JP5059608B2 - リバーストーン処理を利用したリセス構造の形成方法 - Google Patents

リバーストーン処理を利用したリセス構造の形成方法 Download PDF

Info

Publication number
JP5059608B2
JP5059608B2 JP2007527480A JP2007527480A JP5059608B2 JP 5059608 B2 JP5059608 B2 JP 5059608B2 JP 2007527480 A JP2007527480 A JP 2007527480A JP 2007527480 A JP2007527480 A JP 2007527480A JP 5059608 B2 JP5059608 B2 JP 5059608B2
Authority
JP
Japan
Prior art keywords
layer
multilayer structure
etching
shape
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2007527480A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008517448A (ja
JP2008517448A5 (enExample
Inventor
スリニーヴァッサン，シトルガタ・ヴイ
Original Assignee
モレキュラー・インプリンツ・インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by モレキュラー・インプリンツ・インコーポレーテッド filed Critical モレキュラー・インプリンツ・インコーポレーテッド
Publication of JP2008517448A publication Critical patent/JP2008517448A/ja
Publication of JP2008517448A5 publication Critical patent/JP2008517448A5/ja
Application granted granted Critical
Publication of JP5059608B2 publication Critical patent/JP5059608B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H10P76/4085—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
    • H10P50/695—
    • H10W20/089—
    • H10W20/091—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007527480A 2004-05-21 2005-05-19 リバーストーン処理を利用したリセス構造の形成方法 Expired - Lifetime JP5059608B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US85087604A 2004-05-21 2004-05-21
US10/850,876 2004-05-21
US10/946,570 US7186656B2 (en) 2004-05-21 2004-09-21 Method of forming a recessed structure employing a reverse tone process
US10/946,570 2004-09-21
PCT/US2005/017756 WO2005114719A2 (en) 2004-05-21 2005-05-19 Method of forming a recessed structure employing a reverse tone process

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011264596A Division JP5563544B2 (ja) 2004-05-21 2011-12-02 表面にリセスを形成する方法

Publications (3)

Publication Number Publication Date
JP2008517448A JP2008517448A (ja) 2008-05-22
JP2008517448A5 JP2008517448A5 (enExample) 2008-07-03
JP5059608B2 true JP5059608B2 (ja) 2012-10-24

Family

ID=35429090

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007527480A Expired - Lifetime JP5059608B2 (ja) 2004-05-21 2005-05-19 リバーストーン処理を利用したリセス構造の形成方法
JP2011264596A Expired - Lifetime JP5563544B2 (ja) 2004-05-21 2011-12-02 表面にリセスを形成する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011264596A Expired - Lifetime JP5563544B2 (ja) 2004-05-21 2011-12-02 表面にリセスを形成する方法

Country Status (7)

