JP4703660B2 - スピンmos電界効果トランジスタ - Google Patents
スピンmos電界効果トランジスタ Download PDFInfo
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- JP4703660B2 JP4703660B2 JP2008005041A JP2008005041A JP4703660B2 JP 4703660 B2 JP4703660 B2 JP 4703660B2 JP 2008005041 A JP2008005041 A JP 2008005041A JP 2008005041 A JP2008005041 A JP 2008005041A JP 4703660 B2 JP4703660 B2 JP 4703660B2
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- 230000005669 field effect Effects 0.000 title claims description 12
- 229910001291 heusler alloy Inorganic materials 0.000 claims description 103
- 230000005294 ferromagnetic effect Effects 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 42
- 239000004065 semiconductor Substances 0.000 claims description 38
- 230000004888 barrier function Effects 0.000 claims description 27
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 229910017061 Fe Co Inorganic materials 0.000 claims description 8
- 239000010955 niobium Substances 0.000 claims description 6
- 229910002551 Fe-Mn Inorganic materials 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- QVYYOKWPCQYKEY-UHFFFAOYSA-N [Fe].[Co] Chemical compound [Fe].[Co] QVYYOKWPCQYKEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910008310 Si—Ge Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 375
- 238000000034 method Methods 0.000 description 26
- 230000000694 effects Effects 0.000 description 22
- 230000005415 magnetization Effects 0.000 description 20
- 230000005290 antiferromagnetic effect Effects 0.000 description 18
- 239000013078 crystal Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 230000005291 magnetic effect Effects 0.000 description 16
- 229910003321 CoFe Inorganic materials 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 12
- 238000000137 annealing Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 229910015372 FeAl Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910020674 Co—B Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
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- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
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- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/193—Magnetic semiconductor compounds
- H01F10/1936—Half-metallic, e.g. epitaxial CrO2 or NiMnSb films
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- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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Description
N. Tezuka, et.al., Appl. Phys. Lett. 89(2006)112514
まず、本発明の第1実施形態のトンネル磁気抵抗効果素子について説明する。図1は、第1実施形態のトンネル磁気抵抗効果素子の構成を示す断面図である。
本発明の第2実施形態のスピンMOSFETについて説明する。図2は、第2実施形態のスピンMOSFETの構成を示す断面図である。
本発明の第3実施形態のスピンMOSFETについて説明する。図3は、第3実施形態のスピンMOSFETの構成を示す断面図である。
次に、本発明の第4実施形態のMRAMについて説明する。このMRAMにおけるメモリセルには、ホイスラー合金を有するMTJ素子を用いている。図4は、第4実施形態のMRAMにおけるメモリセルの構成を示す断面図である。
次に、本発明の第5実施形態のTMRヘッドについて説明する。このTMRヘッドは、MTJ素子を用いて形成されており、ハードディスクドライブ(HDD)に使用される。図8は、第5実施形態のTMRヘッドの構成を示す断面図である。
