JP2006100804A5 - - Google Patents

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Publication number
JP2006100804A5
JP2006100804A5 JP2005244026A JP2005244026A JP2006100804A5 JP 2006100804 A5 JP2006100804 A5 JP 2006100804A5 JP 2005244026 A JP2005244026 A JP 2005244026A JP 2005244026 A JP2005244026 A JP 2005244026A JP 2006100804 A5 JP2006100804 A5 JP 2006100804A5
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JP
Japan
Prior art keywords
laser
laser light
gas
manufacturing
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005244026A
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English (en)
Japanese (ja)
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JP5030405B2 (ja
JP2006100804A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005244026A priority Critical patent/JP5030405B2/ja
Priority claimed from JP2005244026A external-priority patent/JP5030405B2/ja
Publication of JP2006100804A publication Critical patent/JP2006100804A/ja
Publication of JP2006100804A5 publication Critical patent/JP2006100804A5/ja
Application granted granted Critical
Publication of JP5030405B2 publication Critical patent/JP5030405B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005244026A 2004-09-01 2005-08-25 半導体装置の作製方法 Expired - Fee Related JP5030405B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005244026A JP5030405B2 (ja) 2004-09-01 2005-08-25 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004253925 2004-09-01
JP2004253925 2004-09-01
JP2005244026A JP5030405B2 (ja) 2004-09-01 2005-08-25 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006100804A JP2006100804A (ja) 2006-04-13
JP2006100804A5 true JP2006100804A5 (enExample) 2008-08-07
JP5030405B2 JP5030405B2 (ja) 2012-09-19

Family

ID=36240266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005244026A Expired - Fee Related JP5030405B2 (ja) 2004-09-01 2005-08-25 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5030405B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5007192B2 (ja) * 2006-10-06 2012-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7897482B2 (en) * 2007-05-31 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5404064B2 (ja) * 2008-01-16 2014-01-29 株式会社半導体エネルギー研究所 レーザ処理装置、および半導体基板の作製方法
US20120044445A1 (en) * 2010-08-17 2012-02-23 Semiconductor Energy Laboratory Co., Ltd. Liquid Crystal Device and Manufacturing Method Thereof
JP6276496B2 (ja) * 2012-04-27 2018-02-07 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタの製造方法、表示装置および有機ｅｌディスプレイの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10200118A (ja) * 1997-01-08 1998-07-31 Seiko Epson Corp 薄膜トランジスタの製造方法
JP2002299237A (ja) * 2001-04-04 2002-10-11 Hitachi Ltd 多結晶半導体膜の製造方法
JP4439789B2 (ja) * 2001-04-20 2010-03-24 株式会社半導体エネルギー研究所 レーザ照射装置、並びに半導体装置の作製方法
JP4813743B2 (ja) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ 画像表示装置の製造方法
JP4610178B2 (ja) * 2002-11-15 2011-01-12 株式会社半導体エネルギー研究所 半導体装置の作製方法

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