CN1762042A - 衬底处理装置及半导体装置的制造方法 - Google Patents

衬底处理装置及半导体装置的制造方法 Download PDF

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CN1762042A
CN1762042A CNA200480007520XA CN200480007520A CN1762042A CN 1762042 A CN1762042 A CN 1762042A CN A200480007520X A CNA200480007520X A CN A200480007520XA CN 200480007520 A CN200480007520 A CN 200480007520A CN 1762042 A CN1762042 A CN 1762042A
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process chamber
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CN100367459C (zh
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境正宪
加贺谷彻
山崎裕久
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Kokusai Electric Corp
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Abstract

本发明提供一种衬底处理装置，具有反应管203、加热硅晶片200的加热器207，将三甲基铝(TMA)和臭氧(O3)交替供给至反应管203内，从而在晶片200的表面形成Al2O3膜，所述装置的特征为，具有使臭氧和TMA分别流通的供给管232a、232b、以及向反应管203内供给气体的喷嘴233，使2根供给管232a、232b在反应管203内低于晶片200附近温度的温度区域与配置于加热器207内侧的喷嘴233连接，臭氧和TMA通过喷嘴233分别供给至反应管203内。

Description

衬底处理装置及半导体装置的制造方法
技术领域
本发明涉及衬底处理装置及半导体装置的制造方法，特别涉及制造Si半导体装置时使用的采用ALD(Atomic layer Deposition)法进行成膜的半导体制造装置及采用ALD法的半导体装置制造方法。
背景技术
首先简单地说明采用作为CVD(Chemical Vapor Deposition)法之一的ALD法进行的成膜处理。
ALD法是在一定的成膜条件(温度、时间等)下，将成膜所使用的2种(或2种以上)原料气体每种交替地供给至衬底上，使其以单原子层单位进行吸附，并利用表面反应进行成膜的方法。
即，在例如形成Al2O3(酸化铝)膜时，可以利用ALD法交替供给TMA(Al(CH3)3、三甲基铝)和O3(臭氧)，由此可以在250～450℃的低温下进行高品质的成膜。如上所述，采用ALD法，每种交替地供给多种反应性气体进行成膜。膜厚由供给反应性气体的循环数进行控制。例如，当成膜速度为1/循环时，形成20的膜需要进行20次循环的成膜处理。
目前，形成Al2O3膜的ALD装置采用在1个处理炉内同时处理的衬底张数为1张～5张的、称为单张装置的形式，将25张或25张以上的衬底在反应管的管轴方向平行地排列的、称为分批式装置的装置形式未被实用化。
使用TMA和O3在上述竖式分批式装置中形成Al2O3膜时，当将TMA的喷嘴和O3的喷嘴分别竖立在反应炉内时，在TMA的气体喷嘴内TMA分解形成Al(铝)膜，变厚剥落时可能成为异物产生源。
本发明的主要目的为提供一种通过防止在喷嘴内生成膜，从而可以抑制膜剥落而产生异物的衬底处理装置及半导体装置的制造方法。
发明内容
本发明的方案之一为提供一种衬底处理装置，所述装置具有容纳衬底的处理室和加热所述衬底的加热部件，将相互反应的至少2种气体交替供给至所述处理室内，从而在所述衬底的表面形成希望的膜，该装置的其特征为，具有使所述2种气体相互独立地分别流通的2根供给管和下述单一的气体供给部件，该单一的气体供给部件向所述处理室内供给气体，其中的一部分延伸存在于所述2种气体中至少一种气体的分解温度或分解温度以上的区域中；所述2根供给管在低于所述至少1种气体的分解温度的位置与所述气体供给部件连接，所述2种气体分别通过所述气体供给部件供给至所述处理室内。
本发明的其它方案为提供一种衬底处理装置，所述装置具有容纳衬底的处理室和配置在所述处理室外侧、用于加热所述衬底的加热部件，具备通过向所述处理室内交替供给相互反应的至少2种气体从而在所述衬底的表面形成希望的膜的热壁式处理炉，该装置的特征为，具有使所述2种气体相互独立地分别流通的2根供给管和下述单一的气体供给部件，所述部件向所述处理室内供给气体，其一部分配置于所述加热部件的内侧；所述2根供给管在所述处理室内的低于所述衬底附近温度的温度区域与所述气体供给部件连接，所述2种气体分别通过所述气体供给部件供给至所述处理室内。
本发明的另一方案为提供一种制造半导体装置的方法，其特征为，使用下述衬底处理装置，通过所述气体供给部件向所述处理室内交替供给所述2种气体从而在所述衬底的表面形成希望的膜，前述衬底处理装置具有容纳衬底的处理室和加热所述衬底的加热部件，将相互反应的至少2种气体交替供给至所述处理室内从而在所述衬底的表面形成希望的膜，该装置具有分别使所述2种气体相互独立地分别流通的2根供给管和下述单一的气体供给部件，该单一气体供给部件向所述处理室内供给气体，该部件的一部分延伸存在于所述2种气体中至少一种气体的分解温度或分解温度以上的区域中；所述2根供给管在低于所述至少1种气体的分解温度的位置与所述气体供给部件连接，所述2种气体分别通过所述气体供给部件供给至所述处理室内。
附图说明
图1为本发明实施例之一的衬底处理装置中竖式衬底处理炉的纵剖面简图。
图2为本发明实施例之一的衬底处理装置中竖式衬底处理炉的横截面简图。
图3A为用于说明本发明实施例之一的衬底处理装置中竖式衬底处理炉的喷嘴233的简图。
图3B为图3A的A部分的部分放大图。
图4为用于说明本发明实施方案之一的衬底处理装置的简要斜视图。
具体实施方式
本发明优选实施例的分批式处理装置中，原料使用三甲基铝(化学式Al(CH3)3、TMA)和臭氧(O3)，具有能够保持多张衬底的衬底保持夹具、插入所述衬底保持夹具以实施衬底处理的反应管、加热衬底的加热单元、能够排出反应管内气体的真空排气装置、以及一只从平行于衬底面方向向衬底喷出气体的气体喷嘴，连接在所述喷嘴上的TMA和O3的气体供给管路在反应室内合流，将TMA和O3交替供给至衬底上从而形成铝氧化膜(Al2O3膜)。需要说明的是，衬底上吸附TMA，随后流入的O3气体与吸附的TMA反应，从而形成单原子层的Al2O3膜。
TMA在压力、温度同时升高时容易发生自身分解而生成Al膜。上述气体喷嘴上设置有喷出气体的喷嘴孔，由于该喷嘴孔较小，因此喷嘴内压力较炉压力高。例如，可预想当炉内压力为0.5Torr(约67Pa)时，喷嘴内压力为10Torr(约1330Pa)。因此，特别是位于高温区域的喷嘴内的TMA容易发生自身分解。相反，虽然炉内温度较高，但压力却并不高于喷嘴内，因此TMA难以发生自身分解。所以喷嘴内的Al膜形成问题较为显著。
为了除去反应管内壁上附着的Al2O3膜，通入CIF3气体进行清洁，从喷嘴供给该清洁气体时，喷嘴内的Al2O3膜也可以同时除去，能够容易、有效地进行清洁。
本发明不仅适用于生成Al2O3膜，还优选适用于生成HfO2膜。因为Hf原料存在与TMA同样的问题。需要说明的是，此时交替流入气化的四(N-乙基-N-甲基氨基)铪(常温下为液体)的Hf原料气体和O3气体以形成HfO2膜。
另外，本发明也适用于利用以下材料形成SiO2膜的情况。
(1)交替通入O3和Si2Cl6(六氯化二硅烷)，采用ALD法形成SiO2膜。
(2)交替通入O3和HSi(OC2H5)3(TRIES)，采用ALD法形成SiO2膜。
(3)交替通入O3和HSi[N(CH3)2]3(TrisDMAS)，采用ALD法形成SiO2膜。
实施例1
图1为本实施例的竖式衬底处理炉的结构简图，处理炉部分以纵剖面示出，图2为本实施例的竖式衬底处理炉的结构简图，处理炉部分以横截面示出。图3A为说明本实施例的衬底处理装置中竖式衬底处理炉的喷嘴233的简图，图3B为图3A的A部分的部分放大图。
作为加热单元的加热器207内侧设置有处理作为衬底的晶片200的反应容器203，该反应管203的下端连接有例如由不锈钢等制成的歧管(manifold)209，歧管209下端的开口由作为盖体的密封盖219经作为气密部件的O型圈220气密性地封闭，至少由所述加热器207、反应管203、歧管209、及密封盖219形成处理炉202。所述歧管209被固定在保持单元(以下称为加热器底座251)上。
反应管203的下端部及歧管209的上部开口端部分别设置有环状的凸缘，在所述凸缘之间配置有气密部件(以下指O型圈220)将二者之间进行气密性密封。