Country Link
US (1) US7186656B2 (enExample)
EP (1) EP1761949A4 (enExample)
JP (2) JP5059608B2 (enExample)
KR (1) KR101139302B1 (enExample)
CN (1) CN101356303B (enExample)
TW (1) TWI289326B (enExample)
WO (1) WO2005114719A2 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323417B2 (en) * 2004-09-21 2008-01-29 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7906180B2 (en) * 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7384569B1 (en) * 2004-08-02 2008-06-10 Advanced Micro Devices, Inc. Imprint lithography mask trimming for imprint mask using etch
US7547504B2 (en) * 2004-09-21 2009-06-16 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
US7252777B2 (en) * 2004-09-21 2007-08-07 Molecular Imprints, Inc. Method of forming an in-situ recessed structure
US7205244B2 (en) 2004-09-21 2007-04-17 Molecular Imprints Patterning substrates employing multi-film layers defining etch-differential interfaces
US7585424B2 (en) * 2005-01-18 2009-09-08 Hewlett-Packard Development Company, L.P. Pattern reversal process for self aligned imprint lithography and device
JP4247198B2 (ja) * 2005-03-31 2009-04-02 株式会社東芝 半導体装置の製造方法
US7482280B2 (en) * 2005-08-15 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a lithography pattern
US20070077763A1 (en) * 2005-09-30 2007-04-05 Molecular Imprints, Inc. Deposition technique to planarize a multi-layer structure
US7759253B2 (en) * 2006-08-07 2010-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method and material for forming a double exposure lithography pattern
US7767570B2 (en) * 2006-03-22 2010-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy vias for damascene process
US7776628B2 (en) * 2006-11-16 2010-08-17 International Business Machines Corporation Method and system for tone inverting of residual layer tolerant imprint lithography
WO2008157640A2 (en) 2007-06-18 2008-12-24 Illumina, Inc. Microfabrication methods for the optimal patterning of substrates
US8136224B1 (en) 2008-05-15 2012-03-20 Western Digital (Fremont), Llc Method and system for providing a perpendicular magnetic recording head utilizing a mask having an undercut line
WO2010010928A1 (ja) * 2008-07-24 2010-01-28 日産化学工業株式会社 コーティング組成物及びパターン形成方法
US8415010B2 (en) * 2008-10-20 2013-04-09 Molecular Imprints, Inc. Nano-imprint lithography stack with enhanced adhesion between silicon-containing and non-silicon containing layers
US8529778B2 (en) * 2008-11-13 2013-09-10 Molecular Imprints, Inc. Large area patterning of nano-sized shapes
WO2010111307A1 (en) * 2009-03-23 2010-09-30 Intevac, Inc. A process for optimization of island to trench ratio in patterned media
US8492009B1 (en) 2009-08-25 2013-07-23 Wd Media, Inc. Electrochemical etching of magnetic recording layer
NL2007161A (en) 2010-09-09 2012-03-12 Asml Netherlands Bv Lithography using self-assembled polymers.
US8828297B2 (en) 2010-11-05 2014-09-09 Molecular Imprints, Inc. Patterning of non-convex shaped nanostructures
US8778848B2 (en) 2011-06-09 2014-07-15 Illumina, Inc. Patterned flow-cells useful for nucleic acid analysis
EP2771103B1 (en) 2011-10-28 2017-08-16 Illumina, Inc. Microarray fabrication system and method
US8870345B2 (en) * 2012-07-16 2014-10-28 Xerox Corporation Method of making superoleophobic re-entrant resist structures
KR20140046266A (ko) * 2012-10-10 2014-04-18 삼성디스플레이 주식회사 패턴 형성 장치, 패턴 형성 장치의 제조 방법 및 패턴 형성 방법
US9105295B2 (en) * 2013-02-25 2015-08-11 HGST Netherlands B.V. Pattern tone reversal
KR102243630B1 (ko) 2013-12-30 2021-04-23 캐논 나노테크놀로지즈 인코퍼레이티드 20ｎｍ 이하 특징부의 균일한 임프린트 패턴 전사 방법
KR102279239B1 (ko) 2014-07-25 2021-07-19 삼성전자주식회사 임프린트 공정을 이용한 역상 패턴 전사방법
US10580659B2 (en) 2017-09-14 2020-03-03 Canon Kabushiki Kaisha Planarization process and apparatus
US10304744B1 (en) 2018-05-15 2019-05-28 International Business Machines Corporation Inverse tone direct print EUV lithography enabled by selective material deposition
US11398377B2 (en) 2020-01-14 2022-07-26 International Business Machines Corporation Bilayer hardmask for direct print lithography