MTJ素子においてトンネルバリア層となる絶縁体層には、MgOまたはAl2O3を用いることができる。MTJ素子におけるトンネルバリア層の膜厚は、キャリアのスピン緩和が起こらず、かつキャリアがトンネル可能な膜厚が望ましく、スピン拡散長より十分小さい3nm以下が望ましい。
Claims (5)
- 半導体基板上に形成されたMgO層と、
前記MgO層上に形成された体心立方格子構造を有する第1強磁性層と、
前記第1強磁性層上に形成された体心立方格子構造を有する、膜厚が3nm以下であるCr層と、
前記Cr層上に形成され、B2構造またはL21構造を有するホイスラー合金層と、
を含む構造をソース及びドレインに具備することを特徴とするスピンMOS電界効果トランジスタ。 - 半導体基板上に形成されたMgO層と、
前記MgO層上に形成された体心立方格子構造を有する第1強磁性層と、
前記第1強磁性層上に形成された体心立方格子構造を有する、膜厚が3nm以下であるCr層と、
前記Cr層上に形成され、B2構造またはL21構造を有するホイスラー合金層と、
前記ホイスラー合金層上に形成されたバリア層と、
前記バリア層上に形成された第2強磁性層と、
を含む構造を少なくともソースまたはドレインのいずれかに具備することを特徴とするスピンMOS電界効果トランジスタ。 - 前記第2強磁性層は、ホイスラー合金を含むことを特徴とする請求項2に記載のスピンMOS電界効果トランジスタ。
- 前記第1強磁性層は、Fe(鉄)またはFe−Co(鉄コバルト)、Fe−Mn(鉄マンガン)、または前記Fe、Fe−Co、Fe−Mnに、V(バナジウム)、Nb(ニオブ)、Mo(モリブデン)、Ta(タンタル)、Ni(ニッケル)、W(タングステン)の少なくともいずれかを含む合金、またはこれらの積層構造を含むことを特徴とする請求項1乃至3のいずれかに記載のスピンMOS電界効果トランジスタ。
- 前記半導体基板は、Si、Ge、GaAsもしくはSi−Geからなることを特徴とする請求項1乃至4のいずれかに記載のスピンMOS電界効果トランジスタ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008005041A JP4703660B2 (ja) | 2008-01-11 | 2008-01-11 | スピンmos電界効果トランジスタ |
US12/342,383 US8243400B2 (en) | 2008-01-11 | 2008-12-23 | Tunneling magnetoresistive effect element and spin MOS field-effect transistor |
US13/533,198 US8335059B2 (en) | 2008-01-11 | 2012-06-26 | Tunneling magnetoresistive effect element and spin MOS field-effect |
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JP2008005041A JP4703660B2 (ja) | 2008-01-11 | 2008-01-11 | スピンmos電界効果トランジスタ |
Publications (2)
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JP2009170556A JP2009170556A (ja) | 2009-07-30 |
JP4703660B2 true JP4703660B2 (ja) | 2011-06-15 |
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JP2008005041A Expired - Fee Related JP4703660B2 (ja) | 2008-01-11 | 2008-01-11 | スピンmos電界効果トランジスタ |
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Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4580966B2 (ja) * | 2007-08-24 | 2010-11-17 | 株式会社東芝 | ホイスラー合金を有する積層体、この積層体を用いたスピンmos電界効果トランジスタ及びトンネル磁気抵抗効果素子 |
JP4703660B2 (ja) * | 2008-01-11 | 2011-06-15 | 株式会社東芝 | スピンmos電界効果トランジスタ |
JP4762285B2 (ja) * | 2008-09-24 | 2011-08-31 | 株式会社東芝 | スピントランジスタ、集積回路、及び、磁気メモリ |
JP4764466B2 (ja) | 2008-09-25 | 2011-09-07 | 株式会社東芝 | ホイスラー合金を有する積層体、この積層体を用いた磁気抵抗素子、及びスピントランジスタ |
JP4908540B2 (ja) * | 2009-03-25 | 2012-04-04 | 株式会社東芝 | スピンmosfetおよびリコンフィギャラブルロジック回路 |
JP5527669B2 (ja) * | 2009-05-22 | 2014-06-18 | 独立行政法人物質・材料研究機構 | 強磁性トンネル接合体およびそれを用いた磁気抵抗効果素子 |
WO2011033665A1 (ja) * | 2009-09-18 | 2011-03-24 | 株式会社 東芝 | 半導体装置およびその製造方法 |
US8766341B2 (en) * | 2009-10-20 | 2014-07-01 | The Regents Of The University Of California | Epitaxial growth of single crystalline MgO on germanium |
JP5338714B2 (ja) * | 2010-02-24 | 2013-11-13 | Tdk株式会社 | 磁気センサー、磁気検出装置、及び磁気ヘッド |
JP2012039010A (ja) | 2010-08-10 | 2012-02-23 | Tdk Corp | 磁気センサー及び磁気検出装置 |
JP5651826B2 (ja) * | 2010-09-03 | 2015-01-14 | Tdk株式会社 | スピン注入電極構造、スピン伝導素子及びスピン伝導デバイス |
JP5786341B2 (ja) * | 2010-09-06 | 2015-09-30 | ソニー株式会社 | 記憶素子、メモリ装置 |
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