導体ウエハ10の上方位置に配されて、この半導体ウエハ10に対して接近又は離間できるように構成されている。
押圧面32Aの硬さは、保護フィルム20を押し付ける際の変形を抑制して押圧面32Aが平坦面であることを維持するという観点から、モース硬度で、好ましくは2.5~8.5、より好ましくは3~7、さらに好ましくは4~6である。
押圧面32Aの材料は、特に限定されないが、上記モース硬度を満たすという観点から、鉄、銅、アルミニウム、スチール鋼、ステンレス鋼、アルミニウム合金等の金属、ガラス、セラミックス等の無機材料を使用することができる。
押圧部材32は、例えば押圧面32Aのみを上記無機材料で形成し、押圧面32A以外の部分は合成樹脂で形成する等の構成とすることができる。
例えば、押圧部材32は、貼着装置30に一端縁が回動自在に取り付けてられ、跳ね下ろした場合は半導体ウエハ10に接近し、跳ね上げた場合は半導体ウエハ10から離間するように構成することができる。
また、押圧部材32は、半導体ウエハ10の厚さ方向に伸びるように貼着装置30に設けられたレール等に昇降自在に取り付けられ、下降した場合は半導体ウエハ10に接近し、上昇した場合は半導体ウエハ10から離間するように構成することができる。
また、押圧部材32はチャックテーブル31の上方位置に固定されており、チャックテーブル31を昇降自在に構成して、チャックテーブル31が上昇した場合は押圧部材32に半導体ウエハ10が接近し、チャックテーブル31が下降した場合は押圧部材32から半導体ウエハ10が離間するように構成することができる。
支持部材33は、圧縮工程S3で保護フィルム20を圧縮できるのであれば、構成等について特に限定されない。
支持部材33の形状は、半導体ウエハ10の第2領域13の外周縁に沿って設置することができるとともに、圧縮工程S3を好適に実行できるのであれば、特に限定されない。このような形状として、平面視で円環状、扇状、弧状等が例示できる。
支持部材33の材料は、押圧部材32とともに保護フィルム20を挟んで圧縮することができるのであれば、特に限定されない。このような材料として、押圧部材32で挙げた金属等の無機材料の他に、エンジニアリングプラスチックやスーパーエンジニアリングプラスチック等の熱可塑性樹脂、熱硬化性樹脂等が例示できる。
なお、支持部材33の形状を平面視で扇状、弧状等とした場合には、第2領域13の中でも特にブランク領域13Bの外周縁に沿って支持部材33を設置することが好ましい。
段差を埋めるために要する体積は、バンプ11の高さ、半導体ウエハ10の主面10A上に占めるブランク領域13Bの面積、保護フィルム20の厚み等の条件に応じて適宜調節される。
このため、支持部材33の平面視での幅W1は、特に限定されないが、押圧部材32との間で保護フィルム20を確実に挟んで圧縮することができるという観点から、一般的に、好ましくは1~20mm、より好ましくは2~15mm、さらに好ましくは3~10mmである。
あるいは、図9に示すように、支持部材33の支持面33Aは、圧縮工程S3で圧縮された保護フィルム20の縁部の肉(例えば、凹凸吸収層23)を、ブランク領域表面101A上へより好適に移動させるという観点から、半導体ウエハ10の主面10A側を向くように傾斜させてもよい。
なお、上記のクリアランスC1とクリアランスC2は、C1=C2、あるいはC1<C2とすることもできる。C1=C2の場合、支持部材33の支持面33Aは、半導体ウエハ10の第2領域13の表面と同じ高さに配され、C1<C2の場合、支持部材33の支持面33Aは、半導体ウエハ10の第2領域13の表面よりも低い位置に配される。
また、同様に、半導体ウエハ10の厚さ方向における、ブランク領域表面101Aの位置をP1、支持部材33の支持面33Aの位置をP2、これらP1とP2との間の距離をd1(μm)、とした場合において、C1及びC2がC1<C2を満たす場合(図12(b)参照)、0<d2(μm)<400とすることが好ましく、10≦d2(μm)≦300とすることがより好ましく、50≦d2(μm)≦200とすることがより好ましい。
