JP5208922B2 - デバイス、及び、電気伝導性接続部の製造方法 - Google Patents
デバイス、及び、電気伝導性接続部の製造方法 Download PDFInfo
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- JP5208922B2 JP5208922B2 JP2009510280A JP2009510280A JP5208922B2 JP 5208922 B2 JP5208922 B2 JP 5208922B2 JP 2009510280 A JP2009510280 A JP 2009510280A JP 2009510280 A JP2009510280 A JP 2009510280A JP 5208922 B2 JP5208922 B2 JP 5208922B2
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- conductor surface
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Wire Bonding (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Combinations Of Printed Boards (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006023683.1 | 2006-05-19 | ||
| DE102006023683 | 2006-05-19 | ||
| DE102006028692.8A DE102006028692B4 (de) | 2006-05-19 | 2006-06-22 | Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium |
| DE102006028692.8 | 2006-06-22 | ||
| PCT/DE2007/000897 WO2007134581A1 (de) | 2006-05-19 | 2007-05-16 | Elektrisch leitende verbindung mit isolierendem verbindungsmedium |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009537970A JP2009537970A (ja) | 2009-10-29 |
| JP2009537970A5 JP2009537970A5 (enExample) | 2011-07-07 |
| JP5208922B2 true JP5208922B2 (ja) | 2013-06-12 |
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| JP2009510280A Expired - Fee Related JP5208922B2 (ja) | 2006-05-19 | 2007-05-16 | デバイス、及び、電気伝導性接続部の製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8102060B2 (enExample) |
| EP (1) | EP2018664A1 (enExample) |
| JP (1) | JP5208922B2 (enExample) |
| KR (1) | KR101367545B1 (enExample) |
| DE (1) | DE102006028692B4 (enExample) |
| TW (1) | TWI357639B (enExample) |
| WO (1) | WO2007134581A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102006023685A1 (de) | 2005-09-29 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102006035627A1 (de) * | 2006-07-31 | 2008-02-07 | Osram Opto Semiconductors Gmbh | LED-Halbleiterkörper |
| US7977799B2 (en) * | 2008-04-30 | 2011-07-12 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Planar packageless semiconductor structure with via and coplanar contacts |
| DE102008030816B4 (de) * | 2008-06-30 | 2019-11-07 | Osram Oled Gmbh | Verfahren zur Herstellung eines Bauteils mit mindestens einem organischen Material |
| DE102011100457A1 (de) | 2011-05-04 | 2012-11-08 | Osram Opto Semiconductors Gmbh | Elektronisches Bauteil mit einem Trägerelement, einer Verbindungsstruktur und einem Halbleiterchip |
| US9337387B2 (en) | 2011-06-15 | 2016-05-10 | Sensor Electronic Technology, Inc. | Emitting device with improved extraction |
| US10522714B2 (en) | 2011-06-15 | 2019-12-31 | Sensor Electronic Technology, Inc. | Device with inverted large scale light extraction structures |
| JP2014517544A (ja) * | 2011-06-15 | 2014-07-17 | センサー エレクトロニック テクノロジー インコーポレイテッド | 大型の逆さ光取り出し構造付の装置 |
| US9741899B2 (en) | 2011-06-15 | 2017-08-22 | Sensor Electronic Technology, Inc. | Device with inverted large scale light extraction structures |
| US10319881B2 (en) | 2011-06-15 | 2019-06-11 | Sensor Electronic Technology, Inc. | Device including transparent layer with profiled surface for improved extraction |
| CN104364898A (zh) * | 2012-05-30 | 2015-02-18 | 奥林巴斯株式会社 | 摄像装置的制造方法以及半导体装置的制造方法 |
| EP2858105A4 (en) | 2012-05-30 | 2016-05-18 | Olympus Corp | IMAGING DEVICE, SEMICONDUCTOR DEVICE AND IMAGING UNIT |
| JP6395600B2 (ja) | 2012-05-30 | 2018-09-26 | オリンパス株式会社 | 撮像装置の製造方法および半導体装置の製造方法 |
| DE102012112988A1 (de) | 2012-12-21 | 2014-07-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Scheinwerfer |
| DE102014115770B4 (de) * | 2014-10-30 | 2018-03-29 | Infineon Technologies Ag | Verfahren zur verbindung eines substrats |
| US9721812B2 (en) * | 2015-11-20 | 2017-08-01 | International Business Machines Corporation | Optical device with precoated underfill |
| US10461221B2 (en) | 2016-01-18 | 2019-10-29 | Sensor Electronic Technology, Inc. | Semiconductor device with improved light propagation |
| DE102016103324A1 (de) | 2016-02-25 | 2017-08-31 | Osram Opto Semiconductors Gmbh | Videowand-Modul und Verfahren zum Herstellen eines Videowand-Moduls |
| KR20220065292A (ko) | 2020-11-13 | 2022-05-20 | 삼성전자주식회사 | 반도체 패키지 및 그의 제조 방법 |
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| US3666588A (en) * | 1970-01-26 | 1972-05-30 | Western Electric Co | Method of retaining and bonding articles |
