JP5254896B2 - ディスプレイパネル及びその製造方法 - Google Patents
ディスプレイパネル及びその製造方法 Download PDFInfo
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- JP5254896B2 JP5254896B2 JP2009163880A JP2009163880A JP5254896B2 JP 5254896 B2 JP5254896 B2 JP 5254896B2 JP 2009163880 A JP2009163880 A JP 2009163880A JP 2009163880 A JP2009163880 A JP 2009163880A JP 5254896 B2 JP5254896 B2 JP 5254896B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
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- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
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- 239000004020 conductor Substances 0.000 description 2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
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- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- HKQOBOMRSSHSTC-UHFFFAOYSA-N cellulose acetate Chemical compound OC1C(O)C(O)C(CO)OC1OC1C(CO)OC(O)C(O)C1O.CC(=O)OCC1OC(OC(C)=O)C(OC(C)=O)C(OC(C)=O)C1OC1C(OC(C)=O)C(OC(C)=O)C(OC(C)=O)C(COC(C)=O)O1.CCC(=O)OCC1OC(OC(=O)CC)C(OC(=O)CC)C(OC(=O)CC)C1OC1C(OC(=O)CC)C(OC(=O)CC)C(OC(=O)CC)C(COC(=O)CC)O1 HKQOBOMRSSHSTC-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/341—Short-circuit prevention
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Position Input By Displaying (AREA)
Description
図1は、本発明の第1実施形態による有機発光ディスプレイ装置の一部を概略的に図示する平面図であり、図2は、図1の有機発光ディスプレイ装置を概略的に図示する断面図である。参考までに、図1では、図2に図示された封止基板300が除去された構造を図示している。
図8Aは、本発明の第2実施形態に係る有機発光ディスプレイ装置の封止基板、及びその一面上に形成されている第1パターン層を示す底面図であり、図8Bは、図8Aの有機発光ディスプレイ装置の封止基板、及びその一面上に形成されている第1パターン層並びに第2パターン層を示す底面図であり、図8Cは、図8BのVIII−VIII線に沿って切り取った断面図であり、図8Dは、図8Aの有機発光ディスプレイ装置の封止基板、及びその一面上に形成されている第1パターン層並びに第2パターン層を示す底面斜視図である。
110 データライン
112 接続部
113 タッチパネル駆動用IC
115 出入力配線
120 導電性部材
130 フレキシブル印刷回路基板
200 ディスプレイ部
211 バッファ層
213 ゲート絶縁膜
215 層間絶縁膜
217 平坦化膜
219 画素定義膜
220 薄膜トランジスタ
221 ゲート電極
223 ソース電極及びドレイン電極
227 半導体層
230 有機発光素子
231 画素電極
233B,233G,233R 中間層
235 対向電極
250 シーラント
300,400 封止基板
310,410 第1パターン層
311,411 第1方向パターン部
311a,411a 本体部
311b,411b 連結部
311c,411c 延長部
311d,411d 接続部
311e,411e 開口部
312,421 第2方向パターン部
312a,421a 本体部
312c,321c 延長部
312d,321d 接続部
312e,421e 開口部
320,420 第2パターン層
330,430 第1絶縁層
331 コンタクトホール
340,440 第2絶縁層
421b 連結部
Claims (21)
- 基板と、
前記基板上に形成され、複数個の画素を含むディスプレイ部と、
前記ディスプレイ部上に形成されて、静電容量の変化が発生した位置及び大きさを検出するタッチセンシングユニットと、を含み、
前記タッチセンシングユニットは、
封止基板と、
前記ディスプレイ部と対面する前記封止基板の一面上に形成され、前記複数個の画素と対応する位置に、該画素で発光された光を通過させる複数個の開口部が形成されている静電容量パターン層と、を含み、
前記静電容量パターン層は、マトリックスパターンに配された複数個のパターン部を含み、該複数個のパターン部は、第1方向に延び、列に配された複数個の第1パターン部と、前記第1方向と交差する第2方向に延び、行に配された複数個の第2パターン部とを含むとともに、前記複数個の第1パターン部及び前記複数個の第2パターン部の上に形成される第1絶縁層をさらに含み、
