CN114651087A - 成膜方法及成膜装置 - Google Patents

成膜方法及成膜装置 Download PDF

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CN114651087A
CN114651087A CN202080076110.XA CN202080076110A CN114651087A CN 114651087 A CN114651087 A CN 114651087A CN 202080076110 A CN202080076110 A CN 202080076110A CN 114651087 A CN114651087 A CN 114651087A
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gas
reaction
film
ald
reaction vessel
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佐藤英儿
坂本仁志
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Xinene Technology Co ltd
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Abstract

一种成膜方法，其是在成膜对象(1)上进行CVD膜(4)和ALD膜(5)的成膜的成膜方法。在进行ALD膜的成膜的ALD处理中，重复实施2次以上ALD循环，所述ALD循环包括：第一工序，其使配置有成膜对象的反应容器(20)充满经由第一供给管(100)导入的原料气体；第二工序，其在第一工序后将原料气体从反应容器排出；第三工序，其在第二工序后，使反应容器充满在第二供给管(200)内被电感耦合等离子体活化并经由第二供给管(200)导入的反应气体；和第四工序，其在第三工序后将反应气体从反应容器排出。在进行CVD膜的成膜的CVD处理中，至少实施1次ALD循环，且第二工序在使原料气体残留于反应容器的气相中的状态下结束。

Description

成膜方法及成膜装置
技术领域
本发明涉及能够在同一反应容器内连续地进行CVD(Chemical VaporDeposition：化学气相沉积)膜和ALD(Atomic Layer Deposition：原子层沉积)膜的成膜的成膜方法以及成膜装置。
背景技术
专利文献1中记载了在同一反应容器内形成CVD膜后形成ALD膜的方法。
现有技术文献
专利文献
专利文献1：日本特开2018-59173号公报
发明内容
发明所要解决的技术问题
在专利文献1中，CVD膜和ALD膜的形成中共用的原料气体和反应气体经由配置在反应容器的上游的喷头而被导入反应容器。配置于反应容器并载置成膜对象的载置台成为下部电极，包含喷头的容器的上部构造成为上部电极，在反应容器内生成等离子体。
在形成ALD膜的ALD处理中，为了分离吸附阶段和反应阶段，吸附阶段所需的原料气体和反应阶段所需的反应气体隔着排气(包括吹扫)交替地供给至反应容器。另一方面，在形成CVD膜的CVD处理中，原料气体和反应气体经由喷头同时供给，设定反应容器内为容易生成等离子体的例如几百Pa左右的压力。因此，在CVD处理中，在气相中发生反应，而且气体分压比较高，因此成为产生颗粒、副产物的原因。此外，在专利文献1中，是达350℃～550℃的高温处理。
本发明的目的在于，提供一种能够实现CVD处理与ALD处理的共通化而使两处理的控制简便，并且能够进行低温处理，能够抑制颗粒、副产物的产生的成膜方法以及成膜装置。
解决技术问题的手段
本发明的一个方式涉及一种成膜方法，其是在成膜对象上进行CVD膜和ALD膜的成膜的成膜方法，其中，在进行上述ALD膜的成膜的ALD处理中，重复实施2次以上ALD循环，上述ALD循环包括：第一工序，其使配置有成膜对象的反应容器充满经由第一供给管导入的原料气体；第二工序，其在上述第一工序后，对上述反应容器的气相中的上述原料气体进行排气；第三工序，其在上述第二工序后，使上述反应容器充满在第二供给管内被电感耦合等离子体活化并经由上述第二供给管导入的反应气体；和第四工序，其在上述第三工序后，将上述反应气体从上述反应容器排出；在将上述CVD膜进行成膜的CVD处理中，至少实施1次上述ALD循环，并且，上述第二工序的排气在使上述原料气体残留于上述反应容器的气相中的状态下结束。