配置工程S1は、図4(a),(b)に示すように、半導体ウエハ10から押圧部材32(図示略)を離間させた状態とし、半導体ウエハ10の主面10A上に保護フィルム20を供給する工程である。
この配置工程S1において、供給された保護フィルム20は、半導体ウエハ10の主面10Aを覆うように配される(図4(b)及び図5参照)。
保護フィルム20の供給方式は、特に限定されず、保護フィルム20を1枚ずつ供給するバッチ式と、保護フィルム20を連続して供給する連続式との何れも使用することができる。
図4(a),(b)に示す配置工程S1では、供給される保護フィルム20の形状は、主面10Aに応じた平面視円形状であり、保護フィルム20の供給方式は、バッチ式である。
保護フィルム20の縁部のはみ出し量は、特に限定されない。このはみ出し量は、圧縮工程S3を確実に行うという観点から、はみ出した縁部を支持部材33の支持面33Aに載せることができる量とすることが好ましい。
段差を埋めるために要する体積は、バンプ11の高さ、半導体ウエハ10の主面10A上に占めるブランク領域13Bの面積、保護フィルム20の厚み等の条件に応じて適宜調節される。
このため、保護フィルム20の縁部のはみ出し量について、その平面視での幅W2は、特に限定されないが、保護フィルム20の余剰分として廃棄等される量を減らすという観点から、一般的に、支持面33Aの周縁から更に外側へはみ出さない量とすることがより好ましい。
具体的に、保護フィルム20の縁部のはみ出し量は、保護フィルム20上で主面10Aの周縁に相応する位置と、保護フィルム20の外周縁との間の長さを上記平面視での幅W2とした場合に、該幅W2が、好ましくは0.5~10mm、より好ましくは1~8mm、さらに好ましくは1.5~6mmである。
貼着工程S2は、図5に示すように、半導体ウエハ10の主面10Aに押圧部材32を接近させ、この押圧部材32で保護フィルム20を主面10Aに押し付けて貼着する工程である。
貼着工程S2は、保護フィルム20をその厚さ方向へ圧縮する圧縮工程S3を含む。
貼着工程S2における圧縮工程S3の実行タイミングは、特に限定されず、例えば圧縮工程S3の開始時が貼着工程S2の開始後、圧縮工程S3の終了時と貼着工程S2の終了時とが略同時、圧縮工程S3の終了時が貼着工程S2の終了前などとすることができる。
保護フィルム20の加熱温度は、上述した凹凸吸収層23の貯蔵弾性率G’に応じて、この凹凸吸収層23を好適に変形させることが可能な温度に設定すればよく、特に限定されない。
具体的に、保護フィルム20の加熱温度は、上述した凹凸吸収層23の貯蔵弾性率G’の範囲であれば、好ましくは50~200℃、より好ましくは60~100℃、さらに好ましくは70~90℃である。
圧縮工程S3は、図6に示すように、保護フィルム20の縁部を支持部材33に支持させて、この縁部を、支持部材33と押圧部材32との間で挟むことにより圧縮する。
保護フィルム20の縁部を圧縮する際の圧縮力は、押圧部材32による加圧力で設定することができる。具体的な加圧力は、保護フィルム20の縁部を好適に圧縮することができるとともに、半導体ウエハ10のひび割れ、クラックの発生を防止するという観点から、好ましくは0.3~2MPa、より好ましくは0.4~1.5MPa、さらに好ましくは0.5~1MPaである。
そして、厚さ方向へ潰れた保護フィルム20の肉部の一部は、図6中に右側の矢印で示したように、第2領域13のブランク領域13B上へ流動して、ブランク領域表面101A上における保護フィルム20の肉量を増やす。
また、厚さ方向へ圧縮された保護フィルム20の縁部は、支持部材33及び押圧部材32がブランク領域表面101A上からの肉部の流動を規制することにより、第2領域13の周縁から更に外側へ肉部が逃がされることを防ぐ。
また、保護フィルム20の表面は、押圧部材32によって押圧された状態であるため、肉部の流動に影響されることなく、押圧面32Aに倣って平坦面とされる。
