JP5160225B2 - 再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタの製作方法及び再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタ - Google Patents

再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタの製作方法及び再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタ Download PDF

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JP5160225B2
JP5160225B2 JP2007527194A JP2007527194A JP5160225B2 JP 5160225 B2 JP5160225 B2 JP 5160225B2 JP 2007527194 A JP2007527194 A JP 2007527194A JP 2007527194 A JP2007527194 A JP 2007527194A JP 5160225 B2 JP5160225 B2 JP 5160225B2
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contact
nitride
providing
channel layer
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ウィリアム サクスラー アダム
ピーター スミス リチャード
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Wolfspeed Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/012—Manufacture or treatment of static induction transistors [SIT], e.g. permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007527194A 2004-05-20 2005-02-09 再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタの製作方法及び再成長オーミックコンタクト領域を有する窒化物ベースのトランジスタ Expired - Lifetime JP5160225B2 (ja)

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US10/849,617 2004-05-20
US10/849,617 US7432142B2 (en) 2004-05-20 2004-05-20 Methods of fabricating nitride-based transistors having regrown ohmic contact regions
PCT/US2005/004039 WO2005119787A1 (en) 2004-05-20 2005-02-09 Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions

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JP2007538402A JP2007538402A (ja) 2007-12-27
JP2007538402A5 JP2007538402A5 (https=) 2008-03-21
JP5160225B2 true JP5160225B2 (ja) 2013-03-13

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US (1) US7432142B2 (https=)
EP (1) EP1747589B1 (https=)
JP (1) JP5160225B2 (https=)
KR (1) KR20070032701A (https=)
CN (1) CN1998085B (https=)
CA (1) CA2567066A1 (https=)
TW (1) TW200539264A (https=)
WO (1) WO2005119787A1 (https=)

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