JP5102416B2 - 集積回路中の多孔質絶縁層上に薄膜を形成するための方法、及び集積回路中の多孔質絶縁層上の金属窒化物バリア層の形成方法 - Google Patents

集積回路中の多孔質絶縁層上に薄膜を形成するための方法、及び集積回路中の多孔質絶縁層上の金属窒化物バリア層の形成方法 Download PDF

Info

Publication number
JP5102416B2
JP5102416B2 JP2001144436A JP2001144436A JP5102416B2 JP 5102416 B2 JP5102416 B2 JP 5102416B2 JP 2001144436 A JP2001144436 A JP 2001144436A JP 2001144436 A JP2001144436 A JP 2001144436A JP 5102416 B2 JP5102416 B2 JP 5102416B2
Authority
JP
Japan
Prior art keywords
layer
metal
insulating layer
porous insulating
species
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001144436A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002009078A (ja
JP2002009078A5 (enExample
Inventor
ラーイェーマーカー イボ
ティー． ソイニネン ペッカ
ハー．アー． グランネマン エルンスト
ピー． ハウッカ スビ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM International NV
Original Assignee
ASM International NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM International NV filed Critical ASM International NV
Publication of JP2002009078A publication Critical patent/JP2002009078A/ja
Publication of JP2002009078A5 publication Critical patent/JP2002009078A5/ja
Application granted granted Critical
Publication of JP5102416B2 publication Critical patent/JP5102416B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76844—Bottomless liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2001144436A 2000-05-15 2001-05-15 集積回路中の多孔質絶縁層上に薄膜を形成するための方法、及び集積回路中の多孔質絶縁層上の金属窒化物バリア層の形成方法 Expired - Lifetime JP5102416B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US20423100P 2000-05-15 2000-05-15
US60/204231 2000-05-15
US23577200P 2000-09-26 2000-09-26
US60/235772 2000-09-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012139188A Division JP5554806B2 (ja) 2000-05-15 2012-06-20 複数の開口部を備える基板上への層の蒸着方法

Publications (3)

Publication Number Publication Date
JP2002009078A JP2002009078A (ja) 2002-01-11
JP2002009078A5 JP2002009078A5 (enExample) 2008-12-18
JP5102416B2 true JP5102416B2 (ja) 2012-12-19

Family

ID=26899301

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001144436A Expired - Lifetime JP5102416B2 (ja) 2000-05-15 2001-05-15 集積回路中の多孔質絶縁層上に薄膜を形成するための方法、及び集積回路中の多孔質絶縁層上の金属窒化物バリア層の形成方法
JP2012139188A Expired - Lifetime JP5554806B2 (ja) 2000-05-15 2012-06-20 複数の開口部を備える基板上への層の蒸着方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012139188A Expired - Lifetime JP5554806B2 (ja) 2000-05-15 2012-06-20 複数の開口部を備える基板上への層の蒸着方法

Country Status (2)

Country Link
US (3) US6482733B2 (enExample)
JP (2) JP5102416B2 (enExample)