Family Cites Families (128)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6053675B2 (ja) 1978-09-20 1985-11-27 富士写真フイルム株式会社 スピンコ−テイング方法
JPS5884808A (ja) 1981-11-13 1983-05-21 Nippon Synthetic Chem Ind Co Ltd:The 樹脂状物質の製造法
EP0091651B1 (en) 1982-04-12 1988-08-03 Nippon Telegraph And Telephone Corporation Method for forming micropattern
US4507331A (en) 1983-12-12 1985-03-26 International Business Machines Corporation Dry process for forming positive tone micro patterns
US4512848A (en) 1984-02-06 1985-04-23 Exxon Research And Engineering Co. Procedure for fabrication of microstructures over large areas using physical replication
JPS61190947A (ja) * 1985-02-19 1986-08-25 Toshiba Corp 微細パタ−ンの形成方法
EP0245461A1 (en) 1985-11-18 1987-11-19 EASTMAN KODAK COMPANY (a New Jersey corporation) Process for making optical recording media
US4657845A (en) 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
US4692205A (en) 1986-01-31 1987-09-08 International Business Machines Corporation Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings
FR2604553A1 (fr) 1986-09-29 1988-04-01 Rhone Poulenc Chimie Substrat polymere rigide pour disque optique et les disques optiques obtenus a partir dudit substrat
JPS63155621A (ja) 1986-12-18 1988-06-28 Oki Electric Ind Co Ltd 半導体装置の製造方法
US4931351A (en) 1987-01-12 1990-06-05 Eastman Kodak Company Bilayer lithographic process
US4731155A (en) 1987-04-15 1988-03-15 General Electric Company Process for forming a lithographic mask
KR930000293B1 (ko) 1987-10-26 1993-01-15 마쯔시다덴기산교 가부시기가이샤 미세패턴형성방법
US5028366A (en) 1988-01-12 1991-07-02 Air Products And Chemicals, Inc. Water based mold release compositions for making molded polyurethane foam
JPH01196749A (ja) 1988-01-30 1989-08-08 Hoya Corp 光情報記録媒体用基板の製造方法
US4891303A (en) 1988-05-26 1990-01-02 Texas Instruments Incorporated Trilayer microlithographic process using a silicon-based resist as the middle layer
JPH0292603A (ja) 1988-09-30 1990-04-03 Hoya Corp 案内溝付き情報記録用基板の製造方法
JPH02192045A (ja) 1989-01-20 1990-07-27 Fujitsu Ltd 光ディスク基板の製造方法
CA2010169A1 (en) 1989-02-21 1990-08-21 Masakazu Uekita Multi-layer resist
EP0394741B1 (de) 1989-04-24 1997-06-25 Siemens Aktiengesellschaft Verfahren zur Erzeugung ätzresistenter Strukturen
JP3001607B2 (ja) 1989-04-24 2000-01-24 シーメンス、アクチエンゲゼルシヤフト 二層法における寸法安定な構造転写方法
US5110514A (en) 1989-05-01 1992-05-05 Soane Technologies, Inc. Controlled casting of a shrinkable material
JP2586692B2 (ja) 1990-05-24 1997-03-05 松下電器産業株式会社 パターン形成材料およびパターン形成方法
DE4029912A1 (de) 1990-09-21 1992-03-26 Philips Patentverwaltung Verfahren zur bildung mindestens eines grabens in einer substratschicht
US5314772A (en) 1990-10-09 1994-05-24 Arizona Board Of Regents High resolution, multi-layer resist for microlithography and method therefor
JPH0580530A (ja) 1991-09-24 1993-04-02 Hitachi Ltd 薄膜パターン製造方法
US5545367A (en) 1992-04-15 1996-08-13 Soane Technologies, Inc. Rapid prototype three dimensional stereolithography
US5601641A (en) 1992-07-21 1997-02-11 Tse Industries, Inc. Mold release composition with polybutadiene and method of coating a mold core
JPH06244156A (ja) * 1993-02-15 1994-09-02 Nippon Telegr & Teleph Corp <Ntt> パタ―ン形成法
DE69405451T2 (de) 1993-03-16 1998-03-12 Koninkl Philips Electronics Nv Verfahren und Vorrichtung zur Herstellung eines strukturierten Reliefbildes aus vernetztem Photoresist auf einer flachen Substratoberfläche
US5348616A (en) 1993-05-03 1994-09-20 Motorola, Inc. Method for patterning a mold
JP2837063B2 (ja) 1993-06-04 1998-12-14 シャープ株式会社 レジストパターンの形成方法
US5512131A (en) 1993-10-04 1996-04-30 President And Fellows Of Harvard College Formation of microstamped patterns on surfaces and derivative articles
US6776094B1 (en) 1993-10-04 2004-08-17 President & Fellows Of Harvard College Kit For Microcontact Printing
US5776748A (en) 1993-10-04 1998-07-07 President And Fellows Of Harvard College Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor
KR970009858B1 (ko) 1994-01-12 1997-06-18 엘지반도체 주식회사 다층 레지스트 패턴 형성방법
US5434107A (en) 1994-01-28 1995-07-18 Texas Instruments Incorporated Method for planarization
JPH08262717A (ja) 1995-03-27 1996-10-11 Fujitsu Ltd レジスト組成物及びレジストパターンの形成方法
US5849209A (en) 1995-03-31 1998-12-15 Johnson & Johnson Vision Products, Inc. Mold material made with additives
US5743998A (en) 1995-04-19 1998-04-28 Park Scientific Instruments Process for transferring microminiature patterns using spin-on glass resist media
US5820769A (en) 1995-05-24 1998-10-13 Regents Of The University Of Minnesota Method for making magnetic storage having discrete elements with quantized magnetic moments
US5597438A (en) 1995-09-14 1997-01-28 Siemens Aktiengesellschaft Etch chamber having three independently controlled electrodes