余剰部分が切除された半導体ウエハ10は、図7に示すように、保護フィルム20の肉部がブランク領域表面101A上に厚く片寄ることで段差が埋められている。
また、上述の記載では第2領域13としてブランク領域13Bを挙げて説明を行ったが、このブランク領域13Bと同様にして、周縁領域13Aでも保護フィルム20の肉部が第2領域13上に厚く片寄ることで段差が埋められている。
そして、半導体ウエハ10に貼着された保護フィルム20の表面は、半導体ウエハ10の段差に倣った欠陥が形成されることなく、全体で一様な平坦面となる。
すなわち、本貼着方法は、対象となる半導体ウエハ10が、バンプが配されていない領域である第2領域13に、平坦状のブランク領域表面101Aを有するブランク領域13Bが存在する場合、特に有用である。
本貼着方法は、第1発明に係る第2の実施形態である。
本貼着方法(第2の実施形態)は、第1の実施形態と同様に、第2発明に係る半導体部品の製造方法に含まれるものである。
本貼着方法に供される半導体ウエハ10及び保護フィルム20は、上記[2]半導体ウエハ及び上記[3]保護フィルムに記載した通りであり、説明を省略する。
(1)配置工程
上述した配置工程S1は、図13(a)に示すように、保護フィルム20の縁部(周縁部)が、支持部材33よりも内周側に位置するように、保護フィルム20を配する工程とすることができる。この配置工程S1において、保護フィルム20の縁部は、支持部材33の支持面33Aに載せられていない。
この配置工程S1では、後述する圧縮工程S3で発生する保護フィルム20の第2領域13の外周方向への膨出を支持部材33の内周面で塞き止めるため、保護フィルム20の縁部と支持部材33の内周面との間の平面視での距離を、可能な限り短くすることが望ましい。
具体的に、保護フィルム20の縁部と支持部材33の内周面との間の平面視での距離は、好ましくは1mm未満、より好ましくは0.5mm以下、さらに好ましくは0.3mm以下である。そして、最も好ましくは、保護フィルム20の縁部と支持部材33の内周面との間の平面視での距離が0mm、つまりは保護フィルム20の縁部が支持部材33の内周面に接触する状態である。
上記配置工程S1の後の圧縮工程S3では、押圧部材32と主面10Aとの間で挟まれた保護フィルム20が、その縁部(周縁部)から肉部(凹凸吸収層23)を第2領域13の外周方向へ膨出させようとする。この肉部(凹凸吸収層23)の膨出は、図13(b)中に左側の矢印で示したように、支持部材33の内周面で塞き止められる。
保護フィルム20の縁部は、支持部材33の内周面で塞き止められた肉部(凹凸吸収層23)がブランク領域表面101A上に留まるとともに、第1領域12からブランク領域表面101A上へ肉部が流入することにより、第2領域13全体にわたって段差を埋めることが可能な肉量を充足される。
ブランク領域表面101A上の保護フィルム20の縁部は、肉量が充足されることによって肉厚を増している。このため、圧縮工程S3は、押圧部材32の押圧面32Aと、支持部材33の内周面と、半導体ウエハ10の主面10Aとによって、保護フィルム20の縁部を圧縮する工程となる。そして、第2領域13は、圧縮された保護フィルム20の縁部によって、その全体にわたって段差を埋められる。
本貼着方法は、第4発明に係る第3の実施形態である。
本貼着方法(第3の実施形態)に供される半導体ウエハ10は、上述の各実施形態の貼着方法に供されるものと同じであり、その詳細については、上記[2]半導体ウエハに記載した通りであるため、説明を省略する。
本貼着方法(第3の実施形態)に供される保護フィルム20は、上述の各実施形態の貼着方法に供されるものと同じであり、その詳細については、上記[3]保護フィルムに記載した通りであるため、説明を省略する。すなわち、保護フィルム20は、第6発明に係る保護フィルムでもある。
加工工程S11は、保護フィルム20に厚さの異なる部位を形成して、加工済みフィルム20Aを得る工程である。
そして、配置工程S12は、加工済みフィルム20Aの厚さの異なる部位のうちの厚さが相対的に厚い領域201を、第2領域13に対応させて配置する工程である。
