KR101577196B1 - 플라즈마를 이용한 간섭성 빔의 고속 위상 스크램블링 - Google Patents

플라즈마를 이용한 간섭성 빔의 고속 위상 스크램블링 Download PDF

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Publication number
KR101577196B1
KR101577196B1 KR1020107010152A KR20107010152A KR101577196B1 KR 101577196 B1 KR101577196 B1 KR 101577196B1 KR 1020107010152 A KR1020107010152 A KR 1020107010152A KR 20107010152 A KR20107010152 A KR 20107010152A KR 101577196 B1 KR101577196 B1 KR 101577196B1
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South Korea
Prior art keywords
coherent light
light beam
plasma
conditioner
pulse
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Korean (ko)
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KR20100080608A (ko
Inventor
딘 제닝스
브루스 이. 아담스
티모시 엔. 토마스
스티븐 모팻트
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
KR1020107010152A 2007-10-08 2008-10-03 플라즈마를 이용한 간섭성 빔의 고속 위상 스크램블링 Expired - Fee Related KR101577196B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/868,933 2007-10-08
US11/868,933 US7795816B2 (en) 2007-10-08 2007-10-08 High speed phase scrambling of a coherent beam using plasma

Publications (2)

Publication Number Publication Date
KR20100080608A KR20100080608A (ko) 2010-07-09
KR101577196B1 true KR101577196B1 (ko) 2015-12-15

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KR1020107010152A Expired - Fee Related KR101577196B1 (ko) 2007-10-08 2008-10-03 플라즈마를 이용한 간섭성 빔의 고속 위상 스크램블링

Country Status (4)

Country Link
US (1) US7795816B2 (enExample)
JP (1) JP2010541022A (enExample)
KR (1) KR101577196B1 (enExample)
WO (1) WO2009048804A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8329557B2 (en) * 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
EP2534672B1 (en) 2010-02-09 2016-06-01 Energetiq Technology Inc. Laser-driven light source
TWI543264B (zh) * 2010-03-31 2016-07-21 應用材料股份有限公司 雷射光束定位系統
TWI575630B (zh) * 2011-06-10 2017-03-21 應用材料股份有限公司 脈衝循環器
KR101432158B1 (ko) 2012-05-24 2014-08-20 에이피시스템 주식회사 기판 처리 장치 및 그 동작 방법
JP6121748B2 (ja) * 2013-02-22 2017-04-26 株式会社東芝 イオン加速装置及び医療用装置
US9826621B1 (en) * 2016-11-10 2017-11-21 Northrop Grumman Systems Corporation Electromagnetic wave refraction via controlled plasma
US11587781B2 (en) 2021-05-24 2023-02-21 Hamamatsu Photonics K.K. Laser-driven light source with electrodeless ignition
US12165856B2 (en) 2022-02-21 2024-12-10 Hamamatsu Photonics K.K. Inductively coupled plasma light source
US12144072B2 (en) 2022-03-29 2024-11-12 Hamamatsu Photonics K.K. All-optical laser-driven light source with electrodeless ignition
US12156322B2 (en) 2022-12-08 2024-11-26 Hamamatsu Photonics K.K. Inductively coupled plasma light source with switched power supply

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007430A (en) 1969-10-14 1977-02-08 Nasa Continuous plasma laser

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US4116542A (en) 1976-05-19 1978-09-26 Kms Fusion, Inc. Method and apparatus for reducing coherence of high-power laser beams
US5048163A (en) 1987-12-07 1991-09-17 Asmus John F System for processing semiconductor materials
JPH04158331A (ja) * 1990-10-23 1992-06-01 Toshiba Corp 光シャッター及びこの光シャッターを用いたレーザ装置
JP2863135B2 (ja) * 1996-07-23 1999-03-03 日本原子力研究所 高効率プラズマ閉じ込め方法とレーザー発振方法並びにレーザー発振器
JPH11195397A (ja) * 1998-01-05 1999-07-21 Masanobu Nunogaki 低エネルギー重イオン立体照射法
JP2000182956A (ja) * 1998-12-15 2000-06-30 Sony Corp 半導体薄膜の結晶化方法及びレーザ結晶化装置
JP2000277453A (ja) * 1999-03-26 2000-10-06 Seiko Epson Corp 半導体製造装置
JP2002082239A (ja) * 2000-09-11 2002-03-22 Nec Corp フォトニック結晶およびこれを用いた光パルス制御装置
US7087914B2 (en) * 2004-03-17 2006-08-08 Cymer, Inc High repetition rate laser produced plasma EUV light source
US7396431B2 (en) * 2004-09-30 2008-07-08 Tokyo Electron Limited Plasma processing system for treating a substrate
JP4391537B2 (ja) * 2007-02-28 2009-12-24 株式会社半導体エネルギー研究所 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007430A (en) 1969-10-14 1977-02-08 Nasa Continuous plasma laser

Also Published As

Publication number Publication date
WO2009048804A1 (en) 2009-04-16
KR20100080608A (ko) 2010-07-09
JP2010541022A (ja) 2010-12-24
US20090091817A1 (en) 2009-04-09
US7795816B2 (en) 2010-09-14

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