FI20085737L - Komponentteja ja piirijärjestelyjä, joissa on ainakin yksi orgaaninen kenttävaikutustransistori - Google Patents

Komponentteja ja piirijärjestelyjä, joissa on ainakin yksi orgaaninen kenttävaikutustransistori Download PDF

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Publication number
FI20085737L
FI20085737L FI20085737A FI20085737A FI20085737L FI 20085737 L FI20085737 L FI 20085737L FI 20085737 A FI20085737 A FI 20085737A FI 20085737 A FI20085737 A FI 20085737A FI 20085737 L FI20085737 L FI 20085737L
Authority
FI
Finland
Prior art keywords
components
field effect
effect transistor
organic field
circuit arrangements
Prior art date
Application number
FI20085737A
Other languages
English (en)
Swedish (sv)
Other versions
FI20085737A0 (fi
Inventor
Ronald Oesterbacka
Carl-Erik Wilen
Nikolai Kaihovirta
Carl-Johan Wikman
Tapio Maekelae
Original Assignee
Ronald Oesterbacka
Carl-Erik Wilen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ronald Oesterbacka, Carl-Erik Wilen filed Critical Ronald Oesterbacka
Priority to FI20085737A priority Critical patent/FI20085737L/fi
Publication of FI20085737A0 publication Critical patent/FI20085737A0/fi
Priority to PCT/FI2009/050635 priority patent/WO2010010233A1/en
Priority to EP09800107A priority patent/EP2308113A1/en
Priority to US13/055,248 priority patent/US20110175074A1/en
Publication of FI20085737L publication Critical patent/FI20085737L/fi

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/1506—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect caused by electrodeposition, e.g. electrolytic deposition of an inorganic material on or close to an electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M12/00—Hybrid cells; Manufacture thereof
    • H01M12/04—Hybrid cells; Manufacture thereof composed of a half-cell of the fuel-cell type and of a half-cell of the primary-cell type
    • H01M12/06—Hybrid cells; Manufacture thereof composed of a half-cell of the fuel-cell type and of a half-cell of the primary-cell type with one metallic and one gaseous electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
FI20085737A 2008-07-21 2008-07-21 Komponentteja ja piirijärjestelyjä, joissa on ainakin yksi orgaaninen kenttävaikutustransistori FI20085737L (fi)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FI20085737A FI20085737L (fi) 2008-07-21 2008-07-21 Komponentteja ja piirijärjestelyjä, joissa on ainakin yksi orgaaninen kenttävaikutustransistori
PCT/FI2009/050635 WO2010010233A1 (en) 2008-07-21 2009-07-20 Components and circuit arrangements including at least one organic field-effect transistor
EP09800107A EP2308113A1 (en) 2008-07-21 2009-07-20 Components and circuit arrangements including at least one organic field-effect transistor
US13/055,248 US20110175074A1 (en) 2008-07-21 2009-07-20 Components and circuit arrangements including at least one organic field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20085737A FI20085737L (fi) 2008-07-21 2008-07-21 Komponentteja ja piirijärjestelyjä, joissa on ainakin yksi orgaaninen kenttävaikutustransistori

Publications (2)

Publication Number Publication Date
FI20085737A0 FI20085737A0 (fi) 2008-07-21
FI20085737L true FI20085737L (fi) 2010-01-22

Family

ID=39677615

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20085737A FI20085737L (fi) 2008-07-21 2008-07-21 Komponentteja ja piirijärjestelyjä, joissa on ainakin yksi orgaaninen kenttävaikutustransistori

Country Status (4)

Country Link
US (1) US20110175074A1 (fi)
EP (1) EP2308113A1 (fi)
FI (1) FI20085737L (fi)
WO (1) WO2010010233A1 (fi)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190309433A1 (en) * 2016-10-10 2019-10-10 Biolinq, Inc. Electro-Deposited Conducting Polymers For The Realization Of Solid-State Reference Electrodes For Use In Intracutaneous And Subcutaneous Analyte-Selective Sensors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3719172B2 (ja) * 2000-08-31 2005-11-24 セイコーエプソン株式会社 表示装置及び電子機器
ATE393411T1 (de) * 2001-03-07 2008-05-15 Acreo Ab Elektrochemische pixel-einrichtung
US7012306B2 (en) * 2001-03-07 2006-03-14 Acreo Ab Electrochemical device
DE112004000060B4 (de) * 2003-07-18 2011-01-27 Nec Corp. Schaltelemente
EP1648040B1 (en) * 2004-08-31 2016-06-01 Osaka University Thin-layer chemical transistors and their manufacture
JP4994727B2 (ja) * 2005-09-08 2012-08-08 株式会社リコー 有機トランジスタアクティブ基板とその製造方法および該有機トランジスタアクティブ基板を用いた電気泳動ディスプレイ
FI20070063A0 (fi) * 2007-01-24 2007-01-24 Ronald Oesterbacka Orgaaninen kenttävaikutustransistori
IT1392321B1 (it) * 2008-12-15 2012-02-24 St Microelectronics Srl Sistema sensore/attuatore interamente in materiale organico
JP2011221098A (ja) * 2010-04-05 2011-11-04 Seiko Epson Corp 電気光学装置用基板、電気光学装置、及び電子機器

Also Published As

Publication number Publication date
WO2010010233A1 (en) 2010-01-28
EP2308113A1 (en) 2011-04-13
US20110175074A1 (en) 2011-07-21
FI20085737A0 (fi) 2008-07-21

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