すなわち、本貼着方法(第3の実施形態)は、第5発明に係る半導体部品の製造方法に含まれるものである。
加工工程S11において、保護フィルム20は、流動性又は可塑性を発現する層(凹凸吸収層23)で肉部の片寄りを発生させることで、厚さの異なる部位が形成されるように加工されて、加工済みフィルム20Aとされる。
配置工程S12において、加工済みフィルム20Aは、厚さの異なる部位のうち、厚さが相対的に厚い領域201が、ブランク領域表面101A上に位置するようにして、主面10A上に配置される。
貼着工程S13において、加工済みフィルム20Aは、押圧部材32によって主面10Aに押し付けられるとともに、主面10Aのブランク領域表面101A上に配された厚さが相対的に厚い領域201に肉部(凹凸吸収層23)が厚く片寄ることで、主面10Aの段差が埋まり、保護フィルム20(加工済みフィルム20A)の表面は平坦となる。
なお、本貼着方法の配置工程S12及び貼着工程S13で使用される貼着装置30は、上述した第1及び第2の実施形態の貼着方法で使用した貼着装置30とほぼ同様のチャックテーブル31、押圧部材32、支持部材33等を有するものを使用することができる。この貼着装置30の詳細については、上記[4]貼着装置に記載した通りであるため、説明を省略する。
加工装置40は、加工工程S11実行可能な構成であれば、特に限定されない。
加工装置40として、以下に示すような構成を例示することができる。
図13(a),(b)に示すように、加工装置40は、保護フィルム20を挟んで互いに対向するように配置された第1ローラ41と第2ローラ42とを有している。
第1ローラ41は、保護フィルム20の基層21に接触するように、保護フィルム20の上方に回転自在に支持されている。
第2ローラ42は、保護フィルム20の粘着材層22に接触するように、保護フィルム20の下方に回転自在に支持されている。
第2ローラ42の周面には、複数の凸部43が凸設されている。
第1ローラ41、第2ローラ42及び凸部43は、保護フィルム20を加工することができるものであれば、材質、駆動方式、構成等について特に限定されない。
加工工程S11は、図14(a)に示すように、加工装置40の第1ローラ41と第2ローラ42との間に保護フィルム20を供給し、この保護フィルム20を第1ローラ41と第2ローラ42との間から図14(a)中に矢印で示す進行方向へと送り出す工程である。
加工工程S11において、第1ローラ41と第2ローラ42との間から送り出された保護フィルム20は、厚さの異なる部位が形成された加工済みフィルム20Aとされる。
保護フィルム20の供給方式は、特に限定されず、保護フィルム20を1枚ずつ供給するバッチ式と、保護フィルム20を連続して供給する連続式との何れも使用することができる。
図14(a),(b)に示す加工工程S11では、供給される保護フィルム20の形状は、主面10Aに応じた平面視円形状であり、保護フィルム20の供給方式は、バッチ式である。
第2ローラ42は、その周面に凸部43が凸設されており、図14(b)に示すように、回転に伴って保護フィルム20に凸部43を接触させる。
保護フィルム20の凸部43が接触された部位は、この凸部43と第1ローラ41との間で厚さ方向へ押し潰される。
そして、保護フィルム20には、押し潰された部位が薄く、その押し潰された部位と隣接する部位が厚くなるように、厚さの異なる部位が形成されて、加工済みフィルム20Aが得られる。
この加工済みフィルム20Aは、厚さの異なる部位のうち、厚さが相対的に厚い領域201を有しており、配置工程S12では、この厚さが相対的に厚い領域201が利用される。
配置工程S12は、図15に示すように、チャックテーブル31に固定された半導体ウエハ10から押圧部材32を離間させた状態としたうえで、上記加工工程S11で得られた加工済みフィルム20Aを半導体ウエハ10の主面10A上に供給する工程である。
この配置工程S12において、供給された加工済みフィルム20Aは、半導体ウエハ10の主面10Aを覆うように配置される。
また、半導体ウエハ10の横には、第2領域13の外周縁に沿って支持部材33が設置される。
このとき、加工済みフィルム20Aは、厚さが相対的に厚い領域201を第2領域13に対応させることで、その厚さが相対的に厚い領域201がブランク領域表面101Aの上方に位置するように配置される。
貼着工程S13は、図16に示すように、保護フィルム20の縁部を支持部材33に支持させた状態として、半導体ウエハ10の主面10Aに押圧部材32を接近させ、この押圧部材32で保護フィルム20を主面10Aに押し付けて貼着する工程である。
貼着工程S13において、主面10Aの第1領域12上では、押圧部材32とバンプ11との間に挟まれて厚さ方向へ潰れた加工済みフィルム20Aの肉部(凹凸吸収層23)が、バンプ11の凹凸に倣って変形し、この凹凸を埋める。
配置工程S12では、保護フィルム20の縁部が支持部材33及び押圧部材32の間に挟まれることにより、ブランク領域表面101A上から保護フィルム20の縁部への肉部の流動が規制されており、第2領域13の周縁から更に外側へ肉部が逃がされることを防いでいる。
そして、厚さ方向へ潰れた加工済みフィルム20Aの肉部の一部は、図16中に矢印で示したように、第2領域13のブランク領域13B上へ流動し、ブランク領域表面101A上における加工済みフィルム20Aの肉量を増やす。
また、加工済みフィルム20Aにおいて、厚さが相対的に厚い領域201と隣接する部位は、上述した加工工程S11で押し潰されて薄くなっているため、この押し潰されて薄くなっている部位を介して第2領域13の周縁から更に外側へ肉部が逃がされることを抑制することができる。
さらに、貼着工程S13では、加工工程S11で押し潰されて薄くなっている部位を、支持部材33及び押圧部材32の間に挟むことにより、第2領域13の周縁から更に外側へ肉部が逃がされることを防止することができる。
そして、肉量が充足されたブランク領域表面101A上の加工済みフィルム20Aは、肉厚を増すことにより、第2領域13全体にわたって段差を埋める。
また、加工済みフィルム20Aの表面は、押圧部材32によって押圧された状態であるため、肉部の流動に影響されることなく、押圧面32Aに倣って平坦面とされる。
上述の記載では第2領域13としてブランク領域13Bを挙げて説明を行ったが、このブランク領域13Bと同様にして、周縁領域13Aでも加工済みフィルム20Aの肉部が第2領域13上に厚く片寄ることで段差が埋められている。
さらに、ブランク領域13Bは、図1(a),(b)に示したような主に識別領域として利用されるものに限らず、図11(a),(b)に示したようなブランク領域13Bでも同様の効果を得ることができる。
すなわち、本貼着方法は、対象となる半導体ウエハ10が、バンプが配されていない領域である第2領域13に、平坦状のブランク領域表面101Aを有するブランク領域13Bが存在する場合、特に有用である。
そして、半導体ウエハ10に貼着された保護フィルム20の表面は、半導体ウエハ10の段差に倣った欠陥が形成されることなく、全体で一様な平坦面となる。
本加工工程を含む貼着方法は、第4発明に係る第4の実施形態である。この貼着方法(第4の実施形態)は、加工装置40と、該加工装置40を使用した加工工程S11の他は、上述の第3の実施形態と同様であり、加工装置40及び加工工程S11以外の詳細な説明を省略する。
なお、本加工工程を含む貼着方法(第4の実施形態)は、第3の実施形態と同様に、第5発明に係る半導体部品の製造方法に含まれるものである。
また、本加工工程を含む貼着方法(第4の実施形態)に供される半導体ウエハ10及び保護フィルム20は、第3の実施形態を含む上述の各実施形態の貼着方法に供されるものと同じであり、その詳細について説明を省略する。
支持柱45は、半導体ウエハ10の上方位置に保護フィルム20が配されるように、この保護フィルム20の縁部を支持しているとともに、下降することで半導体ウエハ10の主面10Aに保護フィルム20を接近させるように構成されている。
