JP2009021626A - 磁気多層膜及び多層構造体 - Google Patents
磁気多層膜及び多層構造体 Download PDFInfo
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- JP2009021626A JP2009021626A JP2008238154A JP2008238154A JP2009021626A JP 2009021626 A JP2009021626 A JP 2009021626A JP 2008238154 A JP2008238154 A JP 2008238154A JP 2008238154 A JP2008238154 A JP 2008238154A JP 2009021626 A JP2009021626 A JP 2009021626A
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- 230000005291 magnetic effect Effects 0.000 title claims description 20
- 239000013078 crystal Substances 0.000 claims abstract description 40
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 32
- 229910019236 CoFeB Inorganic materials 0.000 claims abstract description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 103
- 239000000395 magnesium oxide Substances 0.000 claims description 86
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 86
- 230000004888 barrier function Effects 0.000 claims description 51
- 229910001004 magnetic alloy Inorganic materials 0.000 claims description 12
- 206010021143 Hypoxia Diseases 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 22
- 229910052760 oxygen Inorganic materials 0.000 abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 12
- 239000001301 oxygen Substances 0.000 abstract description 12
- 229910045601 alloy Inorganic materials 0.000 abstract description 9
- 239000000956 alloy Substances 0.000 abstract description 9
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- 238000007740 vapor deposition Methods 0.000 abstract description 4
- 229910017947 MgOx Inorganic materials 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 70
- 238000010586 diagram Methods 0.000 description 15
- 238000000151 deposition Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910018516 Al—O Inorganic materials 0.000 description 8
- 230000005415 magnetization Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000001427 coherent effect Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005566 electron beam evaporation Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000005641 tunneling Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002772 conduction electron Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/132—Amorphous metallic alloys, e.g. glassy metals containing cobalt
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N50/00—Galvanomagnetic devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Thin Magnetic Films (AREA)
Abstract
【解決手段】磁気抵抗素子は、単結晶MgOx(001)あるいは(001)結晶面が優先配向した酸素欠損多結晶MgOx(0<x<1)層503の両側に設けられる電極として、アモルファス強磁性合金、例えばCoFeB層501、505を用いた点に特徴がある。アモルファス強磁性合金は、例えば蒸着法或いはスパッタリング法を用いて形成可能である。得られた特性等は第1の実施の形態の場合とほぼ同様である。
【選択図】図11
Description
ここで、Rp及びRapは、2つの電極の磁化が平行と反平行の場合のトンネル接合抵抗である。Jullireの公式によれば、低バイアス電圧におけるMR比は、以下のように表される。
MR比=(Rap−Rp)/Rp=2P1P2/(1−P1P2)であり、
Pα=(Dα↑(EF)−Dα↓(EF))/(Dα↑(EF)+Dα↓(EF)、α=1,2 (1)
と表される。
ここで、mは自由電子の質量(9.11×10−31kg)、eは素電荷(1.60×10−19C)、hはプランク定数(6.63×10−34J・s)である。また、トンネル障壁の有効厚さΔsは、Δs≒tMgO−0.5nmである。TMR素子の低バイアス電圧領域のJ−V特性を(2)式にフィッティングすれば、トンネル障壁の高さφを簡便かつ正確に見積もることが出来る。
Claims (10)
- アモルファス磁性合金からなる第1の強磁性体層、アモルファス磁性合金からなる第2の強磁性体層、及び該第1の強磁性層と該第2の強磁性層との間に位置する酸化マグネシウム結晶層、を有することを特徴とする磁気多層膜。
- アモルファス磁性合金からなる第1の強磁性体層、アモルファス磁性合金からなる第2の強磁性体層、及び該第1の強磁性層と該第2の強磁性層との間に位置する(001)結晶面が優先配向した多結晶の酸化マグネシウム層、を有することを特徴とする磁気多層膜。
- 前記第1の強磁性体層及び前記第2の強磁性体層は、アモルファスCoFeB層を有することを特徴とする請求項1又は2に記載の磁気多層膜。
- 磁性合金からなる第1の強磁性体層、磁性合金からなる第2の強磁性体層、及び該第1の強磁性体層と該第2の強磁性体層との間に位置する酸素欠損の酸化マグネシウム結晶層、を有することを特徴とする磁気多層膜。
- 基体と、該基体の上に形成された、アモルファスCoFeBの第1の磁性体層と、酸化マグネシウムの結晶性層と、第2の磁性体層と、を有する多層構造体。
- 前記酸化マグネシウムの結晶性層は、多結晶構造である請求項5に記載の多層構造体。
- 前記酸化マグネシウムの結晶性層は、(001)結晶面が優先配向した多結晶構造である請求項5に記載の多層構造体。
- 前記第2の磁性体層がアモルファスCoFeBである請求項5に記載の多層構造体。
- アニール処理されて、前記第1の磁性体層と前記第2の磁性体層とに結晶性が生じている請求項5から8までのいずれか1項に記載の多層構造体。
- 前記第1の磁性体層とトンネル障壁層と前記第2の磁性体層とがこの順で積層してある請求項9に記載の多層構造体。
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JP2008238154A JP2009021626A (ja) | 2004-03-12 | 2008-09-17 | 磁気多層膜及び多層構造体 |
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JP2004071186 | 2004-03-12 | ||
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JP2007210197A Division JP4581133B2 (ja) | 2004-03-12 | 2007-08-10 | 磁気抵抗素子 |
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JP2011226908A Division JP5152734B2 (ja) | 2004-03-12 | 2011-10-14 | 磁気多層膜 |
