KR100819639B1 - 기판 처리 장치 및 반도체 디바이스의 제조 방법 - Google Patents
기판 처리 장치 및 반도체 디바이스의 제조 방법 Download PDFInfo
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- KR100819639B1 KR100819639B1 KR1020057017612A KR20057017612A KR100819639B1 KR 100819639 B1 KR100819639 B1 KR 100819639B1 KR 1020057017612 A KR1020057017612 A KR 1020057017612A KR 20057017612 A KR20057017612 A KR 20057017612A KR 100819639 B1 KR100819639 B1 KR 100819639B1
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Abstract
Description
Claims (10)
- 기판을 수용하는 처리실과, 그 기판을 가열하는 가열 부재를 가지며, 서로 반응하는 적어도 2 개의 가스를 교대로 상기 처리실 내에 공급하여 상기 기판의 표면에 원하는 막을 생성하는 기판 처리 장치로서,상기 2 개의 가스가 서로 독립적으로 각각 흐르는 2 개의 공급관과,상기 처리실 내에 가스를 공급하는 단일한 가스 공급 부재로서, 상기 2 개의 가스 중의 적어도 하나의 가스의 분해 온도 이상의 영역에 그 일부가 연장되어 있는 상기 단일한 가스 공급 부재를 구비하고,상기 2 개의 공급관을, 상기 적어도 하나의 가스의 분해 온도 미만의 장소에서, 상기 가스 공급 부재에 연결시켜, 상기 2 개의 가스를 상기 가스 공급 부재를 통해 상기 처리실 내에 각각 공급하는 것을 특징으로 하는 기판 처리 장치.
- 제1항에 있어서, 상기 가스 공급 부재가, 다수의 가스 분출구를 가진 노즐인 것을 특징으로 하는 기판 처리 장치.
- 제2항에 있어서, 상기 처리실을 형성하고, 적층된 복수의 기판을 수용가능한 반응관을 더 구비하고, 상기 노즐이, 상기 반응관의 하부로부터 상부에 걸쳐 상기 기판의 적재 방향을 따라 설치되어 있는 것을 특징으로 하는 기판 처리 장치.
- 제1항에 있어서, 상기 2 개의 공급관과 상기 가스 공급 부재의 연결 개소는, 상기 처리실 내인 것을 특징으로 하는 기판 처리 장치.
- 제1항에 있어서, 상기 가스 공급 부재의 내벽에, 상기 적어도 2 개의 가스의 반응에 의해 생성되는 막이 부착되는 것을 특징으로 하는 기판 처리 장치.
- 제5항에 있어서, 클리닝 가스를 상기 가스 공급 부재를 통해 상기 처리실 내에 공급하여, 상기 처리실의 클리닝과 상기 가스 공급 부재에 부착된 막의 제거를 실시하는 것을 특징으로 하는 기판 처리 장치.
- 제1항에 있어서, 상기 가스는 트리메틸알루미늄과 오존으로서, 상기 기판의 표면에 알루미늄 산화막을 생성하는 것을 특징으로 하는 기판 처리 장치.
- 제1항에 있어서, 상기 가스는, 테트라키스(N-에틸-N-메틸아미노)하프늄과 오존으로서, 상기 기판의 표면에 하프늄 산화막을 생성하는 것을 특징으로 하는 기판 처리 장치.
- 기판을 수용하는 처리실과, 상기 처리실의 외측에 배치되고, 상기 기판을 가열하는 가열 부재를 가지며, 서로 반응하는 적어도 2 개의 가스를 교대로 상기 처리실 내에 공급하여 상기 기판의 표면에 원하는 막을 생성하는 핫월식의 처리로를 구비한 기판 처리 장치로서,상기 2 개의 가스가 서로 독립적으로 각각 흐르는 2 개의 공급관과,상기 처리실 내에 가스를 공급하는 단일한 가스 공급 부재로서, 그 일부가 상기 가열 부재의 내측에 배치된 상기 단일한 가스 공급 부재를 구비하고,상기 2 개의 공급관을, 상기 처리실 내의 상기 기판 부근의 온도보다도 낮은 온도의 영역에서, 상기 가스 공급 부재에 연결시켜, 상기 2 개의 가스를 상기 가스 공급 부재를 통해 상기 처리실 내에 각각 공급하는 것을 특징으로 하는 기판 처리 장치.
- 기판을 수용하는 처리실과, 그 기판을 가열하는 가열 부재를 가지며, 서로 반응하는 적어도 2 개의 가스를 교대로 상기 처리실 내에 공급하여 상기 기판의 표면에 원하는 막을 생성하는 기판 처리 장치로서,상기 2 개의 가스가 서로 독립적으로 각각 흐르는 2 개의 공급관과,상기 처리실 내에 가스를 공급하는 단일한 가스 공급 부재로서, 상기 2 개의 가스 중의 적어도 하나의 가스의 분해 온도 이상의 영역에 그 일부가 연장되어 있는 상기 단일한 가스 공급 부재를 구비하고,상기 2 개의 공급관을, 상기 적어도 하나의 가스의 분해 온도 미만의 장소에서, 상기 가스 공급 부재에 연결시켜, 상기 2 개의 가스를 상기 가스 공급 부재를 통해 상기 처리실 내에 각각 공급하는 기판 처리 장치를 사용하고,상기 2 개의 가스를 상기 가스 공급 부재를 통해 상기 처리실 내에 교대로 공급하여, 상기 기판의 표면에 상기 원하는 막을 생성하는 것을 특징으로 하는 반도체 디바이스의 제조 방법.
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US20060258174A1 (en) | 2006-11-16 |
US20120034788A1 (en) | 2012-02-09 |
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