Families Citing this family (345)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829144B2 (en) * 1997-11-05 2010-11-09 Tokyo Electron Limited Method of forming a metal film for electrode
US6861356B2 (en) * 1997-11-05 2005-03-01 Tokyo Electron Limited Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
US6974766B1 (en) 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US6420262B1 (en) 2000-01-18 2002-07-16 Micron Technology, Inc. Structures and methods to enhance copper metallization
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US7419903B2 (en) * 2000-03-07 2008-09-02 Asm International N.V. Thin films
US6759325B2 (en) * 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US6936538B2 (en) 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6541353B1 (en) * 2000-08-31 2003-04-01 Micron Technology, Inc. Atomic layer doping apparatus and method
US20020036780A1 (en) * 2000-09-27 2002-03-28 Hiroaki Nakamura Image processing apparatus
EP1772534A3 (en) 2000-09-28 2007-04-25 The President and Fellows of Harvard College Tungsten-containing and hafnium-containing precursors for vapor deposition
US9255329B2 (en) * 2000-12-06 2016-02-09 Novellus Systems, Inc. Modulated ion-induced atomic layer deposition (MII-ALD)
CN100366792C (zh) * 2000-12-12 2008-02-06 东京毅力科创株式会社 薄膜形成方法及薄膜形成装置
US6451712B1 (en) * 2000-12-18 2002-09-17 International Business Machines Corporation Method for forming a porous dielectric material layer in a semiconductor device and device formed
US20020089063A1 (en) * 2001-01-08 2002-07-11 Ahn Kie Y. Copper dual damascene interconnect technology
US6555909B1 (en) * 2001-01-11 2003-04-29 Advanced Micro Devices, Inc. Seedless barrier layers in integrated circuits and a method of manufacture therefor
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
WO2002080244A2 (en) 2001-02-12 2002-10-10 Asm America, Inc. Improved process for deposition of semiconductor films
US7563715B2 (en) 2005-12-05 2009-07-21 Asm International N.V. Method of producing thin films
US9139906B2 (en) * 2001-03-06 2015-09-22 Asm America, Inc. Doping with ALD technology
US7087997B2 (en) * 2001-03-12 2006-08-08 International Business Machines Corporation Copper to aluminum interlayer interconnect using stud and via liner
FI109770B (fi) * 2001-03-16 2002-10-15 Asm Microchemistry Oy Menetelmä metallinitridiohutkalvojen valmistamiseksi
US7183649B1 (en) * 2001-04-17 2007-02-27 Genus, Inc. Methods and procedures for engineering of composite conductive films by atomic layer deposition
US6596643B2 (en) 2001-05-07 2003-07-22 Applied Materials, Inc. CVD TiSiN barrier for copper integration
US6688584B2 (en) * 2001-05-16 2004-02-10 Micron Technology, Inc. Compound structure for reduced contact resistance
US6528884B1 (en) * 2001-06-01 2003-03-04 Advanced Micro Devices, Inc. Conformal atomic liner layer in an integrated circuit interconnect
KR100418581B1 (ko) * 2001-06-12 2004-02-11 주식회사 하이닉스반도체 메모리 소자의 제조방법
KR100519376B1 (ko) * 2001-06-12 2005-10-07 주식회사 하이닉스반도체 반도체 소자의 확산 방지막 형성 방법
US6686278B2 (en) * 2001-06-19 2004-02-03 United Microelectronics Corp. Method for forming a plug metal layer
US6849545B2 (en) * 2001-06-20 2005-02-01 Applied Materials, Inc. System and method to form a composite film stack utilizing sequential deposition techniques
US20070009658A1 (en) * 2001-07-13 2007-01-11 Yoo Jong H Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD process
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
WO2003029515A2 (en) 2001-07-16 2003-04-10 Applied Materials, Inc. Formation of composite tungsten films
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US20080268635A1 (en) * 2001-07-25 2008-10-30 Sang-Ho Yu Process for forming cobalt and cobalt silicide materials in copper contact applications
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
JP2005504885A (ja) 2001-07-25 2005-02-17 アプライド　マテリアルズ　インコーポレイテッド 新規なスパッタ堆積方法を使用したバリア形成
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
WO2003019651A2 (en) * 2001-08-24 2003-03-06 Mcnc Research & Development Institute Through-via vertical interconnects, through-via heat sinks and associated fabrication methods
KR100427030B1 (ko) * 2001-08-27 2004-04-14 주식회사 하이닉스반도체 다성분계 박막의 형성 방법 및 그를 이용한 커패시터의제조 방법
JP4178776B2 (ja) * 2001-09-03 2008-11-12 東京エレクトロン株式会社 成膜方法
US6718126B2 (en) 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
AU2002341677A1 (en) * 2001-09-18 2003-04-01 Applied Materials, Inc. Integrated equipment set for forming an interconnect on a substrate
US20030059538A1 (en) * 2001-09-26 2003-03-27 Applied Materials, Inc. Integration of barrier layer and seed layer
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
TW589684B (en) * 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
WO2003044242A2 (en) * 2001-11-16 2003-05-30 Applied Materials, Inc. Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors
KR100422597B1 (ko) * 2001-11-27 2004-03-16 주식회사 하이닉스반도체 다마신 공정에 의해 형성된 캐패시터와 금속배선을 가지는반도체소자
KR20030043380A (ko) * 2001-11-28 2003-06-02 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
US20030220708A1 (en) * 2001-11-28 2003-11-27 Applied Materials, Inc. Integrated equipment set for forming shallow trench isolation regions
US6773507B2 (en) 2001-12-06 2004-08-10 Applied Materials, Inc. Apparatus and method for fast-cycle atomic layer deposition
US7081271B2 (en) * 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6933586B2 (en) * 2001-12-13 2005-08-23 International Business Machines Corporation Porous low-k dielectric interconnects with improved adhesion produced by partial burnout of surface porogens
US6939801B2 (en) * 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
US6809026B2 (en) 2001-12-21 2004-10-26 Applied Materials, Inc. Selective deposition of a barrier layer on a metal film
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US6693356B2 (en) * 2002-03-27 2004-02-17 Texas Instruments Incorporated Copper transition layer for improving copper interconnection reliability
AU2003228402A1 (en) 2002-03-28 2003-10-13 President And Fellows Of Harvard College Vapor deposition of silicon dioxide nanolaminates
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
TWI300971B (en) * 2002-04-12 2008-09-11 Hitachi Ltd Semiconductor device
US6932871B2 (en) * 2002-04-16 2005-08-23 Applied Materials, Inc. Multi-station deposition apparatus and method
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US6620724B1 (en) * 2002-05-09 2003-09-16 Infineon Technologies Ag Low resistivity deep trench fill for DRAM and EDRAM applications