US5849222A (en) 1995-09-29 1998-12-15 Johnson & Johnson Vision Products, Inc. Method for reducing lens hole defects in production of contact lens blanks
US5772905A (en) 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US6518189B1 (en) 1995-11-15 2003-02-11 Regents Of The University Of Minnesota Method and apparatus for high density nanostructures
US7758794B2 (en) 2001-10-29 2010-07-20 Princeton University Method of making an article comprising nanoscale patterns with reduced edge roughness
US6482742B1 (en) 2000-07-18 2002-11-19 Stephen Y. Chou Fluid pressure imprint lithography
US20040036201A1 (en) 2000-07-18 2004-02-26 Princeton University Methods and apparatus of field-induced pressure imprint lithography
US20040137734A1 (en) 1995-11-15 2004-07-15 Princeton University Compositions and processes for nanoimprinting
US6309580B1 (en) 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US5684066A (en) 1995-12-04 1997-11-04 H.B. Fuller Licensing & Financing, Inc. Protective coatings having enhanced properties
US5669303A (en) 1996-03-04 1997-09-23 Motorola Apparatus and method for stamping a surface
US6355198B1 (en) 1996-03-15 2002-03-12 President And Fellows Of Harvard College Method of forming articles including waveguides via capillary micromolding and microtransfer molding
US5942443A (en) 1996-06-28 1999-08-24 Caliper Technologies Corporation High throughput screening assay systems in microscale fluidic devices
US5888650A (en) 1996-06-03 1999-03-30 Minnesota Mining And Manufacturing Company Temperature-responsive adhesive article
US6074827A (en) 1996-07-30 2000-06-13 Aclara Biosciences, Inc. Microfluidic method for nucleic acid purification and processing
US5942449A (en) 1996-08-28 1999-08-24 Micron Technology, Inc. Method for removing an upper layer of material from a semiconductor wafer
JP3258240B2 (ja) * 1996-09-10 2002-02-18 株式会社日立製作所 エッチング方法
US5948470A (en) 1997-04-28 1999-09-07 Harrison; Christopher Method of nanoscale patterning and products made thereby
US6071372A (en) 1997-06-05 2000-06-06 Applied Materials, Inc. RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls
US6033977A (en) 1997-06-30 2000-03-07 Siemens Aktiengesellschaft Dual damascene structure
WO1999005724A1 (en) 1997-07-25 1999-02-04 Regents Of The University Of Minnesota Single-electron floating-gate mos memory
JP3780700B2 (ja) 1998-05-26 2006-05-31 セイコーエプソン株式会社 パターン形成方法、パターン形成装置、パターン形成用版、パターン形成用版の製造方法、カラーフィルタの製造方法、導電膜の製造方法及び液晶パネルの製造方法
DE19828969A1 (de) 1998-06-29 1999-12-30 Siemens Ag Verfahren zur Herstellung von Halbleiterbauelementen
US5907782A (en) 1998-08-15 1999-05-25 Acer Semiconductor Manufacturing Inc. Method of forming a multiple fin-pillar capacitor for a high density dram cell
US6096655A (en) 1998-09-02 2000-08-01 International Business Machines, Corporation Method for forming vias and trenches in an insulation layer for a dual-damascene multilevel interconnection structure
US6713238B1 (en) 1998-10-09 2004-03-30 Stephen Y. Chou Microscale patterning and articles formed thereby
WO2000021689A1 (en) 1998-10-09 2000-04-20 The Trustees Of Princeton University Microscale patterning and articles formed thereby
US6218316B1 (en) 1998-10-22 2001-04-17 Micron Technology, Inc. Planarization of non-planar surfaces in device fabrication
US6334960B1 (en) 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
JP4286374B2 (ja) 1999-03-30 2009-06-24 新日鐵化学株式会社 シリコーン樹脂及びこれを含有する感光性樹脂組成物
US6342097B1 (en) 1999-04-23 2002-01-29 Sdc Coatings, Inc. Composition for providing an abrasion resistant coating on a substrate with a matched refractive index and controlled tintability
JP2000323461A (ja) 1999-05-11 2000-11-24 Nec Corp 微細パターン形成装置、その製造方法、および形成方法
US6150190A (en) 1999-05-27 2000-11-21 Motorola Inc. Method of formation of buried mirror semiconductive device
US6517995B1 (en) 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
US6329256B1 (en) 1999-09-24 2001-12-11 Advanced Micro Devices, Inc. Self-aligned damascene gate formation with low gate resistance
TW442961B (en) 1999-10-08 2001-06-23 Taiwan Semiconductor Mfg Manufacturing method of double-recess crown capacitor of DRAM
DE19958966A1 (de) 1999-12-07 2001-06-13 Infineon Technologies Ag Erzeugung von Resiststrukturen
AU779699B2 (en) 1999-12-23 2005-02-10 Universitat Konstanz Methods and apparatus for forming submicron patterns on films
US6245581B1 (en) 2000-04-19 2001-06-12 Advanced Micro Devices, Inc. Method and apparatus for control of critical dimension using feedback etch control
US6566258B1 (en) 2000-05-10 2003-05-20 Applied Materials, Inc. Bi-layer etch stop for inter-level via
