JP5030405B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP5030405B2
JP5030405B2 JP2005244026A JP2005244026A JP5030405B2 JP 5030405 B2 JP5030405 B2 JP 5030405B2 JP 2005244026 A JP2005244026 A JP 2005244026A JP 2005244026 A JP2005244026 A JP 2005244026A JP 5030405 B2 JP5030405 B2 JP 5030405B2
Authority
JP
Japan
Prior art keywords
film
substrate
laser
insulating film
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005244026A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006100804A5 (enExample
JP2006100804A (ja
Inventor
幸一郎 田中
良明 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005244026A priority Critical patent/JP5030405B2/ja
Publication of JP2006100804A publication Critical patent/JP2006100804A/ja
Publication of JP2006100804A5 publication Critical patent/JP2006100804A5/ja
Application granted granted Critical
Publication of JP5030405B2 publication Critical patent/JP5030405B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005244026A 2004-09-01 2005-08-25 半導体装置の作製方法 Expired - Fee Related JP5030405B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005244026A JP5030405B2 (ja) 2004-09-01 2005-08-25 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004253925 2004-09-01
JP2004253925 2004-09-01
JP2005244026A JP5030405B2 (ja) 2004-09-01 2005-08-25 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006100804A JP2006100804A (ja) 2006-04-13
JP2006100804A5 JP2006100804A5 (enExample) 2008-08-07
JP5030405B2 true JP5030405B2 (ja) 2012-09-19

Family

ID=36240266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005244026A Expired - Fee Related JP5030405B2 (ja) 2004-09-01 2005-08-25 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5030405B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5007192B2 (ja) * 2006-10-06 2012-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7897482B2 (en) * 2007-05-31 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5404064B2 (ja) * 2008-01-16 2014-01-29 株式会社半導体エネルギー研究所 レーザ処理装置、および半導体基板の作製方法
US20120044445A1 (en) * 2010-08-17 2012-02-23 Semiconductor Energy Laboratory Co., Ltd. Liquid Crystal Device and Manufacturing Method Thereof
JP6276496B2 (ja) * 2012-04-27 2018-02-07 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタの製造方法、表示装置および有機ｅｌディスプレイの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10200118A (ja) * 1997-01-08 1998-07-31 Seiko Epson Corp 薄膜トランジスタの製造方法
JP2002299237A (ja) * 2001-04-04 2002-10-11 Hitachi Ltd 多結晶半導体膜の製造方法
JP4439789B2 (ja) * 2001-04-20 2010-03-24 株式会社半導体エネルギー研究所 レーザ照射装置、並びに半導体装置の作製方法
JP4813743B2 (ja) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ 画像表示装置の製造方法
JP4610178B2 (ja) * 2002-11-15 2011-01-12 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2006100804A (ja) 2006-04-13

Similar Documents

Publication Publication Date Title
US7521368B2 (en) Method for manufacturing semiconductor device
JP2023030048A (ja) 表示装置
JP3980465B2 (ja) 半導体装置の作製方法
JP4127565B2 (ja) 半導体装置の作製方法
JP4373115B2 (ja) 半導体装置の作製方法
JP5354940B2 (ja) 半導体装置の作製方法
JP2012151483A (ja) 半導体装置の作製方法、及び半導体装置
JP5364282B2 (ja) 半導体装置の作製方法
CN100481316C (zh) 激光处理装置、激光照射方法及半导体装置的制作方法
US7358165B2 (en) Semiconductor device and method for manufacturing semiconductor device
US8058652B2 (en) Semiconductor device used as electro-optical device having channel formation region containing first element, and source or drain region containing second element
US7459406B2 (en) Laser processing unit, laser processing method, and method for manufacturing semiconductor device
JP5025095B2 (ja) 半導体装置の作製方法
JP2003017411A (ja) レーザ照射装置、並びに半導体装置の作製方法
CN100474502C (zh) 半导体器件的制造方法
JP5201790B2 (ja) 半導体装置の作製方法
JP4628032B2 (ja) 半導体装置及びその作製方法
JP4963163B2 (ja) レーザ処理装置及び半導体装置の作製方法
JP4583797B2 (ja) 半導体装置の作製方法
JP2006100804A (ja) レーザ処理装置、レーザ処理方法及び半導体装置の作製方法
JP4748873B2 (ja) 半導体装置の作製方法
JP4364674B2 (ja) 半導体装置の作製方法
JP5291866B2 (ja) 半導体装置の作製方法
JP2006156972A (ja) 半導体装置及びその作製方法
JP2003218056A (ja) レーザ照射方法および半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080623

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080623

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110926

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111004

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111102

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120228

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120307

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120619

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120626

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150706

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150706

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees