JP5135796B2 - スイッチング素子、および書き換え可能な論理集積回路 - Google Patents
スイッチング素子、および書き換え可能な論理集積回路 Download PDFInfo
- Publication number
- JP5135796B2 JP5135796B2 JP2006550720A JP2006550720A JP5135796B2 JP 5135796 B2 JP5135796 B2 JP 5135796B2 JP 2006550720 A JP2006550720 A JP 2006550720A JP 2006550720 A JP2006550720 A JP 2006550720A JP 5135796 B2 JP5135796 B2 JP 5135796B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- conductive layer
- ion conductive
- layer
- switching element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more terminals, e.g. transistor-like devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
Description
31、32 第2電極
34、35 第3電極
40、42 イオン伝導層
90 拡散防止層
Claims (7)
- 金属イオンを伝導するためのイオン伝導層と、
前記イオン伝導層に接して設けられた第1電極および第2電極と、
前記イオン伝導層に前記金属イオンを供給可能な第3電極と、
前記イオン伝導層および第3電極の間に設けられ、該第3電極から前記イオン伝導層に金属イオンが拡散するのを防止するための拡散防止層と、
を有し、
前記イオン伝導層は硫化銅で形成され、前記拡散防止層は酸化タンタル、シリコン酸化膜、またはアルミナで形成されている、スイッチング素子。 - 前記第1電極および第2電極を接続する金属析出物が設けられた請求項1記載のスイッチング素子。
- 前記第2電極は前記イオン伝導層に前記金属イオンを供給可能な材料を有し、
前記第2電極およびイオン伝導層の間に前記拡散防止層が設けられた請求項1または2記載のスイッチング素子。 - 少なくとも金属イオンを伝導するためのイオン伝導層と、第1電極と、第2電極と、前記イオン伝導層に前記金属イオンを供給可能な第3電極と、よりなるスイッチング素子であって、
前記第1電極は前記イオン伝導層の一方の面に接して設けられ、
前記イオン伝導層の他方の面には前記第2電極と、前記第3電極が離間して設けられ、
前記第2電極は前記イオン伝導層と接しており、
前記第3電極と前記イオン伝導層の間には拡散防止層を有し、
前記イオン伝導層は硫化銅で形成され、前記拡散防止層は酸化タンタル、シリコン酸化膜、またはアルミナで形成されていることを特徴とするスイッチング素子。 - 少なくとも金属イオンを伝導するためのイオン伝導層と、第1電極と、第2電極と、前記イオン伝導層に前記金属イオンを供給可能な第3電極と、よりなるスイッチング素子であって、
基体上に前記第2電極と前記第3電極が離間して設けられ、
少なくとも前記第3電極上には第1の拡散防止層を有し、
少なくとも前記第2電極と前記第3電極の間及び前記第1の拡散防止層に接するように前記イオン伝導層が設けられ、前記イオン伝導層上に前記第1電極が設けられ、
前記イオン伝導層は硫化銅で形成され、前記第1の拡散防止層は酸化タンタル、シリコン酸化膜、またはアルミナで形成されていることを特徴とするスイッチング素子。 - 前記第2電極上に第2の拡散防止層を有し、前記イオン伝導層が第2の拡散防止層上にも延在し、該第2の拡散防止層は酸化タンタル、シリコン酸化膜、またはアルミナで形成されていることを特徴とする請求項5記載のスイッチング素子。
- 請求項1から6のいずれか1項記載のスイッチング素子をスイッチに用いた書き換え可能な論理集積回路。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006550720A JP5135796B2 (ja) | 2004-12-28 | 2005-12-22 | スイッチング素子、および書き換え可能な論理集積回路 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004378699 | 2004-12-28 | ||
JP2004378699 | 2004-12-28 | ||
JP2006550720A JP5135796B2 (ja) | 2004-12-28 | 2005-12-22 | スイッチング素子、および書き換え可能な論理集積回路 |
PCT/JP2005/023571 WO2006070681A1 (ja) | 2004-12-28 | 2005-12-22 | スイッチング素子、および書き換え可能な論理集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2006070681A1 JPWO2006070681A1 (ja) | 2008-08-07 |
JP5135796B2 true JP5135796B2 (ja) | 2013-02-06 |
Family
ID=36614798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006550720A Expired - Fee Related JP5135796B2 (ja) | 2004-12-28 | 2005-12-22 | スイッチング素子、および書き換え可能な論理集積回路 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7781891B2 (ja) |
JP (1) | JP5135796B2 (ja) |
WO (1) | WO2006070681A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7804085B2 (en) * | 2005-01-17 | 2010-09-28 | Nec Corporation | Solid electrolyte switching element, and fabrication method of the solid electrolyte element, and integrated circuit |
WO2009157479A1 (ja) * | 2008-06-26 | 2009-12-30 | 日本電気株式会社 | スイッチング素子およびスイッチング素子の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5761115A (en) * | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
JP2006123267A (ja) * | 2004-10-27 | 2006-05-18 | Shinano Kenshi Co Ltd | マーキング装置 |
JP2006173267A (ja) * | 2004-12-14 | 2006-06-29 | Sony Corp | 記憶素子及び記憶装置 |
WO2006070773A1 (ja) * | 2004-12-28 | 2006-07-06 | Nec Corporation | スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999028914A2 (en) | 1997-12-04 | 1999-06-10 | Axon Technologies Corporation | Programmable sub-surface aggregating metallization structure and method of making same |
WO2000048196A1 (en) | 1999-02-11 | 2000-08-17 | Arizona Board Of Regents | Programmable microelectronic devices and methods of forming and programming same |