JP2011226907A Division JP5002788B2 (ja) | 2004-03-12 | 2011-10-14 | 磁気抵抗素子および磁気抵抗素子の製造方法 |
JP2011226906A Division JP4963744B2 (ja) | 2004-03-12 | 2011-10-14 | 磁気抵抗素子 |
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JP2006511062A Active JP4082711B2 (ja) | 2004-03-12 | 2005-03-10 | 磁気抵抗素子及びその製造方法 |
JP2008238154A Ceased JP2009021626A (ja) | 2004-03-12 | 2008-09-17 | 磁気多層膜及び多層構造体 |
JP2011226908A Active JP5152734B2 (ja) | 2004-03-12 | 2011-10-14 | 磁気多層膜 |
JP2011226907A Active JP5002788B2 (ja) | 2004-03-12 | 2011-10-14 | 磁気抵抗素子および磁気抵抗素子の製造方法 |
JP2011226906A Active JP4963744B2 (ja) | 2004-03-12 | 2011-10-14 | 磁気抵抗素子 |
JP2012067089A Active JP5120680B2 (ja) | 2004-03-12 | 2012-03-23 | 磁気抵抗素子および磁気抵抗素子の製造方法 |
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JP2011226906A Active JP4963744B2 (ja) | 2004-03-12 | 2011-10-14 | 磁気抵抗素子 |
JP2012067089A Active JP5120680B2 (ja) | 2004-03-12 | 2012-03-23 | 磁気抵抗素子および磁気抵抗素子の製造方法 |
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US (13) | US7884403B2 (ja) |
EP (1) | EP1737055B1 (ja) |
JP (6) | JP4082711B2 (ja) |
KR (1) | KR100867662B1 (ja) |
TW (1) | TWI334663B (ja) |
WO (1) | WO2005088745A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US10680167B2 (en) | 2004-03-12 | 2020-06-09 | Japan Science And Technology Agency | Magnetic tunnel junction device |
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US7386529B2 (en) * | 2002-12-19 | 2008-06-10 | Mathon Systems, Inc. | System and method for managing content with event driven actions to facilitate workflow and other features |
JP4581133B2 (ja) * | 2004-03-12 | 2010-11-17 | 独立行政法人科学技術振興機構 | 磁気抵抗素子 |
JP4292128B2 (ja) * | 2004-09-07 | 2009-07-08 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法 |
JP2006210391A (ja) * | 2005-01-25 | 2006-08-10 | Japan Science & Technology Agency | 磁気抵抗素子及びその製造方法 |
JP5077802B2 (ja) | 2005-02-16 | 2012-11-21 | 日本電気株式会社 | 積層強磁性構造体、及び、mtj素子 |
JP4877575B2 (ja) * | 2005-05-19 | 2012-02-15 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
JP2008283207A (ja) * | 2005-10-19 | 2008-11-20 | Toshiba Corp | 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置 |
JP4444241B2 (ja) | 2005-10-19 | 2010-03-31 | 株式会社東芝 | 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置 |
US7479394B2 (en) * | 2005-12-22 | 2009-01-20 | Magic Technologies, Inc. | MgO/NiFe MTJ for high performance MRAM application |
US7851785B2 (en) * | 2006-02-08 | 2010-12-14 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic tunnel transistor with thin read gap for head applications |
CN101615653B (zh) * | 2006-03-03 | 2012-07-18 | 佳能安内华股份有限公司 | 磁阻效应元件的制造方法以及制造设备 |
JP2008010509A (ja) * | 2006-06-27 | 2008-01-17 | Fujitsu Ltd | 磁気抵抗効果素子及び磁気ディスク装置 |
WO2008133107A1 (ja) * | 2007-04-24 | 2008-11-06 | Nec Corporation | 磁気抵抗素子、mram、及び磁気センサー |
JP5062832B2 (ja) | 2007-12-28 | 2012-10-31 | 富士通株式会社 | 磁気抵抗効果素子の製造方法 |
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WO2009110469A1 (ja) * | 2008-03-03 | 2009-09-11 | キヤノンアネルバ株式会社 | 磁気トンネル接合デバイスの製造方法及び磁気トンネル接合デバイスの製造装置 |
JP4774082B2 (ja) * | 2008-06-23 | 2011-09-14 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法 |
US20110084348A1 (en) * | 2008-09-01 | 2011-04-14 | Canon Anelva Corporation | Magnetoresistance element, method of manufacturing the same, and storage medium used in the manufacturing method |
WO2010026705A1 (ja) * | 2008-09-08 | 2010-03-11 | キヤノンアネルバ株式会社 | 磁気抵抗素子とその製造方法、該製造方法に用いる記憶媒体 |
KR20110040894A (ko) * | 2008-09-09 | 2011-04-20 | 캐논 아네르바 가부시키가이샤 | 자기 저항 소자의 제조 방법, 그 제조 방법에 이용되는 기억 매체 |
JP4764466B2 (ja) * | 2008-09-25 | 2011-09-07 | 株式会社東芝 | ホイスラー合金を有する積層体、この積層体を用いた磁気抵抗素子、及びスピントランジスタ |
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US10680167B2 (en) | 2004-03-12 | 2020-06-09 | Japan Science And Technology Agency | Magnetic tunnel junction device |
US11233193B2 (en) | 2004-03-12 | 2022-01-25 | Japan Science And Technology Agency | Method of manufacturing a magnetorestive random access memeory (MRAM) |
US11737372B2 (en) | 2004-03-12 | 2023-08-22 | Godo Kaisha Ip Bridge 1 | Method of manufacturing a magnetoresistive random access memory (MRAM) |
US11968909B2 (en) | 2004-03-12 | 2024-04-23 | Godo Kaisha Ip Bridge 1 | Method of manufacturing a magnetoresistive random access memory (MRAM) |
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