密封盖219上通过石英盖218立设有作为衬底保持单元的螺柱217，石英盖218成为载置螺柱217的载置体。螺柱217被插入处理炉202中。在螺柱217上，进行分批处理的多张晶片200被以水平姿势在管轴方向上多段地装载。加热器207将插入处理炉203中的晶片200加热至规定的温度。
设置作为向处理炉202供给多种气体、此处为2种气体的供给管的2根气体供给管232a、232b。气体供给管232a、232b设置为与歧管209的下部连通，气体供给管232b在处理炉202内与气体供给管232a合流，2根气体供给管232a、232b与一个多孔喷嘴233连通。喷嘴233被设置在处理炉202内，其上部延伸存在于从气体供给管232b供给的TMA的分解温度或该温度以上的区域。但是气体供给管232b在处理炉202内与气体供给管232a合流的位置为低于TMA的分解温度的区域、低于晶片200及晶片200附近温度的区域。此处，经由作为流量控制单元的第1质量流量控制器241a及作为开闭阀的第1阀243a，进而通过后述设置于处理炉202内的多孔喷嘴233，从第1气体供给管232a向处理炉202中供给反应气体(O3)，经由作为流量控制单元的第2质量流量控制器241b、作为开闭阀的第2阀252、TMA容器260、及作为开闭阀的第3阀250，并经由前述多孔喷嘴233从第2气体供给管232b向处理炉202供给反应气体(TMA)。从TMA容器260到歧管209的气体供给管232b中设置有加热器300，将气体供给管232b保持在50～60℃。
气体供给管232b中经由开闭阀253在第3阀250的下游侧连接有惰性气体的管路232c。另外，气体供给管232a中经由开闭阀254在第1阀243a的下游侧连接有惰性气体的管路232d。
处理炉202通过排气的气体排气管231，经由第4阀243d连接在作为排气单元的真空泵246上，能够进行真空排气。应予说明，该第4阀243d为具有下述功能的开闭阀，即，可以通过开闭阀门而将处理炉202真空排气·停止真空排气，并且可以通过调节阀的开闭程度而调整压力。
从反应管203下部到上部沿着晶片200的装载方向配置喷嘴233。并且喷嘴233中设置有多个供给气体的气体供给孔248b。
反应管203内的中央部设置有将多张晶片200以相同间隔多段载置的螺柱217，所述螺柱217能够通过图中未标记的螺柱升降机构出入反应管203。另外，为了提高处理的均匀性，设置有用于旋转螺柱217的作为旋转单元的螺柱旋转机构267，通过旋转螺柱旋转机构267，可使载置于石英盖218上的螺柱217旋转。
作为控制单元的控制器121，与第1、第2质量流量控制器241a、241b、第1～第4阀243a、252、250、243d、阀253、254、加热器207、真空泵246、螺柱旋转机构267、图中未标记的螺柱升降机构连接，对第1、第2质量流量控制器241a、241b的流量调整、第1～第3阀243a、252、250、及阀253、254的开闭操作、第4阀243d的开闭及压力调整操作、加热器207的温度调节、真空泵246的起动·停止、螺柱旋转机构267的旋转速度调节、螺柱升降机构的升降移动进行控制。
下面，以采用ALD法成膜为例来说明利用TMA及O3气体形成Al2O3膜的情况。
首先，将需要成膜的半导体硅晶片200装填在螺柱217上并送入处理炉202内。送入后，依次进行下述3步步骤。
[步骤1]
步骤1中流入O3气体。首先同时打开设置在第1气体供给管232a上的第1阀243a、及设置在气体排气管231上的第4阀243d，一边从第1气体供给管232a将经由第1质量流量控制器243a调整了流量的O3气体从喷嘴233的气体供给孔248b供给至处理炉202，一边从气体排气管231排气。流入O3气体时，恰当地调节第4阀243d，使处理炉202内压力为10～100Pa。由第1质量流量控制器241a控制的O3的供给流量为1000～10000sccm。晶片200暴露于O3中的时间为2～120秒。此时加热器207的温度设定为能够使晶片温度为250～450℃的温度。
同时打开开闭阀253，从连接在气体供给管232b管路中途的惰性气体管路232c流入惰性气体，则可以防止O3气体蔓延至TMA侧。
此时，流入处理炉202内的气体仅为O3、和N2、Ar等惰性气体而并无TMA。因此O3并不发生气相反应，而与晶片200上的基底膜发生表面反应。
[步骤2]