JP3593582B2 (ja) | 2001-09-19 | 2004-11-24 | 彰 土井 | 銀イオン含有イオン伝導体の電界誘導黒化現象を利用した記憶素子 |
JP4332881B2 (ja) * | 2002-04-30 | 2009-09-16 | 独立行政法人科学技術振興機構 | 固体電解質スイッチング素子及びそれを用いたfpga、メモリ素子、並びに固体電解質スイッチング素子の製造方法 |
US7186998B2 (en) * | 2003-03-10 | 2007-03-06 | Energy Conversion Devices, Inc. | Multi-terminal device having logic functional |
US7050319B2 (en) * | 2003-12-03 | 2006-05-23 | Micron Technology, Inc. | Memory architecture and method of manufacture and operation thereof |
-
2005
- 2005-12-22 WO PCT/JP2005/023571 patent/WO2006070681A1/ja active Application Filing
- 2005-12-22 US US11/813,072 patent/US7781891B2/en active Active
- 2005-12-22 JP JP2006550720A patent/JP5135796B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5761115A (en) * | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
JP2006123267A (ja) * | 2004-10-27 | 2006-05-18 | Shinano Kenshi Co Ltd | マーキング装置 |
JP2006173267A (ja) * | 2004-12-14 | 2006-06-29 | Sony Corp | 記憶素子及び記憶装置 |
WO2006070773A1 (ja) * | 2004-12-28 | 2006-07-06 | Nec Corporation | スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子 |
Non-Patent Citations (2)
Title |
---|
JPN6012053539; N.Banno et al.: 'Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Swi' IEEE Transactions on Electron Devices Vol.55, No.11, 200811, pp.3283-3287 * |
JPN6012053540; K.Aratani et al.: 'A Novel Resistance Memory with High Scalability and Nanosecond Switching' Electron Devices Meeting, 2007. IEDM 2007. IEEE International , 20071210, pp.783-786 * |
Also Published As
Publication number | Publication date |
---|---|
JPWO2006070681A1 (ja) | 2008-08-07 |
US7781891B2 (en) | 2010-08-24 |
WO2006070681A1 (ja) | 2006-07-06 |
US20080211096A1 (en) | 2008-09-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5066918B2 (ja) | スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子 | |
US7960712B2 (en) | Switching element, switching element drive method and fabrication method, reconfigurable logic integrated circuit, and memory element | |
JP5135797B2 (ja) | スイッチング素子、スイッチング素子の製造方法、書き換え可能な論理集積回路、およびメモリ素子 | |
US7888228B2 (en) | Method of manufacturing an integrated circuit, an integrated circuit, and a memory module | |
US6653193B2 (en) | Resistance variable device | |
JP2006319028A (ja) | スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子 | |
KR20080044287A (ko) | 재생가능 가변 저항 절연 메모리 장치 및 그 형성 방법 | |
US7981760B2 (en) | Method for manufacturing nonvolatile storage element and method for manufacturing nonvolatile storage device | |
JP5417709B2 (ja) | スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子 | |
US20110253967A1 (en) | Switching device, drive and manufacturing methods for the same, integrated circuit device and memory device | |
JP5135796B2 (ja) | スイッチング素子、および書き換え可能な論理集積回路 | |
JP5477687B2 (ja) | スイッチング素子、スイッチング素子の動作方法、スイッチング素子の製造方法、書き換え可能な論理集積回路およびメモリ素子 | |
JP2012216724A (ja) | 抵抗記憶装置およびその書き込み方法 | |
JP5446869B2 (ja) | スイッチング素子、およびスイッチング素子の製造方法 | |
WO2018123678A1 (ja) | 抵抗変化素子と半導体装置および製造方法 | |
JP5023615B2 (ja) | スイッチング素子の駆動方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20081112 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120403 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120604 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120717 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120918 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121016 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121029 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5135796 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151122 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |