JP5161351B2 - 不揮発性メモリ装置のマルチページコピーバックプログラム方法 - Google Patents
不揮発性メモリ装置のマルチページコピーバックプログラム方法 Download PDFInfo
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- JP5161351B2 JP5161351B2 JP2011194046A JP2011194046A JP5161351B2 JP 5161351 B2 JP5161351 B2 JP 5161351B2 JP 2011194046 A JP2011194046 A JP 2011194046A JP 2011194046 A JP2011194046 A JP 2011194046A JP 5161351 B2 JP5161351 B2 JP 5161351B2
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- 239000000872 buffer Substances 0.000 claims description 35
- 238000010586 diagram Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 230000004044 response Effects 0.000 description 8
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Description
MB メモリセルブロック
PB ページバッファ
RG レジスタ
Claims (3)
- ワードラインとイブンビットライン及びオッドビットラインそれぞれに接続されるメモリセルからなるセルアレイを含む不揮発性メモリ装置のマルチページコピーバックプログラム方法において、
前記イブン及びオッドビットラインをプリチャージさせる段階と、
前記オッドビットラインがプリチャージ状態に維持される間、選択されたワードラインに接続され、前記イブンビットラインに連結されるイブンメモリセルのプログラム状態に応じて前記イブンビットラインの電圧を変更させるかまたは維持させる段階と、
前記イブンビットラインの電圧による読み出しデータを前記イブンビットラインに連結されるイブンページバッファに格納するイブンデータの読み出し動作を行う間、前記選択されたワードラインに接続され、前記オッドビットラインに連結されるオッドメモリセルのプログラム状態に応じて前記オッドビットラインの電圧を変更させるかまたは維持させる段階と、
前記オッドビットラインの電圧による読み出しデータを前記オッドビットラインに連結されるオッドページバッファに格納するオッドデータの読み出し動作を行う段階と、
前記イブンページバッファそれぞれに格納されたデータと前記オッドページバッファそれぞれに格納されたデータを、前記選択されたワードラインを除いた別の一つのワードラインに接続されるイブンメモリセルとオッドメモリセルに同時にコピーバックプログラムする段階とを含むことを特徴とする不揮発性メモリ装置のマルチページコピーバックプログラム方法。 - 前記イブンおよびオッドビットラインをプリチャージする段階において、
前記イブンページバッファのイブンセンシングノードをプリチャージさせ、前記オッドページバッファそれぞれを用いてオッドセンシングノードをプリチャージさせた後、
前記イブンセンシングノードと前記イブンビットラインとを連結し、前記オッドセンシングノードと前記オッドビットラインとを連結して前記イブンおよびオッドビットラインをプリチャージすることを特徴とする請求項1に記載の不揮発性メモリ装置のマルチページコピーバックプログラム方法。 - 前記オッドデータの読み出し動作を行う間、前記イブンデータの読み出し動作を完了した後の前記イブンビットラインの電圧を維持させることを特徴とする請求項1に記載の不揮発性メモリ装置のマルチページコピーバックプログラム方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2005-0057830 | 2005-06-30 | ||
KR1020050057830A KR100694968B1 (ko) | 2005-06-30 | 2005-06-30 | 비휘발성 메모리 장치와 그것의 멀티-페이지 프로그램,독출 및 카피백 프로그램 방법 |
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JP2005368364A Division JP4927398B2 (ja) | 2005-06-30 | 2005-12-21 | 不揮発性メモリ装置 |
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JP2011243284A JP2011243284A (ja) | 2011-12-01 |
JP5161351B2 true JP5161351B2 (ja) | 2013-03-13 |
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JP2005368364A Expired - Fee Related JP4927398B2 (ja) | 2005-06-30 | 2005-12-21 | 不揮発性メモリ装置 |
JP2011194046A Expired - Fee Related JP5161351B2 (ja) | 2005-06-30 | 2011-09-06 | 不揮発性メモリ装置のマルチページコピーバックプログラム方法 |
JP2011194045A Expired - Fee Related JP5161350B2 (ja) | 2005-06-30 | 2011-09-06 | 不揮発性メモリ装置のマルチページ読み出し方法 |
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JP2005368364A Expired - Fee Related JP4927398B2 (ja) | 2005-06-30 | 2005-12-21 | 不揮発性メモリ装置 |
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Country Status (4)
Country | Link |
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US (1) | US7257027B2 (ja) |
JP (3) | JP4927398B2 (ja) |
KR (1) | KR100694968B1 (ja) |
CN (1) | CN1892909B (ja) |
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KR100694968B1 (ko) | 2007-03-14 |
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JP2011243284A (ja) | 2011-12-01 |
CN1892909A (zh) | 2007-01-10 |
CN1892909B (zh) | 2010-04-14 |
JP2012009134A (ja) | 2012-01-12 |
US20070002621A1 (en) | 2007-01-04 |
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