| DE3001613C2 (de) * | 1980-01-17 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Befestigung eines, eine monolithisch integrierte Halbleiterschaltung enthaltenden Halbleiterkörpers aus Silicium an einer Unterlage mit einem entsprechenden Verfahren hierzu |
| JPS60262430A (ja) * | 1984-06-08 | 1985-12-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| DE4122297A1 (de) | 1991-07-05 | 1993-01-07 | Messerschmitt Boelkow Blohm | Elektronische oder optronische anordnung, insbesondere halbleiter-anordnuung |
| US5354969A (en) * | 1992-05-15 | 1994-10-11 | Nippondenso Co., Ltd. | Positive-temperature-coefficient thermistor heating device and process for production of the same |
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| EP0827632B1 (en) * | 1995-05-22 | 2002-01-09 | Hitachi Chemical Co., Ltd. | Semiconductor device having a semiconductor chip electrically connected to a wiring substrate |
| DE19529490A1 (de) | 1995-08-10 | 1997-02-13 | Fraunhofer Ges Forschung | Chipkontaktierungsverfahren, damit hergestellte elektronische Schaltung und Trägersubstrat zur Kontaktierung von Chips |
| US5684309A (en) | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
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| US5831277A (en) | 1997-03-19 | 1998-11-03 | Northwestern University | III-nitride superlattice structures |
| EP2169733B1 (de) * | 1997-09-29 | 2017-07-19 | OSRAM Opto Semiconductors GmbH | Halbleiterlichtquelle |
| US5861678A (en) * | 1997-12-23 | 1999-01-19 | Micron Technology, Inc. | Method and system for attaching semiconductor dice to substrates |
| EP1505859B1 (en) * | 1998-02-26 | 2007-08-15 | Ibiden Co., Ltd. | Multilayer printed wiring board having filled via-holes |
| DE19955747A1 (de) | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
| US6426565B1 (en) * | 2000-03-22 | 2002-07-30 | International Business Machines Corporation | Electronic package and method of making same |
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| EP1325517A2 (en) * | 2000-09-19 | 2003-07-09 | Nanopierce Technologies Inc. | Method for assembling components and antennae in radio frequency identification devices |
| DE10163799B4 (de) | 2000-12-28 | 2006-11-23 | Matsushita Electric Works, Ltd., Kadoma | Halbleiterchip-Aufbausubstrat und Verfahren zum Herstellen eines solchen Aufbausubstrates |
| DE10149507A1 (de) * | 2001-10-06 | 2003-04-10 | Behr Gmbh & Co | Wärmetauscher, insbesondere Flachrohr-Wärmetauscher eines Kraftfahrzeugs |
| US6962835B2 (en) * | 2003-02-07 | 2005-11-08 | Ziptronix, Inc. | Method for room temperature metal direct bonding |
| DE10319782B4 (de) | 2003-04-30 | 2009-01-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement mit einem Chipträgerelement |
| JP2004349399A (ja) * | 2003-05-21 | 2004-12-09 | Nec Corp | 部品実装基板 |
| DE102004030813B4 (de) | 2004-06-25 | 2007-03-29 | Infineon Technologies Ag | Verfahren zur Verbindung einer integrierten Schaltung mit einem Substrat und entsprechende Schaltungsanordnung |
| JP4565931B2 (ja) * | 2004-08-25 | 2010-10-20 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2006114656A (ja) * | 2004-10-14 | 2006-04-27 | Seiko Epson Corp | 半導体装置、半導体装置の実装構造、及び半導体装置の実装方法 |
-
2006
- 2006-06-22 DE DE102006028692.8A patent/DE102006028692B4/de active Active
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2007
- 2007-05-16 EP EP07722445A patent/EP2018664A1/de not_active Withdrawn
- 2007-05-16 JP JP2009510280A patent/JP5208922B2/ja not_active Expired - Fee Related
- 2007-05-16 WO PCT/DE2007/000897 patent/WO2007134581A1/de not_active Ceased
- 2007-05-16 KR KR1020087030710A patent/KR101367545B1/ko active Active
- 2007-05-16 US US12/301,566 patent/US8102060B2/en active Active
- 2007-05-17 TW TW096117569A patent/TWI357639B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007134581A1 (de) | 2007-11-29 |
| TWI357639B (en) | 2012-02-01 |
| TW200807646A (en) | 2008-02-01 |
| DE102006028692A1 (de) | 2007-11-22 |
| KR20090027639A (ko) | 2009-03-17 |
| US20090302429A1 (en) | 2009-12-10 |
| US8102060B2 (en) | 2012-01-24 |
| KR101367545B1 (ko) | 2014-02-26 |
| JP2009537970A (ja) | 2009-10-29 |
| DE102006028692B4 (de) | 2021-09-02 |
| EP2018664A1 (de) | 2009-01-28 |
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