押圧体46は、盤状に形成されており、下降して支持柱45に接近するように構成されている。
そして、支持柱45に支持された保護フィルム20は、押圧体46が下降する際、支持柱45と押圧体46との間に挟まれることにより、押し潰されて加工される。
上述の支持柱45、押圧体46は、保護フィルム20を加工することができるものであれば、材質、駆動方式等について特に限定されない。
図17(a)に示すように、加工工程S11において、保護フィルム20は、支持柱45と押圧体46との間で厚さ方向へ押し潰される。
保護フィルム20の押し潰された部位の肉部(凹凸吸収層23)は、図17(b)に示すように、押し潰された部位と隣接する部位へ流動して片寄ることで、その隣接する部位の肉量を増やす。
そして、保護フィルム20には、押し潰された部位が薄く、その押し潰された部位と隣接する部位が厚くなるように、厚さの異なる部位が形成されて、加工済みフィルム20Aが得られる。
加工済みフィルム20Aは、厚さの異なる部位のうち、厚さが相対的に厚い領域201を有しており、この厚さが相対的に厚い領域201の位置は、支持柱45が半導体ウエハ10の第2領域13の外周縁に沿うように設けられていることから、第2領域13と対応している。
よって、この加工工程S11は、図17(b)中に矢印で示したように、支持柱45を下降させて、加工済みフィルム20Aの厚さが相対的に厚い領域201をブランク領域表面101Aの上方に配置することで、配置工程S12を含めて実行することができる。
[1]保護フィルム
保護フィルム20として、12インチ用リングフレームに貼付したものを使用した。
保護フィルム20の構成、基層21、粘着材層22、凹凸吸収層23は、以下の通りである。
基層21 材質:ポリエチレンテレフタレートフィルム、厚さ:75μm。
粘着材層22 材質:UV硬化型アクリル系粘着剤、厚さ:10μm。
凹凸吸収層23 材質:熱可塑性エチレン・α-オレフィン共重合体(密度:0.861g/cm3、G’(25):5.15MPa、G’(60):0.14MPa、メルトフローレート(190℃):2.9g/10分)、厚さ:510μm。
バンプ11が設けられた半導体ウエハ10として、以下の諸元のものを用いた。
直径:300mm。
厚さ:810μm。
材質:珪素(シリコン)。
バンプ11の平均高さ:200μm。
バンプ11のピッチ:400μm。
非バンプ領域(周縁領域13A):外周から3mm。
非バンプ領域(識別領域としてのブランク領域13B):図1(a)中のL1の長さが90mm、図1(a)中のL2の長さが7mm。
〈実施例1〉
真空ラミネーター装置(タカトリ社製の品番「TPL-0612W」)を用意し、チャックテーブル31上に平面視で円環状に形成された支持部材33(厚さ:1mm、幅W1:5mm)を載置し、押圧部材32の押圧面32Aを鉄製とした。
支持部材33の内側に半導体ウエハ10をセットした後、配置工程S1で保護フィルム20をバッチ式で供給し、この保護フィルム20を半導体ウエハ10の主面10Aを覆うように配置した。
その後、保護フィルム20の加熱温度を80℃に設定するとともに、押圧部材32による加圧力を0.7MPaに設定し、貼着工程S2、圧縮工程S3の順番で各工程を実行して、半導体ウエハ10の主面10Aに保護フィルム20を貼着した。
そして、保護フィルム20の周縁部において、半導体ウエハ10の外周縁からはみ出した余剰部分を切除し、実施例1の試料を得た。
〈比較例1〉
ロール貼付装置(日東精機社製の品番「DR-3000II」)を使用し、支持部材33を使用しなかった他は、実施例1と同様にして、半導体ウエハ10の主面10Aに保護フィルム20を貼着し、保護フィルム20の周縁部の余剰部分を切除して、比較例1の試料を得た。
〈比較例2〉
押圧面32Aをシリコーンゴム製とし、支持部材33を使用しなかった他は、実施例1と同様にして、半導体ウエハ10の主面10Aに保護フィルム20を貼着し、保護フィルム20の周縁部の余剰部分を切除して、比較例2の試料を得た。