根据本发明的一个方式，CVD处理中，ALD循环至少实施1次，在这点上，CVD处理和ALD处理是共通的。由此，能够简便地进行两种处理的控制。在CVD处理中，第二工序的排气在使上述原料气体残留于反应容器的气相中的状态下结束，至少在这一点上，与ALD处理不同。因此，两个处理间的差异除了ALD循环数之外，仅使第二工序的排气时间不同，就能够使两个处理的控制变得极其简便。如果在CVD处理中的第二工序的排气在使原料气体残留于反应容器的气相中的状态下结束，则在第三工序中导入的反应气体与气相中的原料气体反应，能够形成CVD膜。另外，与活化反应气体中含有的自由基相比，原料气体在室温水平下也能够饱和吸附于成膜对象，因此不需要在成膜中对成膜对象进行强制加热。此外，通过第二工序的排气，反应气体的压力也降低，因此与专利文献1那样的高压力下的反应不同，难以产生颗粒、副产物。
在本发明的一个方式中，也可以是，在上述ALD处理以及上述CVD处理中，上述第一工序的时间被设定为实质上相等，上述CVD处理中的上述第二工序的时间被设定为比上述ALD处理中的上述第二工序的时间短。通过将在ALD处理和CVD处理中导入原料气体的时间设定为相等而使CVD处理中的第二工序的排气时间比ALD处理短，CVD处理中的第二工序的排气能够在使原料气体残留于反应容器的气相中的状态下结束。
在本发明的一个方式中，可以设定上述原料气体为有机金属气体，上述反应气体为氧化气体。活化反应气体中含有的OH自由基使得能够进行低温处理。
在本发明的一个方式中，可以设定上述原料气体为有机金属气体，上述反应气体为氮化气体。活化反应气体中含有的NH自由基使得能够进行低温处理。
在本发明的一个方式中，上述成膜对象为多孔质体，可以在进行成膜的面上具有开口的孔。在该情况下，能够在通过CVD处理将孔堵塞之后，在CVD膜上形成致密的ALD膜。
本发明的另一方式涉及一种成膜装置，其具有：反应容器，其配置成膜对象；第一供给管，其将原料气体供给至上述反应容器；第二供给管，其与上述反应容器连接，供给反应气体；反应气体活化装置，其利用电感耦合等离子体使上述第二供给部管内的上述反应气体活化；排气部，其对上述反应容器内进行排气；和控制部，其对CVD处理和ALD处理进行控制，上述控制部使得：在上述ALD处理中重复实施2次以上ALD循环，该ALD循环包括：第一工序，其经由上述第一供给管向配置有上述成膜对象的上述反应容器导入上述原料气体；第二工序，其在上述第一工序后，利用上述排气部将上述原料气体从上述反应容器排出；第三工序，其在上述第二工序后，将在上述第二供给管内被上述反应气体活化装置活化后的上述反应气体经由上述第二供给管导入至上述反应容器；和第四工序，其在上述第三工序后，将上述反应气体从上述反应容器排出，在上述CVD处理中，至少实施1次上述ALD循环，且上述第二工序在使上述原料气体残留于上述反应容器的气相中的状态下结束。
根据本发明的另一方式，能够适当地实施作为本发明的一个方式的成膜方法。
附图说明
图1是本发明的一实施方式的成膜装置的概略说明图。
图2是表示图1所示的反应气体活化装置的一例的图。
图3是表示在作为成膜对象的多孔质体的表面形成的CVD膜以及ALD膜的图。
图4是CVD处理与ALD处理连续的成膜工序的时序图。
图5是表示CVD处理与ALD处理的关系的时序图。
具体实施方式
以下，对本实施方式进行说明。需要说明的是，以下说明的本实施方式并不对权利要求书的记载内容进行不当限定。另外，本实施方式中说明的构成并不一定全部是必要技术特征。
1.成膜装置
图1表示实施方式的成膜装置。在图1中，成膜装置10例如具有石英制的反应容器20。反应容器20具有原料气体导入口30、反应气体导入口40和排气口50。在反应容器20内设置有例如载置并支承成膜对象1的支承部60。
在原料气体导入口30连接有第一供给管100，在第一供给管100连接有原料气体容器110及流量控制器130。在设置于第一供给管100的第一阀120为打开状态时，由流量控制器130控制的流量的原料气体从原料气体容器110向原料气体导入口30供给。在反应气体导入口40连接有第二供给管200。在第二供给管200设置有反应气体活化装置210。反应气体容器220向反应气体活化装置210供给反应气体。由反应气体活化装置210活化后的反应气体经由第二阀230供给至反应气体导入口40。
在本实施方式中，原料气体例如为TDMAS(SiH[N(CH3)2]3)，活化后的反应气体为OH自由基(OH*)，在成膜对象1上进行氧化硅膜SiO2的成膜。作为原料气体使用的例如三甲基铝Al(CH3)3也可以与OH自由基(OH*)反应而形成氧化铝Al2O3，但不限于此。
图2(A)表示反应气体容器220及反应气体活化装置210的一例。在图2(A)中，反应气体例如为水蒸气H2O，使水蒸气活化而生成OH自由基(OH*)。因此，反应气体容器220包含储存有水2的加湿器240和非活性气体容器250。来自非活性气体容器250的非活性气体例如氩气Ar经由管260导入加湿器240。通过氩Ar进行了鼓泡的水2成为水蒸气气体，向第二供给管200供给。例如在石英制的第二供给管200的周围设置感应线圈270。在感应线圈270上连接有图1所示的高频电源212。例如，由感应线圈270施加的电磁能量为20W，频率为13.56MHz。通过感应线圈270在第二供给管200内生成反应气体的电感耦合等离子体3。通过将OH自由基(OH*)供给至反应容器20，如后所述，不对成膜对象1进行强制加热，能够在低温下例如在室温下进行成膜。
在反应容器20的排气口50连接有排气管300，在排气管300设置有排气泵310和排气阀320。通过排气泵310能够对反应容器20抽真空。由此，能够从反应容器20排出原料气体或反应气体。需要说明的是，虽然未图示，但在利用排气泵310进行排气的过程中，能够向反应容器20供给进行了流量控制的非活性气体作为吹扫气体。为了从反应容器20排出原料气体或反应气体，也可以通过导入吹扫气体而将反应容器20内置换为吹扫气体。此外，也可以使用非活性气体作为原料气体的载气。
控制部400负责CVD处理和ALD处理的控制。图3是表示利用由控制部400执行的成膜方法对作为成膜对象的多孔质体1的表面进行成膜的一例的示意图。图4是由控制部400执行的成膜方法的时序图，连续执行CVD处理和ALD处理。图5是表示由控制部400执行的CVD处理与ALD处理的关系的时序图。关于控制部400的控制内容，以本实施方式的成膜方法为例进行说明。
2.成膜方法
如图3所示，为了对多孔质体1进行成膜，首先形成CVD膜4，之后，在CVD膜4上形成ALD膜5。CVD膜4填埋多孔质体1的孔1A，致密的ALD膜5能够覆盖密度稀疏且例如缺乏阻隔性的CVD膜4。由此，能够将多孔质体1的表面改性为例如具有疏水性或亲水性等特性的表面。
因此，在本实施方式中，如图4所示，控制部400以首先实施CVD处理、之后接着实施ALD处理的方式控制成膜装置10的各部分。而且，控制部400实现了CVD处理与ALD处理的共通化而使控制变得简便。CVD处理与ALD处理的共通化是指采用与在ALD处理中重复实施2次以上的ALD循环的一个循环同样的CVD处理。参照图5对CVD处理与ALD处理的共通化进行说明。
2.1.ALD处理
为了便于说明，首先，对ALD处理进行说明。ALD处理重复实施将第一工序～第四工序作为1个循环的ALD循环，直到得到ALD膜5的膜厚为止。
2.1.1.ALD循环的第一工序
在实施ALD循环时，首先，通过排气泵310对反应容器20内进行抽真空，将反应容器20内设定为例如10-4Pa。接着，作为ALD循环的第一工序，将第一阀120设为打开状态，将原料气体TDMAS供给至反应容器20内，将第一阀120关闭。由此，反应容器20内以比较低的压力例如1～10Pa充满原料气体。在ALD循环的第一工序中，TDMAS被吸附于支承部60上的成膜对象1的表面。
2.1.2.ALD循环的第二工序
第一工序开始后经过T1A时间后，作为ALD循环的第二工序，向反应容器20内导入例如吹扫气体，反应容器20内的气相中的原料气体TDMAS被排出，反应容器20内被置换为吹扫气体。将该排气时间设为T2A。
2.1.3.ALD循环的第三工序
接着，作为ALD循环的第三工序，通过使第二阀230成为打开状态，由反应气体活化装置210活化后的反应气体即OH自由基(OH*)被导入到反应容器20内。之后，关闭第二阀230，反应容器20内以比较低的压力充满反应气体。其结果，在成膜对象1的表面，TDMAS与OH自由基(OH*)反应。具体而言，TDMAS被OH自由基(OH*)氧化，生成氧化硅膜SiO2。由此，成膜对象1的表面被氧化硅膜覆盖。另外，在氧化硅膜上形成羟基(-OH)。在该羟基(-OH)上，有机金属气体在室温下也能够饱和吸附。因此，不需要在成膜中对成膜对象1进行强制加热。
2.1.4.ALD循环的第四工序
第三工序开始后经过T3A时间后，作为ALD循环的第四工序，向反应容器20内导入例如吹扫气体，反应容器20内的气相中的活化反应气体被排出，反应容器20内被置换为吹扫气体。第四工序的排气时间T4A例如可以与第二工序的排气时间T2A相等。
重复实施由该第一工序～第四工序构成的ALD循环直至得到ALD膜5的膜厚为止。在ALD循环中，由于在原子层水平上例如各沉积1埃＝0.1nm，因此例如为了形成10nm的膜厚，重复100次ALD循环即可。作为ALD循环的变形例，也可以在将原料气体TDMAS导入反应容器20内之前，在反应容器20内以规定的压力例如1～10Pa充满臭氧，然后用吹扫气体排出。通过导入臭氧，能够防止未反应的碳混入膜中。
2.2.CVD处理
如图5所示，CVD处理也与ALD循环同样地具有第一工序～第四工序。若将第一工序的时间设为T1C、将第二工序的时间设为T2C、将第三工序的时间设为T3C、将第四工序的时间设为T4C，则例如设定为T1C＝T2A、T2C＜T2A、T3C＝T3A以及T4C＝T4A。即，在CVD处理中，除了将第二工序的时间T2C设定为比ALD循环的第二工序的时间T2A短这一点之外，能够设定为与ALD循环相等。
在CVD处理中，由于第二工序的时间T2C短，因此反应容器20内的气相中的原料气体TDMAS未全部排气，一部分残留在反应容器20内的气相中。当在反应容器20内的气相中残留有原料气体TDMAS的状态下开始第三工序时，反应容器20内的气相中的原料气体TDMAS与导入的OH自由基(OH*)进行气相化学反应。即，实现了通过气相化学反应生成的氧化硅SiO2堆积在成膜对象1的表面的CVD处理。需要说明的是，在CVD处理中，不一定需要重复实施由第一～第四工序构成的一个循环。只要能够通过第一～第四工序得到所需的膜厚的CVD膜4，就不需要实施2个以上循环。
如上所述，ALD处理和CVD处理通过均实施ALD循环而被共通化，因此能够使2个不同的处理的控制简便。特别是，除了第二工序的时间T2C被设定为比ALD循环的第二工序的时间T2A短这一点以外，CVD处理与ALD循环相等地设定，由此能够使2个不同的处理的控制变得极其简便。
在本实施方式的CVD处理中，第一工序中的原料气体的供给和第三工序中的活化反应气体的供给不同时进行而是隔着第二工序分离进行。在本实施方式的CVD处理中，第一工序中的原料气体的压力能够与ALD循环的第一工序同样地设为较低的压力例如1～10Pa。在本实施方式的CVD中，第二工序的排气在使原料气体残留于反应容器20的气相中的状态下结束。这3个点与以往的CVD处理完全不同。作为这样实施CVD处理的理由，可以举出如下所述的3个。
一个原因在于，在第二工序的排气后，在反应容器20的气相中也残留有原料气体，因此通过第三工序导入反应容器20中的活化反应气体在气相中与原料气体反应，实现化学气相沉积(CVD)处理，而不是ALD处理。
另一个原因在于，即使不过度提高在第三工序中导入活化反应气体的压力，也可以通过第二工序的排气使压力比反应气体的导入压力低的原料气体不向第二供给管200及反应气体活化装置210逆流。若原料气体向第二供给管200及反应气体活化装置210逆流，则在那里与反应气体发生反应，第二供给管200及反应气体活化装置210被颗粒、副产物污染。在本实施方式中，能够防止那样的污染。导入活化反应气体的压力是能够在反应气体活化装置210中生成反应气体的等离子体的压力，例如为5～15Pa。若第二工序后的反应容器20内的第一压力P1比导入活化反应气体的压力P2低，则能够防止上述的逆流，因此需要第二工序。需要说明的是，由于在导入了活化反应气体之后阀230被关闭，因此在第三工序中，原料气体与反应气体不会在第二供给管200中发生反应。
再另一个原因在于，通过第二工序的排气，反应气体的压力也降低，因此与专利文献1那样的高压力下的反应不同，难以在反应容器20内产生颗粒、副产物。
