JP4963744B2 - 磁気抵抗素子 - Google Patents
磁気抵抗素子 Download PDFInfo
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- JP4963744B2 JP4963744B2 JP2011226906A JP2011226906A JP4963744B2 JP 4963744 B2 JP4963744 B2 JP 4963744B2 JP 2011226906 A JP2011226906 A JP 2011226906A JP 2011226906 A JP2011226906 A JP 2011226906A JP 4963744 B2 JP4963744 B2 JP 4963744B2
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- 230000004888 barrier function Effects 0.000 claims description 54
- 239000013078 crystal Substances 0.000 claims description 47
- 230000005294 ferromagnetic effect Effects 0.000 claims description 23
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 230000005291 magnetic effect Effects 0.000 claims description 10
- 230000005415 magnetization Effects 0.000 claims description 9
- 230000005641 tunneling Effects 0.000 claims description 6
- 239000003574 free electron Substances 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 98
- 239000000395 magnesium oxide Substances 0.000 description 81
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 81
- 239000010410 layer Substances 0.000 description 70
- 238000000034 method Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 238000000151 deposition Methods 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910018516 Al—O Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000001427 coherent effect Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005566 electron beam evaporation Methods 0.000 description 6
- 229910001004 magnetic alloy Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 4
- 206010021143 Hypoxia Diseases 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002772 conduction electron Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/132—Amorphous metallic alloys, e.g. glassy metals containing cobalt
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Thin Magnetic Films (AREA)
Description
ここで、Rp及びRapは、2つの電極の磁化が平行と反平行の場合のトンネル接合抵抗である。Jullireの公式によれば、低バイアス電圧におけるMR比は、以下のように表される。
MR比=(Rap−Rp)/Rp=2P1P2/(1−P1P2)であり、
Pα=(Dα↑(EF)−Dα↓(EF))/(Dα↑(EF)+Dα↓(EF)、α=1,2 (1)
と表される。
ここで、mは自由電子の質量(9.11×10−31kg)、eは素電荷(1.60×10−19C)、hはプランク定数(6.63×10−34J・s)である。また、トンネル障壁の有効厚さΔsは、Δs≒tMgO−0.5nmである。TMR素子の低バイアス電圧領域のJ−V特性を(2)式にフィッティングすれば、トンネル障壁の高さφを簡便かつ正確に見積もることが出来る。
Claims (3)
- BCC構造を有するFe系合金であって(001)結晶面が優先配向した単結晶または(001)結晶面が優先配向した多結晶からなる第1の強磁性体層と、
BCC構造を有するFe系合金であって(001)結晶面が優先配向した単結晶または(001)結晶面が優先配向した多結晶からなる第2の強磁性体層と、
前記第1の強磁性体層と前記第2の強磁性体層との間に位置するトンネル障壁層とを有し、
前記トンネル障壁層が、(001)結晶面が優先配向した単結晶MgOあるいは(001)結晶面が優先配向した多結晶MgOを含む磁気抵抗素子であって、
前記磁気抵抗素子に100mV以下のバイアス電圧Vを印加した場合の、前記(001)結晶面が優先配向した単結晶MgOあるいは(001)結晶面が優先配向した多結晶MgOを流れるトンネル電流の電流密度Jから、
式) J=[(2mφ)1/2/Δs](e/h)2×exp[−(4πΔs/h)×(2mφ)1/2]×V
でフィッティングすることにより求められる前記(001)結晶面が優先配向した単結晶MgOあるいは(001)結晶面が優先配向した多結晶MgOのトンネル障壁の高さφが0.2〜0.5eVであることを特徴とする磁気トンネル接合構造を備えた磁気抵抗素子。
但し、
mは自由電子の質量、
eは素電荷、
hはプランク定数、
Δs≒tMgO−0.5nm、
tMgOは断面TEM写真を用いて求めた前記トンネル障壁層の膜厚
である。 - 前記磁気抵抗素子は、室温での出力電圧が
式)(Rap−Rp)/Rap
から求められる抵抗比に前記磁気抵抗素子に印加されるバイアス電圧を乗算することに求められる前記磁気抵抗素子の出力電圧が200mVより高いことを特徴とする請求項1に記載の磁気抵抗素子。
但し、
Rp及びRapは上記第1の強磁性体層および上記第2の強磁性体層の磁化が平行と反平行の場合の磁気トンネル接合の抵抗である。 - 前記第1および第2の強磁性体層における前記BCC構造を有するFe系合金はCoを含むFe系合金であることを特徴とする請求項1または2に記載の磁気抵抗素子。
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JP2011226906A JP4963744B2 (ja) | 2004-03-12 | 2011-10-14 | 磁気抵抗素子 |
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JP2004071186 | 2004-03-12 | ||
JP2004071186 | 2004-03-12 | ||
JP2004313350 | 2004-10-28 | ||
JP2004313350 | 2004-10-28 | ||
JP2011226906A JP4963744B2 (ja) | 2004-03-12 | 2011-10-14 | 磁気抵抗素子 |
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JP2008238154A Division JP2009021626A (ja) | 2004-03-12 | 2008-09-17 | 磁気多層膜及び多層構造体 |
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JP2012033957A JP2012033957A (ja) | 2012-02-16 |
JP4963744B2 true JP4963744B2 (ja) | 2012-06-27 |
Family
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JP2006511062A Active JP4082711B2 (ja) | 2004-03-12 | 2005-03-10 | 磁気抵抗素子及びその製造方法 |
JP2008238154A Ceased JP2009021626A (ja) | 2004-03-12 | 2008-09-17 | 磁気多層膜及び多層構造体 |
JP2011226906A Active JP4963744B2 (ja) | 2004-03-12 | 2011-10-14 | 磁気抵抗素子 |
JP2011226908A Active JP5152734B2 (ja) | 2004-03-12 | 2011-10-14 | 磁気多層膜 |
JP2011226907A Active JP5002788B2 (ja) | 2004-03-12 | 2011-10-14 | 磁気抵抗素子および磁気抵抗素子の製造方法 |
JP2012067089A Active JP5120680B2 (ja) | 2004-03-12 | 2012-03-23 | 磁気抵抗素子および磁気抵抗素子の製造方法 |
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JP2008238154A Ceased JP2009021626A (ja) | 2004-03-12 | 2008-09-17 | 磁気多層膜及び多層構造体 |
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---|---|
US (13) | US7884403B2 (ja) |
EP (1) | EP1737055B1 (ja) |
JP (6) | JP4082711B2 (ja) |
KR (1) | KR100867662B1 (ja) |
TW (1) | TWI334663B (ja) |
WO (1) | WO2005088745A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10680167B2 (en) | 2004-03-12 | 2020-06-09 | Japan Science And Technology Agency | Magnetic tunnel junction device |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US10680167B2 (en) | 2004-03-12 | 2020-06-09 | Japan Science And Technology Agency | Magnetic tunnel junction device |
US11233193B2 (en) | 2004-03-12 | 2022-01-25 | Japan Science And Technology Agency | Method of manufacturing a magnetorestive random access memeory (MRAM) |
US11737372B2 (en) | 2004-03-12 | 2023-08-22 | Godo Kaisha Ip Bridge 1 | Method of manufacturing a magnetoresistive random access memory (MRAM) |
US11968909B2 (en) | 2004-03-12 | 2024-04-23 | Godo Kaisha Ip Bridge 1 | Method of manufacturing a magnetoresistive random access memory (MRAM) |
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