US6759325B2 (en) 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
US7635262B2 (en) 2000-07-18 2009-12-22 Princeton University Lithographic apparatus for fluid pressure imprint lithography
US20050037143A1 (en) 2000-07-18 2005-02-17 Chou Stephen Y. Imprint lithography with improved monitoring and control and apparatus therefor
US7211214B2 (en) 2000-07-18 2007-05-01 Princeton University Laser assisted direct imprint lithography
US6326627B1 (en) 2000-08-02 2001-12-04 Archimedes Technology Group, Inc. Mass filtering sputtered ion source
US6777170B1 (en) 2000-08-04 2004-08-17 Massachusetts Institute Of Technology Stereolithographic patterning by variable dose light delivery
US6730256B1 (en) 2000-08-04 2004-05-04 Massachusetts Institute Of Technology Stereolithographic patterning with interlayer surface modifications
US6468853B1 (en) 2000-08-18 2002-10-22 Chartered Semiconductor Manufacturing Ltd. Method of fabricating a shallow trench isolation structure with reduced local oxide recess near corner
US6455411B1 (en) 2000-09-11 2002-09-24 Texas Instruments Incorporated Defect and etch rate control in trench etch for dual damascene patterning of low-k dielectrics
JP3848070B2 (ja) 2000-09-27 2006-11-22 株式会社東芝 パターン形成方法
EP2306242A3 (en) 2000-10-12 2011-11-02 Board of Regents, The University of Texas System Method of forming a pattern on a substrate
US6387787B1 (en) 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US6541360B1 (en) 2001-04-30 2003-04-01 Advanced Micro Devices, Inc. Bi-layer trim etch process to form integrated circuit gate structures
SG187992A1 (en) 2001-07-25 2013-03-28 Univ Princeton Nanochannel arrays and their preparation and use for high throughput macromolecular analysis
CN100347608C (zh) 2001-09-25 2007-11-07 米卢塔技术株式会社 利用毛细作用力在基体上形成微型图案的方法
US20030080472A1 (en) 2001-10-29 2003-05-01 Chou Stephen Y. Lithographic method with bonded release layer for molding small patterns
US6716767B2 (en) 2001-10-31 2004-04-06 Brewer Science, Inc. Contact planarization materials that generate no volatile byproducts or residue during curing
US6489237B1 (en) * 2001-12-04 2002-12-03 Taiwan Semiconductor Manufacturing Company Method of patterning lines in semiconductor devices
US6767202B2 (en) * 2001-12-18 2004-07-27 3M Innovative Properties Company Tooling with helical coils for structured surface articles
DE10200678B4 (de) * 2002-01-10 2006-05-11 Infineon Technologies Ag Verfahren zum Bearbeiten eines Substrats zum Ausbilden einer Struktur
US6737202B2 (en) 2002-02-22 2004-05-18 Motorola, Inc. Method of fabricating a tiered structure using a multi-layered resist stack and use
US7455955B2 (en) 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
JP4276087B2 (ja) 2002-03-15 2009-06-10 プリンストン ユニヴァーシティ レーザを利用したダイレクトインプリントリソグラフィ
US6743713B2 (en) 2002-05-15 2004-06-01 Institute Of Microelectronics Method of forming dual damascene pattern using dual bottom anti-reflective coatings (BARC)
US6495430B1 (en) 2002-05-21 2002-12-17 Macronix International Co., Ltd. Process for fabricating sharp corner-free shallow trench isolation structure
US6849558B2 (en) 2002-05-22 2005-02-01 The Board Of Trustees Of The Leland Stanford Junior University Replication and transfer of microstructures and nanostructures
AU2003238947A1 (en) 2002-05-24 2003-12-12 Stephen Y. Chou Methods and apparatus of field-induced pressure imprint lithography
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6908861B2 (en) 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7070405B2 (en) 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US6820677B2 (en) 2002-08-20 2004-11-23 Ford Motor Company Method of making a spray formed article
US7750059B2 (en) 2002-12-04 2010-07-06 Hewlett-Packard Development Company, L.P. Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure
US6770852B1 (en) 2003-02-27 2004-08-03 Lam Research Corporation Critical dimension variation compensation across a wafer by means of local wafer temperature control
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
JP4651390B2 (ja) 2003-03-27 2011-03-16 コリア・インスティテュート・オブ・マシナリー・アンド・マテリアルズ 多重浮彫要素スタンプを利用したｕｖナノインプリントリソグラフィ法
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US20040224261A1 (en) 2003-05-08 2004-11-11 Resnick Douglas J. Unitary dual damascene process using imprint lithography
CA2526946A1 (en) 2003-05-14 2005-04-07 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
CN100526052C (zh) 2003-06-09 2009-08-12 普林斯顿大学知识产权和技术许可办公室 具有改进的监测和控制的压印光刻术及其设备
TWI228638B (en) 2003-06-10 2005-03-01 Ind Tech Res Inst Method for and apparatus for bonding patterned imprint to a substrate by adhering means
JP4726789B2 (ja) 2003-09-29 2011-07-20 インターナショナル・ビジネス・マシーンズ・コーポレーション 製造方法

