JP2006339667A - スイッチング素子、書き換え可能な論理集積回路およびメモリ素子 - Google Patents
スイッチング素子、書き換え可能な論理集積回路およびメモリ素子 Download PDFInfo
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- 239000010416 ion conductor Substances 0.000 claims abstract description 100
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 238000003487 electrochemical reaction Methods 0.000 claims abstract description 41
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 40
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 39
- 239000010949 copper Substances 0.000 claims description 39
- 229910052802 copper Inorganic materials 0.000 claims description 37
- 230000007704 transition Effects 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 26
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052946 acanthite Inorganic materials 0.000 claims description 4
- 239000008151 electrolyte solution Substances 0.000 claims description 4
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 claims description 4
- 229940056910 silver sulfide Drugs 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 7
- 230000010354 integration Effects 0.000 abstract description 6
- 230000000717 retained effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 25
- 210000004027 cell Anatomy 0.000 description 14
- 239000000758 substrate Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000003247 decreasing effect Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 229910001431 copper ion Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- -1 silver ions Chemical class 0.000 description 4
- 239000007784 solid electrolyte Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 210000001787 dendrite Anatomy 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- KDSXXMBJKHQCAA-UHFFFAOYSA-N disilver;selenium(2-) Chemical compound [Se-2].[Ag+].[Ag+] KDSXXMBJKHQCAA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010291 electrical method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000008672 reprogramming Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- G11C13/0009—RRAM elements whose operation depends upon chemical change
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Abstract
【解決手段】電気化学反応に用いられる金属イオンが伝導するためのイオン伝導体14と、イオン伝導体14に接して、所定の距離だけ離れて設けられたソース電極11およびドレイン電極12と、オン状態に遷移させる電圧が印加されるとソース電極11およびドレイン電極12の間に金属イオンによる金属を析出させてソース電極11およびドレイン電極12を電気的に接続し、オフ状態に遷移させる電圧が印加されると析出した金属を溶解させてソース電極11およびドレイン電極12の電気的接続を切るための、イオン伝導体14に接して設けられたゲート電極13とを有する。
【選択図】図5
Description
1、11、21、31、41、51 ソース電極
2、12、22、32、42、52 ドレイン電極
3、13、23、33、43、53、63 ゲート電極
4、14、14、34、44、54 イオン伝導体
5、15、25、35、45、55 基板
61 配線A
62 配線B
26、36、46、64 絶縁層
70 メモリアレイ
71 MOSトランジスタ
73a〜73z ビット線
74a〜74y、75a〜75y ワード線
