JP5086452B2 - インジウムターゲット及びその製造方法 - Google Patents

インジウムターゲット及びその製造方法 Download PDF

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Publication number
JP5086452B2
JP5086452B2 JP2011026090A JP2011026090A JP5086452B2 JP 5086452 B2 JP5086452 B2 JP 5086452B2 JP 2011026090 A JP2011026090 A JP 2011026090A JP 2011026090 A JP2011026090 A JP 2011026090A JP 5086452 B2 JP5086452 B2 JP 5086452B2
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Japan
Prior art keywords
target
indium
crystal structure
sputtering
indium target
Prior art date
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Active
Application number
JP2011026090A
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English (en)
Japanese (ja)
Other versions
JP2012162792A (ja
Inventor
瑶輔 遠藤
勝 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
Original Assignee
JX Nippon Mining and Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp
Priority to JP2011026090A priority Critical patent/JP5086452B2/ja
Priority to KR1020127015985A priority patent/KR101261202B1/ko
Priority to CN201180004828.9A priority patent/CN102782181B/zh
Priority to PCT/JP2011/070388 priority patent/WO2012108074A1/ja
Priority to TW100133128A priority patent/TWI398409B/zh
Publication of JP2012162792A publication Critical patent/JP2012162792A/ja
Application granted granted Critical
Publication of JP5086452B2 publication Critical patent/JP5086452B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2011026090A 2011-02-09 2011-02-09 インジウムターゲット及びその製造方法 Active JP5086452B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011026090A JP5086452B2 (ja) 2011-02-09 2011-02-09 インジウムターゲット及びその製造方法
KR1020127015985A KR101261202B1 (ko) 2011-02-09 2011-09-07 인듐 타깃 및 그 제조 방법
CN201180004828.9A CN102782181B (zh) 2011-02-09 2011-09-07 铟靶材及其制造方法
PCT/JP2011/070388 WO2012108074A1 (ja) 2011-02-09 2011-09-07 インジウムターゲット及びその製造方法
TW100133128A TWI398409B (zh) 2011-02-09 2011-09-15 Indium target and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011026090A JP5086452B2 (ja) 2011-02-09 2011-02-09 インジウムターゲット及びその製造方法

Publications (2)

Publication Number Publication Date
JP2012162792A JP2012162792A (ja) 2012-08-30
JP5086452B2 true JP5086452B2 (ja) 2012-11-28

Family

ID=46638308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011026090A Active JP5086452B2 (ja) 2011-02-09 2011-02-09 インジウムターゲット及びその製造方法

Country Status (5)

Country Link
JP (1) JP5086452B2 (zh)
KR (1) KR101261202B1 (zh)
CN (1) CN102782181B (zh)
TW (1) TWI398409B (zh)
WO (1) WO2012108074A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4948634B2 (ja) 2010-09-01 2012-06-06 Ｊｘ日鉱日石金属株式会社 インジウムターゲット及びその製造方法
JP5074628B1 (ja) 2012-01-05 2012-11-14 Ｊｘ日鉱日石金属株式会社 インジウム製スパッタリングターゲット及びその製造方法
US9761421B2 (en) 2012-08-22 2017-09-12 Jx Nippon Mining & Metals Corporation Indium cylindrical sputtering target and manufacturing method thereof
CN102925868B (zh) * 2012-11-29 2014-12-10 研创应用材料（赣州）有限公司 一种制备铟靶材金属薄膜的方法
JP5746252B2 (ja) * 2013-03-28 2015-07-08 光洋應用材料科技股▲分▼有限公司 正方晶系結晶構造を有するインジウムターゲット
CN104919080B (zh) 2013-07-08 2018-10-16 Jx日矿日石金属株式会社 溅射靶及其制造方法
CN108165936A (zh) * 2017-12-21 2018-06-15 清远先导材料有限公司 制备铟靶材的方法
CN113652652B (zh) * 2021-07-20 2023-04-07 先导薄膜材料（广东）有限公司 一种铟靶材及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63241167A (ja) * 1987-03-30 1988-10-06 Seiko Epson Corp スパツタリング用タ−ゲツト
JPS63262461A (ja) * 1987-04-21 1988-10-28 Mitsubishi Kasei Corp スパツタリングタ−ゲツト
JPS6411968A (en) * 1987-07-06 1989-01-17 Seiko Epson Corp Manufacture of sputtering target
JP2952853B2 (ja) * 1988-05-17 1999-09-27 株式会社日立製作所 スパツタリング用ターゲットの製造方法
JP3250241B2 (ja) * 1991-11-06 2002-01-28 大同特殊鋼株式会社 ターゲット材とその製造方法
JPH11158612A (ja) * 1997-12-01 1999-06-15 Mitsubishi Materials Corp 溶解ルテニウムスパッタリングターゲット
GB2343684B (en) * 1998-06-17 2003-04-23 Tanaka Precious Metal Ind Sputtering target material
DE10063383C1 (de) * 2000-12-19 2002-03-14 Heraeus Gmbh W C Verfahren zur Herstellung eines Rohrtargets und Verwendung
JP4170003B2 (ja) * 2002-03-27 2008-10-22 三菱マテリアル株式会社 スパッタリング用ターゲットの製造方法
JP4204823B2 (ja) * 2002-08-29 2009-01-07 三菱マテリアル株式会社 スパッタリング用ターゲット、その製造方法及びターゲット部材
JP2005113174A (ja) * 2003-10-03 2005-04-28 Tanaka Kikinzoku Kogyo Kk スパッタリング用ルテニウムターゲット及びスパッタリング用ルテニウムターゲットの製造方法
JP4528995B2 (ja) * 2007-08-02 2010-08-25 国立大学法人東北大学 Ｓｉバルク多結晶インゴットの製造方法
JP5201446B2 (ja) * 2008-02-26 2013-06-05 三菱マテリアル株式会社 ターゲット材およびその製造方法
JP4992843B2 (ja) * 2008-07-16 2012-08-08 住友金属鉱山株式会社 インジウムターゲットの製造方法

Also Published As

Publication number Publication date
KR20120115971A (ko) 2012-10-19
CN102782181A (zh) 2012-11-14
WO2012108074A1 (ja) 2012-08-16
TWI398409B (zh) 2013-06-11
CN102782181B (zh) 2015-11-25
TW201233632A (en) 2012-08-16
JP2012162792A (ja) 2012-08-30
KR101261202B1 (ko) 2013-05-10

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