US6831003B1 (en) 2002-05-31 2004-12-14 Advanced Micro Devices, Inc. Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration
US7041335B2 (en) 2002-06-04 2006-05-09 Applied Materials, Inc. Titanium tantalum nitride silicide layer
US20040009665A1 (en) * 2002-06-04 2004-01-15 Applied Materials, Inc. Deposition of copper films
US20040007325A1 (en) * 2002-06-11 2004-01-15 Applied Materials, Inc. Integrated equipment set for forming a low K dielectric interconnect on a substrate
US6838125B2 (en) 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US20040009336A1 (en) * 2002-07-11 2004-01-15 Applied Materials, Inc. Titanium silicon nitride (TISIN) barrier layer for copper diffusion
WO2004008513A1 (ja) * 2002-07-15 2004-01-22 Hitachi Kokusai Electric Inc. 半導体装置の製造方法及び基板処理装置
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7066194B2 (en) 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
US6772072B2 (en) 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US6915592B2 (en) 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
DE10234735A1 (de) 2002-07-30 2004-02-12 Infineon Technologies Ag Verfahren zum vertikalen Strukturieren von Substraten in der Halbleiterprozesstechnik mittels inkonformer Abscheidung
GB0218417D0 (en) * 2002-08-08 2002-09-18 Seagate Technology Llc Combined atomic layer deposition and damascene processing for definition of narrow trenches
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US20040036129A1 (en) * 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US6967154B2 (en) 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US7153754B2 (en) * 2002-08-29 2006-12-26 Micron Technology, Inc. Methods for forming porous insulators from “void” creating materials and structures and semiconductor devices including same
JP2004103971A (ja) * 2002-09-12 2004-04-02 Hitachi High-Technologies Corp ダマシン処理方法、ダマシン処理装置および、ダマシン構造
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US6660630B1 (en) * 2002-10-10 2003-12-09 Taiwan Semiconductor Manufacturing Co. Ltd. Method for forming a tapered dual damascene via portion with improved performance
US6905737B2 (en) 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US7135408B2 (en) * 2002-10-30 2006-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Metal barrier integrity via use of a novel two step PVD-ALD deposition procedure
US6869876B2 (en) 2002-11-05 2005-03-22 Air Products And Chemicals, Inc. Process for atomic layer deposition of metal films
JP3668222B2 (ja) 2002-11-07 2005-07-06 株式会社東芝 半導体装置の製造方法
JP2006507670A (ja) * 2002-11-08 2006-03-02 エピオン コーポレーション 集積回路相互接続構造のｇｃｉｂ処理
EP1420080A3 (en) 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
KR100466332B1 (ko) * 2002-12-14 2005-01-14 동부전자 주식회사 반도체 소자의 제조 방법
US7033929B1 (en) * 2002-12-23 2006-04-25 Lsi Logic Corporation Dual damascene interconnect structure with improved electro migration lifetimes
KR100477816B1 (ko) * 2002-12-30 2005-03-22 주식회사 하이닉스반도체 반도체 소자의 티타늄 실리사이드 콘택 형성 방법
WO2004064147A2 (en) 2003-01-07 2004-07-29 Applied Materials, Inc. Integration of ald/cvd barriers with porous low k materials
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US20040130027A1 (en) * 2003-01-07 2004-07-08 International Business Machines Corporation Improved formation of porous interconnection layers
US6753248B1 (en) 2003-01-27 2004-06-22 Applied Materials, Inc. Post metal barrier/adhesion film
US20040175926A1 (en) * 2003-03-07 2004-09-09 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having a barrier-lined opening
US7179396B2 (en) * 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7186656B2 (en) * 2004-05-21 2007-03-06 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
JP2004311545A (ja) * 2003-04-03 2004-11-04 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び高融点金属膜の堆積装置
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7311946B2 (en) * 2003-05-02 2007-12-25 Air Products And Chemicals, Inc. Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes
KR100511914B1 (ko) * 2003-05-09 2005-09-02 주식회사 하이닉스반도체 피이사이클 시브이디법을 이용한 반도체소자의 제조방법
WO2004105123A1 (ja) * 2003-05-21 2004-12-02 Fujitsu Limited 半導体装置
JP4403824B2 (ja) * 2003-05-26 2010-01-27 東京エレクトロン株式会社 シリコン窒化膜の成膜方法
WO2004107434A1 (ja) * 2003-05-29 2004-12-09 Nec Corporation 配線構造およびその製造方法
KR100724181B1 (ko) * 2003-06-16 2007-05-31 동경 엘렉트론 주식회사 성막 방법, 반도체 장치의 제조 방법, 반도체 장치 및 성막장치
CN100405549C (zh) * 2003-06-16 2008-07-23 东京毅力科创株式会社 成膜方法、半导体装置的制造方法、半导体装置和成膜装置
US6930060B2 (en) * 2003-06-18 2005-08-16 International Business Machines Corporation Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric
WO2004113585A2 (en) 2003-06-18 2004-12-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US6905958B2 (en) * 2003-07-25 2005-06-14 Intel Corporation Protecting metal conductors with sacrificial organic monolayers
WO2005017963A2 (en) * 2003-08-04 2005-02-24 Asm America, Inc. Surface preparation prior to deposition on germanium
US7052990B2 (en) * 2003-09-03 2006-05-30 Infineon Technologies Ag Sealed pores in low-k material damascene conductive structures
US7235482B2 (en) * 2003-09-08 2007-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
US20050056219A1 (en) * 2003-09-16 2005-03-17 Tokyo Electron Limited Formation of a metal-containing film by sequential gas exposure in a batch type processing system
US20050062164A1 (en) * 2003-09-23 2005-03-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for improving time dependent dielectric breakdown lifetimes
US20050067103A1 (en) 2003-09-26 2005-03-31 Applied Materials, Inc. Interferometer endpoint monitoring device
US7352053B2 (en) * 2003-10-29 2008-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Insulating layer having decreased dielectric constant and increased hardness
US7635348B2 (en) * 2003-11-04 2009-12-22 Meridian Medical Technologies, Inc. Container for medicament automatic injector and automatic injector adapted therefor
US7018917B2 (en) * 2003-11-20 2006-03-28 Asm International N.V. Multilayer metallization
US7157373B2 (en) * 2003-12-11 2007-01-02 Infineon Technologies Ag Sidewall sealing of porous dielectric materials
US7081407B2 (en) * 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
US6849541B1 (en) * 2003-12-19 2005-02-01 United Microelectronics Corp. Method of fabricating a dual damascene copper wire
GB0330010D0 (en) * 2003-12-24 2004-01-28 Cavendish Kinetics Ltd Method for containing a device and a corresponding device