76 メモリセル
81 絶縁材料
82 導電材料
83 誘電材料
84 金属材料
85 電極
86 イオン導電材料
87 半導体基板
Claims (13)
- 電気化学反応を利用したスイッチング素子であって、
前記電気化学反応に用いられる金属イオンが伝導するためのイオン伝導体と、
前記イオン伝導体に接して、所定の距離だけ離れて設けられたソース電極およびドレイン電極と、
前記スイッチング素子をオン状態に遷移させる電圧が印加されると前記ソース電極およびドレイン電極の間に前記金属イオンによる金属を析出させて前記ソース電極およびドレイン電極を電気的に接続し、前記スイッチング素子をオフ状態に遷移させる電圧が印加されると前記析出した金属を溶解させて該ソース電極およびドレイン電極の電気的接続を切るための、前記イオン伝導体に接して設けられたゲート電極と、
を有するスイッチング素子。 - 前記スイッチング素子がオン状態またはオフ状態になった後、前記ゲート電極への電圧の印加が停止されても、該状態を保持する請求項1記載のスイッチング素子。
- 電気化学反応を利用したスイッチング素子であって、
前記電気化学反応に用いられる金属イオンが伝導するためのイオン伝導体と、
前記イオン伝導体に接して設けられたソース電極と、
前記スイッチング素子をオン状態に遷移させる電圧が印加されると前記金属イオンによる金属を析出させて該ソース電極と電気的に接続され、前記スイッチング素子をオフ状態に遷移させる電圧が印加されると前記析出した金属を溶解させて該ソース電極との電気的接続が切られる、前記イオン伝導体に接して該ソース電極と所定の距離だけ離れて設けられたドレイン電極と、
前記ソース電極に対して正の電圧が印加されると前記ソース電極およびドレイン電極間に流れる電流であるドレイン電流を増加させ、該ソース電極に対して負の電圧が印加されると該ドレイン電流を減少させるための、前記イオン伝導体に接して設けられたゲート電極と、
を有するスイッチング素子。 - 電気化学反応を利用したスイッチング素子であって、
前記電気化学反応に用いられる金属イオンが伝導するためのイオン伝導体と、
前記イオン伝導体に接して設けられたソース電極と、
所定の電圧が所定の時間印加されると前記金属イオンによる金属が析出される、前記イオン伝導体に接して該ソース電極と所定の距離だけ離れて設けられたドレイン電極と、
前記ドレイン電極に所定の電圧が所定の時間印加された後、前記スイッチング素子をオン状態に遷移させる電圧が印加されると前記金属イオンよる金属を析出させて前記ソース電極とドレイン電極とを電気的に接続するための、前記イオン伝導体に接して設けられたゲート電極と、
を有するスイッチング素子。 - 前記スイッチング素子がオン状態またはオフ状態になった後、前記ゲート電極および前記ドレイン電極への電圧の印加が停止されても、該状態を保持する請求項3または4記載のスイッチング素子。
- 前記ゲート電極は前記イオン伝導体に前記金属イオンを供給するための材料を含み、
前記ソース電極およびドレイン電極が前記イオン伝導体と接する部位は前記イオン伝導体と反応しない材料である請求項1または2記載のスイッチング素子。 - 前記ゲート電極およびドレイン電極は前記イオン伝導体に前記金属イオンを供給するための材料を含み、
前記ソース電極が前記イオン伝導体と接する部位は前記イオン伝導体と反応しない材料である請求項3乃至5のいずれか1項記載のスイッチング素子。 - 前記イオン伝導体と前記金属イオンを供給するための材料のそれぞれが、硫化銅と銅、または硫化銀と銀であって、
前記イオン伝導体と反応しない材料が、白金、アルミニウム、金、チタン、タングステン、バナジウム、ニオブ、タンタル、クロム、およびモリブデンの金属、ならびにこれらの金属の窒化物、およびこれらの金属のシリ化物のうち少なくともいずれか1つを含む請求項6または7記載のスイッチング素子。 - 前記ソース電極およびドレイン電極が前記ゲート電極の平面パターンに対して平行な同一平面内に形成され、該ソース電極およびドレイン電極のうち少なくともいずれか一方の平面パターンに尖鋭部を有し、
前記ソース電極と前記ドレイン電極との最短距離が前記一方の電極の尖鋭部から他方の電極までの距離で表わされる請求項1乃至8のいずれか1項記載のスイッチング素子。 - 前記イオン伝導体が、元素の周期律表における6B族の元素を含んだカルコゲナイト材料と、金属イオン性非晶質半導体と、金属イオン性ガラスとのうち少なくともいずれか一つを含む請求項1乃至9のいずれか1項記載のスイッチング素子。
- 前記イオン伝導体が電解液である請求項1乃至10のいずれか1項記載のスイッチング素子。
- 請求項1乃至10のいずれか1項記載のスイッチング素子をプログラム用素子に用いた書き換え可能な論理集積回路。
- 請求項1乃至10のいずれか1項記載のスイッチング素子と、
前記スイッチング素子がオン状態およびオフ状態のいずれの状態であるかを読み出すためのトランジスタと、
を有するメモリ素子。
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DE112004000060B4 (de) | 2011-01-27 |
CN100407440C (zh) | 2008-07-30 |
US7116573B2 (en) | 2006-10-03 |
CN1706046A (zh) | 2005-12-07 |
KR20060055437A (ko) | 2006-05-23 |
WO2005008783A1 (ja) | 2005-01-27 |
JP4321524B2 (ja) | 2009-08-26 |
DE112004000060T5 (de) | 2006-06-14 |
USRE42040E1 (en) | 2011-01-18 |
KR100778950B1 (ko) | 2007-11-22 |
JP4984720B2 (ja) | 2012-07-25 |
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