JP4984720B2 - スイッチング素子、スイッチング素子の駆動方法、論理集積回路およびメモリ素子 - Google Patents
スイッチング素子、スイッチング素子の駆動方法、論理集積回路およびメモリ素子 Download PDFInfo
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- JP4984720B2 JP4984720B2 JP2006204971A JP2006204971A JP4984720B2 JP 4984720 B2 JP4984720 B2 JP 4984720B2 JP 2006204971 A JP2006204971 A JP 2006204971A JP 2006204971 A JP2006204971 A JP 2006204971A JP 4984720 B2 JP4984720 B2 JP 4984720B2
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- 238000000034 method Methods 0.000 title claims description 39
- 239000010416 ion conductor Substances 0.000 claims description 113
- 229910021645 metal ion Inorganic materials 0.000 claims description 52
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 35
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052946 acanthite Inorganic materials 0.000 claims description 4
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 claims description 4
- 229940056910 silver sulfide Drugs 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 150000004770 chalcogenides Chemical class 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 37
- 239000010949 copper Substances 0.000 description 37
- 229910052802 copper Inorganic materials 0.000 description 35
- 230000007704 transition Effects 0.000 description 28
- 238000003487 electrochemical reaction Methods 0.000 description 27
- 210000004027 cell Anatomy 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 11
- 239000004020 conductor Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 229910001431 copper ion Inorganic materials 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- -1 silver ions Chemical class 0.000 description 4
- 239000007784 solid electrolyte Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 210000001787 dendrite Anatomy 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- KDSXXMBJKHQCAA-UHFFFAOYSA-N disilver;selenium(2-) Chemical compound [Se-2].[Ag+].[Ag+] KDSXXMBJKHQCAA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010291 electrical method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000008672 reprogramming Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/028—Formation of switching materials, e.g. deposition of layers by conversion of electrode material, e.g. oxidation
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- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
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Description
1、11、21、31、41、51 ソース電極
2、12、22、32、42、52 ドレイン電極
3、13、23、33、43、53、63 ゲート電極
4、14、14、34、44、54 イオン伝導体
5、15、25、35、45、55 基板
61 配線A
62 配線B
26、36、46、64 絶縁層
70 メモリアレイ
71 MOSトランジスタ
73a〜73z ビット線
74a〜74y、75a〜75y ワード線
76 メモリセル
81 絶縁材料
82 導電材料
83 誘電材料
84 金属材料
85 電極
86 イオン導電材料
87 半導体基板
Claims (18)
- 金属イオンが伝導可能なイオン伝導体と、第1の電極、第2の電極および第3の電極と、を備え、
前記第1の電極は前記金属イオンを前記イオン伝導体中に供給しない材料からなる領域を含む構成であり、
前記第2の電極、前記第3の電極のうち少なくとも第3の電極は該イオン伝導体に接し、かつ前記イオン伝導体に接する電極のうち少なくとも第3の電極は前記金属イオンを該イオン伝導体中に供給可能な材料を含む構成であり、