Also Published As

Publication number Publication date
CN101356303A (zh) 2009-01-28
WO2005114719A3 (en) 2008-10-09
CN101356303B (zh) 2012-04-04
WO2005114719A2 (en) 2005-12-01
KR20070013305A (ko) 2007-01-30
KR101139302B1 (ko) 2012-05-25
US20050260848A1 (en) 2005-11-24
EP1761949A2 (en) 2007-03-14
EP1761949A4 (en) 2011-04-20
TW200603261A (en) 2006-01-16
TWI289326B (en) 2007-11-01
JP2012054612A (ja) 2012-03-15
US7186656B2 (en) 2007-03-06
JP2008517448A (ja) 2008-05-22
JP5563544B2 (ja) 2014-07-30

Similar Documents

Publication Publication Date Title
JP5059608B2 (ja) リバーストーン処理を利用したリセス構造の形成方法
US7547504B2 (en) Pattern reversal employing thick residual layers
US7140861B2 (en) Compliant hard template for UV imprinting
US7960097B2 (en) Methods of minimizing etch undercut and providing clean metal liftoff
US7041604B2 (en) Method of patterning surfaces while providing greater control of recess anisotropy
US8012394B2 (en) Template pattern density doubling
US7357876B2 (en) Eliminating printability of sub-resolution defects in imprint lithography
US7241395B2 (en) Reverse tone patterning on surfaces having planarity perturbations
US7323417B2 (en) Method of forming a recessed structure employing a reverse tone process
JP5848386B2 (ja) インサイチュ嵌込み構造物形成方法
US7205244B2 (en) Patterning substrates employing multi-film layers defining etch-differential interfaces
CN100418011C (zh) 微结构的制造方法
US7252777B2 (en) Method of forming an in-situ recessed structure
US7906272B2 (en) Method of forming a pattern of a semiconductor device

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080513

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080513

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110225

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110308

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110531

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110802

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111202

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20111212

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120514

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120717

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120802

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150810

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5059608

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term