前記複数個の第2パターン部を隣接したパターン部と電気的に連結させるために、前記第1絶縁層上に形成される複数個の連結部をさらに含む、ことを特徴とするディスプレイパネル。 - 前記複数個の第1パターン部は、互いに電気的に連結されていることを特徴とする請求項1に記載のディスプレイパネル。
- 前記複数個の連結部上に形成される第2絶縁層をさらに含むことを特徴とする請求項1に記載のディスプレイパネル。
- 前記第1絶縁層は、前記複数個の第1パターン部及び前記複数個の第2パターン部間にも形成されることを特徴とする請求項1に記載のディスプレイパネル。
- 前記複数個の第2パターン部上に形成される第2絶縁層をさらに含むことを特徴とする請求項4に記載のディスプレイパネル。
- 前記複数個のパターン部それぞれは、四角形であることを特徴とする請求項1に記載のディスプレイパネル。
- 前記複数個のパターン部それぞれは、ダイアモンド形または正四角形であることを特徴とする請求項1に記載のディスプレイパネル。
- 前記複数個の開口部のうち、一開口部は、前記複数個の画素のうち、少なくとも一画素と対応する位置に形成されることを特徴とする請求項1に記載のディスプレイパネル。
- 前記複数個の開口部のうち、前記開口部は、前記複数個の画素のうち、ただ1つの画素と対応する位置に形成されることを特徴とする請求項8に記載のディスプレイパネル。
- 前記画素は、副画素であることを特徴とする請求項9に記載のディスプレイパネル。
- 前記開口部の中心は、前記封止基板の前記面に対して垂直である方向で、前記画素の中心と位置合わせされることを特徴とする請求項9に記載のディスプレイパネル。
- 前記複数個の開口部それぞれは、前記複数個の画素のうち、対応する画素と同じ形状を有することを特徴とする請求項1に記載のディスプレイパネル。
- 前記複数個の開口部のうち、一開口部は、前記複数個の画素のうち、一画素の面積と同一であるか、またはさらに大きい面積を有するように形成されることを特徴とする請求項1に記載のディスプレイパネル。
- 前記複数個の開口部は、前記複数個の画素の配列パターンと対応するパターンに配列されることを特徴とする請求項1に記載のディスプレイパネル。
- 前記複数個の開口部は、前記複数個の画素と同一であるか、または該画素より少数に形成されることを特徴とする請求項1に記載のディスプレイパネル。
- 前記タッチセンシングユニットは、前記静電容量パターン層と前記基板とを電気的に連結するために、前記封止基板の前記面上に形成される複数個の延長部をさらに含むことを特徴とする請求項1に記載のディスプレイパネル。
- 前記複数個の延長部と前記基板とを連結するために、前記基板と前記タッチセンシングユニットとの間に形成される導電性部材をさらに含むことを特徴とする請求項16に記載のディスプレイパネル。
- 前記静電容量パターン層は、ITO、IZO、ZnO、In2O3及びその化合物を含む群から選択された物質を含むことを特徴とする請求項1に記載のディスプレイパネル。
- 前記ディスプレイ部は、有機発光ディスプレイ装置であることを特徴とする請求項1に記載のディスプレイパネル。
- 前記連結部は、前記第1絶縁層に形成されるコンタクトホールを有し、該コンタクトホールを介して前記第2パターン部と電気的に連結されることを特徴とする請求項1に記載のディスプレイパネル。
- タッチセンシングインターフェースを含むディスプレイパネルの製造方法において、
複数個の画素を含み、基板上に形成されるディスプレイ部を具備する段階と、
封止基板の一面上に静電容量の変化が発生した位置及び大きさを検出する静電容量パターン層を形成する段階と、
前記静電容量パターン層で、前記複数個の画素と対応する位置に、該画素で発光された光を通過させる複数個の開口部を形成する段階と、
前記ディスプレイ部を具備する前記基板に、前記ディスプレイ部と前記静電容量パターン層とが対面するように、前記封止基板を合着する段階を含み、
前記静電容量パターン層は、マトリックスパターンに配された複数個のパターン部を含み、該複数個のパターン部は、第1方向に延び、列に配された複数個の第1パターン部と、前記第1方向と交差する第2方向に延び、行に配された複数個の第2パターン部とを含むとともに、前記複数個の第1パターン部及び前記複数個の第2パターン部の上に形成される第1絶縁層をさらに含み、
前記複数個の第2パターン部を隣接したパターン部と電気的に連結させるために、前記第1絶縁層上に形成される複数個の連結部をさらに含む、ことを特徴とするディスプレイパネルの製造方法。
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KR20100010019A (ko) | 2010-01-29 |
EP2148264A2 (en) | 2010-01-27 |
JP2010028115A (ja) | 2010-02-04 |
US20100013745A1 (en) | 2010-01-21 |
CN101635304B (zh) | 2014-09-17 |
JP2011238259A (ja) | 2011-11-24 |
US9772709B2 (en) | 2017-09-26 |
CN103258840B (zh) | 2016-05-04 |
EP2148264A3 (en) | 2011-10-12 |
JP5443442B2 (ja) | 2014-03-19 |
EP2148264B1 (en) | 2015-05-20 |
CN103258840A (zh) | 2013-08-21 |
CN101635304A (zh) | 2010-01-27 |
US20160253017A1 (en) | 2016-09-01 |
KR101050464B1 (ko) | 2011-07-19 |
US9342176B2 (en) | 2016-05-17 |
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