半導体ウエハの周縁の端部において、図10の下部の説明図で示した位置を、水平位置0mmと垂直位置0μmとして、所定の水平位置における保護フィルム表面の垂直位置を測定した。その結果を図10の上部にグラフで示す。
なお、図10の下部の説明図は、上部のグラフに対して、水平位置については対応するように描かれており、垂直位置については誇張して描かれている。
実施例1は、何れの水平位置においても垂直位置の高低差がほぼ無く、保護フィルム表面が平坦であった。
比較例1は、水平位置が4mmの辺り、つまり第2領域で垂直位置が低くなり、水平位置が7~8mmの範囲、つまり第1領域で垂直位置が高くなる。この結果から、比較例1では、第2領域と第1領域との間に生じた段差に応じるように、第2領域内で保護フィルム表面にへこみが形成されていることが分かった。
比較例2は、水平位置が5mm以下の範囲、つまり第2領域内で垂直位置が高くなっていく傾向を示す一方で、水平位置が7mm以上の範囲、つまり第1領域内では垂直位置が低くなっていく傾向を示す。この結果から、比較例2では、第2領域と第1領域との間に生じた段差の影響が及ぶことで、第2領域で保護フィルムが山なりに撓み、第1領域内で保護フィルム表面にへこみが形成されていることが分かった。
10A;主面、
11;バンプ、
112A;第1領域主面、113A;第2領域主面、
12;第1領域、
13;第2領域、13A;周縁領域、13B;ブランク領域、
14;面取り部、
20;保護フィルム、
20A;加工済みフィルム、
21;基層、
22;粘着材層、
23;凹凸吸収層、
30;貼着装置、
31;チャックテーブル、
32;押圧部材、32A;押圧面、
33;支持部材、33A;支持面、
40;加工装置、
41;第1ローラ、
42;第2ローラ、
43;凸部、
45;支持柱、
46;押圧体、
S1、S12;配置工程、
S2、S13;貼着工程、
S3;圧縮工程、
S11;加工工程。
Claims (16)
- 半導体ウエハの主面を覆うように保護フィルムを配する配置工程と、前記保護フィルムを前記主面に押し付けて貼着する貼着工程と、を備える保護フィルム貼着方法であって、
前記主面は、バンプが配された第1領域と、該主面の周縁の少なくとも一部を含んで、バンプが配されていない領域である第2領域と、を有し、
前記貼着工程は、前記保護フィルムをその厚さ方向へ圧縮する圧縮工程を含み、
前記圧縮工程は、前記保護フィルムを前記主面へ押し付けるための押圧部材と、前記第2領域の外周縁に沿って設置される支持部材とを使用して行われる、ことを特徴とする保護フィルムの貼着方法。 - 前記配置工程は、前記保護フィルムの縁部が、前記第2領域の前記周縁から外側へはみ出すように前記保護フィルムを配する工程であり、
前記圧縮工程は、前記支持部材に前記縁部を支持させて、前記支持部材と前記押圧部材との間で前記縁部を挟むことにより、前記縁部を圧縮する工程である請求項1に記載の保護フィルムの貼着方法。 - 前記支持部材において、前記保護フィルムの前記縁部を支持する支持面は、前記主面に対して平行であるか、又は、前記主面側を向くように傾斜されている請求項2に記載の保護フィルムの貼着方法。
- 前記半導体ウエハの前記主面と前記押圧部材の押圧面とのクリアランスをC1とし、前記支持部材の前記支持面と前記押圧部材の前記押圧面とのクリアランスをC2とした場合に、C1>C2である請求項3に記載の保護フィルムの貼着方法。
- 前記配置工程は、前記保護フィルムの縁部が、前記支持部材よりも内周側に位置するように前記保護フィルムを配する工程であり、
前記圧縮工程は、前記押圧部材と前記主面との間で挟むことよる前記保護フィルムの前記第2領域の外周方向への膨出を、前記支持部材の内周面で塞き止め、前記縁部を前記押圧部材と前記支持部材の内周面と前記主面とで圧縮する工程である請求項1に記載の保護フィルムの貼着方法。 - 前記保護フィルムは、流動性又は可塑性を発現できる層を有する請求項1から請求項5のうち何れか一項に記載の保護フィルムの貼着方法。