JP2005191290A (ja) * 2003-12-25 2005-07-14 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法
EP1553625B1 (en) * 2004-01-12 2014-05-07 Infineon Technologies AG Method for fabrication of a contact structure
JP4695842B2 (ja) * 2004-01-26 2011-06-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7906393B2 (en) * 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US7405143B2 (en) * 2004-03-25 2008-07-29 Asm International N.V. Method for fabricating a seed layer
US20050219913A1 (en) * 2004-04-06 2005-10-06 O2Ic, Inc. Non-volatile memory array
US7259090B2 (en) * 2004-04-28 2007-08-21 Taiwan Semiconductor Manufacturing Co., Ltd. Copper damascene integration scheme for improved barrier layers
KR100578221B1 (ko) * 2004-05-06 2006-05-12 주식회사 하이닉스반도체 확산방지막을 구비하는 반도체소자의 제조 방법
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US20060153995A1 (en) * 2004-05-21 2006-07-13 Applied Materials, Inc. Method for fabricating a dielectric stack
US20060062917A1 (en) * 2004-05-21 2006-03-23 Shankar Muthukrishnan Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane
US20060019033A1 (en) * 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
US20050266173A1 (en) * 2004-05-26 2005-12-01 Tokyo Electron Limited Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
US7015150B2 (en) * 2004-05-26 2006-03-21 International Business Machines Corporation Exposed pore sealing post patterning
US7211507B2 (en) * 2004-06-02 2007-05-01 International Business Machines Corporation PE-ALD of TaN diffusion barrier region on low-k materials
US20050287826A1 (en) * 2004-06-29 2005-12-29 Abell Thomas J Method of sealing low-k dielectrics and devices made thereby
US20060019493A1 (en) * 2004-07-15 2006-01-26 Li Wei M Methods of metallization for microelectronic devices utilizing metal oxide
US7241686B2 (en) 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
US20060024954A1 (en) * 2004-08-02 2006-02-02 Zhen-Cheng Wu Copper damascene barrier and capping layer
US7396769B2 (en) * 2004-08-02 2008-07-08 Lam Research Corporation Method for stripping photoresist from etched wafer
US7205244B2 (en) * 2004-09-21 2007-04-17 Molecular Imprints Patterning substrates employing multi-film layers defining etch-differential interfaces
US7547504B2 (en) * 2004-09-21 2009-06-16 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
US7323387B2 (en) * 2004-11-12 2008-01-29 Seagate Technology Llc Method to make nano structure below 25 nanometer with high uniformity on large scale
US7678682B2 (en) * 2004-11-12 2010-03-16 Axcelis Technologies, Inc. Ultraviolet assisted pore sealing of porous low k dielectric films
US7429402B2 (en) 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
KR100613390B1 (ko) * 2004-12-16 2006-08-17 동부일렉트로닉스 주식회사 금속 배선된 반도체 소자 및 반도체 소자 금속 배선 형성방법
JP2006190884A (ja) * 2005-01-07 2006-07-20 Toshiba Corp 半導体装置及び半導体装置の製造方法
US7816236B2 (en) * 2005-02-04 2010-10-19 Asm America Inc. Selective deposition of silicon-containing films
US7498242B2 (en) * 2005-02-22 2009-03-03 Asm America, Inc. Plasma pre-treating surfaces for atomic layer deposition
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US7608549B2 (en) * 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
US7335588B2 (en) * 2005-04-15 2008-02-26 International Business Machines Corporation Interconnect structure and method of fabrication of same
US20060240660A1 (en) * 2005-04-20 2006-10-26 Jin-Sheng Yang Semiconductor stucture and method of manufacturing the same
EP1790758A1 (en) * 2005-11-25 2007-05-30 Interuniversitair Microelektronica Centrum ( Imec) Atomic layer deposition (ald) method for producing a high quality layer
US7256131B2 (en) * 2005-07-19 2007-08-14 Molecular Imprints, Inc. Method of controlling the critical dimension of structures formed on a substrate
US7473637B2 (en) 2005-07-20 2009-01-06 Micron Technology, Inc. ALD formed titanium nitride films
US7651942B2 (en) * 2005-08-15 2010-01-26 Infineon Technologies Ag Metal interconnect structure and method
US7427570B2 (en) * 2005-09-01 2008-09-23 Micron Technology, Inc. Porous organosilicate layers, and vapor deposition systems and methods for preparing same
US7394154B2 (en) * 2005-09-13 2008-07-01 International Business Machines Corporation Embedded barrier for dielectric encapsulation
CN101263591A (zh) * 2005-09-15 2008-09-10 Nxp股份有限公司 半导体器件结构以及制造具有此结构的半导体器件的方法
US20070065578A1 (en) * 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
US7785658B2 (en) * 2005-10-07 2010-08-31 Asm Japan K.K. Method for forming metal wiring structure
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US20070099422A1 (en) * 2005-10-28 2007-05-03 Kapila Wijekoon Process for electroless copper deposition
US7850779B2 (en) * 2005-11-04 2010-12-14 Applied Materisals, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
JP4975414B2 (ja) * 2005-11-16 2012-07-11 エーエスエム インターナショナル エヌ．ヴェー． Ｃｖｄ又はａｌｄによる膜の堆積のための方法
US20070117102A1 (en) * 2005-11-22 2007-05-24 Buzby Philip R Nucleotide analogs
US7658802B2 (en) * 2005-11-22 2010-02-09 Applied Materials, Inc. Apparatus and a method for cleaning a dielectric film
JP2009521801A (ja) * 2005-12-22 2009-06-04 エーエスエム アメリカ インコーポレイテッド ドープされた半導体物質のエピタキシャル堆積
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US7524755B2 (en) * 2006-02-22 2009-04-28 Chartered Semiconductor Manufacturing, Ltd. Entire encapsulation of Cu interconnects using self-aligned CuSiN film
US20070205507A1 (en) * 2006-03-01 2007-09-06 Hui-Lin Chang Carbon and nitrogen based cap materials for metal hard mask scheme
US20070252299A1 (en) * 2006-04-27 2007-11-01 Applied Materials, Inc. Synchronization of precursor pulsing and wafer rotation
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
EP2047502A4 (en) * 2006-06-30 2009-12-30 Applied Materials Inc NANOCRYSTAL FORMATION
KR100705936B1 (ko) * 2006-06-30 2007-04-13 주식회사 하이닉스반도체 반도체 소자의 비트라인 형성방법
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
EP2074660A1 (en) * 2006-09-04 2009-07-01 Nxp B.V. Control of carbon nanostructure growth in an interconnect structure
KR101427142B1 (ko) * 2006-10-05 2014-08-07 에이에스엠 아메리카, 인코포레이티드 금속 규산염 막의 원자층 증착
US7521379B2 (en) 2006-10-09 2009-04-21 Applied Materials, Inc. Deposition and densification process for titanium nitride barrier layers
JP5204964B2 (ja) * 2006-10-17 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9087877B2 (en) * 2006-10-24 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Low-k interconnect structures with reduced RC delay