需要说明的是，若使用例如氮化气体来代替作为形成金属氧化膜的情况下使用的反应气体的氧化气体，则能够形成金属氮化膜。在该情况下，作为反应气体的氮化气体，例如能够使用生成NH自由基的NH3。若使用例如TDMAS(SiH[N(CH3)2]3)作为原料气体，则能够将SiN成膜，若使用例如TDMAT(Ti[N(CH3)2]4)作为原料气体，则能够将TiN成膜。在任一情况下，都因NH自由基的存在而能够实现低温处理。
符号说明
1…成膜对象，1A…孔，2…水，3…等离子体，10…成膜装置，20…反应容器，30…原料气体导入口，40…反应气体导入口，50…排气口，60…支承部，100…第一供给管，110…原料气体容器，130…第一阀，200…第二供给管，210…反应气体活化装置，212…高频电源，220…反应气体容器，230…第二阀，270…感应线圈，300…排气管，310…排气泵，320…排气阀

Claims (6)

1.一种成膜方法，其是在成膜对象上进行CVD膜和ALD膜的成膜的成膜方法，其中，
在进行所述ALD膜的成膜的ALD处理中，重复实施2次以上ALD循环，所述ALD循环包括：
第一工序，其使配置有成膜对象的反应容器充满经由第一供给管导入的原料气体；
第二工序，其在所述第一工序后，对所述反应容器的气相中的所述原料气体进行排气；
第三工序，其在所述第二工序后，使所述反应容器充满在第二供给管内被电感耦合等离子体活化并经由所述第二供给管导入的反应气体；和
第四工序，其在所述第三工序后，将所述反应气体从所述反应容器排出；
在进行所述CVD膜的成膜的CVD处理中，至少实施1次所述ALD循环，且所述第二工序的排气在使所述原料气体残留于所述反应容器的气相中的状态下结束。
2.根据权利要求1所述的成膜方法，其中，
在所述ALD处理和所述CVD处理中，所述第一工序的时间被设定为实质上相等，
所述CVD处理中的所述第二工序的时间被设定为比所述ALD处理中的所述第二工序的时间短。
3.根据权利要求1或2所述的成膜方法，其中，
所述原料气体为有机金属气体，
所述反应气体为氧化气体。
4.根据权利要求1或2所述的成膜方法，其中，
所述原料气体为有机金属气体，
所述反应气体为氮化气体。
5.根据权利要求1～4中任一项所述的成膜方法，其中，
所述成膜对象为多孔质体，在进行成膜的面上具有开口的孔，
通过实施所述CVD处理而利用所述CVD膜堵塞所述开口，之后，通过实施所述ALD处理在所述CVD膜上进行所述ALD膜的成膜。
6.一种成膜装置，其中，所述成膜装置具有：
反应容器，其配置成膜对象；
第一供给管，其将原料气体供给至所述反应容器；
第二供给管，其与所述反应容器连接，供给反应气体；
反应气体活化装置，其利用电感耦合等离子体使所述第二供给部管内的所述反应气体活化；
排气部，其对所述反应容器内进行排气；和
控制部，其对CVD处理和ALD处理进行控制；
所述控制部使得：在所述ALD处理中重复实施2次以上ALD循环，该ALD循环包括：
第一工序，其经由所述第一供给管向配置有所述成膜对象的所述反应容器导入所述原料气体；
第二工序，其在所述第一工序后，利用所述排气部将所述原料气体从所述反应容器排出；
第三工序，其在所述第二工序后，将在所述第二供给管内被所述反应气体活化装置活化后的所述反应气体经由所述第二供给管导入至所述反应容器；和
第四工序，其在所述第三工序后，将所述反应气体从所述反应容器排出；
在所述CVD处理中，使所述ALD循环至少实施1次，且所述第二工序在使所述原料气体残留于所述反应容器的气相中的状态下结束。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080317972A1 (en) * 2007-06-21 2008-12-25 Asm International N.V. Method for depositing thin films by mixed pulsed cvd and ald
WO2013046157A1 (en) * 2011-09-27 2013-04-04 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing film depositions
US20160087028A1 (en) * 2013-05-21 2016-03-24 Toshiyuki Hirota Semiconductor device and method for manufacturing same