- 前記圧縮工程は、前記保護フィルムを加熱して、前記流動性又は前記可塑性を発現させた状態で行われる請求項6に記載の保護フィルムの貼着方法。
- 前記バンプの平均高さをH1とし、前記保護フィルムの平均厚さをH2とした場合に、0.5≦H2/H1である請求項1から請求項7のうち何れか一項に記載の保護フィルムの貼着方法。
- 請求項1から請求項8のうちの何れか一項に記載の保護フィルムの貼着方法を含むことを特徴とする半導体部品の製造方法。
- 請求項1から請求項8のうちの何れか一項に記載の保護フィルムの貼着方法に利用されることを特徴とする保護フィルム。
- 保護フィルムを加工して加工済みフィルムを得る加工工程と、
半導体ウエハの主面を覆うように前記加工済みフィルムを配する配置工程と、
前記加工済みフィルムを前記主面に押し付けて貼着する貼着工程と、を備える保護フィルム貼着方法であって、
前記主面は、バンプが配された第1領域と、該主面の周縁の少なくとも一部を含んで、バンプが配されていない領域である第2領域と、を有し、
前記加工工程は、前記保護フィルムに厚さの異なる部位を形成して前記加工済みフィルムを得る工程であり、
前記配置工程は、前記加工済みフィルムの前記厚さの異なる部位のうちの厚さが相対的に厚い領域を、前記第2領域に対応させて配置する工程であることを特徴とする保護フィルム貼着方法。 - 前記保護フィルムは、流動性又は可塑性を発現できる層を有する請求項11に記載の保護フィルムの貼着方法。
- 前記加工工程は、前記保護フィルムを加熱して、前記流動性又は前記可塑性を発現させた状態で行われる請求項12に記載の保護フィルムの貼着方法。
- 前記バンプの平均高さをH1とし、前記保護フィルムの平均厚さをH2とした場合に、0.5≦H2/H1である請求項11から請求項13のうち何れか一項に記載の保護フィルムの貼着方法。
- 請求項11から請求項14のうちの何れか一項に記載の保護フィルムの貼着方法を含むことを特徴とする半導体部品の製造方法。
- 請求項11から請求項14のうちの何れか一項に記載の保護フィルムの貼着方法に利用されることを特徴とする保護フィルム。
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EP3951838A4 (en) | 2023-03-01 |
EP3951839A1 (en) | 2022-02-09 |
EP3951838A1 (en) | 2022-02-09 |
CN113614888A (zh) | 2021-11-05 |
KR20210129204A (ko) | 2021-10-27 |
JP6859493B2 (ja) | 2021-04-14 |
WO2020196794A9 (ja) | 2020-12-03 |
US20220153009A1 (en) | 2022-05-19 |
JPWO2020196795A1 (ja) | 2021-05-13 |
KR20210134023A (ko) | 2021-11-08 |
SG11202109557SA (en) | 2021-10-28 |
TW202039260A (zh) | 2020-11-01 |
JPWO2020196794A1 (ja) | 2020-10-01 |
EP3951839A4 (en) | 2023-04-12 |
US20220157626A1 (en) | 2022-05-19 |
TWI822982B (zh) | 2023-11-21 |
WO2020196795A1 (ja) | 2020-10-01 |
SG11202109556QA (en) | 2021-10-28 |
TW202041629A (zh) | 2020-11-16 |
KR102611616B1 (ko) | 2023-12-07 |
CN113632207A (zh) | 2021-11-09 |
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