在步骤2中，关闭第1气体供给管232a的第1阀243a，停止O3的供给。然后在开启气体排气管231的第4阀243d的状态下通过真空泵246将处理炉202排气至20Pa或20Pa以下，将残留O3排出至处理炉202外。此时，如果从作为O3供给管路的第1气体供给管232a及作为TMA供给管路的第2气体供给管232b分别向处理炉202内供给N2等惰性气体，则可以进一步提高排出残留O3的效果。
[步骤3]
在步骤3中流入TMA气体。TMA在常温下为液体，向处理炉202供给时，有经加热使其气化后供给的方法，将称为载气的氮气、稀有气体等惰性气体通入TMA容器260中，气化的部分与载气一同供给至处理炉的方法等，以后者为例进行说明。首先同时打开设置在载气供给管232b上的阀252、设置在TMA容器260和处理炉202之间的阀250、及设置在气体排气管231中的第4阀243d，经由第2质量流量控制器241b调整了流量的载气从载气供给管232b通过TMA容器260，形成TMA和载气的混合气体，一边将混合气体从喷嘴233的气体供给孔248b向处理炉202供给，一边从气体排气管231排出。流入TMA气体时，恰当地调整第4阀243d，使处理炉202内压力为10～900Pa。经由第2质量流量控制器241a控制的载气的供给流量为10000sccm或10000sccm以下。供给TMA的时间设定为1～4秒。随后为了使其进一步吸附，也可以将在升高的压力气氛中暴露的时间设定为0～4秒。此时，晶片温度与供给O3时相同，为250～450℃。供给TMA可使基底膜上的O3和TMA发生表面反应，从而在晶片200上形成Al2O3膜。
同时打开开闭阀254，从连接在气体供给管232a管路中途的惰性气体管路232d流入惰性气体，则可以防止TMA气体蔓延至O3侧。
成膜后，关闭阀250，打开第4阀243d，对处理炉202进行真空排气，排除参与TMA成膜后的残留气体。此时，如果从作为O3供给管路的第1气体供给管232a及作为TMA供给管路的第2气体供给管232b分别向处理炉202供给N2等惰性气体，则可以进一步提高将参与TMA成膜后的残留气体从处理炉202排除的效果。
上述步骤1～3为1个循环，将所述循环多次反复即可在晶片200上形成规定膜厚的Al2O3膜。
由于在将处理炉202内排气、除去O3气体后再流入TMA，因此二者在流向晶片200的途中不发生反应。可使供给的TMA仅与吸附在晶片200上的O3有效地发生反应。
另外，将作为O3供给管路的第1气体供给管232a及作为TMA供给管路的第2气体供给管232b在处理炉202内合流，使TMA和O3在喷嘴233内也交替吸附、反应，从而可以得到Al2O3堆积膜，不存在将TMA和O3以不同的喷嘴供给时TMA喷嘴内生成可能成为异物发生源的Al膜的问题。Al2O3膜的密合性较Al膜良好、不易剥离，因此不易成为异物发生源。
下面参照图4，对作为适用于本发明的衬底处理装置优选例之一的半导体制造装置进行简要说明。
箱体101内部的前面侧设置有盒载置台105，该盒载置台105作为保持器交接部件在未图示的外部搬运装置之间交接作为衬底容纳容器的盒100，盒载置台105的后侧设置有作为升降单元的盒升降机115，盒升降机115中安装有作为搬运单元的盒移载机114。另外，盒升降机115的后侧设置有作为盒100的载置单元的盒架109，同时盒载置台105上方也设置有预备盒架110。预备盒架110上方设置有清洁单元118，其构成为使清洁空气在箱体101的内部流通。
箱体101的后部上方设置有处理炉202，处理炉202的下方设置有使螺柱217在处理炉202中升降的、作为升降单元的螺柱升降机121，所述螺柱217作为衬底保持单元将作为衬底的晶片200以水平姿势多段地保持。安装在螺柱升降机121上的升降部件122的前端部设置有作为盖体的密封盖219，其垂直地支持着螺柱217。螺柱升降机121和盒架109之间设置有作为升降单元的移载升降机113，移载升降机113上安装有作为搬运单元的晶片移载机112。另外，螺柱升降机121的旁边设置有具备开闭结构的、作为用于堵住处理炉202下面的遮蔽部件的炉口堵板116。
在晶片200垂直的状态下将装填晶片200的盒100从未图示的外部搬运装置搬运至盒载置台105，为使晶片200处于水平姿势，可以在盒载置台105上旋转90℃。进而，在盒升降机115的升降移动、横向移动及盒移载机114的进退移动、旋转移动的协动下，将盒100从盒载置台105搬运至盒架109或者预备盒架110上。
盒架109中具有容纳作为晶片移载机112搬运对象的盒100的移载架123，将晶片200供给移载的盒100经由盒升降机115、盒移载机114移载至移载架123。