US8268409B2 (en) * 2006-10-25 2012-09-18 Asm America, Inc. Plasma-enhanced deposition of metal carbide films
US8158526B2 (en) 2006-10-30 2012-04-17 Applied Materials, Inc. Endpoint detection for photomask etching
US7775508B2 (en) 2006-10-31 2010-08-17 Applied Materials, Inc. Ampoule for liquid draw and vapor draw with a continuous level sensor
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
KR100806128B1 (ko) * 2006-12-11 2008-02-22 삼성전자주식회사 반도체 소자의 배선 구조물 및 이의 형성방법
US20080206987A1 (en) * 2007-01-29 2008-08-28 Gelatos Avgerinos V Process for tungsten nitride deposition by a temperature controlled lid assembly
US7713874B2 (en) * 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
US7939932B2 (en) * 2007-06-20 2011-05-10 Analog Devices, Inc. Packaged chip devices with atomic layer deposition protective films
US8017182B2 (en) * 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
US7638170B2 (en) 2007-06-21 2009-12-29 Asm International N.V. Low resistivity metal carbonitride thin film deposition by atomic layer deposition
US20080318420A1 (en) * 2007-06-22 2008-12-25 Wong Denny K Two step chemical mechanical polish
KR20090000324A (ko) * 2007-06-28 2009-01-07 주식회사 하이닉스반도체 반도체 소자의 콘택 플러그 형성 방법
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US7585762B2 (en) 2007-09-25 2009-09-08 Applied Materials, Inc. Vapor deposition processes for tantalum carbide nitride materials
US7678298B2 (en) 2007-09-25 2010-03-16 Applied Materials, Inc. Tantalum carbide nitride materials by vapor deposition processes
US7824743B2 (en) 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
KR101544198B1 (ko) 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 루테늄 막 형성 방법
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7655564B2 (en) 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
US7727882B1 (en) * 2007-12-17 2010-06-01 Novellus Systems, Inc. Compositionally graded titanium nitride film for diffusion barrier applications
US7655543B2 (en) * 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US7799674B2 (en) 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US7767572B2 (en) * 2008-02-21 2010-08-03 Applied Materials, Inc. Methods of forming a barrier layer in an interconnect structure
US7618893B2 (en) * 2008-03-04 2009-11-17 Applied Materials, Inc. Methods of forming a layer for barrier applications in an interconnect structure
US7951414B2 (en) * 2008-03-20 2011-05-31 Micron Technology, Inc. Methods of forming electrically conductive structures
US7816278B2 (en) * 2008-03-28 2010-10-19 Tokyo Electron Limited In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
KR101540077B1 (ko) 2008-04-16 2015-07-28 에이에스엠 아메리카, 인코포레이티드 알루미늄 탄화수소 화합물들을 이용한 금속 카바이드 막들의 원자층 증착법
US7666474B2 (en) 2008-05-07 2010-02-23 Asm America, Inc. Plasma-enhanced pulsed deposition of metal carbide films
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
US8146896B2 (en) 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US20100151676A1 (en) * 2008-12-16 2010-06-17 Applied Materials, Inc. Densification process for titanium nitride layer for submicron applications
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
JP5774822B2 (ja) * 2009-05-25 2015-09-09 株式会社日立国際電気 半導体デバイスの製造方法及び基板処理装置
FI20095630A0 (fi) * 2009-06-05 2009-06-05 Beneq Oy Suojapinnoitus, menetelmä alustan suojaamiseksi ja menetelmän käyttö
US8329569B2 (en) 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
EP2580371A2 (en) 2010-06-08 2013-04-17 President and Fellows of Harvard College Low-temperature synthesis of silica
KR20150048901A (ko) 2010-06-25 2015-05-07 캐논 아네르바 가부시키가이샤 스퍼터링 장치, 박막증착 방법 및 컨트롤 디바이스
US8633109B2 (en) * 2010-08-04 2014-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. Soft error rate (SER) reduction in advanced silicon processes
US8945305B2 (en) 2010-08-31 2015-02-03 Micron Technology, Inc. Methods of selectively forming a material using parylene coating
US20120083134A1 (en) * 2010-09-30 2012-04-05 Hui-Jung Wu Method of mitigating substrate damage during deposition processes
US8778204B2 (en) 2010-10-29 2014-07-15 Applied Materials, Inc. Methods for reducing photoresist interference when monitoring a target layer in a plasma process
CN103189964A (zh) 2010-11-04 2013-07-03 诺发系统公司 钽的离子诱导原子层沉积
US9711403B2 (en) * 2011-01-17 2017-07-18 Xintec Inc. Method for forming chip package
KR101333914B1 (ko) * 2011-02-22 2013-11-27 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 진보된 실리콘 프로세스로 감소된 소프트 에러 레이트（ｓｅｒ）를 갖는 반도체 디바이스를 제조하는 방법 및 그러한 반도체 디바이스
KR101956347B1 (ko) 2011-03-04 2019-03-08 어플라이드 머티어리얼스, 인코포레이티드 콘택 세정을 위한 방법들
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US8912096B2 (en) 2011-04-28 2014-12-16 Applied Materials, Inc. Methods for precleaning a substrate prior to metal silicide fabrication process
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US9218961B2 (en) 2011-09-19 2015-12-22 Applied Materials, Inc. Methods of forming a metal containing layer on a substrate with high uniformity and good profile control
US8961804B2 (en) 2011-10-25 2015-02-24 Applied Materials, Inc. Etch rate detection for photomask etching
US8808559B2 (en) 2011-11-22 2014-08-19 Applied Materials, Inc. Etch rate detection for reflective multi-material layers etching
US8927423B2 (en) 2011-12-16 2015-01-06 Applied Materials, Inc. Methods for annealing a contact metal layer to form a metal silicidation layer
US8900469B2 (en) 2011-12-19 2014-12-02 Applied Materials, Inc. Etch rate detection for anti-reflective coating layer and absorber layer etching
US8586479B2 (en) 2012-01-23 2013-11-19 Applied Materials, Inc. Methods for forming a contact metal layer in semiconductor devices
PL2628822T3 (pl) 2012-02-15 2016-04-29 Picosun Oy Elementy łożysk i łożyska izolowane elektrycznie
EP2628817B1 (en) 2012-02-15 2016-11-02 IHI Hauzer Techno Coating B.V. A coated article of martensitic steel and a method of forming a coated article of steel
US9330939B2 (en) 2012-03-28 2016-05-03 Applied Materials, Inc. Method of enabling seamless cobalt gap-fill
KR101381646B1 (ko) * 2012-04-30 2014-04-14 한국에너지기술연구원 동시기화법을 이용한 코어-쉘 구조의 금속-탄소 복합체의 제조방법 및 이에 의해 제조된 코어-쉘 구조의 금속-탄소 복합체
KR101341550B1 (ko) * 2012-06-20 2013-12-13 한국에너지기술연구원 동시기화법을 이용하는 연료전지용 전극 촉매의 제조방법, 이에 의해 제조된 촉매를 포함하는 연료전지용 전극의 제조방법 및 이를 포함하는 연료전지
US9805939B2 (en) 2012-10-12 2017-10-31 Applied Materials, Inc. Dual endpoint detection for advanced phase shift and binary photomasks
US9064850B2 (en) 2012-11-15 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. Through-substrate via formation with improved topography control
US8778574B2 (en) 2012-11-30 2014-07-15 Applied Materials, Inc. Method for etching EUV material layers utilized to form a photomask
US9412602B2 (en) 2013-03-13 2016-08-09 Asm Ip Holding B.V. Deposition of smooth metal nitride films
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US8962473B2 (en) 2013-03-15 2015-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming hybrid diffusion barrier layer and semiconductor device thereof
US9543163B2 (en) 2013-08-20 2017-01-10 Applied Materials, Inc. Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process
KR102263554B1 (ko) 2013-09-27 2021-06-09 어플라이드 머티어리얼스, 인코포레이티드 심리스 코발트 갭-충전을 가능하게 하는 방법
US9012278B2 (en) 2013-10-03 2015-04-21 Asm Ip Holding B.V. Method of making a wire-based semiconductor device
US9385086B2 (en) * 2013-12-10 2016-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Bi-layer hard mask for robust metallization profile
US9502365B2 (en) * 2013-12-31 2016-11-22 Texas Instruments Incorporated Opening in a multilayer polymeric dielectric layer without delamination
US9435031B2 (en) * 2014-01-07 2016-09-06 International Business Machines Corporation Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films
US9508561B2 (en) 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications
US10643925B2 (en) 2014-04-17 2020-05-05 Asm Ip Holding B.V. Fluorine-containing conductive films
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9528185B2 (en) 2014-08-22 2016-12-27 Applied Materials, Inc. Plasma uniformity control by arrays of unit cell plasmas
US9978607B2 (en) * 2014-09-05 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Through via structure and method
KR102216575B1 (ko) 2014-10-23 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 티타늄 알루미늄 및 탄탈륨 알루미늄 박막들
US9793108B2 (en) * 2015-06-25 2017-10-17 Applied Material, Inc. Interconnect integration for sidewall pore seal and via cleanliness
TWI723024B (zh) 2015-06-26 2021-04-01 美商應用材料股份有限公司 用於改良的氣體分配的遞迴注入設備
WO2017037927A1 (ja) * 2015-09-03 2017-03-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および記録媒体
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
US10546730B2 (en) * 2016-05-16 2020-01-28 Varian Semiconductor Equipment Associates, Inc Filling a cavity in a substrate using sputtering and deposition
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
KR102624631B1 (ko) * 2016-12-02 2024-01-12 삼성전자주식회사 반도체 장치
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10563304B2 (en) 2017-04-07 2020-02-18 Applied Materials, Inc. Methods and apparatus for dynamically treating atomic layer deposition films in physical vapor deposition chambers
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
US10504901B2 (en) 2017-04-26 2019-12-10 Asm Ip Holding B.V. Substrate processing method and device manufactured using the same
CN114875388A (zh) 2017-05-05 2022-08-09 Asm Ip 控股有限公司 用于受控形成含氧薄膜的等离子体增强沉积方法
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10392697B2 (en) * 2017-06-30 2019-08-27 Uchicago Argonne, Llc Composite matrix using a hybrid deposition technique
US20190017165A1 (en) * 2017-07-13 2019-01-17 Applied Materials, Inc. Methods And Apparatus For Depositing Tungsten Nucleation Layers
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
KR102405723B1 (ko) 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
CN111357090B (zh) 2017-11-11 2024-01-05 微材料有限责任公司 用于高压处理腔室的气体输送系统
WO2019099255A2 (en) 2017-11-17 2019-05-23 Applied Materials, Inc. Condenser system for high pressure processing system
TWI761636B (zh) 2017-12-04 2022-04-21 荷蘭商Ａｓｍ Ｉｐ控股公司 電漿增強型原子層沉積製程及沉積碳氧化矽薄膜的方法
WO2019173006A1 (en) 2018-03-09 2019-09-12 Applied Materials, Inc. High pressure annealing process for metal containing materials
KR102492302B1 (ko) * 2018-03-20 2023-01-27 삼성전자주식회사 반도체 소자 및 그 제조 방법
US11227829B2 (en) 2018-03-29 2022-01-18 Intel Corporation Device terminal interconnect structures
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
DE102018131694B4 (de) 2018-09-28 2025-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum bilden einer integrierten schaltungsstruktur
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US12359315B2 (en) 2019-02-14 2025-07-15 Asm Ip Holding B.V. Deposition of oxides and nitrides
US11532558B2 (en) 2019-09-27 2022-12-20 Intel Corporation Metallization barrier structures for bonded integrated circuit interfaces
US11361992B2 (en) * 2019-10-08 2022-06-14 Eugenus, Inc. Conformal titanium nitride-based thin films and methods of forming same
US12431388B2 (en) 2019-10-08 2025-09-30 Eugenus, Inc. Conformal titanium silicon nitride-based thin films and methods of forming same
US12444648B2 (en) 2019-10-08 2025-10-14 Eugenus, Inc. Conformal titanium silicon nitride-based thin films and methods of forming same
KR20220097444A (ko) * 2019-11-06 2022-07-07 가부시키가이샤 크리에이티브 코팅즈 성막 방법 및 성막 장치
US12341005B2 (en) 2020-01-17 2025-06-24 Asm Ip Holding B.V. Formation of SiCN thin films
US12142479B2 (en) 2020-01-17 2024-11-12 Asm Ip Holding B.V. Formation of SiOCN thin films
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
US11239156B2 (en) 2020-03-19 2022-02-01 Intel Corporation Planar slab vias for integrated circuit interconnects
CN113497186A (zh) * 2020-04-01 2021-10-12 联华电子股份有限公司 并联的电容结构及其制作方法
TW202200828A (zh) 2020-06-24 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 含鉬薄膜的氣相沉積
US12112973B2 (en) * 2020-10-23 2024-10-08 Changxin Memory Technologies, Inc. Semiconductor structure and method for manufacturing the same
US20220139772A1 (en) * 2020-11-02 2022-05-05 Intel Corporation Interconnect structures with area selective adhesion or barrier materials for low resistance vias in integrated circuits
US11444024B2 (en) 2020-11-02 2022-09-13 Intel Corporation Subtractively patterned interconnect structures for integrated circuits
KR102366555B1 (ko) 2021-01-05 2022-02-23 주식회사 이지티엠 핵성장 지연을 이용한 영역 선택적 박막 형성 방법
JP7647185B2 (ja) 2021-03-09 2025-03-18 東京エレクトロン株式会社 タングステン膜を成膜する方法、及びシステム
US20230317514A1 (en) * 2022-03-30 2023-10-05 Nanya Technology Corporation Semiconductor device with composite barrier structure and method for fabricating the same
US20230402313A1 (en) * 2022-06-10 2023-12-14 Nanya Technology Corporation Method of fabricating void-free conductive feature of semiconductor device

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
FI57975C (fi) 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
US5769950A (en) 1985-07-23 1998-06-23 Canon Kabushiki Kaisha Device for forming deposited film
US4761269A (en) 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4747367A (en) 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
US5071670A (en) 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
US5306666A (en) 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
FI100409B (fi) 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI97731C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
JPH08213343A (ja) * 1995-01-31 1996-08-20 Sony Corp 半導体装置およびその製造方法
JPH0922896A (ja) 1995-07-07 1997-01-21 Toshiba Corp 金属膜の選択的形成方法
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US6156651A (en) * 1996-12-13 2000-12-05 Texas Instruments Incorporated Metallization method for porous dielectrics
KR100236069B1 (ko) * 1996-12-26 1999-12-15 김영환 캐패시터 및 그 제조방법
US5879459A (en) 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US6351039B1 (en) 1997-05-28 2002-02-26 Texas Instruments Incorporated Integrated circuit dielectric and method
US5904565A (en) 1997-07-17 1999-05-18 Sharp Microelectronics Technology, Inc. Low resistance contact between integrated circuit metal levels and method for same
JP4097747B2 (ja) * 1997-08-07 2008-06-11 株式会社アルバック バリア膜形成方法
US6197683B1 (en) * 1997-09-29 2001-03-06 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same
TW439151B (en) 1997-12-31 2001-06-07 Samsung Electronics Co Ltd Method for forming conductive layer using atomic layer deposition process
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
KR100275738B1 (ko) * 1998-08-07 2000-12-15 윤종용 원자층 증착법을 이용한 박막 제조방법
US6291876B1 (en) * 1998-08-20 2001-09-18 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with composite atomic barrier film and process for making same
US6077775A (en) 1998-08-20 2000-06-20 The United States Of America As Represented By The Secretary Of The Navy Process for making a semiconductor device with barrier film formation using a metal halide and products thereof
US6144050A (en) 1998-08-20 2000-11-07 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with strontium barrier film and process for making same
KR100287180B1 (ko) * 1998-09-17 2001-04-16 윤종용 계면 조절층을 이용하여 금속 배선층을 형성하는 반도체 소자의 제조 방법
KR100327328B1 (ko) 1998-10-13 2002-05-09 윤종용 부분적으로다른두께를갖는커패시터의유전막형성방버뵤
JP2000150647A (ja) * 1998-11-11 2000-05-30 Sony Corp 配線構造およびその製造方法
US6391785B1 (en) * 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US20010051420A1 (en) * 2000-01-19 2001-12-13 Besser Paul R. Dielectric formation to seal porosity of low dielectic constant (low k) materials after etch
KR100363088B1 (ko) * 2000-04-20 2002-12-02 삼성전자 주식회사 원자층 증착방법을 이용한 장벽 금속막의 제조방법
US6444495B1 (en) 2001-01-11 2002-09-03 Honeywell International, Inc. Dielectric films for narrow gap-fill applications

Also Published As

Publication number Publication date
US20030134508A1 (en) 2003-07-17
US6686271B2 (en) 2004-02-03
US20030054631A1 (en) 2003-03-20
US6699783B2 (en) 2004-03-02
JP2002009078A (ja) 2002-01-11
JP2012231155A (ja) 2012-11-22
US6482733B2 (en) 2002-11-19
US20010054769A1 (en) 2001-12-27
JP5554806B2 (ja) 2014-07-23

Similar Documents

Publication Publication Date Title
JP5102416B2 (ja) 集積回路中の多孔質絶縁層上に薄膜を形成するための方法、及び集積回路中の多孔質絶縁層上の金属窒化物バリア層の形成方法
JP4825422B2 (ja) 絶縁層の上部表面から延びる複数のトレンチを有する多孔質絶縁層を含む集積回路を製造する方法
EP1221177B1 (en) Conformal lining layers for damascene metallization
US7670944B2 (en) Conformal lining layers for damascene metallization
US7498242B2 (en) Plasma pre-treating surfaces for atomic layer deposition
KR100737305B1 (ko) 집적회로 금속화 구성에서 바닥에 장벽층을 증착하지 않는 증착 방법
JP5016767B2 (ja) 傾斜薄膜の形成方法
US7981791B2 (en) Thin films
US20110306203A1 (en) Interconnect structure and method of manufacturing a damascene structure
TWI694501B (zh) 防止銅擴散的介電/金屬阻障集成
US20080251921A1 (en) Structure for a Semiconductor Device and a Method of Manufacturing the Same
US8349726B2 (en) Method for fabricating a structure for a semiconductor device using a halogen based precursor
CN100481383C (zh) 用于制造半导体器件的方法和半导体器件

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20040701

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20040701

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080512

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081031

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20090807

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090807

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20091211

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20091211

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111006

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111220

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120319

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120323

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120420

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120425

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120521

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120524

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120620

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20120622

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120911

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120928

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151005

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5102416

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term