前記第3の電極に電圧を印加して前記第1の電極と前記第2の電極の間に金属を析出または溶解させることによって、前記第1の電極および第2の電極間の導通状態を制御することを特徴とするスイッチング素子。 - 金属イオンが伝導可能なイオン伝導体と、第1の電極、第2の電極および第3の電極と、を備え、
前記第1の電極、前記第2の電極および前記第3の電極は前記イオン伝導体に接して設けられ、
前記第1の電極は前記金属イオンを前記イオン伝導体中に供給しない材料からなる領域を含む構成であり、
前記第2の電極、前記第3の電極のうち少なくとも第3の電極は前記金属イオンを前記イオン伝導体中に供給可能な材料を含む構成であり、
前記第3の電極に電圧を印加して前記第1の電極と前記第2の電極の間に金属を析出または溶解させることによって、前記第1の電極および第2の電極間の導通状態を制御することを特徴とするスイッチング素子。 - 前記第1の電極は、少なくとも前記イオン伝導体に接する部分が前記金属イオンを前記イオン伝導体中に供給しない組成によってなることを特徴とする請求項2記載のスイッチング素子。
- 前記第2の電極、前記第3の電極のうち少なくとも第3の電極は、少なくとも前記イオン伝導体に接する部分が前記金属イオンを前記イオン伝導体中に供給可能な組成によってなることを特徴とする請求項1から3のいずれか一項に記載のスイッチング素子。
- 前記第1の電極、前記第2の電極、前記第3の電極のうち1つもしくは2つの電極が基体上に設けられていることを特徴とする請求項1から4のいずれか一項に記載のスイッチング素子。
- 基体上に設けられた電極の上方に、前記イオン伝導体もしくは絶縁層の少なくともいずれかを介して他の電極が設けられていることを特徴とする請求項5記載のスイッチング素子。
- 前記イオン伝導体に接する電極のうち少なくとも一つが、イオン伝導体との接触面において先鋭部を有することを特徴とする請求項1から6のいずれか1項に記載のスイッチング素子。
- 前記イオン伝導体が、元素の周期律表における6B族を含むカルコゲナイド材料、金属イオン性ガラス、または金属イオン性非晶質半導体より選ばれる少なくとも一つであることを特徴とする、請求項1から7のいずれか1項に記載のスイッチング素子。
- 前記イオン伝導体が硫化銅又は硫化銀を含むことを特徴とする請求項1から7のいずれか1項に記載のスイッチング素子。
- 前記イオン伝導体中に金属イオンを供給しない材料が、白金、アルミニウム、金、チタン、タングステン、バナジウム、ニオブ、タンタル、クロム、もしくはモリブデン、これらの金属の窒化物、またはこれらの金属のシリサイド、或いはこれらの組み合わせを含むことを特徴とする請求項1から9のいずれか1項に記載のスイッチング素子。
- 金属イオンが伝導可能なイオン伝導体と、第1の電極、第2の電極および第3の電極と、を備え、
前記第1の電極は前記金属イオンを前記イオン伝導体中に供給しない材料からなる領域を含む構成であり、
前記第3の電極が前記イオン伝導体に接し、かつ前記金属イオンを該イオン伝導体中に供給可能な材料を含む構成であり、
前記第3の電極に電圧を印加することによって前記第1の電極および第2の電極間の導通状態を制御するスイッチング素子の駆動方法であって、
前記第3の電極に正の電圧を印加して前記第1の電極と前記第2の電極の間に金属を析出させることによって、前記第1の電極と前記第2の電極の間が電気的に接続された状態であるオン状態を形成し、
前記第3の電極に負の電圧が印加されて前記第1の電極と前記第2の電極の間の金属が溶解することにより、前記第1の電極と前記第2の電極の間が絶縁された状態であるオフ状態が形成されることを特徴とするスイッチング素子の駆動方法。 - 金属イオンが伝導可能なイオン伝導体と、第1の電極、第2の電極および第3の電極と、を備え、
前記第1の電極は前記金属イオンを前記イオン伝導体中に供給しない材料からなる領域を含む構成であり、
前記第2の電極および前記第3の電極のそれぞれが前記イオン伝導体に接し、かつ前記金属イオンを該イオン伝導体中に供給可能な材料を含む構成であり、
前記第3の電極に電圧を印加することによって前記第1の電極および第2の電極間の導通状態を制御するスイッチング素子の駆動方法であって、
前記第2の電極に電圧を印加することによって前記第1の電極と前記第2の電極の間が電気的に接続された状態であるオン状態を形成した後、前記第3の電極に、前記第1の電極に対して正となる電圧を印加することで前記第1の電極および第2の電極間の電流量を増加させ、また、前記第3の電極に、前記第1の電極に対して負となる電圧を印加することで前記第1の電極および第2の電極間の電流量を減少させ、
前記第2の電極にオン状態を形成する場合とは逆の極性よりなる電圧が印加されることにより、前記第1の電極と前記第2の電極の間が絶縁された状態であるオフ状態が形成されることを特徴とするスイッチング素子の駆動方法。 - 前記第3の電極に印加する電圧および/または電圧印加時間によって、前記電気特性を制御することを特徴とする、請求項11または12のいずれかに記載のスイッチング素子の駆動方法。
- 前記第3の電極への電圧を停止することにより前記オン状態あるいは前記オフ状態を保持することを特徴とする請求項11から13のいずれか一項に記載のスイッチング素子の駆動方法。
- 前記第1および第2の電極間の伝導度を測定し当該伝導度の変化量によって第3の電極に印加する電圧を制御することを特徴とする請求項11から13のいずれか一項に記載のスイッチング素子の駆動方法。
- 請求項1から10のいずれか一項に記載のスイッチング素子をプログラム用スイッチに用いた論理集積回路。
- 請求項1から10のいずれか一項に記載のスイッチング素子と、トランジスタの各々1つずつを備えたメモリセルを基本単位とするメモリ素子。
- 金属イオンが伝導可能なイオン伝導体と、第1の電極、第2の電極および第3の電極と、を備え、前記第1の電極は前記金属イオンを前記イオン伝導体中に供給しない材料からなる領域を含む構成であり、前記第2の電極、前記第3の電極のうち少なくとも第3の電極は該イオン伝導体に接し、かつ前記イオン伝導体に接する電極のうち少なくとも第3の電極は前記金属イオンを該イオン伝導体中に供給可能な材料を含む構成であり、前記第3の電極に電圧を印加することによって前記第1の電極および第2の電極間の導通状態を制御するスイッチング素子と、トランジスタの各々1つずつを備えたメモリセルを基本単位とするメモリ素子。
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