JP2010541022A5 - - Google Patents
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- Publication number
- JP2010541022A5 JP2010541022A5 JP2010528154A JP2010528154A JP2010541022A5 JP 2010541022 A5 JP2010541022 A5 JP 2010541022A5 JP 2010528154 A JP2010528154 A JP 2010528154A JP 2010528154 A JP2010528154 A JP 2010528154A JP 2010541022 A5 JP2010541022 A5 JP 2010541022A5
- Authority
- JP
- Japan
- Prior art keywords
- optical element
- plasma
- coherent light
- light beam
- enclosure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001427 coherent effect Effects 0.000 claims 18
- 230000003287 optical effect Effects 0.000 claims 18
- 238000000034 method Methods 0.000 claims 5
- 239000007789 gas Substances 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 238000009616 inductively coupled plasma Methods 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 238000005224 laser annealing Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/868,933 US7795816B2 (en) | 2007-10-08 | 2007-10-08 | High speed phase scrambling of a coherent beam using plasma |
| PCT/US2008/078704 WO2009048804A1 (en) | 2007-10-08 | 2008-10-03 | High speed phase scrambling of a coherent beam using plasma |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010541022A JP2010541022A (ja) | 2010-12-24 |
| JP2010541022A5 true JP2010541022A5 (enExample) | 2011-11-24 |
Family
ID=40523008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010528154A Pending JP2010541022A (ja) | 2007-10-08 | 2008-10-03 | プラズマを使用したコヒーレントなビームの高速位相スクランブル化 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7795816B2 (enExample) |
| JP (1) | JP2010541022A (enExample) |
| KR (1) | KR101577196B1 (enExample) |
| WO (1) | WO2009048804A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8329557B2 (en) * | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
| EP2534672B1 (en) | 2010-02-09 | 2016-06-01 | Energetiq Technology Inc. | Laser-driven light source |
| TWI543264B (zh) * | 2010-03-31 | 2016-07-21 | 應用材料股份有限公司 | 雷射光束定位系統 |
| TWI575630B (zh) * | 2011-06-10 | 2017-03-21 | 應用材料股份有限公司 | 脈衝循環器 |
| KR101432158B1 (ko) | 2012-05-24 | 2014-08-20 | 에이피시스템 주식회사 | 기판 처리 장치 및 그 동작 방법 |
| JP6121748B2 (ja) * | 2013-02-22 | 2017-04-26 | 株式会社東芝 | イオン加速装置及び医療用装置 |
| US9826621B1 (en) * | 2016-11-10 | 2017-11-21 | Northrop Grumman Systems Corporation | Electromagnetic wave refraction via controlled plasma |
| US11587781B2 (en) | 2021-05-24 | 2023-02-21 | Hamamatsu Photonics K.K. | Laser-driven light source with electrodeless ignition |
| US12165856B2 (en) | 2022-02-21 | 2024-12-10 | Hamamatsu Photonics K.K. | Inductively coupled plasma light source |
| US12144072B2 (en) | 2022-03-29 | 2024-11-12 | Hamamatsu Photonics K.K. | All-optical laser-driven light source with electrodeless ignition |
| US12156322B2 (en) | 2022-12-08 | 2024-11-26 | Hamamatsu Photonics K.K. | Inductively coupled plasma light source with switched power supply |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4007430A (en) | 1969-10-14 | 1977-02-08 | Nasa | Continuous plasma laser |
| US4116542A (en) | 1976-05-19 | 1978-09-26 | Kms Fusion, Inc. | Method and apparatus for reducing coherence of high-power laser beams |
| US5048163A (en) | 1987-12-07 | 1991-09-17 | Asmus John F | System for processing semiconductor materials |
| JPH04158331A (ja) * | 1990-10-23 | 1992-06-01 | Toshiba Corp | 光シャッター及びこの光シャッターを用いたレーザ装置 |
| JP2863135B2 (ja) * | 1996-07-23 | 1999-03-03 | 日本原子力研究所 | 高効率プラズマ閉じ込め方法とレーザー発振方法並びにレーザー発振器 |
| JPH11195397A (ja) * | 1998-01-05 | 1999-07-21 | Masanobu Nunogaki | 低エネルギー重イオン立体照射法 |
| JP2000182956A (ja) * | 1998-12-15 | 2000-06-30 | Sony Corp | 半導体薄膜の結晶化方法及びレーザ結晶化装置 |
| JP2000277453A (ja) * | 1999-03-26 | 2000-10-06 | Seiko Epson Corp | 半導体製造装置 |
| JP2002082239A (ja) * | 2000-09-11 | 2002-03-22 | Nec Corp | フォトニック結晶およびこれを用いた光パルス制御装置 |
| US7087914B2 (en) * | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
| US7396431B2 (en) * | 2004-09-30 | 2008-07-08 | Tokyo Electron Limited | Plasma processing system for treating a substrate |
| JP4391537B2 (ja) * | 2007-02-28 | 2009-12-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2007
- 2007-10-08 US US11/868,933 patent/US7795816B2/en not_active Expired - Fee Related
-
2008
- 2008-10-03 JP JP2010528154A patent/JP2010541022A/ja active Pending
- 2008-10-03 KR KR1020107010152A patent/KR101577196B1/ko not_active Expired - Fee Related
- 2008-10-03 WO PCT/US2008/078704 patent/WO2009048804A1/en not_active Ceased
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