WO2001056090A1 - Dispositif a magnetoresistance et procede de fabrication de celui-ci, base pour dispositif a magnetoresistance et procede de fabrication de celle-ci, et capteur a magnetoresistance - Google Patents
Dispositif a magnetoresistance et procede de fabrication de celui-ci, base pour dispositif a magnetoresistance et procede de fabrication de celle-ci, et capteur a magnetoresistance Download PDFInfo
- Publication number
- WO2001056090A1 WO2001056090A1 PCT/JP2001/000475 JP0100475W WO0156090A1 WO 2001056090 A1 WO2001056090 A1 WO 2001056090A1 JP 0100475 W JP0100475 W JP 0100475W WO 0156090 A1 WO0156090 A1 WO 0156090A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- substrate
- film
- buffer member
- chamber
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Abstract
L'invention concerne un dispositif à magnétorésistance qui présente une structure du type réseau artificiel ou « spin valve », un rapport MR élevé avec une quantité d'oxygène aussi faible que possible dans une structure multicouche, et une excellente stabilité thermique. Le dispositif à magnétorésistance comporte une structure dans laquelle les couches non magnétiques et les couches ferromagnétiques sont formées sur une base ; ou les couches non magnétiques et les couches ferromagnétiques alternées sont formées sur une base, et une couche non ferromagnétique est formée sur la couche ferromagnétique la plus élevée. Le dispositif est caractérisé en ce qu'un élément tampon est prévu sur la surface, côté base, de la couche ferromagnétique la plus proche de la base ; cet élément est constitué d'au moins un premier élément sélectionné dans le groupe comprenant Si, B, C et Ge, et d'au moins un deuxième élément sélectionné dans le groupe comprenant Fe, Ti, Cr, Mn, Co, Ni, Cu, Zr, Hf et Ta.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-24823 | 2000-01-28 | ||
JP2000024823 | 2000-01-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001056090A1 true WO2001056090A1 (fr) | 2001-08-02 |
Family
ID=18550753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/000475 WO2001056090A1 (fr) | 2000-01-28 | 2001-01-25 | Dispositif a magnetoresistance et procede de fabrication de celui-ci, base pour dispositif a magnetoresistance et procede de fabrication de celle-ci, et capteur a magnetoresistance |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2001056090A1 (fr) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003086866A (ja) * | 2001-09-13 | 2003-03-20 | Anelva Corp | スピンバルブ型巨大磁気抵抗薄膜の製造方法 |
US7418777B2 (en) | 2000-03-29 | 2008-09-02 | Tdk Corporation | Method on manufacturing spin valve film |
JP2009055049A (ja) * | 2008-10-06 | 2009-03-12 | Canon Anelva Corp | マルチチャンバ成膜装置 |
US7813088B2 (en) | 2005-09-27 | 2010-10-12 | Canon Anelva Corporation | Magnetoresistance effect device |
US8319263B2 (en) | 2004-03-12 | 2012-11-27 | Japan Science And Technology Agency | Magnetic tunnel junction device |
US8394649B2 (en) | 2004-09-07 | 2013-03-12 | Canaon Anelva Corporation | Method of production of a magnetoresistance effect device |
JP2015082633A (ja) * | 2013-10-24 | 2015-04-27 | 日本電産サンキョー株式会社 | 磁気抵抗素子、磁気センサ装置および磁気抵抗素子の製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5432734A (en) * | 1993-08-30 | 1995-07-11 | Mitsubishi Denki Kabushiki Kaisha | Magnetoresistive element and devices utilizing the same |
EP0674327A1 (fr) * | 1994-03-24 | 1995-09-27 | Nec Corporation | Film à soupape de spin |
US5549978A (en) * | 1992-10-30 | 1996-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
JPH0992906A (ja) * | 1995-09-22 | 1997-04-04 | Sony Corp | 磁気抵抗効果素子及び磁界検出装置 |
US5796560A (en) * | 1995-03-13 | 1998-08-18 | Kabushiki Kaisha Toshiba | Magnetoresistive head |
US5949622A (en) * | 1996-04-30 | 1999-09-07 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
-
2001
- 2001-01-25 WO PCT/JP2001/000475 patent/WO2001056090A1/fr active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5549978A (en) * | 1992-10-30 | 1996-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US5432734A (en) * | 1993-08-30 | 1995-07-11 | Mitsubishi Denki Kabushiki Kaisha | Magnetoresistive element and devices utilizing the same |
EP0674327A1 (fr) * | 1994-03-24 | 1995-09-27 | Nec Corporation | Film à soupape de spin |
US5796560A (en) * | 1995-03-13 | 1998-08-18 | Kabushiki Kaisha Toshiba | Magnetoresistive head |
JPH0992906A (ja) * | 1995-09-22 | 1997-04-04 | Sony Corp | 磁気抵抗効果素子及び磁界検出装置 |
US5949622A (en) * | 1996-04-30 | 1999-09-07 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7418777B2 (en) | 2000-03-29 | 2008-09-02 | Tdk Corporation | Method on manufacturing spin valve film |
JP2003086866A (ja) * | 2001-09-13 | 2003-03-20 | Anelva Corp | スピンバルブ型巨大磁気抵抗薄膜の製造方法 |
US10680167B2 (en) | 2004-03-12 | 2020-06-09 | Japan Science And Technology Agency | Magnetic tunnel junction device |
US9123463B2 (en) | 2004-03-12 | 2015-09-01 | Japan Science And Technology Agency | Magnetic tunnel junction device |
US8319263B2 (en) | 2004-03-12 | 2012-11-27 | Japan Science And Technology Agency | Magnetic tunnel junction device |
US11968909B2 (en) | 2004-03-12 | 2024-04-23 | Godo Kaisha Ip Bridge 1 | Method of manufacturing a magnetoresistive random access memory (MRAM) |
US8405134B2 (en) | 2004-03-12 | 2013-03-26 | Japan Science And Technology Agency | Magnetic tunnel junction device |
US11737372B2 (en) | 2004-03-12 | 2023-08-22 | Godo Kaisha Ip Bridge 1 | Method of manufacturing a magnetoresistive random access memory (MRAM) |
US11233193B2 (en) | 2004-03-12 | 2022-01-25 | Japan Science And Technology Agency | Method of manufacturing a magnetorestive random access memeory (MRAM) |
US10367138B2 (en) | 2004-03-12 | 2019-07-30 | Japan Science And Technology Agency | Magnetic tunnel junction device |
US9608198B2 (en) | 2004-03-12 | 2017-03-28 | Japan Science And Technology Agency | Magnetic tunnel junction device |
US8934290B2 (en) | 2004-09-07 | 2015-01-13 | Canon Anelva Corporation | Magnetoresistance effect device and method of production of the same |
US8394649B2 (en) | 2004-09-07 | 2013-03-12 | Canaon Anelva Corporation | Method of production of a magnetoresistance effect device |
US7813088B2 (en) | 2005-09-27 | 2010-10-12 | Canon Anelva Corporation | Magnetoresistance effect device |
JP2009055049A (ja) * | 2008-10-06 | 2009-03-12 | Canon Anelva Corp | マルチチャンバ成膜装置 |
JP2015082633A (ja) * | 2013-10-24 | 2015-04-27 | 日本電産サンキョー株式会社 | 磁気抵抗素子、磁気センサ装置および磁気抵抗素子の製造方法 |
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