当盒100被移载至移载架123上后，在晶片移载机112的进退移动、旋转移动及移载升降机113的升降移动的协动下，将晶片200从移载架123移载至下降状态的螺柱217上。
在螺柱217中移载规定张数的晶片200时，经螺柱升降机121将螺柱217插入处理炉202，并用密封盖219对处理炉202进行气密封闭。在气密性封闭后的处理炉202内，加热晶片200，同时向处理炉202内供给处理气体，对晶片200实施处理。
对晶片200的处理结束后，以与上述操作相反的顺序将晶片200从螺柱217移载至移载架123的盒100中，经盒移载机114将盒100从移载架123移载至盒载置台105上，经未图示的外部搬运装置搬至箱体101的外部。需要说明的是，炉口堵板116在螺柱217处于下降状态时堵塞处理炉202的下面，防止外界气体被吸入处理炉202内。
所述盒移载机114等的搬运动作受搬运控制单元124的控制。
2003年8月15日提出的日本专利申请2003-293953中公开的全部内容，包括说明书、权利要求书、附图、以及说明书摘要被直接引用并编入本申请中。
产业实用性
如上所述，本发明的第一种方案可以使用批量生产性良好的分批式处理装置以ALD法形成Al2O3膜等，同时能够抑制在喷嘴内形成Al膜等副产物。结果本发明特别优选适用于对半导体晶片进行处理的衬底处理装置、及使用所述装置的装置的制造方法中。

Claims (10)

1、一种衬底处理装置，所述装置具有容纳衬底的处理室和加热所述衬底的加热部件，将相互反应的至少2种气体交替供给至所述处理室内，在所述衬底的表面形成所希望的膜，
该装置的特征为，具有使所述2种气体分别相互独立地流通的2根供给管和单一的气体供给部件，该单一的气体供给部件向所述处理室内供给气体，所述气体供给部件的一部分延伸存在于所述2种气体中至少一种气体的分解温度或分解温度以上的区域中；
所述2根供给管在低于所述至少1种气体的分解温度的位置与所述气体供给部件连接，将所述2种气体分别通过所述气体供给部件供给至所述处理室内。
2、如权利要求1所述的衬底处理装置，其特征为，所述气体供给部件为具有多个气体喷出口的喷嘴。
3、如权利要求2所述的衬底处理装置，其特征为，该装置还具有形成了所述处理室、能够容纳叠层的多张衬底的反应管，由反应管的下部至上部沿着所述衬底的装载方向设置所述喷嘴。
4、如权利要求1所述的衬底处理装置，其特征为，所述2根供给管和所述气体供给部件的连接部位在所述处理室内。
5、如权利要求1所述的衬底处理装置，其特征为，所述气体供给部件的内壁上附着有所述至少2种气体发生反应而生成的膜。
6、如权利要求5所述的衬底处理装置，其特征为，清洁气体经由所述气体供给部件供给至所述处理室内，对所述处理室进行清洁和除去附着在所述气体供给部件上的膜。
7、如权利要求1所述的衬底处理装置，其特征为，所述气体为三甲基铝和臭氧，在所述衬底的表面形成铝氧化膜。
8、如权利要求1所述的衬底处理装置，其特征为，所述气体为四(N-乙基-N-甲基氨基)铪和臭氧，在所述衬底表面形成铪氧化膜。
9、一种衬底处理装置，所述装置具有容纳衬底的处理室和配置在所述处理室外侧的用于加热所述衬底的加热部件，具备通过向所述处理室内交替供给相互反应的至少2种气体从而在所述衬底的表面形成所希望的膜的热壁式处理炉，
该装置的特征为，具有使所述2种气体相互独立地分别流通的2根供给管和单一的气体供给部件，所述部件向所述处理室内供给气体，该部件的一部分配置于所述加热部件的内侧；
所述2根供给管在所述处理室内低于所述衬底附近温度的温度区域与所述气体供给部件连接，将所述2种气体通过所述气体供给部件分别供给至所述处理室内。
10、一种制造半导体装置的方法，其特征为，使用下述衬底处理装置，通过所述气体供给部件向所述处理室内交替供给所述2种气体，从而在所述衬底的表面形成所希望的膜；
所述衬底处理装置具有容纳衬底的处理室和加热所述衬底的加热部件，将相互反应的至少2种气体交替供给至所述处理室内，从而在所述衬底的表面形成所希望的膜，
该装置的特征为，具有使所述2种气体相互独立地分别流通的2根供给管和单一的气体供给部件，该单一的气体供给部件向所述处理室内供给气体，该部件的一部分延伸存在于所述2种气体中至少一种气体的分解温度或分解温度以上的区域中；
所述2根供给管在低于所述至少1种气体的分解温度的位置与所述气体供给部件连接，所述2种气体通过所述气体供给部件分别供给至所述处理室内。
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