CN107768304A (zh) * 2016-08-16 2018-03-06 朗姆研究公司 用于在金属填充工艺期间防止线弯曲的方法
US20180082886A1 (en) * 2016-09-16 2018-03-22 Lam Research Corporation Temporally pulsed and kinetically modulated cvd dielectrics for gapfill applications

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482733B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
DE112008000368T5 (de) * 2007-02-12 2009-12-24 Lotus Applied Technology, LLC, Beaverton Herstellung von Verbundmaterialien unter Verwendung von Atomschichtabscheidung
JP5801916B2 (ja) * 2008-06-25 2015-10-28 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、および基板処理装置
JP5513767B2 (ja) * 2008-06-25 2014-06-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置および半導体装置
EP2628817B1 (en) * 2012-02-15 2016-11-02 IHI Hauzer Techno Coating B.V. A coated article of martensitic steel and a method of forming a coated article of steel
JP2014135311A (ja) * 2013-01-08 2014-07-24 Ps4 Luxco S A R L 半導体装置
WO2015145486A1 (ja) * 2014-03-28 2015-10-01 国立大学法人東北大学 プラズマ処理装置およびプラズマ処理方法
JP6486696B2 (ja) * 2015-01-15 2019-03-20 国立大学法人山形大学 薄膜堆積方法及び薄膜堆積装置
JP6935667B2 (ja) 2016-10-07 2021-09-15 東京エレクトロン株式会社 成膜方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080317972A1 (en) * 2007-06-21 2008-12-25 Asm International N.V. Method for depositing thin films by mixed pulsed cvd and ald
WO2013046157A1 (en) * 2011-09-27 2013-04-04 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing film depositions
US20160087028A1 (en) * 2013-05-21 2016-03-24 Toshiyuki Hirota Semiconductor device and method for manufacturing same
CN107768304A (zh) * 2016-08-16 2018-03-06 朗姆研究公司 用于在金属填充工艺期间防止线弯曲的方法
US20180082886A1 (en) * 2016-09-16 2018-03-22 Lam Research Corporation Temporally pulsed and kinetically modulated cvd dielectrics for gapfill applications

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