JP2010541022A - プラズマを使用したコヒーレントなビームの高速位相スクランブル化 - Google Patents

プラズマを使用したコヒーレントなビームの高速位相スクランブル化 Download PDF

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Publication number
JP2010541022A
JP2010541022A JP2010528154A JP2010528154A JP2010541022A JP 2010541022 A JP2010541022 A JP 2010541022A JP 2010528154 A JP2010528154 A JP 2010528154A JP 2010528154 A JP2010528154 A JP 2010528154A JP 2010541022 A JP2010541022 A JP 2010541022A
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Prior art keywords
plasma
coherent light
light beam
enclosure
magnetic field
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JP2010528154A
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Japanese (ja)
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JP2010541022A5 (enExample
Inventor
ディーン ジェニングス，
ブルース イー． アダムス，
ティモシー エヌ． トーマス，
スティーヴン モファット，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2010541022A publication Critical patent/JP2010541022A/ja
Publication of JP2010541022A5 publication Critical patent/JP2010541022A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP2010528154A 2007-10-08 2008-10-03 プラズマを使用したコヒーレントなビームの高速位相スクランブル化 Pending JP2010541022A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/868,933 US7795816B2 (en) 2007-10-08 2007-10-08 High speed phase scrambling of a coherent beam using plasma
PCT/US2008/078704 WO2009048804A1 (en) 2007-10-08 2008-10-03 High speed phase scrambling of a coherent beam using plasma

Publications (2)

Publication Number Publication Date
JP2010541022A true JP2010541022A (ja) 2010-12-24
JP2010541022A5 JP2010541022A5 (enExample) 2011-11-24

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JP2010528154A Pending JP2010541022A (ja) 2007-10-08 2008-10-03 プラズマを使用したコヒーレントなビームの高速位相スクランブル化

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Country Link
US (1) US7795816B2 (enExample)
JP (1) JP2010541022A (enExample)
KR (1) KR101577196B1 (enExample)
WO (1) WO2009048804A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8329557B2 (en) * 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
EP2534672B1 (en) 2010-02-09 2016-06-01 Energetiq Technology Inc. Laser-driven light source
TWI543264B (zh) * 2010-03-31 2016-07-21 應用材料股份有限公司 雷射光束定位系統
TWI575630B (zh) * 2011-06-10 2017-03-21 應用材料股份有限公司 脈衝循環器
KR101432158B1 (ko) 2012-05-24 2014-08-20 에이피시스템 주식회사 기판 처리 장치 및 그 동작 방법
JP6121748B2 (ja) * 2013-02-22 2017-04-26 株式会社東芝 イオン加速装置及び医療用装置
US9826621B1 (en) * 2016-11-10 2017-11-21 Northrop Grumman Systems Corporation Electromagnetic wave refraction via controlled plasma
US11587781B2 (en) 2021-05-24 2023-02-21 Hamamatsu Photonics K.K. Laser-driven light source with electrodeless ignition
US12165856B2 (en) 2022-02-21 2024-12-10 Hamamatsu Photonics K.K. Inductively coupled plasma light source
US12144072B2 (en) 2022-03-29 2024-11-12 Hamamatsu Photonics K.K. All-optical laser-driven light source with electrodeless ignition
US12156322B2 (en) 2022-12-08 2024-11-26 Hamamatsu Photonics K.K. Inductively coupled plasma light source with switched power supply

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04158331A (ja) * 1990-10-23 1992-06-01 Toshiba Corp 光シャッター及びこの光シャッターを用いたレーザ装置
JPH1041094A (ja) * 1996-07-23 1998-02-13 Japan Atom Energy Res Inst 高効率プラズマ閉じ込め方法とレーザー発振方法並び にレーザー発振器
JPH11195397A (ja) * 1998-01-05 1999-07-21 Masanobu Nunogaki 低エネルギー重イオン立体照射法
JP2000182956A (ja) * 1998-12-15 2000-06-30 Sony Corp 半導体薄膜の結晶化方法及びレーザ結晶化装置
JP2000277453A (ja) * 1999-03-26 2000-10-06 Seiko Epson Corp 半導体製造装置
JP2002082239A (ja) * 2000-09-11 2002-03-22 Nec Corp フォトニック結晶およびこれを用いた光パルス制御装置
WO2005089130A2 (en) * 2004-03-17 2005-09-29 Cymer, Inc. A high repetition rate laser produced plasma euv light source
JP2007194653A (ja) * 2007-02-28 2007-08-02 Semiconductor Energy Lab Co Ltd 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007430A (en) 1969-10-14 1977-02-08 Nasa Continuous plasma laser
US4116542A (en) 1976-05-19 1978-09-26 Kms Fusion, Inc. Method and apparatus for reducing coherence of high-power laser beams
US5048163A (en) 1987-12-07 1991-09-17 Asmus John F System for processing semiconductor materials
US7396431B2 (en) * 2004-09-30 2008-07-08 Tokyo Electron Limited Plasma processing system for treating a substrate

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04158331A (ja) * 1990-10-23 1992-06-01 Toshiba Corp 光シャッター及びこの光シャッターを用いたレーザ装置
JPH1041094A (ja) * 1996-07-23 1998-02-13 Japan Atom Energy Res Inst 高効率プラズマ閉じ込め方法とレーザー発振方法並び にレーザー発振器
JPH11195397A (ja) * 1998-01-05 1999-07-21 Masanobu Nunogaki 低エネルギー重イオン立体照射法
JP2000182956A (ja) * 1998-12-15 2000-06-30 Sony Corp 半導体薄膜の結晶化方法及びレーザ結晶化装置
JP2000277453A (ja) * 1999-03-26 2000-10-06 Seiko Epson Corp 半導体製造装置
JP2002082239A (ja) * 2000-09-11 2002-03-22 Nec Corp フォトニック結晶およびこれを用いた光パルス制御装置
WO2005089130A2 (en) * 2004-03-17 2005-09-29 Cymer, Inc. A high repetition rate laser produced plasma euv light source
JP2007194653A (ja) * 2007-02-28 2007-08-02 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
WO2009048804A1 (en) 2009-04-16
KR20100080608A (ko) 2010-07-09
US20090091817A1 (en) 2009-04-09
US7795816B2 (en) 2010-09-14
KR101577196B1 (ko) 2015-12-15

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